Iwashita, Tokyo
Akihiko Iwashita, Tokyo JP
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20100048934 | PROCESS FOR PRODUCING FULLERENE DERIVATIVE - The present invention provides a method for producing a fullerene derivative, comprising the organic group addition step B in which an organic group is further added by reacting at least a basic compound and a halogen compound with a fullerene derivative, which is obtained by addition of a hydrogen atom and an organic group in the organic group addition step A, in which an organic group is added by reacting at least a Grignard reagent and a polar substance with a fullerene or fullerene derivative. | 02-25-2010 |
Akiko Iwashita, Tokyo JP
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20100146343 | ELECTRONIC BULLETIN BOARD MANAGING APPARATUS AND MESSAGE NOTIFYING METHOD - An electronic bulletin board management apparatus and message notification method for permitting a user receiving a notification to quickly know on which bulletin board a message was posted. A communication system includes a message registry for storing data written from a plurality of communication terminals, in memory areas partitioned for the respective communication terminals, and a web server for delivering the stored data in a browsable state in response to a request from a communication terminal. When a piece of data is stored in the message registry by a writing process from one communication terminal, a mail server transmits a notification mail containing notification information to notify that the writing process was done, and a URL to identify a memory area storing the piece of data, in accordance with an instruction from the web server. | 06-10-2010 |
Arata Iwashita, Tokyo JP
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20140143772 | VIRTUAL CLIENT MANAGEMENT SYSTEM AND VIRTUAL CLIENT MANAGEMENT METHOD - A virtual client management system includes a storage unit | 05-22-2014 |
Hiromasa Iwashita, Tokyo JP
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20100000963 | PLASTIC BOTTLE - [Problem] To provide a plastic bottle that can improve grippability and portability, being an item created with the focus on a practical flattened bottle that takes into consideration consumers' needs. [Means of Solution] A plastic bottle ( | 01-07-2010 |
20130186849 | Handle for a Plastic Bottle - A handle may be provided with a neck supporting part that mates with the neck of the bottle, a bottom supporting part that receives the bottom of a bottle and supports the bottom of the bottle, and a gripping part that connects the bottom supporting part and the neck supporting part. The neck supporting part may have a first engagement part and a second engagement part with which the neck may engage and disengage. The gripping part extends in a substantially vertical direction along the body of the bottle when the neck is engaged with the first engagement part and extends in a substantially slanted direction relative to the substantially vertical direction so as to draw apart from the bottle when the neck is engaged with the second engagement part. | 07-25-2013 |
Hiroyuki Iwashita, Tokyo JP
Patent application number | Description | Published |
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20090155698 | PHOTOMASK BLANK AND PRODUCTION METHOD THEREOF, AND PHOTOMASK PRODUCTION METHOD, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD - There are provided a photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern, a photomask blank which provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and a photomask blank which is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film. | 06-18-2009 |
20090233182 | PHOTOMASK BLANK AND METHOD OF PRODUCING THE SAME, METHOD OF PRODUCING PHOTOMASK, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE - It is provided a photomask blank that has good flatness when a light-shielding film is patterned and hence can provide a good mask pattern accuracy and a good pattern transfer accuracy, and a method of producing a photomask. | 09-17-2009 |
20090246647 | PHOTOMASK BLANK, PHOTOMASK, AND METHODS OF MANUFACTURING THE SAME - A photomask blank has a light shieldable film formed on a light transmitting substrate. The light shieldable film has a light shielding layer which is formed of molybdenum silicide metal containing molybdenum in a content greater than 20 atomic % and not greater than 40 atomic % and which has a thickness smaller than 40 nm, an antireflection layer formed on the light shielding layer in contact with the light shielding layer and formed of a molybdenum silicide compound containing at least one of oxygen and nitrogen, and a low reflection layer formed under the light shielding layer in contact with the light shielding layer. | 10-01-2009 |
