Patent application number | Description | Published |
20120264401 | SYSTEM AND METHOD FOR AUTHENTICATING MOBILE TERMINAL - Provided is a system employed for authentication of a mobile terminal and a method using the same, wherein the method is such that an authentication code is received from a tag using a first communication type through a second communication type using a substantially same frequency band as that of the first communication type, and the authentication code is transmitted to a server of a mobile service provider to perform the authentication. | 10-18-2012 |
20150075257 | GAS SENSOR PACKAGE - A gas sensor package includes a substrate, a gas sensing element on the substrate, and a cover module including ventilation holes. | 03-19-2015 |
20150075258 | GAS SENSOR PACKAGE - A gas sensor package is configured such that an output change part is provided in the gas sensor package including a gas sensor so that a resistance output mode can be changed to a voltage output mode, thereby enabling the gas sensor to have a regular initial voltage value by compensating a resistance change value to an initial gas sensing material. According to embodiments of the present application, a gas sensor package is configured such that a gas moving separation part is formed between a gas sensing element and a substrate with regard to a structure in which a gas sensing element is mounted to the substrate in a flip chip bonding method so that gas can be smoothly moved and thus gas sensing efficiency can be maximized. | 03-19-2015 |
20150198551 | GAS SENSOR PACKAGE - Provided is a gas sensor package, including: a gas sensing element; and a substrate on which the gas sensing element is disposed, in which a through hole corresponding to the gas sensing element is formed. | 07-16-2015 |
Patent application number | Description | Published |
20150224704 | MASTER MOLD, IMPRINT MOLD, AND METHOD OF MANUFACTURING DISPLAY DEVICE USING IMPRINT MOLD - A master mold for manufacturing an imprint mold includes a base part and a plurality of protrusions extending from the base part. At least one first recess is defined in a side portion of each of the protrusions. Additionally, an imprint mold used or utilized to manufacture a display device includes a base part and a plurality of protrusions extending from the base part. Each of the protrusions includes at least one first convex portion protruding from a side portion of each of the protrusions. | 08-13-2015 |
20150287752 | SENSOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME - A sensor substrate includes a base substrate, and a sensing transistor and a switching transistor, which are on the base substrate. The sensing transistor includes a first gate electrode, an optical response pattern on the first gate electrode, a first source electrode and a first drain electrode on the optical response pattern and spaced apart from each other, a first oxide semiconductor pattern between the first source electrode and the optical response pattern, and a second oxide semiconductor pattern between the first drain electrode and the optical response pattern. The switching transistor includes a second gate electrode, a third oxide semiconductor pattern on the second gate electrode, and a second source electrode and a second drain electrode on the third oxide semiconductor pattern to be spaced apart from each other. | 10-08-2015 |
20160077377 | WIRE GRID POLARIZER, DISPLAY DEVICE INCLUDING THE SAME AND METHOD FOR FABRICATING THE SAME - Provided is a wire grid polarizer. The wire grid polarizer includes a substrate, and a plurality of conductive wire patterns which are in parallel with each other and projected from the substrate. The plurality of conductive wire patterns includes a conductive wire pattern material in which an oxide layer is defined at an outer side surface thereof, and an oxidation resistant layer on the oxide layer at the outer side surface of the conductive wire pattern material. The oxide layer is between the oxidation resistant layer and a remainder of the conductive wire pattern material. | 03-17-2016 |
Patent application number | Description | Published |
20130075720 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR INCLUDING THE SAME, AND THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME - An oxide semiconductor includes a first material including at least one selected from the group consisting of zinc (Zn) and tin (Sn), and a second material, where a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from the electronegativity difference value between the first material and oxygen (O) is less than about 1.3. | 03-28-2013 |
20130114013 | DISPLAY DEVICE - A display device includes a first substrate, a gate line disposed on the first substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and connected to a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode and a passivation layer disposed on the data line, in which the semiconductor layer is formed of an oxide semiconductor including indium, tin, and zinc. The indium is present in an amount of about 5 atomic percent (at %) to about 50 at % , and a ratio of the zinc to the tin is about 1.38 to about 3.88. | 05-09-2013 |
