Patent application number | Description | Published |
20090098077 | Two-Phase Composition for Improving Curl Retention - The present invention is related to a composition for conditioning and improving curl retention of permanently shaped and/or natural curly hair comprising two optically separated phases at zero shear rate which becomes homogeneous upon shaking and returns to optically separated phases. Specifically, present invention is on two phase composition for hair comprising 5 to 50%, by weight calculated to total composition, oil phase and 50 to 95%, by weight calculated to total composition, an oil phase and 50 to 95%, by weight calculated to total composition, an aqueous phase wherein oil phase comprises at least one volatile oil at a concentration of 70 to 100%, by weight, calculated to the content of oil phase, and aqueous phase comprises 0.1 to 20% by weight calculated to the content of aqueous phase at least one fixing polymer, 10 to 40% by weight calculate to the content of aqueous phase at least one water miscible organic solvent and 0.05 to 2% by weight calculated to the content of the aqueous phase at least one cationic surfactant wherein oil and aqueous phases are optically separated at zero shear rate and becomes homogeneous upon shaking and returns again to optically separated two phases. | 04-16-2009 |
20100319719 | COSMETIC COMPOSITION - Present invention is on styling composition comprising at least one film forming polymer, at least one polyol at a concentration of 5% by weight or higher and polyacryloldimethyltaurate and/or its salts. The composition of the present invention improves curl retention, curl separation, shine and manageability of hair. | 12-23-2010 |
20160038398 | Hair Styling Composition - The present invention is related to a hair styling composition and process for styling keratin fibres, especially for hair. The object of the present invention is an aerosol composition for keratin fibres, especially for hair, based on an aqueous, aqueous-alcoholic or alcoholic medium comprising at least one natural starch and at least one propellant. Compositions according to present invention can furthermore comprise at least one film forming polymer, one or more surfactant, UV filter and direct hair dye. | 02-11-2016 |
Patent application number | Description | Published |
20100319719 | COSMETIC COMPOSITION - Present invention is on styling composition comprising at least one film forming polymer, at least one polyol at a concentration of 5% by weight or higher and polyacryloldimethyltaurate and/or its salts. The composition of the present invention improves curl retention, curl separation, shine and manageability of hair. | 12-23-2010 |
20110192413 | Two-Phase Composition for Improving Curl Retention - A two phase composition conditions and improves curl retention of permanently shaped and/or natural curly hair. The composition has 5 to 50%, by weight calculated to total composition, oil phase and 50 to 95%, by weight calculated to total composition, an aqueous phase wherein oil phase has at least one volatile oil at a concentration of 70 to 100%, by weight, calculated to the content of oil phase, and aqueous phase has 0.1 to 20% by weight calculated to the content of aqueous phase at least one fixing polymer, 10 to 40% by weight calculate to the content of aqueous phase at least one water miscible organic solvent and 0.05 to 2% by weight calculated to the content of the aqueous phase at least one cationic surfactant. | 08-11-2011 |
20120103357 | COMPOSITION FOR KERATIN FIBRES - Conditioning and shine enhancing compositions dramatically and condition hair excellently in terms of combability, elasticity, smoothness and softness for keratin fibres especially human hair are disclosed. Particularly, the compositions disclosed comprise synthetic mica coated with metal oxide or oxides and having a volume particle size distribution of 1 to 750 μm at a concentration of 0.01 to 10% by weight, calculated to total composition, which gives hair shimmery shine. | 05-03-2012 |
Patent application number | Description | Published |
20100055012 | NITROGEN OXIDE STORAGE CATALYST FEATURING A REDUCED DESULFURIZATION TEMPERATURE - Nitrogen oxide storage catalysts are used to remove nitrogen oxides from the exhaust gas of internal combustion engines operated predominantly under lean burn conditions. When these catalysts are used in diesel vehicles, the increased sulfur content in the fuel during operation results in poisoning of the catalyst, which is reversible at high temperatures under reduced exhaust gas conditions. In the case of conventional nitrogen oxide storage catalysts, temperatures of more than 600° C. have to be obtained for desulfurization. This is not always possible in diesel vehicles with a nitrogen oxide storage catalyst in the underbody area. | 03-04-2010 |
