Patent application number | Description | Published |
20120038588 | Optical Position Input System And Method - Optical position input systems and methods determine positions of at least one pointing objects within an active touch area. At least three imager modules form images of at least one pointing objects within the active touch area. A processor computes a position of each of the at least one pointing object based upon the images formed by the at least three imager modules. | 02-16-2012 |
20130313710 | Semiconductor Constructions and Methods of Forming Semiconductor Constructions - Some embodiments include semiconductor constructions. The constructions have an electrically conductive post extending through a semiconductor die. The post has an upper surface above a backside surface of the die, and has a sidewall surface extending between the backside surface and the upper surface. A photosensitive material is over the backside surface and along the sidewall surface. Electrically conductive material is directly against the upper surface of the post. The electrically conductive material is configured as a cap over the post. The cap has an edge that extends laterally outwardly beyond the post and encircles the post. An entirety of the edge is directly over the photosensitive material. Some embodiments include methods of forming semiconductor constructions having photosensitive material adjacent through-wafer interconnects, and having electrically conductive material caps over and directly against upper surfaces of the interconnects and directly against an upper surface of the photosensitive material. | 11-28-2013 |
20140246561 | HIGH DYNAMIC RANGE PIXEL HAVING A PLURALITY OF PHOTODIODES WITH A SINGLE IMPLANT - A high dynamic range image sensor pixel includes a short integration photodiode and a long integration photodiode disposed in semiconductor material. The long integration photodiode has a light exposure area that is substantially larger than a light exposure area of the short integration photodiode. The light exposure area of the short integration photodiode has a first doping concentration from a first doping implantation. The light exposure area of the long integration photodiode includes at least one implanted portion having the first doping concentration from the first doping implantation. The light exposure area of the long integration photodiode further includes at least one non-implanted portion photomasked from the first doping implantation such that a combined doping concentration of the implanted and non-implanted portions of the light exposure area of the long integration photodiode is less than the first doping concentration of the light exposure area of the short integration photodiode. | 09-04-2014 |
20140267033 | Information Technology Device Input Systems And Associated Methods - A method for generating a control signal to control an information technology device includes the following steps: (1) capturing, using an image sensor, a current control image of a light source of a remote controller positioned within a field of view of the image sensor; (2) identifying, within the current control image, a current location of light emitted from the light source; (3) determining movement between (a) the current location of the light emitted from the light source and (b) a previous location of the light emitted from the light source determined from a previously captured image; (4) generating a movement control signal based upon the movement; and (5) sending the movement control signal to the information technology device. The method is executed, for example, by a movement control module of an information technology device input system. | 09-18-2014 |
20140306360 | METHOD OF FORMING DUAL SIZE MICROLENSES FOR IMAGE SENSORS - A method of forming microlenses for an image sensor having at least one large-area pixel and at least one small-area pixel is disclosed. The method includes forming a uniform layer of microlens material on a light incident side of the image sensor over the large-area pixel and over the small-area pixel. The method also includes forming the layer of microlens material into a first block disposed over the large-area pixel and into a second block disposed over the small-area pixel. A void is also formed in the second block to reduce a volume of microlens material included in the second block. The first and second blocks are then reflowed to form a respective first microlens and second microlens. The first microlens has substantially the same effective focal length as the second microlens. | 10-16-2014 |
20150076639 | OPTICAL SHIELD IN A PIXEL CELL PLANARIZATION LAYER FOR BLACK LEVEL CORRECTION - A pixel array includes a plurality of photodiodes disposed in a semiconductor layer and arranged in the pixel array. A color filter layer is disposed proximate to the semiconductor layer. Light is to be directed to at least a first one of the plurality of photodiodes through the color filter layer. An optical shield layer is disposed proximate to the color filter layer. The color filter layer is disposed between the optical shield layer and the semiconductor layer. The optical shield layer shields at least a second one of the plurality of photodiodes from the light. | 03-19-2015 |
20150102993 | PROJECTOR-CAMERA SYSTEM WITH AN INTERACTIVE SCREEN - A projector-camera system includes a projector coupled to back project a first image on a translucent diffusing screen. A camera is coupled to capture a second image from a back side of the translucent diffusing screen. The second image includes the first image back projected on the translucent diffusing screen and a shadow of a pointing device cast on a front side of the translucent diffusing screen. The pointing device is on the front side of the translucent diffusing screen and is in close proximity to the translucent diffusing screen. A processing block is coupled to the projector and the camera to generate a third image including the shadow of the pointing device. The processing block is further coupled to activate a command in a main computer coupled to the processing block in response to a relative position of the shadow of the pointing device in the third image. | 04-16-2015 |
20150130010 | Dual Pixel-Sized Color Image Sensors And Methods For Manufacturing The Same - A dual pixel-size color image sensor, including an imaging surface, for imaging of incident light, and a plurality of color pixels, each color pixel including (a) four large photosites, including two large first-color photosites sensitive to a first color of the incident light, and (b) four small photosites including two small first-color photosites sensitive to the first color of the incident light. The large and small first-color photosites are arranged such that connected regions of the imaging surface, not associated with large and/or small first-color photosites, are not continuous straight lines. A method for manufacturing a color filter array on an imaging surface of a dual pixel-size image sensor includes forming a first-color coating on first portions of the imaging surface to form large and small first-color photosites sensitive to a first color, wherein connected portions of the imaging surface, different from the first portions, are not continuous straight lines. | 05-14-2015 |