20130181212 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A semiconductor device includes: a substrate, a semiconductor layer including an oxide semiconductor disposed on the substrate, a barrier layer disposed on the semiconductor layer and an insulating layer disposed on the barrier layer. The semiconductor layer includes an oxide semiconductor, and the barrier layer includes a material having a lower standard electrode potential than a semiconductor material of the oxide semiconductor, a lower electron affinity than the semiconductor material of the oxide semiconductor, or a larger band gap than the semiconductor material of the oxide semiconductor. The insulating layer includes at least one of a silicon-based oxide or a silicon-based nitride, and the insulating layer includes a portion which contacts with an upper surface of the barrier layer. | 07-18-2013 |
20130256653 | THIN FILM TRANSISTOR HAVING PLURAL SEMICONDUCTIVE OXIDES, THIN FILM TRANSISTOR ARRAY PANEL AND DISPLAY DEVICE INCLUDING THE SAME, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR - A plural semiconductive oxides TFT (sos-TFT) provides improved electrical functionality in terms of charge-carrier mobility and/or threshold voltage variability. The sos-TFT may be used to form a thin film transistor array panel for display devices. An example sos-TFT includes: an insulated gate electrode; a first semiconductive oxide layer having a composition including a first semiconductive oxide; and a second semiconductive oxide layer having a different composition that also includes a semiconductive oxide. The first and second semiconductive oxide layers have respective channel regions that are capacitively influenced by a control voltage applied to the gate electrode. In one embodiment, the second semiconductive oxide layer includes at least one additional element that is not included in the first semiconductive oxide layer where the additional element is one of gallium (Ga), silicon (Si), niobium (Nb), hafnium (Hf), and germanium (Ge). | 10-03-2013 |
20140084293 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array panel includes a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, a semiconductor layer on the gate insulating layer, a source electrode and a drain electrode on the semiconductor layer and facing each other, a floating metal layer between the source electrode and the drain electrode, and a passivation layer covering the source electrode, the drain electrode, and the floating metal layer. The floating metal layer is electrically floating. | 03-27-2014 |
20140098311 | DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME AND DISPLAY PANEL HAVING THE SAME - A display substrate includes a substrate, a switching element, a pixel electrode, and a light sensing part. The switching element is disposed on the substrate and is electrically connected to a gate line and a data line. The pixel electrode is electrically connected to the switching element. The light sensing part is electrically connected to the switching element and the pixel electrode, and is configured to control a grayscale of a pixel according to a brightness of an external light. The pixel includes the pixel electrode. | 04-10-2014 |
20140103332 | THIN FILM TRANSISTOR DISPLAY PANEL - A thin film transistor display panel a includes a transparent substrate; a gate electrode positioned on the substrate; a gate insulating layer positioned on the gate electrode; a semiconductor layer positioned on the gate insulating layer and including a channel region; a source electrode and a drain electrode positioned on the semiconductor layer and facing each other; and a passivation layer configured to cover the source electrode, the drain electrode, and the semiconductor layer, wherein the semiconductor layer includes a relatively thick first portion between the source electrode and the gate electrode and a relatively thinner second portion between the drain electrode and the gate electrode overlap, the relatively thick first portion being sufficiently thick to substantially reduce a charge trapping phenomenon that may otherwise occur at a gate electrode to gate dielectric interface if the first portion were as thin as the second portion. | 04-17-2014 |
20140167038 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR - The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %. | 06-19-2014 |
20150069382 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A thin film transistor substrate includes a substrate, a data line disposed on the substrate and which extends substantially in a predetermined direction, a light blocking layer disposed on the substrate and including a metal oxide including zinc manganese oxide, zinc cadmium oxide, zinc phosphorus oxide or zinc tin oxide, a gate electrode disposed on the light blocking layer, a signal electrode including a source electrode and a drain electrode spaced apart from the source electrode, where the source electrode is connected to the data line, and a semiconductor pattern disposed between the source electrode and the drain electrode. | 03-12-2015 |