20100101210 | Method for Regenerating Soot Filters in the Exhaust Gas System of a Lean Mix Engine, and Exhaust Gas System Therefor - To adhere to legal exhaust-gas regulations, the exhaust gases of a lean-burn engine must be freed from soot particles and nitrogen oxides. It is proposed that the cylinders of the lean-burn engine be divided into two groups which discharge their exhaust gases into two associated exhaust lines which each comprise a soot filter and which are merged at an opening-in point into a common exhaust line. The common exhaust line comprises the catalytic converter for the removal of the nitrogen oxides. By regenerating the two soot filters at different times, the exhaust-gas temperature in the common exhaust line is limited to a mean temperature between the exhaust-gas temperature of normal operation and that of regeneration operation, and the catalytic converter for the removal of the nitrogen oxides is preserved. | 04-29-2010 |
20100233051 | NITROGEN OXIDE STORAGE CATALYST FEATURING A REDUCED DESULFURIZATION TEMPERATURE - Nitrogen oxide storage catalysts are used to remove nitrogen oxides from the exhaust gas of internal combustion engines operated predominantly under lean burn conditions. When these catalysts are used in diesel vehicles, the increased sulfur content in the fuel during operation results in poisoning of the catalyst, which is reversible at high temperatures under reduced exhaust gas conditions. In the case of conventional nitrogen oxide storage catalysts, temperatures of more than 600° C. have to be obtained for desulfurization. This is not always possible in diesel vehicles with a nitrogen oxide storage catalyst in the underbody area. | 09-16-2010 |
Patent application number | Description | Published |
20100289100 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state image pickup device including a solid-state image pickup element operable to produce an electric charge according to the amount of light received, a lens disposed on the upper side of a pixel of the solid-state image pickup element, a protective film which covers the upper side of the lens and a surface of which is flattened, and a surface film which is formed at the surface of the protective film and which is higher in hydrophilicity than the inside of the protective film. | 11-18-2010 |
20100320554 | METHOD OF MANUFACTURING SOLID STATE IMAGING DEVICE, AND SOLID STATE IMAGING DEVICE - Disclosed herein is a method of manufacturing a solid state imaging device, including the steps of: forming a light receiving portion in a light receiving area of a semiconductor substrate; forming a pad portion in a pad area of the semiconductor substrate; forming a microlens material layer over the light receiving portion and the pad portion; providing the microlens material layer with a microlens corresponding to the light receiving portion; forming a low-reflection material layer on the microlens material layer; etching the microlens material layer and the low-reflection material layer over the pad portion to form an opening; and imparting hydrophilicity to a surface of the low-reflection material layer and an inside portion of the opening by a normal temperature oxygen radical treatment. | 12-23-2010 |
20130235230 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state image pickup device including a solid-state image pickup element operable to produce an electric charge according to the amount of light received, a lens disposed on the upper side of a pixel of the solid-state image pickup element, a protective film which covers the upper side of the lens and a surface of which is flattened, and a surface film which is formed at the surface of the protective film and which is higher in hydrophilicity than the inside of the protective film. | 09-12-2013 |
20140084406 | METHOD OF MANUFACTURING SOLID STATE IMAGING DEVICE, AND SOLID STATE IMAGING DEVICE - Disclosed herein is a method of manufacturing a solid state imaging device, including the steps of: forming a light receiving portion in a light receiving area of a semiconductor substrate; forming a pad portion in a pad area of the semiconductor substrate; forming a microlens material layer over the light receiving portion and the pad portion; providing the microlens material layer with a microlens corresponding to the light receiving portion; forming a low-reflection material layer on the microlens material layer; etching the microlens material layer and the low-reflection material layer over the pad portion to form an opening; and imparting hydrophilicity to a surface of the low-reflection material layer and an inside portion of the opening by a normal temperature oxygen radical treatment. | 03-27-2014 |
Patent application number | Description | Published |
20130339251 | METHODS FOR CONTROLLING SOFTWARE USAGE - Methods for controlling software usage are described. Methods comprise receiving a request for at least one software application license, wherein the request comprises a user count, generating, by the computing apparatus, one or more sets of license data in response to the request, wherein a set of license data comprises at least one of the user count and a corresponding sequence number, signing each of the one or more sets of license data digitally with a private key, embedding a set of signed license data into the software application, receiving user identification data from a user through an input interface associated with the computing apparatus, and validating the user identification data. Additional embodiments incorporate mechanisms for license renewal, user registration and user authentication by means of associating a range of user identification data with the license data. | 12-19-2013 |
