Patent application number | Description | Published |
20090073415 | Apparatus and method for mounting pellicle - An apparatus and a method for mounting a pellicle includes a pellicle compression plate formed to apply a plurality of particular pressures to a plurality of points or areas of a region of the reticle where a pellicle frame of the pellicle contacts a reticle. | 03-19-2009 |
20090161202 | APPARATUS FOR OPTICAL PARAMETRIC CHIRPED PULSE AMPLIFICATION (OPCPA) USING INVERSE CHIRPING AND IDLER - An OPCPA apparatus of the present invention includes an optical pulse stretcher ( | 06-25-2009 |
20100209831 | Method for correcting a position error of lithography apparatus - A method for correcting a position error of a lithography apparatus comprises inputting position data of exposure pattern, irradiating laser light onto a position reference mask from a position measurement laser system, calculating actual position data of the laser light irradiated onto the position reference mask, and comparing the position data of the exposure pattern with the actual position data of the laser light irradiated onto the position reference mask. With this method, circuit patterns can be accurately formed at predetermined positions on a photomask, and the circuit patterns on the photomask can be accurately formed at predetermined positions on a wafer. | 08-19-2010 |
20100266959 | Pattern forming method - A pattern forming method includes providing a resist, irradiating a first electron beam to a first region of the resist, and irradiating a second electron beam to a second region which is defined along a boundary of the first region of the resist, wherein the first electron beam has a first cross section having a polygonal shape, and the second electron beam has a second cross section having a polygonal shape. | 10-21-2010 |
20110142325 | METHOD OF INSPECTING A MASK - In a method of inspecting a mask, an image of a pattern on the mask may be obtained. A histogram of the image by grey levels may be obtained. The histogram may be compared with information of the pattern to detect a defect of the mask. Thus, reliability of defect detection in the mask may be remarkably improved. | 06-16-2011 |
20110165778 | ELECTRON BEAM DEPICTING PATTERN DESIGN, PHOTOMASK, METHODS OF DEPICTING AND FABRICATING PHOTOMASK, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME - A method of depicting a photomask using e-beams includes preparing a photomask having an e-beam resist, depicting the e-beam resist and forming an e-beam resist pattern on the photomask. Depicting the e-beam resist includes irradiating e-beams to an e-beam depiction region without irradiating the e-beams to an e-beam non-depiction region disposed in the e-beam depiction region. The e-beam depiction region and the e-beam non-depiction region are formed using an e-beam resist pattern having the same polarity. | 07-07-2011 |
20120013880 | OPTICAL DEVICE AND EXPOSURE APPARATUS INCLUDING THE SAME - An optical device for splitting a single beam to a plurality of beams and an exposure apparatus including the optical device are disclosed. The optical device includes a first DOE lens array including a plurality of first diffractive optical element (DOE) lenses that are two-dimensionally arranged on a first plane and a second lens array including a plurality of second DOE lenses arranged on a second plane parallel to the first plane so as to respectively correspond to the plurality of first DOE lenses. The first DOE lens array splits a first parallel beam into a plurality of second beams by condensing the first parallel beam and the second DOE lens array modifies the plurality of second beams into a plurality of third beams. | 01-19-2012 |
20120047474 | Method for Manufacturing Semiconductor Devices - A method of manufacturing semiconductor devices is disclosed. The method includes determining fractured shots that do not overlap each other based on a final pattern; determining overlapping shots that are shots that overlap each other based on the final pattern; generating area difference data by comparing the areas of the overlapping shots and the fractured shots with each other; calculating a radiation influenced pattern based on the area difference data; and correcting the overlapping shots based on the radiation influenced pattern. | 02-23-2012 |
20120058432 | METHODS OF FORMING SEMICONDUCTOR DEVICES USING PHOTOLITHOGRAPHIC SHOT GROUPING - A method of forming a semiconductor device can include determining a shot set including a plurality of shots, based on a final pattern used to form a mask. Shots included in the plurality shots can be classified as being in a first pass shot set or in a second pass shot set, where each can include a plurality of non-directly neighboring shots. A first pass exposure can be performed to radiate a reticle to provide the first pass shot set and a second pass exposure can be performed to radiate the reticle to provide the second pass shot set. | 03-08-2012 |
20120214092 | METHOD OF MANUFACTURING A PHOTOMASK - A method for correcting a position error of a lithography apparatus comprises inputting position data of exposure pattern, irradiating laser light onto a position reference mask from a position measurement laser system, calculating actual position data of the laser light irradiated onto the position reference mask, and comparing the position data of the exposure pattern with the actual position data of the laser light irradiated onto the position reference mask. With this method, circuit patterns can be accurately formed at predetermined positions on a photomask, and the circuit patterns on the photomask can be accurately formed at predetermined positions on a wafer. | 08-23-2012 |
20120270683 | GOLF BALL - Disclosed herein is a golf ball which has not only an air resistance similar to or smaller than that of a dimpled golf ball, but also a significantly reduced area ratio of grooves relative to the total surface area of the golf ball, thereby achieving an enhanced carry distance and high accuracy in the directionality of putting. The golf ball has net-shaped grooves formed on an outer surface of a sphere. | 10-25-2012 |
20120288787 | Beam Exposure Systems and Methods of Forming a Reticle Using the Same - In a method of forming a reticle and electron beam exposure system, first electron beams are irradiated onto a first region of a blank reticle having a light shielding layer and a photosensitive layer, to form first shot patterns. Second electron beams having a cross-sectional area larger than the first electron beams are irradiated onto a second region of the blank reticle. The photosensitive layer is developed to form first and second mask patterns at the first and second regions, respectively. The light shielding layer is etched off using the first and second mask patterns as an etching mask, thereby forming the mother pattern including a first pattern in the first region and a second pattern in the second region. Accordingly, the enlargement of the second electron beams reduces the scan time for the blank reticle, thereby reducing the process time. | 11-15-2012 |