20150140699 | METHODS OF FORMING OXIDE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING DISPLAY DEVICES HAVING OXIDE SEMICONDUCTOR DEVICES - A method of forming an oxide semiconductor device may be provided. In the method, a substrate comprising a first major surface and a second major surface that faces away from the first major surface may be provided. An oxide semiconductor device may be formed over the first major surface to provide an intermediate device, and the semiconductor device may comprise an oxide active layer. The intermediate device may be subjected to ultraviolet (UV) light (e.g., ultraviolet ray irradiation process) for a first period, and subjected to heat (e.g., thermal treatment process) for a second period. The first and second periods may at least partly overlap. | 05-21-2015 |
20150145840 | PIXEL CIRCUIT AND DISPLAY DEVICE HAVING THE SAME - A pixel circuit and a display device having the pixel circuit are disclosed. One inventive aspect includes a switching thin-film TFT and a light sensing TFT. The switching thin-film TFT includes a first source electrode electrically connected to a data line. A first gate electrode of the switching thin-film TFT and a second source electrode of the light sensing TFT are electrically connected to a first gate line. A first drain electrode of the switching thin-film TFT and a second drain electrode of the light sensing TFT are electrically connected to a pixel electrode. | 05-28-2015 |
20150348494 | DISPLAY DEVICE AND METHOD OF DRIVING THE SAME - A display device includes a first pixel coupled to a first scan line and a first data line. The first pixel includes a switching transistor including a control terminal connected to the first scan line and an input terminal connected to the first data line, and is turned on by an on-scan signal, a first transistor including a first control terminal connected to the first scan line, a first input terminal connected to the first data line, and a first output terminal connected to the first control terminal; and a second transistor including a second control terminal connected to the first output terminal, a second input terminal receiving a base voltage, and a second output terminal connected to the second control terminal. The first and second transistors respectively convert light into first and second currents outputted respectively to the first and second output terminals in response to an off-scan signal. | 12-03-2015 |
Patent application number | Description | Published |
20110136207 | Mutated Nucleotide Sequences of Batroxobin, Mutated Alpha Factor Secretion Signal Sequence and Processes for Preparing Batroxobin Using the Same - The present invention relates to a batroxobin-encoding nucleotide sequence and/or a mutated α-factor secretion signal sequence, and a vector and a transformant using the same. The batroxobin-encoding nucleotide sequence of this invention exhibits an excellent expression efficiency in yeast, particular | 06-09-2011 |
20110229913 | Method for Amplification of Signal in Immunochromatographic Assay and Immunochromatographic Kit Using the Method - The present invention relates to a method for amplifying a signal in an immunochro-matographic assay for high-sensitivity detection of an analyte and an immunochromatographic kit using the method, which amplifies a signal by controlling a flow rate by discrimination between the size of a first indicator and the size of a second indicator. According to an aspect of the present invention, a method for amplifying a signal in an im | 09-22-2011 |
20130215307 | CDS CIRCUIT, IMAGE SENSOR INCLUDING THE SAME, AND IMAGE PROCESSING DEVICE INCLUDING THE IMAGE SENSOR - A correlated double sampling (CDS) circuit includes a correction circuit configured to receive an input pixel signal through a first node via a column line, correct the input pixel signal, and output the corrected pixel signal through a second node; and a comparator including first and second input terminals, the first input terminal being connected to the second node and being configured to receive the corrected pixel signal, and the second input terminal configured to receive a ramp signal, the comparator being configured to compare the corrected pixel signal with the ramp signal and output a comparison signal indicating a result of the comparing, wherein the correction circuit includes, a first capacitor connected between the first and second nodes, and one or more metal lines disposed adjacent to the first capacitor, and wherein at least one other capacitor is formed by the first capacitor and the metal line. | 08-22-2013 |
