Patent application number | Description | Published |
20090010052 | One-transistor type dram - A one-transistor type DRAM including a floating body storage element connected between a bit line and a source line and controlled by a word line comprises a plurality of source lines and word lines arranged in a row direction, a plurality of bit lines arranged in a column direction, a plurality of clamp bit lines and reference bit lines arranged in a column direction, a cell array including the floating body storage element and formed in a region where the source line, the word line and the bit line are crossed, a clamp cell array including the floating body storage element and formed in a region where the source line, the word line and the bit line are crossed, a reference cell array including the floating body storage element and formed in a region where the source line, the word line and the bit line are crossed, and a sense amplifier and a write driving unit connected to the bit line and configured to receive a clamp voltage and a reference voltage. | 01-08-2009 |
20090010054 | SEMICONDUCTOR MEMORY DEVICE WITH FERROELECTRIC DEVICE - A semiconductor memory device includes a one-transistor (1-T) field effect transistor (FET) type memory cell connected between a pair of bit lines, and controlled by a word line, where a different channel resistance is induced to a channel region depending on a polarity state of a ferroelectric layer. The device comprises a plurality of word lines arranged in a row direction, a plurality of bit lines arranged in a column direction, a pair of clamp dummy lines arranged in the column direction, a pair of reference dummy lines arranged in the column direction, a cell array including the memory cell and formed in a region where the word line and the bit line are crossed, a dummy cell array including the memory cell and formed where the word line, the pair of claim dummy lines and the pair of reference dummy lines are crossed, and a sense amplifier and a write driving unit connected to the bit line and configured to receive a clamp voltage and a reference voltage. | 01-08-2009 |
20090010079 | One-transistor type dram - A one-transistor type DRAM includes a floating body storage element connected between a bit line and a source line and controlled by a word line. The DRAM comprises a plurality of source lines and word lines arranged in a row direction, a plurality of bit lines arranged in a column direction, a plurality of reference bit lines arranged in a column direction, a cell array including the floating body storage element and formed in a region where the source line, the word line and the bit line are crossed, a reference cell array including the floating body storage element, formed in a region where the source line, the word line and the bit line are crossed and configured to output a reference current having a plurality of levels, a plurality of reference voltage generating units connected to the reference bit lines and configured to generate a plurality of reference voltages corresponding to the reference current having a plurality of levels, and a sense amplifier and a write driving unit connected to the bit line and configured to receive the plurality of reference voltages. | 01-08-2009 |
20090043973 | Phase change memory device - A phase change memory device comprises a cell array unit including a phase change resistance cell disposed in a region where a word line and a bit line are crossed, a sense amplifier configured to sense and amplify data of the phase change resistance cell, a write driving unit configured to supply a write voltage corresponding to data to be written in the cell array unit in response to an enabling signal, and a write verifying control unit controlled by an activation control signal and configured to compare data read through the sense amplifier with the data to be written so as to output the enabling signal. | 02-12-2009 |
20100020622 | ONE-TRANSISTOR TYPE DRAM - A one-transistor type DRAM including a floating body storage element connected between a bit line and a source line and controlled by a word line comprises a plurality of source lines and word lines arranged in a row direction, a plurality of bit lines arranged in a column direction, a plurality of clamp bit lines and reference bit lines arranged in a column direction, a cell array including the floating body storage element and formed in a region where the source line, the word line and the bit line are crossed, a clamp cell array including the floating body storage element and formed in a region where the source line, the word line and the bit line are crossed, a reference cell array including the floating body storage element and formed in a region where the source line, the word line and the bit line are crossed, and a sense amplifier and a write driving unit connected to the bit line and configured to receive a clamp voltage and a reference voltage. | 01-28-2010 |
20100046308 | ONE-TRANSISTOR TYPE DRAM - A one-transistor type DRAM includes a floating body storage element connected between a bit line and a source line and controlled by a word line. The DRAM comprises a plurality of source lines and word lines arranged in a row direction, a plurality of bit lines arranged in a column direction, a plurality of reference bit lines arranged in a column direction, a cell array including the floating body storage element and formed in a region where the source line, the word line and the bit line are crossed, a reference cell array including the floating body storage element, formed in a region where the source line, the word line and the bit line are crossed and configured to output a reference current having a plurality of levels, a plurality of reference voltage generating units connected to the reference bit lines and configured to generate a plurality of reference voltages corresponding to the reference current having a plurality of levels, and a sense amplifier and a write driving unit connected to the bit line and configured to receive the plurality of reference voltages. | 02-25-2010 |