20110177436 | MASK BLANK AND METHOD OF MANUFACTURING A TRANSFER MASK - A mask blank includes a transparent substrate and a light-shielding film formed on the transparent substrate. The light-shielding film is made of a material composed mainly of a metal that is dry-etchable with a chlorine-based gas. A resist film is used to form a transfer pattern in the light-shielding film. An etching mask film is formed on an upper surface of the light-shielding film and is made of a material containing a transition metal, silicon, and at least one of nitrogen and oxygen. A content ratio of the transition metal to a total of the transition metal and the silicon in the etching mask film is less than 9%. | 07-21-2011 |
20110212392 | PHOTOMASK BLANK, PHOTOMASK, AND METHODS OF MANUFACTURING THE SAME - A photomask blank is for use in manufacturing a photomask to be applied with exposure light having a wavelength of 200 nm or less. The photomask blank has a light-transmitting substrate and a light-shielding film formed thereon. The light-shielding film has a light-shielding layer containing a transition metal and silicon and a front-surface antireflection layer formed contiguously on the light-shielding layer and made of a material containing at least one of oxygen and nitrogen. The light-shielding film has a front-surface reflectance of a predetermined value or less for the exposure light and has a property capable of controlling the change width of the front-surface reflectance at the exposure wavelength to be within 2% when the thickness of the front-surface antireflection layer changes in the range of 2 nm. The material of the front-surface antireflection layer having a refractive index n and an extinction coefficient k capable of achieving such property is selected. | 09-01-2011 |
20110305978 | PHOTOMASK BLANK, PHOTOMASK, AND METHOD OF MANUFACTURING PHOTOMASK BLANK - The present invention provides a photomask blank for producing a photomask to which an ArF excimer laser light is applied, wherein: a thin film having a multilayer structure is provided on a light transmissive substrate; and the uppermost layer of the thin film has an amorphous structure made of a material comprising chromium and at least one of nitrogen, oxygen and carbon. | 12-15-2011 |
20120045713 | PHOTOMASK BLANK, METHOD OF MANUFACTURING THE SAME, PHOTOMASK, AND METHOD OF MANUFACTURING THE SAME - A photomask blank for use in the manufacture of a photomask adapted to be applied with exposure light having a wavelength of 200 nm or less has a thin film on a transparent substrate. The thin film is made of a material containing a transition metal, silicon, and carbon and comprising silicon carbide and/or a transition metal carbide. | 02-23-2012 |
20120115075 | MASK BLANK, TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A mask blank for use in the manufacture of a transfer mask adapted to be applied with ArF exposure light is disclosed. The mask blank has a light-shielding film on a transparent substrate. The light-shielding film has an at least two-layer structure comprising a lower layer composed mainly of a material containing a transition metal, silicon, and nitrogen and an upper layer composed mainly of a material containing a transition metal, silicon, and nitrogen. The ratio of the etching rate of the lower layer to that of the upper layer is 1.0 or more and 5.0 or less in etching which is carried out by supplying a fluorine-containing substance to a target portion and irradiating charged particles to the target portion. | 05-10-2012 |
20120129084 | PHOTOMASK BLANK AND PRODUCTION METHOD THEREOF, AND PHOTOMASK PRODUCTION METHOD, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD - A photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern. The photomask blank provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film. The photomask blank includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side. | 05-24-2012 |
20120156596 | MASK BLANK, TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A mask blank for use in the manufacture of a transfer mask adapted to be applied with ArF excimer laser exposure light is disclosed. The mask blank has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has an at least two-layer structure including a lower layer and an upper layer from the transparent substrate side. The lower layer is made of a material composed of a transition metal, silicon, and nitrogen and having a nitrogen content of 21 at % or more and a refractive index n of 1.9 or less. The upper layer is made of a material composed of a transition metal, silicon, and nitrogen and having a refractive index n of 2.1 or less. A surface layer of the upper layer contains oxygen and has a nitrogen content of 14 at % or more. | 06-21-2012 |
20120189946 | MASK BLANK AND TRANSFER MASK - Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank | 07-26-2012 |
20130065166 | PHASE SHIFT MASK BLANK AND PHASE SHIFT MASK - The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a lower layer, an interlayer and an upper layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the lower layer is made of a film containing a metal and has a first etching rate; the upper layer is made of a film containing a metal and has a third etching rate; the interlayer is made of a film containing the same metal as that contained in the lower layer or the upper layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the interlayer is 30% or less of the thickness of the entire light-shielding film. | 03-14-2013 |