20140019586 | METHODS FOR FORMAT PRESERVING AND DATA MASKING AND DEVICES THEREOF - A method, non-transitory computer readable medium and data masking device comprising receiving an input string comprising one or more input characters from a client computing device. A first numeric value is mapped for each of the one or more input characters of the received input string based on one or more stored datasets. Each of the mapped first numeric values are masked using the one or more stored datasets for each of the one or more input characters of the received input string to a second numeric value. A masked character for each of the second numeric values is remapped based on the one or more stored datasets. The determined masked characters are provided to the requesting client computing device. | 01-16-2014 |
20160085971 | SYSTEM AND METHOD FOR TOKENIZATION OF DATA FOR PRIVACY - The present invention describes a system and method for tokenization of data. The system includes a receiver configured to receive a request for tokenization. The request for tokenization comprises an input data to be tokenized. The system also includes a parser configured to determine one or more datatype from the input data. The system further includes a trained artificial neural network to generate a token for the input data based on a tokenization technique corresponding to the datatype of the input data. | 03-24-2016 |
Patent application number | Description | Published |
20090030495 | SYSTEM FOR CONTROLLED PROSTHESIS DEPLOYMENT - A system for controlled deployment of a prosthesis, in which a sheath is retracted from a prosthesis in a body vessel or duct. The system includes a handle for deploying the prosthesis, the handle comprises a base member fixed to a catheter, and a slide member for sliding past the base member, the slide member being attached to an end of a retraction member. The base member includes an opening having the general shape of a rectangular wave for interacting with the slide member, whereby, repeated manipulation of the slide member causes the sheath to be retracted. | 01-29-2009 |
20090105798 | HANDLE FOR STEPWISE DEPLOYMENT - A system for controlled deployment of a prosthesis, in which a sheath is retracted from a prosthesis in a body vessel or duct. The system includes a handle for deploying the prosthesis, the handle comprises a base member fixed to a catheter, and a slide member for sliding past the base member, the slide member being fixed to an end of a retraction member. The slide member includes a serrated gear rod, and the handle is configured such that, when activated, the gear rod moves in relation to the base member by no more nor less than the length of one serration on the gear rod. | 04-23-2009 |
Patent application number | Description | Published |
20120153402 | EMBEDDED SIGMA-SHAPED SEMICONDUCTOR ALLOYS FORMED IN TRANSISTORS BY APPLYING A UNIFORM OXIDE LAYER PRIOR TO CAVITY ETCHING - When forming sophisticated transistors requiring an embedded semiconductor alloy, the cavities may be formed with superior uniformity on the basis of, for instance, crystallographically anisotropic etch steps by providing a uniform oxide layer in order to reduce process related fluctuations or queue time variations. The uniform oxide layer may be formed on the basis of an APC control regime. | 06-21-2012 |
20120161249 | Reduction of Defect Rates in PFET Transistors Comprising a Silicon/Germanium Semiconductor Material by Providing a Graded Germanium Concentration - When forming sophisticated gate electrode structures in an early manufacturing stage, the threshold voltage characteristics may be adjusted on the basis of a semiconductor alloy, which may be formed on the basis of low pressure CVD techniques. In order to obtain a desired high band gap offset, for instance with respect to a silicon/germanium alloy, a moderately high germanium concentration may be provided within the semiconductor alloy, wherein, however, at the interface formed with the semiconductor base material, a low germanium concentration may significantly reduce the probability of creating dislocation defects. | 06-28-2012 |
20130029463 | Methods of Forming a PMOS Device with In Situ Doped Epitaxial Source/Drain Regions - Disclosed herein is a method of forming a semiconductor device. In one example, the method includes forming extension implant regions in a PMOS region and a NMOS region of a semiconducting substrate for a PMOS device and a NMOS device, respectively and, after forming the extension implant regions, performing a first heating process. The method further includes forming a plurality of cavities in the PMOS region of the substrate, performing at least one epitaxial deposition process to form a plurality of in-situ doped semiconductor layers that are positioned in or above each of said cavities, and forming a masking layer that exposes the NMOS region and covers the PMOS region. The method concludes with the steps of forming source/drain implant regions in the NMOS region of the substrate for the NMOS device and performing a second heating process. | 01-31-2013 |
