Patent application number | Description | Published |
20100019260 | SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING A WINDOW LAYER AND A LIGHT-DIRECTING STRUCTURE - A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure is disposed between a window layer and a light-directing structure. The light-directing structure is configured to direct light toward the window layer; examples of suitable light-directing structures include a porous semiconductor layer and a photonic crystal. An n-contact is electrically connected to the n-type region and a p-contact is electrically connected to the p-type region. The p-contact is disposed in an opening formed in the semiconductor structure. | 01-28-2010 |
20100029023 | CONTROLLING EDGE EMISSION IN PACKAGE-FREE LED DIE - Light emitting diode (LED) structures are fabricated in wafer scale by mounting singulated LED dies on a carrier wafer or a stretch film, separating the LED dies to create spaces between the LED dies, applying a reflective coating over the LED dies and in the spaces between the LED dies, and separating or breaking the reflective coating in the spaces between the LED dies such that some reflective coating remains on the lateral sides of the LED die. Portions of the reflective coating on the lateral sides of the LED dies may help to control edge emission. | 02-04-2010 |
20100224902 | COMPLIANT BONDING STRUCTURES FOR SEMICONDUCTOR DEVICES - A compliant bonding structure is disposed between a semiconductor light emitting device and a mount. When the semiconductor light emitting device is attached to the mount, for example by providing pressure, heat, and/or ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer. | 09-09-2010 |
20100227421 | METHOD OF BONDING A SEMICONDUCTOR DEVICE USING A COMPLIANT BONDING STRUCTURE - A compliant bonding structure is disposed between a semiconductor device and a mount. In some embodiments, the device is a light emitting device. When the semiconductor light emitting device is attached to the mount, for example by providing ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer. | 09-09-2010 |
20100279437 | CONTROLLING EDGE EMISSION IN PACKAGE-FREE LED DIE - Light emitting diode (LED) structures are fabricated in wafer scale by mounting singulated LED dies on a carrier wafer or a stretch film, separating the LED dies to create spaces between the LED dies, applying a reflective coating over the LED dies and in the spaces between the LED dies, and separating or breaking the reflective coating in the spaces between the LED dies such that some reflective coating remains on the lateral sides of the LED die. Portions of the reflective coating on the lateral sides of the LED dies may help to control edge emission. | 11-04-2010 |
20100308367 | METHOD OF FORMING A DIELECTRIC LAYER ON A SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is formed. A first metal contact is formed on a portion of the n-type region and a second metal contact is formed on a portion of the p-type region. The first and second metal contacts are formed on a same side of the semiconductor structure. A dielectric material is disposed between the first and second metal contacts. The dielectric material is in direct contact with a portion of the semiconductor structure, a portion of the first metal contact, and a portion of the second metal contact. A planar surface is formed including a surface of the first metal contact, a surface of the second metal contact, and a surface of the dielectric material | 12-09-2010 |
20110114987 | COMPLIANT BONDING STRUCTURES FOR SEMICONDUCTOR DEVICES - A light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, a metal p-contact disposed on the p-type region, and a metal n-contact disposed on the n-type region. The metal p-contact and the metal n-contact are both formed on the same side of the semiconductor structure. The light emitting device is connected to a mount by a bonding structure. The bonding structure includes a plurality of metal regions separated by gaps and a metal structure disposed between the light emitting device and the mount proximate to an edge of the light emitting device. The metal structure is configured such that during bonding, the metal structure forms a continuous seal between the light emitting device and the mount. | 05-19-2011 |
20110233580 | CARRIER FOR A LIGHT EMITTING DEVICE - A semiconductor light emitting device is mounted on a support substrate. The support substrate is disposed in an opening in a carrier. In some embodiments, the support substrate is a ceramic tile and the carrier is a low cost material with a lateral extent large enough to support a lens molded over or attached to the carrier. | 09-29-2011 |
20120225505 | METHOD OF BONDING A SEMICONDUCTOR DEVICE USING A COMPLIANT BONDING STRUCTURE - A compliant bonding structure is disposed between a semiconductor device and a mount. In some embodiments, the device is a light emitting device. When the semiconductor light emitting device is attached to the mount, for example by providing ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer. | 09-06-2012 |
20130062651 | CARRIER FOR A LIGHT EMITTING DEVICE - A semiconductor light emitting device is mounted on a support substrate. The support substrate is disposed in an opening in a carrier. In some embodiments, the support substrate is a ceramic tile and the carrier is a low cost material with a lateral extent large enough to support a lens molded over or attached to the carrier. | 03-14-2013 |