Patent application number | Description | Published |
20080205130 | MRAM FREE LAYER SYNTHETIC ANTIFERROMAGNET STRUCTURE AND METHODS - A magnetic tunnel junction (MTJ) structure for use with toggle MRAM devices and the like includes a tunnel barrier layer and a synthetic antiferromagnet (SAF) structure formed on the tunnel barrier layer, wherein the SAF includes a plurality (e.g., three or more) ferromagnetic layers antiferromagnetically or ferromagnetically coupled by a plurality of respective coupling layers. The bottom ferromagnetic layer adjacent the tunnel barrier layer has a high spin polarization and a high intrinsic anisotropy field (H | 08-28-2008 |
20090046397 | METHODS AND APPARATUS FOR A SYNTHETIC ANTI-FERROMAGNET STRUCTURE WITH IMPROVED THERMAL STABILITY - A synthetic antiferromagnet (SAF) structure includes a bottom ferromagnetic layer, a coupling layer formed over the bottom ferromagnetic layer, and a top ferromagnetic layer formed over the coupling layer. One of the top and bottom ferromagnetic layers comprises an amorphous alloy characterized by (Co | 02-19-2009 |
20090059444 | METHODS AND STRUCTURES FOR AN INTEGRATED TWO-AXIS MAGNETIC FIELD SENSOR - A two-axis, single-chip external magnetic field sensor incorporates tunneling magneto-resistance (TMR) technology. In one embodiment, an integrated device includes at least two sensor elements having pinned layers with orientation situated at a known angle (e.g., 90 degrees) with respect to each other. In the presence of a magnetic field, the information from the multiple sensor elements can be processed (e.g., using a conventional bridge configuration) to determine the orientation of the integrated sensor with respect to the external field. In order to achieve an integrated sensor with multiple pinned layer orientations, a novel processing method utilizes antiferromagnetic pinning layers different materials with different blocking temperatures (e.g., PtMn and IrMn). | 03-05-2009 |
20090121266 | METHODS AND STRUCTURES FOR EXCHANGE-COUPLED MAGNETIC MULTI-LAYER STRUCTURE WITH IMPROVED OPERATING TEMPERATURE BEHAVIOR - Exchange-coupled magnetic multilayer structures for use with toggle MRAM devices and the like include a tunnel barrier layer ( | 05-14-2009 |
20090213503 | MAGNETIC TUNNEL JUNCTION DEVICE - A magnetic tunnel junction (MTJ) ( | 08-27-2009 |
20120015099 | STRUCTURE AND METHOD FOR FABRICATING A MAGNETIC THIN FILM MEMORY HAVING A HIGH FIELD ANISOTROPY - A method for depositing uniform and smooth ferromagnetic thin films with high deposition-induced microstructural anisotropy includes a magnetic material deposited in two or more static oblique deposition steps from opposed directions to form a free layer having a high kink Hk, a high energy barrier to thermal reversal, a low critical current in spin-torque switching embodiments, and improved resistance to diffusion of material from adjacent layers in the device. Nonmagnetic layers deposited by the static oblique deposition technique may be used as seed layers for a ferromagnetic free layer or to generate other types of anisotropy determined by the deposition-induced microstructural anisotropy. Additional magnetic or non-magnetic layers may be deposited by conventional methods adjacent to oblique layer to provide magnetic coupling control, reduction of surface roughness, and barriers to diffusion from additional adjacent layers in the device. | 01-19-2012 |
20120313191 | SPIN-TORQUE MAGNETORESISTIVE MEMORY ELEMENT AND METHOD OF FABRICATING SAME - A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic, layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the second spin polarizer and the free magnetic layer. The magnetoresistance ratio of the second tunnel barrier has a value greater than double the magnetoresistance ratio of the first tunnel barrier. | 12-13-2012 |
20130264666 | TWO-AXIS MAGNETIC FIELD SENSOR HAVING REDUCED COMPENSATION ANGLE FOR ZERO OFFSET - A sensor and fabrication process are provided for forming reference layers with substantially orthogonal magnetization directions having zero offset with a small compensation angle. An exemplary embodiment includes a sensor layer stack of a magnetoresistive thin-film based magnetic field sensor, the sensor layer stack comprising a pinning layer; a pinned layer including a layer of amorphous material over the pinning layer, and a first layer of crystalline material over the layer of amorphous material; a nonmagnetic coupling layer over the pinned layer; a fixed layer over the nonmagnetic coupling layer; a tunnel barrier over the fixed layer; and a sense layer over the nonmagnetic intermediate layer. Another embodiment includes a sensor layer stack where a pinned layer including two crystalline layers separated by a amorphous layer. | 10-10-2013 |
20140159179 | TWO-AXIS MAGNETIC FIELD SENSOR HAVING REDUCED COMPENSATION ANGLE FOR ZERO OFFSET - A sensor and fabrication process are provided for forming reference layers with substantially orthogonal magnetization directions having zero offset with a small compensation angle. An exemplary embodiment includes a sensor layer stack of a magnetoresistive thin-film based magnetic field sensor, the sensor layer stack comprising a pinning layer; a pinned layer including a layer of amorphous material over the pinning layer, and a first layer of crystalline material over the layer of amorphous material; a nonmagnetic coupling layer over the pinned layer; a fixed layer over the nonmagnetic coupling layer; a tunnel barrier over the fixed layer; and a sense layer over the nonmagnetic intermediate layer. Another embodiment includes a sensor layer stack where a pinned layer including two crystalline layers separated by a amorphous layer. | 06-12-2014 |
20140217528 | SPIN-TORQUE MAGNETORESISTIVE MEMORY ELEMENT AND METHOD OF FABRICATING SAME - A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the second spin polarizer and the free magnetic layer. The magnetoresistance ratio of the second tunnel barrier has a value greater than double the magnetoresistance ratio of the first tunnel barrier. | 08-07-2014 |