20130270420 | CORRELATED DOUBLE SAMPLING CIRCUIT AND IMAGE SENSOR INCLUDING THE SAME - A correlated double sampling (CDS) circuit included in an image sensor includes a sampling unit and a timing controlled band-limitation (TCBL) unit. The sampling unit is configured to generate an output signal by performing a CDS operation with respect to a reset component of an input signal and an image component of the input signal based on a ramp signal, the input signal being provided from a pixel array included in the image sensor. The TCBL unit is connected to the sampling unit, and is configured to remove noise from the output signal based on a timing control signal. The timing control signal is activated during a first comparison duration, in which a first comparison operation is performed with respect to the ramp signal and the reset component of the input signal, and during a second comparison duration, in which a second comparison operation is performed with respect to the ramp signal and the image component of the input signal. | 10-17-2013 |
Patent application number | Description | Published |
20130248498 | APPARATUS AND METHOD OF TREATING SUBSTRATE - A substrate-treating apparatus includes a process chamber including a space therein, a lower electrode which is in the space of the process chamber and supports the substrate, an upper electrode which faces the lower electrode in the process chamber, a high frequency supply line which includes a feed point which applies a high frequency power to the lower electrode, and a modulator which asymmetrically supplies a dielectric substance to a lower portion of the lower electrode with reference to a center portion of the lower electrode. | 09-26-2013 |
20140063680 | SUBSTRATE FIXING DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a substrate fixing device and a method form manufacturing the substrate fixing device, the substrate fixing device includes a lower electrode, a dielectric layer and a plurality of protrusions. The dielectric layer is disposed on the lower electrode. The protrusions are spaced apart from each other, and are protruded from the dielectric layer. Each of the protrusions includes an insulating layer disposed on the dielectric layer, and an upper layer disposed on the insulating layer and contacting a substrate. | 03-06-2014 |
20160079246 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a semiconductor device, the method including etching a portion of a substrate including a first region and a second region to form a device isolation trench; forming a device isolation layer defining active regions by sequentially stacking a first insulating layer, a second insulating layer, and a third insulating layer on an inner surface of the device isolation trench; forming word lines buried in the substrate of the first region, the word lines extending in a first direction to intersect the active region of the first region, the word lines being spaced apart from each other; forming a first mask layer covering the word lines on the substrate of the first region, the first mask layer exposing the substrate of the second region; forming a channel layer on the substrate of the second region; and forming a gate electrode on the channel layer. | 03-17-2016 |
Patent application number | Description | Published |
20110043466 | TOUCH SCREEN LIQUID CRYSTAL DISPLAY DEVICE - An touch screen liquid crystal display device includes a panel driving circuit including a gate driving block, a data driving block, and a signal control block and a liquid crystal module that stores data in data pixels through a data pixel line, to which the data pixels are connected, in response to a data signal applied from the data driving block, and reads data through a read pixel line to which read pixels are connected. The read pixels are connected to the data pixels through a share line. | 02-24-2011 |
20110043467 | TIMING ADJUSTING METHOD FOR TOUCH SCREEN LIQUID CRYSTAL DISPLAY DEVICE - Provided is a timing adjusting method for a touch screen liquid crystal display device. A liquid crystal module of the touch screen liquid crystal display device has a structure in which a data line connected to data pixels and a read line connected to read pixels are shared by a share line, and a display mode section for displaying data of the data pixels is performed separately from a read mode section for reading data of the read pixels. | 02-24-2011 |
20110096054 | LIQUID CRYSTAL DISPLAY PANEL DRIVING CIRCUIT - Disclosed is a liquid crystal display panel driving circuit for driving a liquid crystal display panel with a resolution of N bits. N-bit digital data including upper X bits and lower Y bits is inputted. The liquid crystal display panel driving circuit includes a resistor string unit according to areas, a DAC converter switching unit according to areas, and an interpolation amplifier. The resistor string unit outputs analog reference voltages at different ratios according to three areas. The DAC converter switching unit receives the N-bit digital data, selects (Y+1) analog voltages from the analog reference voltages based on the upper X bits, outputs the (Y+1) analog voltages, and outputs the (Y+1) analog voltages of different combinations based on the lower Y bits. The interpolation amplifier receives the (Y+1) analog voltages and generates an interpolated output voltage by setting weights for the (Y+1) analog voltages by using multi-factors. | 04-28-2011 |
