Patent application number | Description | Published |
20110267458 | FLUORESCENCE OBSERVATION DEVICE - A fluorescence observation apparatus according to the present invention includes a light source section that can emit a plurality of excitation light beams for exciting a plurality of fluorescent substances and a reference light, an image pickup section that picks up images of a plurality of fluorescent light beams emitted by emitting the plurality of excitation light beams to the plurality of fluorescent substances and reflected light of the reference light, an image generation section that generates an image signal corresponding to the plurality of fluorescent light beams and the reflected light of the reference light whose images are picked up by the image pickup section, a brightness detection section that detects brightness of a plurality of image signals corresponding to the plurality of fluorescent light beams and brightness of an image signal corresponding to the reflected light of the reference light, sets an upper limit value and a lower limit value of brightness using brightness of the image signal corresponding to the reflected light of the reference light as a reference and detects whether or not the brightness of the plurality of image signals corresponding to the plurality of fluorescent light beams falls within a range between the upper limit value and the lower limit value, and a brightness adjusting section that adjusts brightness of each image signal outside the range out of the plurality of image signals corresponding to the plurality of fluorescent light beams so as to fall within the range based on a detection result by the brightness detection section. | 11-03-2011 |
20110267493 | FLUORESCENCE OBSERVATION APPARATUS - A fluorescence observation apparatus of the present invention includes a light source section that can emit a plurality of excitation light beams for exciting a plurality of fluorescent substances and a reference light, an image pickup section that picks up images of a plurality of fluorescent light beams emitted by emitting the plurality of excitation light beams to the plurality of fluorescent substances and reflected light of the reference light, an image generation section that generates image signals corresponding to the plurality of fluorescent light beams and the reflected light of the reference light whose images have been picked up by the image pickup section, and an image processing section that assigns a plurality of fluorescent light images related to image signals corresponding to the plurality of fluorescent light beams and a reference light image related to an image signal corresponding to the reflected light of the reference light to a plurality of color channels respectively and outputs the resulting image as a synthesized image, wherein the image generation section generates an image signal in which the one fluorescent light image and the synthesized image are arranged side by side on a same screen, and the image processing section calculates, when a color tone operation is performed on any one of the plurality of image signals generated by the image generation section, a color tone adjustment coefficient for achieving color tone balance with image signals other than the image signal subjected to the color tone operation and performs color tone calculation processing on the image signals to be assigned to the plurality of color channels using the calculated color tone adjustment coefficient. | 11-03-2011 |
20130158352 | MEDICAL APPARATUS, METHOD FOR CONTROLLING MARKER DISPLAY IN MEDICAL IMAGE AND MEDICAL PROCESSOR - A processor of an endoscope apparatus that is a medical apparatus generates two images that are a normal-light observation image and a special-light observation image that are obtained by picking up a return light, determines matching of observation fields of view with respect to the two images, generates a marker M that indicates a position on a living tissue for at least one of the two images based on the determination result, causes the generated two images to be displayed within a screen of a monitor, and displays the generated marker M by superimposing the marker M on at least one of the two images. | 06-20-2013 |
20140180011 | SCANNING ENDOSCOPE APPARATUS, IMAGE PROCESSING APPARATUS AND OPERATION METHOD OF IMAGE PROCESSING APPARATUS - A scanning endoscope apparatus includes: a light source section that emits illuminating light; an optical fiber that guides and applies the illuminating light from a distal end, the illuminating light having directionality; a drive element and a scanning drive section that scan the distal end of the optical fiber; a light detecting section that detects light from a subject; a shutter and an intermittent light output control section that controls a light application period and an interruption period for the illuminating light; an extrinsic light component removal section that outputs a result of an average value of a plurality of light detection results obtained in the interruption period being subtracted from each of a plurality of light detection results obtained in the light application period; and an image processing section that forms image information for display, based on the result outputted by the extrinsic light component removal section. | 06-26-2014 |
