Patent application number | Description | Published |
20110136061 | CROSSLINKED POLYIMIDE, COMPOSITION COMPRISING THE SAME AND PROCESS FOR PRODUCING THE SAME - A novel polyimide which retains the characteristics of polyimides, that is, excellent heat resistance, electrical insulation and chemical resistance, of which dielectric constant is lower than those of the known polyimides, as well as a composition containing the same and a process for producing the same, is disclosed. The polyimide of the present invention is a cross-linked polyimide having a dielectric constant of not more than 2.7, which was produced by polycondensing (a) tetramine(s), (a) tetracarboxylic dianhydride(s) and (an) aromatic diamine(s) in the presence of a catalyst. | 06-09-2011 |
20130224653 | CROSSLINKED POLYIMIDE, COMPOSITION COMPRISING THE SAME AND METHOD FOR PRODUCING THE SAME - A novel polyimide which retains the characteristics of polyimides, that is, excellent heat resistance, electrical insulation and chemical resistance, of which dielectric constant is lower than those of the known polyimides, as well as a composition containing the same and a process for producing the same, is disclosed. The polyimide of the present invention is a cross-linked polyimide having a dielectric constant of not more than 2.7, which was produced by polycondensing (a) tetramine(s), (a) tetracarboxylic dianhydride(s) and (an) aromatic diamine(s) in the presence of a catalyst. | 08-29-2013 |
Patent application number | Description | Published |
20130040050 | APPLICATOR FOR GRAIN BOUNDARY DIFFUSION PROCESS - An applicator for grain boundary diffusion process that uniformly applies an RH powder without excess or deficiency onto a predetermined surface of a sintered compact with a given thickness and in a given pattern, the applicator being automated and performed on many sintered compacts during the production of a NdFeB system sintered magnet. The applicator includes a work loader and a print head, located above the work loader. The work loader includes: a laterally movable base; a lift being vertically movable with respect to the base; a frame that is attachable to and detachable from the lift; a tray that is attachable to and detachable from the frame; a supporter provided on the upper surface of the tray; and a vertically movable magnetic clamp. The print head includes: a screen having a passage section; and a movable squeegee and a backward scraper that maintains contact with the upper screen surface. | 02-14-2013 |
20130343946 | METHOD AND SYSTEM FOR MANUFACTURING SINTERED RARE-EARTH MAGNET HAVING MAGNETIC ANISOTROPY - A method for manufacturing a sintered rare-earth magnet having a magnetic anisotropy, in which a very active powder having a small grain size can be safely used in a low-oxidized state. A fine powder as a material of the sintered rare-earth magnet having a magnetic anisotropy is loaded into a mold until its density reaches a predetermined level. Then, in a magnetic orientation section, the fine powder is oriented by a pulsed magnetic field. Subsequently, the fine powder is not compressed but immediately sintered in a sintering furnace. A multi-cavity mold for manufacturing a sintered rare-earth magnet having an industrially important shape, such as a plate magnet or an arched plate magnet, may be used. | 12-26-2013 |
20150364252 | POWDER-FILLING SYSTEM - A powder-filling system capable of filling a container with powder at an approximately uniform filling density has: a hopper having an opening removably and hermetically closably attached to the container, the hopper communicating with the container at the opening for supplying powder to a container; a powder supplier for supplying powder to the hopper; a gas supplier for repeatedly supplying compressed gas in a pulsed form to the hopper, with the hopper hermetically closably attached to the container; and a sieve member provided at the opening and having a smaller openings in a region near a side wall of the hopper than in its central region. The smaller openings in the region near the side wall of the hopper where the powder more easily falls from the hopper into the container impedes the fall of the powder in that region and improves the overall uniformity in the filling density. | 12-17-2015 |
Patent application number | Description | Published |
20140203408 | METHOD OF PRODUCING COMPOSITE WAFER AND COMPOSITE WAFER - There is provided a method that includes forming a sacrificial layer and the semiconductor crystal layer on a semiconductor crystal layer formation wafer in the stated order, bonding together the semiconductor crystal layer formation wafer and a transfer-destination wafer such that a first surface of the semiconductor crystal layer and a second surface of the transfer-destination wafer face each other, and splitting the transfer-destination wafer from the semiconductor crystal layer formation wafer with the semiconductor crystal layer remaining on the transfer-destination wafer side, by etching away the sacrificial layer by immersing the semiconductor crystal layer formation wafer and the transfer-destination wafer wholly or partially in an etchant. Here, the transfer-destination wafer includes an inflexible wafer and an organic material layer, and a surface of the organic material layer is the second surface. | 07-24-2014 |
20150137317 | SEMICONDUCTOR WAFER, METHOD OF PRODUCING A SEMICONDUCTOR WAFER AND METHOD OF PRODUCING A COMPOSITE WAFER - A semiconductor wafer is provided. The semiconductor wafer comprises a sacrificial layer and a semiconductor crystal layer above a semiconductor crystal layer forming wafer, the semiconductor crystal layer forming wafer, the sacrificial layer and the semiconductor crystal layer being arranged in the order of the semiconductor crystal layer forming wafer, the sacrificial layer and the semiconductor crystal layer, wherein the semiconductor wafer comprises a diffusion inhibiting layer that inhibits diffusion of a first atom of one type selected from a plurality of types of atoms constituting the semiconductor crystal layer forming wafer or the sacrificial layer, at any cross-sectional position between (a) the interface of the semiconductor crystal layer forming wafer that faces the sacrificial layer and (b) a middle of the semiconductor crystal layer. | 05-21-2015 |
20150137318 | SEMICONDUCTOR WAFER, METHOD OF PRODUCING A SEMICONDUCTOR WAFER AND METHOD OF PRODUCING A COMPOSITE WAFER - A semiconductor wafer is provided. The semiconductor wafer comprises a sacrificial layer, a first semiconductor crystal layer, and a second semiconductor crystal layer above a semiconductor crystal layer forming wafer, wherein the semiconductor crystal layer forming wafer, the sacrificial layer, the first semiconductor crystal layer and the second semiconductor crystal layer are arranged in the order of the semiconductor crystal layer forming wafer, the sacrificial layer, the first semiconductor crystal layer and the second semiconductor crystal layer, a first atom of one type selected from a plurality of types of atoms constituting the semiconductor crystal layer forming wafer or the sacrificial layer is contained in the first semiconductor crystal layer and the second semiconductor crystal layer as an impurity, and the concentration of the first atom in the second semiconductor crystal layer is lower than the concentration of the first atom in the first semiconductor crystal layer. | 05-21-2015 |
20160042988 | SEMICONDUCTOR PROCESS CARRIER - An adapter is provided which is used when a process for a small-diameter semiconductor substrate (small substrate) is performed by using a semiconductor manufacturing apparatus for large-diameter silicon substrates. The small substrate is attached to an adapter plate that compensates for differences in size, so that the small substrate is prevented from falling even when the small substrate is in a vertical or inverted direction. To process the small substrate with the semiconductor manufacturing apparatus for large-diameter silicon substrates, an opening | 02-11-2016 |