Jin-Hyeong
Jin-Hyeong Ahn, Suncheon-Si KR
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20160119410 | METHOD AND DEVICE FOR PERFORMING REMOTE TASK USING GUEST DEVICE - A method whereby a host device accesses a remote server and performs a task is disclosed, the method including receiving a task command regarding the remote server; searching for a guest device capable of communicating with the host device and the remote server; determining a task performing pattern based on a found guest device and details of the task; and, according to the determined task performing pattern, performing the task via the host device and one or more devices selected from among found guest devices. | 04-28-2016 |
Jin-Hyeong Lee, Incheon KR
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20140335587 | RADIOFREQUENCY DEVICE FOR INCREASING INTRACELLULAR BIOACTIVE SUBSTANCE AND PLANT CELL CULTURE METHOD USING THE SAME - There are provided a radiofrequency device for increasing amount of a bioactive substance in a plant cell and a plant cell culture method for increasing amount of useful intracellular secondary metabolites by using the radiofrequency device. The cell culture method of the present invention makes it possible to increase specific secondary metabolites such as daidzein, equol, and the like in a cell and thus can be used for development into various medicines, agricultural pesticides, spices, pigments, food additives, and cosmetics containing bioactive substances. Further, the cell culture method of the present invention improves conventional cell culture methods limitedly used for specific cells or specific metabolites for increasing amount of intracellular bioactive substances and thus can be widely applied to production of cells and secondary metabolites. | 11-13-2014 |
Jin-Hyeong Park, Seoul KR
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20100062559 | Methods of manufacturing image sensors having shielding members - An epitaxial layer may be formed on a substrate having a first region and a second region. A photo diode may be formed on a first portion of the epitaxial layer in the first region of the substrate. At least one transfer transistor may be formed on the epitaxial layer adjacent to the photo diode. A plurality of transistors may be formed on a second portion of the epitaxial layer in the second region. An insulation layer may be formed to cover the photo diode, the at least one transfer transistor and the plurality of transistors. A plurality of connections may be formed through the insulation layer to be electrically connected with the at least one transfer transistor and the plurality of transistors in the second region. A shielding member may be formed to expose the photo diode. The epitaxial layer and/or the substrate may be treated with a hydrogen plasma before forming the shielding member to remove dangling bonds of silicon-oxygen and/or silicon-silicon. | 03-11-2010 |
20110204468 | Image sensor and method of manufacturing the same - Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern. | 08-25-2011 |