20110128273 | DISPLAY PANEL DRIVING CIRCUIT AND DRIVING METHOD USING THE SAME - A display panel driving circuit includes: N number of buffers (N is an integer no less than 1) configured to buffer data voltages and enable or disable supply of buffered signals in response to a charge sharing control signal; and N number of output multiplexers each configured to receive outputs of two adjacent buffers among outputs of the N number of buffers and transfer the output of one buffer or the outputs of the two buffers to a corresponding one of data lines in response to the charge sharing control signal. | 06-02-2011 |
20110279131 | CIRCUIT AND METHOD FOR MEASURING CAPACITANCE VALUE OF TOUCH SCREEN - A circuit for measuring a capacitance value of a touch screen includes: a target capacitor unit having a target capacitor charged with a target charging voltage; a target voltage control unit to charge the target capacitor; a reference capacitor unit having a reference capacitor charged with a charging reference voltage; a reference voltage control unit to charge the reference capacitor; a comparator to compare the target charging voltage and the charging reference voltage and output a transition signal at a moment when the target charging voltage becomes higher than the charging reference voltage; and a controller to receive an output signal of the comparator and a clock signal and generate a digital output signal and a control signal, wherein a capacitance value of the target capacitor is measured using a time elapsed from a time when the target capacitor is initialized to a time when the transition signal is outputted. | 11-17-2011 |
20110279298 | DIGITAL-TO-ANALOG CONVERTER CIRCUIT USING CHARGE SUBTRACTION METHOD AND CHARGE TRANSFER INTERPOLATION METHOD - A DAC circuit using a charge subtraction method and a change transfer interpolation method includes resistor cells configured to divide a voltage of data of total K bits (=upper M bits+lower N bits) by resistance dividers; a decoder group configured to receive digital data of the M bits and the N bits divided in the resistor cells, process the digital data by the unit of 2 bits, and output respective corresponding voltages; a capacitor group configured to receive the voltages outputted from the decoder group and realize charge charging by a charge subtraction method and charge transferring by a charge transfer interpolation method; and an operational amplifier having a first input terminal which receives a reference voltage and a second input terminal which receives an interpolation voltage corresponding to an amount of charges transferred from the capacitor group, and configured to generate an output voltage. | 11-17-2011 |
20110279407 | CIRCUIT FOR PROCESSING TOUCH LINE SIGNAL OF TOUCH SCREEN - A circuit for processing a touch line signal of a touch screen includes a plurality of sensing read circuits and a switch unit. The plurality of sensing read circuits include sensing read-out units and integrators, respectively. The sensing read-out units are configured to precharge a first sensor capacitor and a second sensor capacitor formed on a touch screen panel with a ground voltage and a supply voltage, allow charges charged in the first sensor capacitor and the second sensor capacitor to be shared, and read-out a charge sharing result obtained by allowing the charges of the first sensor capacitor and the second sensor capacitor to be shared. The integrators are configured to integrate output voltages of the sensing read-out units. The switch unit is configured to sequentially connect output terminals of the plurality of sensing read circuits to an input terminal of an analog-to-digital converter. | 11-17-2011 |
20120081338 | SOURCE DRIVER INTEGRATED CIRCUIT WITH IMPROVED SLEW RATE - Disclosed is a source driver integrated circuit with an improved slew rate by disposing a switching unit, which operates as a resistance component during display driving, before the feedback line of an output buffer. According to the source driver integrated circuit with an improved slew rate, a switching unit, which operates as a resistance component when a signal is transferred, is disposed in the feedback loop of an output buffer, so that the resistance component is not shown to a panel load, thereby improving the slew rate of an output signal. In addition, the improved slew rate makes it possible to easily implement an image through a display. | 04-05-2012 |
20120133631 | SOURCE DRIVER OUTPUT CIRCUIT OF FLAT PANEL DISPLAY DEVICE - In a source driver output circuit of a flat panel display device, first and second latch units receive image data and store the received image data. A D/A converter converts the image data into a data voltage. An output buffer unit outputs the data voltage to a data line. A switching control unit decides whether or not the data voltages of two image data of the same channel among image data of horizontal lines adjacent to each other, stored in the first and second latch units, belong to the same grayscale voltage range, and outputs a switching control signal based on the decided result. A multiplexer unit selects a pre-charge voltage in response to the switching control signal or continuously maintains a connection state between a corresponding channel of the output buffer unit and the corresponding data line. | 05-31-2012 |
