Patent application number | Description | Published |
20140311724 | PLATE HEAT EXCHANGER - A flow-path forming gasket is interposed between peripheries of each adjacent ones of stacked heat transfer plates; communicating-path forming gaskets are each installed, surrounding the passage holes in each adjacent ones of the heat transfer plates alternately; and thereby a first flow path adapted to pass a high-temperature fluid, a second flow path adapted to pass a low-temperature fluid, and communicating paths adapted to cause the fluids, respectively, to flow in and out of the first and second flow paths are formed alternately on opposite sides of each heat transfer plate. A drain hole is formed in each of the heat transfer plates to discharge fluid leaking from the first flow path, the second flow path, or the communicating path. The drain hole is surrounded by gaskets isolated from the first flow path, the second flow path, or the communicating path. A leakage flow path or a leakage collector is formed by the gaskets. | 10-23-2014 |
20140338870 | PLATE HEAT EXCHANGER - Heat transfer plates are stacked, each being provided with a plurality of passage holes, a flow-path forming gasket is interposed between peripheries of each adjacent ones of the heat transfer plates, thereby alternately forming a first flow path to pass a high-temperature fluid, a second fluid to pass a low-temperature fluid, and communicating paths to cause the fluids to flow in and out of the first flow path and the second flow path on opposite sides of each heat transfer plate, and communicating-path forming gaskets surrounding the passage holes are interposed between adjacent ones of the heat transfer plates, thereby forming a communicating path to cause a fluid to flow in and out of the first flow path and a communicating path to cause a fluid to flow in and out the second flow path. Each communicating-path forming gasket is made up of inner and outer gasket members arranged in two lines, the inner gasket member surrounding the passage holes while the outer gasket member surrounding the inner gasket member. | 11-20-2014 |
20140367075 | PLATE HEAT EXCHANGER - To provide a plate heat exchanger free from degradation of gaskets which form a flow path through which a high-temperature fluid flows. In the plate heat exchanger, a plurality of heat transfer plates | 12-18-2014 |
Patent application number | Description | Published |
20120127338 | IMAGING APPARATUS, IMAGE PROCESSING METHOD AND COMPUTER-READABLE STORAGE MEDIUM - An imaging apparatus includes an image sensor, a shutter, a memory, a temperature acquisition unit, a determination unit, and an acquisition controller. The image sensor includes an effective pixel region and an optical black region. The memory temporarily stores photoelectric-converted image data after the shutter is opened. The temperature acquisition unit acquires an ambient temperature when the temperature is determined to be equal to or more than a threshold value when the image data is stored in the memory. The acquisition controller makes control for shutting the shutter and for acquiring photoelectric-converted image data at that time when the temperature is equal to or more than the threshold value. The writing unit cuts out image data of the effective pixel region from the acquired image data. Difference in optical black level is corrected using the cut-out image data. | 05-24-2012 |
20130242128 | IMAGING APPARATUS EQUIPPED WITH IMAGE GAIN ADJUSTMENT FUNCTION - An imaging apparatus is equipped with an analog block, an imaging condition determination section, and an analog gain control section. Current consumption of the analog block changes in accordance with an analog gain, which is an amplification ratio of outputs of an imaging device. The imaging condition determination section determines imaging conditions, including the analog gain, in accordance with the brightness of an imaging object. Depending on a state of the imaging apparatus, the analog gain control section alters the analog gain determined by the imaging condition determination section so as to reduce the current consumption of the analog block. Thus, in this imaging apparatus, the current consumption of the analog block may be reduced by the performance of control that alters the analog gain in accordance with the state of the imaging apparatus. Thus, the state of the imaging apparatus may be regulated. | 09-19-2013 |
Patent application number | Description | Published |
20080319676 | Absolute Quantitation of Protein Contents Based on Exponentially Modified Protein Abundance Index by Mass Spectrometry - The present inventor has established protein abundance index (PAI, π) to determine the protein contents in a protein mixture solution using nanoLC-MSMS data. Digested peptides were analyzed by nanoLC-MS/MS and the obtained results were applied to a Mascot protein identification algorism based on tandem mass spectra. PAI is defined as the number of observed peptides divided by the number of observable peptides per protein. PAI from different concentrations of serum albumin showed linear relationship to the logarithm of the protein concentration. This was also valid for 47 proteins in a mouse whole cell lysate analyzed by single run of nanoLC-MS/MS. On the other hand, Mascot protein scores as well as the number of identified peptides per protein were less correlated to the protein abundance. For absolute quantitation, PAI was converted to exponentially modified PAI (EMPAI, mπ), which is proportional to protein contents in the protein mixture. For the 47 proteins in the whole lysate, the deviation percentages of the EMPAI-based concentrations to the actual values were within 63% in average. EMPAI was successfully applied to comprehensive protein expression analysis and performed a comparison study between gene and protein expression in an HCT116 human cancer cells. Accordingly, the present invention provides a method and a computer program for quantifying the protein contents based on the protein abundance index. | 12-25-2008 |