20130032877 | N-CHANNEL TRANSISTOR COMPRISING A HIGH-K METAL GATE ELECTRODE STRUCTURE AND A REDUCED SERIES RESISTANCE BY EPITAXIALLY FORMED SEMICONDUCTOR MATERIAL IN THE DRAIN AND SOURCE AREAS - When forming sophisticated semiconductor devices including high-k metal gate electrode structures and N-channel transistors, superior performance may be achieved by incorporating epitaxially grown semiconductor materials, for instance a strain-inducing silicon/carbon alloy in combination with an N-doped silicon material, which may provide an acceptable sheet resistivity. | 02-07-2013 |
20130069123 | CMOS SEMICONDUCTOR DEVICES HAVING STRESSOR REGIONS AND RELATED FABRICATION METHODS - Semiconductor devices and related fabrication methods are provided. An exemplary fabrication method involves forming first doped stressor regions in a first region of semiconductor material, forming second doped stressor regions in a second region of semiconductor material after forming the first doped stressor regions, and after forming the second doped stressor regions, annealing the semiconductor device structure to activate ions of the first and second doped stressor regions concurrently. The amount of time for the annealing is chosen to inhibit diffusion of the ions of the first and second doped stressor regions. | 03-21-2013 |
Patent application number | Description | Published |
20100025779 | SHALLOW PN JUNCTION FORMED BY IN SITU DOPING DURING SELECTIVE GROWTH OF AN EMBEDDED SEMICONDUCTOR ALLOY BY A CYCLIC GROWTH/ETCH DEPOSITION PROCESS - A silicon/carbon alloy may be formed in drain and source regions, wherein another portion may be provided as an in situ doped material with a reduced offset with respect to the gate electrode material. For this purpose, in one illustrative embodiment, a cyclic epitaxial growth process including a plurality of growth/etch cycles may be used at low temperatures in an ultra-high vacuum ambient, thereby obtaining a substantially bottom to top fill behavior. | 02-04-2010 |
20120032278 | SHALLOW PN JUNCTION FORMED BY IN SITU DOPING DURING SELECTIVE GROWTH OF AN EMBEDDED SEMICONDUCTOR ALLOY BY A CYCLIC GROWTH/ETCH DEPOSITION PROCESS - A silicon/carbon alloy may be formed in drain and source regions, wherein another portion may be provided as an in situ doped material with a reduced offset with respect to the gate electrode material. For this purpose, in one illustrative embodiment, a cyclic epitaxial growth process including a plurality of growth/etch cycles may be used at low temperatures in an ultra-high vacuum ambient, thereby obtaining a substantially bottom to top fill behavior. | 02-09-2012 |
20120153350 | SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME - Embodiments of semiconductor devices and methods for fabricating the semiconductor devices are provided. The method includes forming a cavity in a semiconductor region laterally adjacent to a gate electrode structure of a transistor. The gate electrode structure is disposed on a channel region of a first silicon-germanium alloy. A strain-inducing silicon-germanium alloy is formed in the cavity and in contact with the first silicon-germanium alloy. The strain-inducing silicon-germanium alloy includes carbon and has a composition different from the first silicon-germanium alloy. | 06-21-2012 |
20120231591 | METHODS FOR FABRICATING CMOS INTEGRATED CIRCUITS HAVING METAL SILICIDE CONTACTS - Methods are provided for fabricating CMOS integrated circuits. In accordance with one embodiment the methods include forming a gate electrode structure overlying an N-doped portion of a semiconductor substrate and growing an embedded silicon germanium area in the N-doped portion in alignment with the gate electrode structure. A layer of silicon is selectively grown overlying the embedded silicon germanium area and a nickel silicide contact is made to the layer of silicon. | 09-13-2012 |
Patent application number | Description | Published |
20120032030 | HIGH LIFT SYSTEM FOR AN AIRPLANE, AIRPLANE SYSTEM AND PROPELLER AIRPLANE HAVING A HIGH LIFT SYSTEM - A high-lift system of an aeroplane is described, including one or more high-lift flaps, an activation device with an activation function for generating adjustment commands for adjusting the adjustment state of the high-lift flaps, and a drive device coupled with the high-lift flaps, which is configured such that on the basis of activation commands the high-lift flaps are adjusted between a refracted adjustment state and an extended adjustment state. The activation function, on the basis of input values, generates adjustment commands and transmits these to the drive device for adjusting the high-lift flaps. The activation function has a function for the automatic retraction of the high-lift flap in flight, which in a flight condition in which the high-lift flap has assumed an extended adjustment state, whilst taking into account an engine thrust and a minimum flight altitude, generates an activation command, in accordance with which the high-lift flap retracts. | 02-09-2012 |