20140194691 | SCANNING ENDOSCOPE APPARATUS - A scanning endoscope apparatus includes a light source section that emits illumination light, an optical fiber that irradiates the illumination light from a distal end to a subject with directivity, a drive element and a scanning drive section that perform scanning by the distal end of the optical fiber, a first light detection section that detects light from a direction of the distal end of the optical fiber, a second light detection section that detects light from an entire scanning range, and an image processing section that forms image information to be outputted to a display section based on a result of addition of a detection result corresponding to an external factor light component in a first light detection result and a second light detection result. | 07-10-2014 |
20140194693 | ENDOSCOPE APPARATUS AND TREATMENT APPARATUS - An endoscope apparatus includes: a laser light source that generates laser light; an optical fiber that guides laser light inputted to a proximal end and applies the laser light to a subject from a distal end; an actuator swinging a distal end portion of the optical fiber; the conductive wire provided in close contact with the optical fiber, and connected to the actuator; a signal generator that generates a drive signal for driving the actuator, the drive signal being conducted by the conductive wire; a detection circuit that detects a current flowing in the conductive wire when the signal generator generates the drive signal, and detects that the conductive wire is broken, based on the detected current value; and a controller that controls an amount of illuminating light based on a result of determination of whether or not the conductive wire is broken in the detection circuit. | 07-10-2014 |
Patent application number | Description | Published |
20100082699 | INFORMATION PROCESSING APPARATUS AND ITS CONTROL METHOD AND DATA PROCESSING SYSTEM - In order to provide a technology which allows efficient understanding of images of a disease locus and diagnosis supporting information for the images, an information processing apparatus comprises: an input unit which inputs object identification information for identifying an object; an acquiring unit which acquires one or more schemas related to the object and medical image data related to the schema, an identification unit which identifies a disease locus region in medical image data respectively related to each of the one or more schemas, a time-series schema generating unit which generates a time-series schema of the disease locus, a time-series image data generating unit which generates time-series image data of the disease locus, and a display output unit which synchronizes and outputs the time-series schema of the disease locus and the time-series image data of the disease locus. | 04-01-2010 |
20110170753 | INFORMATION PROCESSING APPARATUS AND ITS CONTROL METHOD AND DATA PROCESSING SYSTEM - In order to provide a technology which allows efficient understanding of images of a disease locus and diagnosis supporting information for the images, an information processing apparatus comprises: an input unit which inputs object identification information for identifying an object; an acquiring unit which acquires one or more schemas related to the object and medical image data related to the schema, an identification unit which identifies a disease locus region in medical image data respectively related to each of the one or more schemas, a time-series schema generating unit which generates a time-series schema of the disease locus, a time-series image data generating unit which generates time-series image data of the disease locus, and a display output unit which synchronizes and outputs the time-series schema of the disease locus and the time-series image data of the disease locus. | 07-14-2011 |
20110199390 | MEDICAL DIAGNOSIS SUPPORT APPARATUS, METHOD OF CONTROLLING MEDICAL DIAGNOSIS SUPPORT APPARATUS, AND PROGRAM - A medical diagnosis support apparatus includes an item display unit which displays, on a display, a plurality of items for which a parameter for deriving diagnosis support information can be input, a temporary input unit which inputs a plurality of different values as temporary input values for the plurality of items displayed by the item display unit, a deriving unit which derives, by referring to medical information, a plurality of pieces of diagnosis support information each corresponding to one of combinations of the plurality of different temporary input values, and a presenting unit which presents, on the display, the plurality of pieces of diagnosis support information derived by the deriving unit, together with the display of the plurality of items, in a list format. | 08-18-2011 |
20130070987 | INFORMATION PROCESSING APPARATUS AND ITS CONTROL METHOD AND DATA PROCESSING SYSTEM - In order to provide a technology which allows efficient understanding of images of a disease locus and diagnosis supporting information for the images, an information processing apparatus comprises: an input unit which inputs object identification information for identifying an object; an acquiring unit which acquires one or more schemas related to the object and medical image data related to the schema, an identification unit which identifies a disease locus region in medical image data respectively related to each of the one or more schemas, a time-series schema generating unit which generates a time-series schema of the disease locus, a time-series image data generating unit which generates time-series image data of the disease locus, and a display output unit which synchronizes and outputs the time-series schema of the disease locus and the time-series image data of the disease locus. | 03-21-2013 |
