Patent application number | Description | Published |
20090156275 | SEMI-AUTOMATICALLY SLIDING MOBILE TERMINAL - A semi-automatically sliding mobile terminal is disclosed. The mobile terminal includes a first main body, a second main body, a hinge unit, and a guide line. The second main body slides on the upper side of the first main body. The hinge unit includes a coupler coupled to the first main body and a spring unit compressing and expanding in a lateral direction. The guide unit includes a curved line having an ascending curved line, a crest, and a descending curved line that are formed in a longitudinal direction. When the second main body moves, the spring unit compresses or expands along the guide line. The spring unit compresses before passing over the crest and expands after passing over the crest. After the crest, the second main body moves semi-automatically due to elastic force of the spring unit. | 06-18-2009 |
20110215392 | Semiconductor Devices and Methods of Manufacturing the Same - Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the first conductive pattern being disposed on the dielectric pattern; and a second conductive pattern including metal silicide doped with a second impurity of a second concentration, the second conductive pattern being disposed on the first conductive pattern. The first concentration may be higher than the second concentration. | 09-08-2011 |
20120074484 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES - A method of manufacturing a semiconductor device including forming a plurality of gate structures spaced apart from each other on a substrate; forming a first insulation layer covering the gate structures, the first insulation layer including a void between the gate structures; removing an upper portion of the first insulation layer to form a first insulation layer pattern on sidewalls of lower portions of the gate structures and on the substrate between the gate structures, the first insulation layer pattern including a first recess thereon; forming a conductive layer on upper portions of the gate structures exposed by the first insulation layer pattern; reacting the conductive layer with the gate structures; and forming a second insulation layer on the upper portions of the gate structures, the second insulation layer including a second recess therebeneath in fluid communication with the first recess. | 03-29-2012 |
20120181693 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A semiconductor device may include an upper interconnection on a substrate and an anti-reflection pattern disposed on the upper interconnection. The anti-reflection pattern may include a compound including a metal, carbon and nitrogen. | 07-19-2012 |
20130260554 | Semiconductor Devices and Methods of Manufacturing the Same - Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the first conductive pattern being disposed on the dielectric pattern; and a second conductive pattern including metal silicide doped with a second impurity of a second concentration, the second conductive pattern being disposed on the first conductive pattern. The first concentration may be higher than the second concentration. | 10-03-2013 |
20150145018 | Semiconductor Devices - Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the first conductive pattern being disposed on the dielectric pattern; and a second conductive pattern including metal silicide doped with a second impurity of a second concentration, the second conductive pattern being disposed on the first conductive pattern. The first concentration may be higher than the second concentration. | 05-28-2015 |
20150348982 | Semiconductor Devices - Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the first conductive pattern being disposed on the dielectric pattern; and a second conductive pattern including metal silicide doped with a second impurity of a second concentration, the second conductive pattern being disposed on the first conductive pattern. The first concentration may be higher than the second concentration. | 12-03-2015 |
20160111165 | METHODS OF OPERATING A NONVOLATILE MEMORY DEVICE - An operating method of a nonvolatile memory device is provided which sequentially performs a plurality of erase loops to erase at least one of a plurality of memory blocks. The operating method comprises performing at least one of the plurality of erase loops; performing a post-program operation on the at least one memory block after the at least one erase loop is executed; and performing remaining erase loops of the plurality of erase loops. The post-program operation is not performed when each of the remaining erase loops is executed. | 04-21-2016 |