20130230795 | PHOTOMASK BLANK, PHOTOMASK, AND METHODS OF MANUFACTURING THE SAME - A photomask blank is for use in manufacturing a photomask to be applied with exposure light having a wavelength of 200 nm or less. The photomask blank has a light-transmitting substrate and a light-shielding film formed thereon. The light-shielding film has a light-shielding layer containing a transition metal and silicon and a front-surface antireflection layer formed contiguously on the light-shielding layer and made of a material containing at least one of oxygen and nitrogen. The light-shielding film has a front-surface reflectance of a predetermined value or less for the exposure light and has a property capable of controlling the change width of the front-surface reflectance at the exposure wavelength to be within 2% when the thickness of the front-surface antireflection layer changes in the range of 2 nm. The material of the front-surface antireflection layer having a refractive index n and an extinction coefficient k capable of achieving such property is selected. | 09-05-2013 |
20140030641 | MASK BLANK, TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A mask blank for use in the manufacture of a transfer mask adapted to be applied with ArF excimer laser exposure light is disclosed. The mask blank has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has an at least two-layer structure including a lower layer and an upper layer from the transparent substrate side. The lower layer is made of a material composed of a transition metal, silicon, and nitrogen and having a nitrogen content of 21 at % or more and a refractive index n of 1.9 or less. The upper layer is made of a material composed of a transition metal, silicon, and nitrogen and having a refractive index n of 2.1 or less. A surface layer of the upper layer contains oxygen and has a nitrogen content of 14 at % or more. | 01-30-2014 |
20140057199 | PHOTOMASK BLANK, PHOTOMASK, AND METHOD FOR MANUFACTURING PHOTOMASK BLANK - A photomask blank for producing a photomask to which an ArF excimer laser light is applied. The blank includes a light transmissive substrate on which a thin film having a multilayer structure is provided. The thin film has a light-shielding film in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order. The light-shielding layer comprises chromium and nitrogen, and the chromium content is more than 50 atomic %. The front-surface antireflection layer and the back-surface antireflection layer each has an amorphous structure made of a material comprising chromium, nitrogen, oxygen and carbon. The chromium content ratio of the front-surface antireflection layer and the back-surface antireflection layer is 40 atomic % or less. A first sum of nitrogen content and oxygen content of the back-surface antireflection layer is less than a second sum of nitrogen content and oxygen content of the front-surface antireflection layer. | 02-27-2014 |
20140087292 | MASK BLANK, TRANSFER MASK AND METHOD OF MANUFACTURING TRANSFER MASK - Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank | 03-27-2014 |
20140127614 | PHOTOMASK BLANK, METHOD OF MANUFACTURING THE SAME, PHOTOMASK, AND METHOD OF MANUFACTURING THE SAME - A photomask blank for use in the manufacture of a photomask adapted to be applied with exposure light having a wavelength of 200 nm or less has a thin film on a transparent substrate. The thin film is made of a material containing a transition metal, silicon, and carbon and comprising silicon carbide and/or a transition metal carbide. | 05-08-2014 |
20150056539 | PHASE SHIFT MASK BLANK AND PHASE SHIFT MASK - The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a lower layer, an interlayer and an upper layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the lower layer is made of a film containing a metal and has a first etching rate; the upper layer is made of a film containing a metal and has a third etching rate; the interlayer is made of a film containing the same metal as that contained in the lower layer or the upper layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the interlayer is 30% or less of the thickness of the entire light-shielding film. | 02-26-2015 |
Kazue Iwashita, Tokyo JP
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20090086268 | PRINT CONFIGURATION PROGRAM AND INFORMATION PROCESSING APPARATUS - A printing setting program is provided that can be executed by an information processing apparatus for setting a printing condition. The printing setting program has: a plurality of setting sections, each of the plurality of setting sections having a setting item for setting a printing process; a displaying section adapted for displaying the setting section; a detecting section adapted for detecting a change of the setting item; and a memorizing section adapted for memorizing setting item information relating to the setting item detected as changed by the detecting section, wherein one of the plurality of setting sections displayed in a front of the plurality of setting sections at a start of the printing setting program is determined according to the setting item information memorized in the memorizing section. | 04-02-2009 |