20120280961 | LIQUID CRYSTAL PANEL DRIVING CIRCUIT FOR DISPLAY STABILIZATION - Disclosed is a liquid crystal panel driving circuit of display stabilization, including: a plurality of output buffers buffering data voltage and supplying or cutting off the buffered data voltage to or from each of the plurality of data lines; an output MUX switch receiving outputs from two adjacent output buffers of the plurality of output buffers and transferring one of the two outputs to the plurality of data lines; a garbage switch connecting each of the plurality of data lines to a ground terminal; and a power on sensor or a power off sensor generating a power on or off reset signal in response to a turn on/off of a power supply voltage, wherein the output MUX switch is turned-off and the charge share switch and the garbage switch are turned-on, in response to the power on reset signal or the power off reset signal. | 11-08-2012 |
20130162618 | OUTPUT VOLTAGE STABILIZATION CIRCUIT OF DISPLAY DEVICE DRIVING CIRCUIT - The present invention relates to an output voltage stabilization circuit. Specifically, the present invention relates to an output voltage stabilization circuit of a display device driving circuit, which generates a reference current dependent on a high source voltage using a current source independent of a magnitude of the high source voltage, generates a reference current dependent on a low source voltage using a current source independent of a magnitude of the low source voltage, and then generates a control signal by comparing the magnitudes to each other, whereby the output voltage stabilization circuit may stabilize an output voltage regardless of an order in which the low source voltage and the high source voltage are turned off in a circuit using both the low source voltage and the high source voltage. | 06-27-2013 |
20140368415 | THRESHOLD VOLTAGE SENSING CIRCUIT OF ORGANIC LIGHT-EMITTING DIODE DISPLAY DEVICE - The present invention relates to a technique for outputting threshold voltages by properly changing the threshold voltages such that the threshold voltages can protect low-voltage driving elements within an analog to digital converter when the threshold voltages of an OLED display panel are sensed and outputted to the analog to digital converter. The present invention comprises: a sampling capacitor which samples threshold voltages sensed and inputted from an organic light-emitting diode on a display panel; a charge-sharing capacitor which charges and shares the threshold voltages sampled from the sampling capacitor, or solely charges the threshold voltages to bypass the threshold voltages; and a sample-and-hold unit which has a plurality of switches for performing switching operations for the sampling operation of the sampling capacitor and the charging and the sharing of the charge-sharing capacitor, and scales the threshold voltages to threshold voltage areas having a certain value or less. | 12-18-2014 |
20150014712 | SOURCE DRIVER INTEGRATED CIRCUIT AND DISPLAY DEVICE COMPRISING SOURCE DRIVER INTEGRATED CIRCUIT - A source driver integrated circuit comprises a common node; a plurality of pads for inputting power, a portion of which are connected to an external power source and the remainder of which are connected to the portion through the common node; and a common power line which is connected to the plurality of power input pads through the common node. As a result, the resolution of adjacent channels varies very little and block dimming between channels can be resolved. | 01-15-2015 |
20150138056 | GAMMA VOLTAGE SUPPLY CIRCUIT AND METHOD AND POWER MANAGEMENT IC - The present invention provides a gamma voltage supply circuit capable of stably supplying a gamma voltage in response to the change of external voltage and a power management IC including the same. The gamma voltage supply circuit generates a regulating voltage using an internal voltage which is not influenced by the variation in load of a source driver IC, and generates a gamma voltage using the regulating voltage. | 05-21-2015 |
Patent application number | Description | Published |
20090016131 | BIT LINE SENSE AMPLIFIER OF SEMICONDUCTOR MEMORY DEVICE AND CONTROL METHOD THEREOF - A bit line sense amplifier circuit for use in a semiconductor memory device, and a control method thereof, in which the bit line sense amplifier circuit is controlled to maintain a precharge state thereof until a sense amplifier enable signal to enable the sense amplifier circuit is applied, thereby preventing the bit line sense amplifier circuit of the semiconductor memory device from floating, and preventing or substantially reducing a coupling effect, thereby providing a precise data sensing and amplification operation. | 01-15-2009 |
20140131856 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer. | 05-15-2014 |