20130166111 | METHOD FOR CONTROLLING A HIGH-LIFT DEVICE OR A FLIGHT CONTROL SURFACE, SYSTEM AND AIRCRAFT OR SPACECRAFT - The present invention discloses a method for controlling a high-lift device or a flight control surface of an aircraft or spacecraft, especially with a system according to the present invention, comprising the steps of receiving, at at least one first control unit, a command signal from a commander unit via a data network, providing a primary control signal to at least one secondary control unit via the data network, wherein the primary control signal depends on the received command signal, receiving, at the at least one second control unit, a sensor signal of one or more sensors of the high-lift device or flight control surface, and providing a secondary control signal to one or more actuators of the high-lift device or flight control surface, wherein the secondary control signal depends on the received sensor signal. Furthermore, the present invention discloses a system and an aircraft or spacecraft. | 06-27-2013 |
Patent application number | Description | Published |
20100061324 | Flexible Radio Link Control Packet Data Unit Length - A first device ( | 03-11-2010 |
20110085488 | Methods and Apparatuses Relating to Multimedia Broadcast Multicast Services - In a flat Radio Access Network (RAN) architecture, each base station ( | 04-14-2011 |
20110098053 | HANDLING IDENTIFIERS FOR ENHANCED DEDICATED CHANNELS IN CELL FORWARD ACCESS CHANNEL STATES | 04-28-2011 |
20120002610 | Radio Base Station, a Network Control Node and Methods therein for Outer Loop Power Control in Dual-Carrier HSUPA - The invention relates to a radio base station ( | 01-05-2012 |
20120002678 | PRIORITIZATION OF DATA PACKETS - A method of operating a telecommunications node ( | 01-05-2012 |
20130136086 | HANDLING IDENTIFIERS FOR ENHANCED DEDICATED CHANNELS IN CELL FORWARD ACCESS CHANNEL STATES - A device receives information regarding allocation of an enhanced dedicated channel radio network temporary identifier (E-RNTI) to user equipment in a cell forward access channel (Cell_FACH) state, and receives information regarding a state change associated with the user equipment. The device determines that the E-RNTI can be released based on the state change, and provides, to another device, a request to release the E-RNTI in response to the state change and so that the E-RNTI can be used by other user equipment. | 05-30-2013 |
20140247783 | Flexible Radio Link Control Packet Data Unit Length - According to an example method performed in a High Speed Downlink Packet Access (HSDPA) environment, a first device generates a High Speed Downlink Shared Channel (HS-DSCH) data frame that includes a plurality of blocks of packet data units. A first block of the plurality of blocks includes packet data units of a first length, and a second block of the plurality of blocks includes packet data units of a different, second length. The first device transfers the HS-DSCH data frame to a second device. The HS-DSCH data frame further includes, for each block of the plurality of blocks, a first information element that indicates a length of the one or more packet data units in the each block, and a second information element that indicates a quantity of packet data units in the each block. | 09-04-2014 |
20140247833 | PRIORITIZATION OF DATA PACKETS - A method of operating a telecommunications node ( | 09-04-2014 |
20150094074 | HANDLING IDENTIFIERS FOR ENHANCED DEDICATED CHANNELS IN CELL FORWARD ACCESS CHANNEL STATES - A device receives information regarding allocation of an enhanced dedicated channel radio network temporary identifier (E-RNTI) to user equipment in a cell forward access channel (Cell_FACH) state, and receives information regarding a state change associated with the user equipment. The device determines that the E-RNTI can be released based on the state change, and provides, to another device, a request to release the E-RNTI in response to the state change and so that the E-RNTI can be used by other user equipment. | 04-02-2015 |
20150382332 | HANDLING IDENTIFIERS FOR ENHANCED DEDICATED CHANNELS IN CELL FORWARD ACCESS CHANNEL STATES - A device receives information regarding allocation of an enhanced dedicated channel radio network temporary identifier (E-RNTI) to user equipment in a cell forward access channel (Cell_FACH) state, and receives information regarding a state change associated with the user equipment. The device determines that the E-RNTI can be released based on the state change, and provides, to another device, a request to release the E-RNTI in response to the state change and so that the E-RNTI can be used by other user equipment. | 12-31-2015 |