Kazuhiro Iwashita, Tokyo JP
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20110233872 | SEALING DEVICE - Provided is a sealing device that increases the lubricity of seal surfaces, prevents leakage of sealed fluids, and prevents excessive heat generation and excessive friction at seal surfaces. Said sealing device, which is of the type that seals a fluid trying to leak from the outer periphery of a sealing surface towards the inner periphery thereof, forms at least two dimples in a circumferential direction in each of a plurality of rows arranged in a radial direction on a sealing surface of a stationary-side sealing element or a rotating-side sealing element. Each dimple is tilted by a dimple angle θ between 0° and 90°, exclusive, such that the tip of that dimple in the direction of rotation is tilted toward the inner periphery side. In each of the plurality of rows of dimples, land areas are formed in the circumferential direction between the proximate tips of adjacent dimples. For each of the plurality of rows of dimples, if a circle is drawn through the centers of the dimples in that row, let L1 be the distance along the circle from the point the circle enters a dimple to the point the circle leaves that dimple, and let L2 be the length, along the circle, of the land areas between dimples. The dimples are characterized by being arranged such that the gap ratio L1/L2 is between 0.001 and 0.1, inclusive. | 09-29-2011 |
Masaru Iwashita, Tokyo JP
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20140059315 | COMPUTER SYSTEM, DATA MANAGEMENT METHOD AND DATA MANAGEMENT PROGRAM - A computer system is achieved which enables a high-speed response to a copy process between computers configuring a KVS and ensures data reliability. Disclosed is a computer system in which computers are connected via a network, and a task is executed using a database including storage areas belonging to the computers. The computer system includes a first computer that manages a data set containing pieces of data. The first computer stores replicated data of data contained in data sets managed by other computers. Upon receiving a request for storage (writing and/or overwriting) of new data, the first computer stores the data in memory, replicating the data to generate replicated data, transmits the replicated data to the other computers, determines whether the replicated data has been transmitted to the network, and uses the data to execute the task when determining the replicated data was transmitted to the network. | 02-27-2014 |
Naoyuki Iwashita, Tokyo JP
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20150256457 | COMMUNICATION NODE, COMMUNICATION SYSTEM, CONTROL APPARATUS, PACKET FORWARDING METHOD, AND PROGRAM - The communication device comprises a first table that stores a first entry in which a match condition that includes at least a destination address is associated with an output destination of a packet matching the match condition; a second table that stores a second entry having a predetermined match condition; a destination learning unit that registers a set of a source and a receiving port of a received packet as a match condition and an output destination, respectively, in the first table; and a packet processing unit that forwards a packet to an output destination determined in the first table when an entry having a match condition matching a received packet is found from each of the first and second tables. The packet processing unit broadcasts a received packet according to a third entry when no entry having a match condition matching the received packet is found. | 09-10-2015 |
Satoshi Iwashita, Tokyo JP
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20120251928 | METHOD OF MANUFACTURING A TRANSFER MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - An internal defect or the like of a transfer mask is detected using transmitted light quantity distribution data of an inspection apparatus. Using a die-to-die comparison inspection method, inspection light is irradiated to a first region of a thin film to obtain a first transmitted light quantity distribution, the inspection light is also irradiated to a second region of the thin film to obtain a second transmitted light quantity distribution, a predetermined-range difference distribution is produced by plotting coordinates at which difference light quantity values calculated from a comparison between the first transmitted light quantity distribution and the second transmitted light quantity distribution are each not less than a first threshold value and less than a second threshold value, and a selection is made of a transfer mask in which a region with high density of plotting is not detected in the predetermined-range difference distribution. | 10-04-2012 |
Takatsugu Iwashita, Tokyo JP