20090012714 | Test of amino acid sequence constituting peptide using isotopic ratio - It is an object of the present invention, when determining and identifying an amino acid sequence of a peptide using MS, to obtain additional information from the MS for evaluating validity of an amino acid sequence in a candidate list outputted from an identifying engine. The present invention provides a method of testing an amino acid sequence inferred by searching a peptide-related database based on peptide mass information and/or peptide modification information obtained through mass spectrometry on a peptide, the method comprising the steps: (1) calculating a theoretical value of an isotopic ratio for the peptide from the inferred amino acid sequence and/or the peptide modification information; (2) measuring a measured value of the isotopic ratio for the peptide from the peptide mass information; and (3) comparing the theoretical value and the measured value, and evaluating validity of the inferred amino acid sequence from differences between the theoretical value and the measured value. | 01-08-2009 |
20100012832 | METHOD OF SEPARATING PHOSPHORYLATED PEPTIDE OR PHOSPHORYLATED PROTEIN - According to the present invention, phosphorylated peptides and/or phosphorylated proteins are specifically separated. A sample containing a phosphorylated peptide and/or a phosphorylated protein is supplied to a separation unit filled with a metal oxide in the presence of an aliphatic hydroxycarboxylic acid. Upon separation of a phosphorylated peptide and/or a phosphorylated peptide with the use of a separation unit filled with a metal oxide, adsorption of carboxylic acid to an acidic peptide can be prevented in the presence of aliphatic hydroxycarboxylic acid. In addition, aliphatic hydroxycarboxylic acid does not inhibit adsorption of a phosphorylated peptide and a phosphoric acid group in the phosphorylated peptide to a metal oxide. | 01-21-2010 |
Patent application number | Description | Published |
20090269938 | CHEMICAL VAPOR DEPOSITION APPARATUS - A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized. | 10-29-2009 |
20100229794 | VAPOR PHASE EPITAXY APPARATUS OF GROUP III NITRIDE SEMICONDUCTOR - Provided is a vapor phase epitaxy apparatus for a III nitride semiconductor, including a susceptor for holding a substrate, an opposite face of the susceptor, a heater for heating the substrate, a raw material gas-introducing portion provided at the central portion of the susceptor, and a reactor formed of a gap between the susceptor and the opposite face of the susceptor, in which a distance between the installed substrate and the opposite face of the susceptor is extremely narrow, and a constitution through which a coolant is flown is provided for the opposite face of the susceptor. The vapor phase epitaxy apparatus further includes, on the opposite face of the susceptor, a fine porous portion for ejecting an inert gas toward the inside of the reactor and a constitution for supplying the inert gas to the fine porous portion. The vapor phase epitaxy apparatus for a III nitride semiconductor is capable of efficient, high-quality crystal growth even when a crystal is grown on the surface of each of many large-aperture substrates held by a susceptor having a large diameter or even when a substrate is heated at a temperature of 1000° C. or higher before a crystal is grown. | 09-16-2010 |
20100307418 | VAPOR PHASE EPITAXY APPARATUS OF GROUP III NITRIDE SEMICONDUCTOR - Provided is a vapor phase epitaxy apparatus of a group III nitride semiconductor capable of improving the uniformity of the film thickness distribution, and reaction rate, of a semiconductor. The vapor phase epitaxy apparatus of a group III nitride semiconductor includes: a susceptor for holding a substrate; the opposite face of the susceptor; a heater for heating the substrate; a reactor formed of a gap between the susceptor and the opposite face of the susceptor; a raw material gas-introducing portion for supplying a raw material gas to the reactor; and a reacted gas-discharging portion. In the vapor phase epitaxy apparatus of a group III nitride semiconductor, the raw material gas-introducing portion includes a first mixed gas ejection orifice capable of ejecting a mixed gas obtained by mixing three kinds, i.e., ammonia, an organometallic compound, and a carrier gas at an arbitrary ratio, and a second mixed gas ejection orifice capable of ejecting a mixed gas obtained by mixing two or three kinds selected from ammonia, the organometallic compound, and the carrier gas at an arbitrary ratio. | 12-09-2010 |
20110180001 | VAPOR PHASE EPITAXY APPARATUS OF GROUP III NITRIDE SEMICONDUCTOR | 07-28-2011 |