20110101917 | BATTERY PACK - A battery pack includes a case including external terminals, batteries disposed in the case, and balancing lines connected to each of the batteries and functioning as pathways of a voltage signal transmitted to a controller. At least one of the balancing lines functions as a high current line supplying battery current to the external terminals. Thus, the battery pack may have a simple structure and may be simply assembled using the high current line as a balancing line. | 05-05-2011 |
20110101921 | BATTERY PACK - Battery pack circuits are provided. In one embodiment, the invention relates to a battery pack including a rechargeable battery including a first battery terminal and a second battery terminal coupled to a common terminal, a discharge control switch coupled between the first battery terminal and a first discharging terminal, a charge control switch coupled between the first discharging terminal and a first charging terminal, wherein the battery pack is configured to provide a current to a load coupled between the first discharging terminal and the common terminal, and a processing circuitry configured to charge and discharge the battery by controlling the discharge control switch and the charge control switch. | 05-05-2011 |
20110217587 | BATTERY PACK HAVING IMPROVED HEAT DISSIPATION AND MOUNTING STRUCTURE AND BATTERY PACK ASSEMBLY INCLUDING THE SAME - A battery pack and a battery pack assembly including the battery pack. The battery pack includes a holder case to define a plurality of cell spaces, a plurality of battery cells arranged within the plurality of cell spaces, respectively and at least one mounting aperture perforating the holder case and being surrounded by the plurality of cell spaces. | 09-08-2011 |
20110234171 | BATTERY PACK AND METHOD OF CONTROLLING THE BATTERY PACK - A battery pack and a method of controlling the battery pack. The battery pack includes a battery cell and a capacitor connected in parallel to the battery pack. Accordingly, the battery power and the distance travelled by an electric transport device that requires an instantaneous high power output, such as an E-bike, may be increased. | 09-29-2011 |
20110305936 | Connecting structure of battery stacks - A connecting structure of battery stacks includes an electricity collecting case with a plurality of battery stacks, each battery stack having a plurality of unit battery cells and power terminal portions, at least one bus bar with a plurality of fastening holes along a length direction thereof, the bus bar connecting the battery stacks via respective power terminal portions in the fastening holes, and an insulating layer on a surface of the bus bar. | 12-15-2011 |
20120121937 | BATTERY PACK - A battery pack is constructed with a plurality of bare cells having first and second electrodes, a protection circuit module having at least one through-holes, a first electrode lead electrically connecting the first electrodes and a second electrode lead electrically connecting the second electrodes, and a holder case having supports that support the bare cells. One end of each first and second electrode leads passes through the through-hole of the protection circuit module. The first and second electrode leads electrically connect the bare cells and balance the bare cells by transmitting at least one of voltage and current of the bare cells to the protection circuit module. | 05-17-2012 |
20120249078 | BATTERY SYSTEM AND ENERGY STORAGE SYSTEM INCLUDING THE SAME - A battery system and an energy storage system including a battery module. The battery system includes at least one battery module that may perform charging and discharging, and a battery management unit that controls the charging and the discharging of the battery module. The battery management unit varies a charge limit value for stopping the charging of the battery module and a discharge limit value for stopping the discharging of the battery module. Accordingly, a lifetime of the battery module is extended. | 10-04-2012 |
20120313656 | ELECTRONIC CIRCUIT MODULE AND METHOD OF MAKING THE SAME - An electronic circuit module and a method of manufacturing the electronic circuit module are disclosed. In one embodiment, the electronic circuit module includes i) a substrate on which a circuit is formed, ii) a plurality of electrical devices electrically connected to the circuit and iii) a first molding unit coated on the substrate to cover at least the electrical devices. The module further includes i) a test terminal unit comprising a plurality of test wires and configured to inspect the circuit, wherein each of the test wires comprises a first end electrically connected to the circuit and a second end exposed from the first molding unit, and wherein the second ends of the test wires form an inspection unit and are adjacent to each other on the substrate and ii) a second molding unit coated on the substrate to cover the second ends of the test wires. | 12-13-2012 |
20140035534 | BATTERY PACK - Battery pack circuits are provided. In one embodiment, the invention relates to a battery pack including a rechargeable battery including a first battery terminal and a second battery terminal coupled to a common terminal, a discharge control switch coupled between the first battery terminal and a first discharging terminal, a charge control switch coupled between the first discharging terminal and a first charging terminal, wherein the battery pack is configured to provide a current to a load coupled between the first discharging terminal and the common terminal, and a processing circuitry configured to charge and discharge the battery by controlling the discharge control switch and the charge control switch. | 02-06-2014 |