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20150137457 | PISTON RING - A piston ring which is provided with a carbon-based coating which has a low friction property and wear resistance, that is, a piston ring which has a carbon-based coating formed over its sliding surface, in which piston ring, the coating is a multilayer coating comprised of two types of layers having different hardnesses laminated in at least two layers, a hardness difference between the two types of layers is 500 to 1700 HV, a high hardness layer has the same or greater thickness than a low hardness layer, and the coating as a whole has a thickness of 5.0 μm or more. The high hardness layer has a thickness of 5 to 90 nm. The surface on which the coating is formed has a base material roughness of 1.0 μmRz or less. | 05-21-2015 |
Tetsuro Iwashita, Tokyo JP
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20110031592 | SILICON EPITAXIAL WAFER AND METHOD FOR PRODUCTION THEREOF - Disclosed is a wafer having a good haze level in spite of the fact that the inclination angle of {110} plane in the wafer is small. Also disclosed is a method for producing a silicon epitaxial wafer, which comprises the steps of: growing an epitaxial layer on a silicon single crystal substrate having a main surface of {110} plane of which an off-angle is less than 1 degree; and polishing the surface of the epitaxial layer until the surface of the epitaxial layer has a haze level of 0.18 ppm or less (as measured by SP2 at a DWO mode). | 02-10-2011 |
20120080775 | METHOD OF POLISHING SILICON WAFER AS WELL AS SILICON WAFER - This invention is to provide a method of polishing a silicon wafer wherein a high flatness can be attained likewise the conventional polishing method and further the occurrence of defects due to the remaining of substances included in the polishing solution on the surface of the wafer can be suppressed as well as a polished silicon wafer. | 04-05-2012 |
Tsutomu Iwashita, Tokyo JP
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20110194077 | Illuminating optical system for projector - An illuminating optical system for a projector including a light source and a plurality of display panels, includes a first integrator that includes a plurality of lens cells that divide a luminous flux emitted by the light source into a plurality of partial luminous fluxes and that condense the respective partial luminous fluxes, a second integrator that includes a plurality of lens cells on which the respective partial luminous fluxes are incident, a polarization converting element that uniformizes polarizing directions of the luminous fluxes having passed through the respective lens cells of the second integrator, and a color separating unit that separates each of the luminous fluxes from the polarization converting element into a plurality of color lights of different wavelengths. A field lens and a condenser lens are arranged between the polarization converting element and the color separating unit. The field lens superimposes, on the plurality of display panels, the luminous fluxes having passed through the respective lens cells of the first integrator. | 08-11-2011 |
Tsuyoshi Iwashita, Tokyo JP
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20140166648 | SIDEWALL UNIT, FABRICATING METHOD THEREOF, AND FLUID STORAGE TANK COMPRISING THE SIDEWALL UNIT - A method of fabricating a sidewall unit includes a step of providing members configuring the sidewall units, a step of forming a first joint structure, a first step of eliminating distortion, a step of forming a second joint structure, and a step of assembling a sidewall unit. The step of eliminating distortion is a step to eliminate distortion due to heat generated when welding members. In the step, a force substantially vertical to a flange surface and a force substantially horizontal to the flange surface are applied to a joint structure before joining the joint structure and a sidewall panel. A fluid storage tank using the sidewall units according to the present invention can securely prevent leakage of fluid even when a large quantity of fluid is stored therein. | 06-19-2014 |
Yoshinori Iwashita, Tokyo JP
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20120289096 | ELECTRICAL CONNECTOR - Upon plug and receptacle connectors of an electrical connector being fitted with each other, positioning recesses of a block of the plug connector engage positioning protrusions of a housing of the receptacle connector to achieve positioning of the two connectors in their width directions. Inclined portions of receptacle contacts of the receptacle connector are commensurate with inclined portions of inserting holes of the housing so that a backup function of the housing for the receptacle contacts is adjusted to obtain a stable connection between the plug and receptacle connectors. First chamfered portions of the receptacle contacts engage recesses of the plug contacts to generate tactile clicks and to achieve the positioning and contacting between the plug and receptacle contacts. The plug contacts are embraced between contact portions and elastic portions of the receptacle contacts to obtain a stable connection between the both contacts. | 11-15-2012 |