Patent application number | Description | Published |
20110031534 | PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, Si(1-v-w-x)CwAlxNv BASE MATERIAL, AND EPITAXIAL WAFER - There are provided a Si | 02-10-2011 |
20110039071 | METHOD OF MANUFACTURING A Si(1-v-w-x)CwAlxNv SUBSTRATE, METHOD OF MANUFACTURING AN EPITAXIAL WAFER, Si(1-v-w-x)CwAlxNv SUBSTRATE, AND EPITAXIAL WAFER - There are provided a method for manufacturing a Si | 02-17-2011 |
20110042788 | PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, SI(1-v-w-x)CwAlxNv BASE MATERIAL, AND EPITAXIAL WAFER | 02-24-2011 |
20110104438 | AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL COMPONENT - A method of producing an Al | 05-05-2011 |
20110109973 | AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL LENS - A method of producing an Al | 05-12-2011 |
20110110840 | METHOD FOR PRODUCING GROUP III-NITRIDE CRYSTAL AND GROUP III-NITRIDE CRYSTAL - A method for producing a group III-nitride crystal having a large thickness and high quality and a group III-nitride crystal are provided. A method for producing a group III-nitride crystal | 05-12-2011 |
20110114016 | AlGaN BULK CRYSTAL MANUFACTURING METHOD AND AlGaN SUBSTRATE MANUFACTURING METHOD - There is provided an AlGaN bulk crystal manufacturing method for manufacturing a high-quality AlGaN bulk crystal having a large thickness. Also, there is provided an AlGaN substrate manufacturing method for manufacturing a high-quality AlGaN substrate. The AlGaN bulk crystal manufacturing method includes the following steps: First, a support substrate composed of Al | 05-19-2011 |
20110134509 | WAVELENGTH CONVERSION ELEMENT AND METHOD FOR MANUFACTURING WAVELENGTH CONVERSION ELEMENT - A wavelength conversion element having an improved property-maintaining life and a method for manufacturing the wavelength conversion element are provided. A wavelength conversion element | 06-09-2011 |