20150021791 | SEMICONDUCTOR DEVICE - Various aspects of the present disclosure provide a semiconductor device and a method for manufacturing thereof, which can facilitate stacking of semiconductor die while saving manufacturing cost. In an example embodiment, the semiconductor device may comprise a first semiconductor die, a second semiconductor die bonded to a top surface of the first semiconductor die, and a redistribution layer electrically connecting the first semiconductor die to the second semiconductor die, wherein the redistribution layer is formed to extend along surrounding side portions of the second semiconductor die. | 01-22-2015 |
20150200179 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer. | 07-16-2015 |
20150255426 | SEMICONDUCTOR DEVICE WITH REDUCED WARPAGE - A semiconductor device with reduced warpage is disclosed and may, for example, include bonding at least two semiconductor die to a substrate, forming underfill material between the at least two semiconductor die and the substrate and between the at least two semiconductor die, and removing a portion of the underfill material between the at least two semiconductor die, thereby forming a groove. The at least two semiconductor die and the underfill material may, for example, be encapsulating utilizing an encapsulant. The groove may, for example, be filled using the encapsulant. The underfill material between the at least two semiconductor die may, for example, be removed utilizing laser etching. The underfill material between the at least two semiconductor die may, for example, be removed to a depth of 60-70% of a thickness of the at least two semiconductor die. | 09-10-2015 |
20160056079 | Method of Manufacturing a Package-on-Package Type Semiconductor Package - A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof. | 02-25-2016 |
20160064774 | ELECTROLYTE COMPOSITION AND A SODIUM ION BATTERY COMPRISING THE SAME - Disclosed is an electrolyte composition, suitable for sodium ion battery, comprising at least one sodium compound selected from the group consisting of sodium monofluorophosphate (Na | 03-03-2016 |
Patent application number | Description | Published |
20080306649 | Vehicle Driving Safety Control Apparatus - A driving safety control apparatus for a vehicle is provided. In some embodiments, the driving safety control apparatus makes use of a hybrid wheel sensor capable of automatically detecting an abnormal state of one or more chassis components generated when the vehicle is running by using speed and acceleration signals of the hybrid wheel sensor with a semiconductor acceleration sensor mounted on the wheel of the vehicle, thereby informing the driver of the detected abnormal state. In this manner, the detected abnormal part can be repaired at an early stage. Also, the behavior of the vehicle wheels can be monitored, whereby signals representative of the measured behavior can be transmitted to an active suspension for improved control of the active suspension, compared to known systems. | 12-11-2008 |
20120315542 | ELECTRODE COATED WITH METAL DOPED CARBON FILM - Disclosed is an electrode coated with a metal-doped carbon film. | 12-13-2012 |
20130252068 | MANUFACTURING METHOD OF HIGH-PERFORMANCE SILICON BASED ELECTRODE USING POLYMER PATTERN ON CURRENT COLLECTOR AND MANUFACTURING METHOD OF NEGATIVE ELECTRODE OF RECHARGEABLE LITHIUM BATTERY INCLUDING SAME - Disclosed are a silicon nanostructured material with theoretical storage capacity of energy resulting from electrochemical reaction with lithium improved more than 10 times as compared to the existing graphite material and having superior output characteristics, an electrode including the same, and a secondary battery and an electrochemical capacitor including the electrode as a negative electrode. The physical stability of the electrode active material is improved and an electrode with high performance can be obtained. Since more energy can be stored as compared to the graphite material of the same thickness and high-output performance can be achieved through the nanostructure, energy density can be remarkably improved as compared to the existing lithium-ion battery by about 2 times. An asymmetric lithium-ion secondary battery including the electrode active material is applicable to storage of renewable energy, ubiquitous power source, power supply for machinery and vehicles, or the like. | 09-26-2013 |
20150016024 | CATHODE ACTIVE MATERIAL HAVING CORE-SHELL STRUCTURE AND PRODUCING METHOD THEREOF - Disclosed is a cathode active material having a core-shell structure. The core-shell cathode active material includes a core including a lithium transition metal oxide with excellent electrochemical properties and a shell formed by coating the surface of the core with a transition metal oxide. The formation of the shell by coating a transition metal oxide on the surface of the core comprising a lithium transition metal oxide prevents the structure of the lithium transition metal oxide from collapsing and inhibits the dissolution of manganese ions, enabling the fabrication of a hybrid capacitor with improved energy density and rate characteristics. Also disclosed is a method for producing the cathode active material. | 01-15-2015 |