Patent application number | Description | Published |
20100244106 | Fabrication and structure of asymmetric field-effect transistors using L-shaped spacers - Fabrication of an asymmetric field-effect transistor ( | 09-30-2010 |
20100244128 | Configuration and fabrication of semiconductor structure using empty and filled wells - A semiconductor structure, which serves as the core of a semiconductor fabrication platform, has a combination of empty-well regions and filled-well regions variously used by electronic elements, particularly insulated-gate field-effect transistors (“IGFETs”), to achieve desired electronic characteristics. A relatively small amount of semiconductor well dopant is near the top of an empty well. A considerable amount of semiconductor well dopant is near the top of a filled well. Some IGFETs ( | 09-30-2010 |
20100244130 | Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocket - Insulated-gate field-effect transistors (“IGFETs”), both symmetric and asymmetric, suitable for a semiconductor fabrication platform that provides IGFETs for analog and digital applications, including mixed-signal applications, utilize empty-well regions in achieving high performance. A relatively small amount of semiconductor well dopant is near the top of each empty well. Each IGFET ( | 09-30-2010 |
20100244131 | Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions - An asymmetric insulated-gate field-effect transistor ( | 09-30-2010 |
20100244143 | Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length - A semiconductor structure contains a bipolar transistor ( | 09-30-2010 |
20100244147 | Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portions along source/drain zone - An asymmetric insulated-gate field effect transistor ( | 09-30-2010 |
20100244149 | Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses - A group of high-performance like-polarity insulated-gate field-effect transistors ( | 09-30-2010 |
20120181619 | Configuration and Fabrication of Semiconductor Structure Having Bipolar Junction Transistor in Which Non-monocrystalline Semiconductor Spacing Portion Controls Base-link Length - A semiconductor structure contains a bipolar transistor ( | 07-19-2012 |
20120264263 | Structure and Fabrication of Like-polarity Field-effect Transistors Having Different Configurations of Source/Drain Extensions, Halo Pockets, and Gate Dielectric Thicknesses - A group of high-performance like-polarity insulated-gate field-effect transistors ( | 10-18-2012 |
20130015535 | Configuration and Fabrication of Semiconductor Structure Having Asymmetric Field-effect Transistor with Tailored Pocket Portion Along Source/Drain Zone - An asymmetric insulated-gate field effect transistor ( | 01-17-2013 |
20130126970 | CONFIGURATION AND FABRICATION OF SEMICONDUCTOR STRUCTURE USING EMPTY AND FILLED WELLS - A semiconductor structure, which serves as the core of a semiconductor fabrication platform, has a combination of empty-well regions and filled-well regions variously used by electronic elements, particularly insulated-gate field-effect transistors (“IGFETs”), to achieve desired electronic characteristics. A relatively small amount of semiconductor well dopant is near the top of an empty well. A considerable amount of semiconductor well dopant is near the top of a filled well. Some IGFETs ( | 05-23-2013 |