Patent application number | Description | Published |
20090020766 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device less prone to cause a reaction between a metal material for interconnection and an electrode or the like connected to a semiconductor region during the high-temperature operation thereof and less prone to be strained during the high-temperature operation thereof. The power semiconductor device can be an SiC power device or the like in which a first metal layer containing at least one selected from the group consisting of Pt, Ti, Mo, W and Ta is formed on a source electrode formed on the semiconductor region, such as a source region or the like. A second metal layer containing at least one selected from the group consisting of Mo, W and Cu is formed on the first metal layer. A third metal layer containing at least one selected from the group consisting of Pt, Mo and W is formed on the second metal layer. | 01-22-2009 |
20090173997 | MOSFET AND METHOD FOR MANUFACTURING MOSFET - The present invention provides a MOSFET and so forth that offer high breakdown voltage and low on-state loss (high channel mobility and low gate threshold voltage) and that can easily achieve normally OFF. A drift layer | 07-09-2009 |
20090250705 | SILICON CARBIDE SEMICONDUCTOR DEVICE COMPRISING SILICON CARBIDE LAYER AND METHOD OF MANUFACTURING THE SAME - A p base ohmic contact of a silicon carbide semiconductor device consists of a p++ layer formed by high-concentration ion implantation and a metal electrode. Since the high-concentration ion implantation performed at the room temperature significantly degrades the crystal of the p++ layer to cause a process failure, a method for implantation at high temperatures is used. In terms of switching loss and the like of devices, it is desirable that the resistivity of the p base ohmic contact should be lower. In well-known techniques, nothing is mentioned on a detailed relation among the ion implantation temperature, the ohmic contact resistivity and the process failure. Then, in the ion implantation step, the temperature of a silicon carbide wafer is maintained in a range from 175° C. to 300° C., more preferably in a range from 175° C. to 200° C. The resistivity of the p base ohmic contact using a p++ region formed by ion implantation at a temperature in a range from 175° C. to 300° C. becomes lower than that in a case where the p++ region is formed by ion implantation at a temperature over 300° C. Further, this can avoid any process failure. | 10-08-2009 |
20090261348 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - In a semiconductor device using a SiC substrate, a Junction Termination Edge (JTE) layer is hardly affected by fixed charge so that a stable dielectric strength is obtained. A semiconductor device according to a first aspect of the present invention includes a SiC epi-layer having n type conductivity, an impurity region in a surface of the SiC epi-layer and having p type conductivity, and JTE layers adjacent to the impurity region, having p type conductivity, and having a lower impurity concentration than the impurity region. The JTE layers are spaced by a distance from an upper surface of the SiC epi-layer, and SiC regions having n type conductivity are present on the JTE layers. | 10-22-2009 |
20100219417 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device and a method of manufacturing the same, to appropriately determine an impurity concentration distribution of a field relieving region and reduce an ON-resistance. The semiconductor device includes a substrate, a first drift layer, a second drift layer, a first well region, a second well region, a current control region, and a field relieving region. The first well region is disposed continuously from an end portion adjacent to the vicinity of outer peripheral portion of the second drift layer to a portion of the first drift layer below the vicinity of outer peripheral portion. The field relieving region is so disposed in the first drift layer as to be adjacent to the first well region. | 09-02-2010 |
20100314629 | SILICON CARBIDE SEMICONDUCTOR DEVICE - In order to obtain a silicon carbide semiconductor device that ensures both stability of withstand voltage and reliability in high-temperature operations in its termination end-portion provided for electric-field relaxation in the perimeter of a cell portion driven as a semiconductor element, the termination end-portion is provided with an inorganic protection film having high heat resistance that is formed on an exposed surface of a well region as a first region formed on a side of the cell portion, and an organic protection film having a high electrical insulation capability with a little influence by electric charges that is formed on a surface of an electric-field relaxation region formed in contact relation to an outer lateral surface of the well region and apart from the cell portion, and on an exposed surface of the silicon carbide layer. | 12-16-2010 |
20110001209 | SEMICONDUCTOR DEVICE - In a termination structure in which a JTE layer is provided, a level or defect existing at an interface between a semiconductor layer and an insulating film, or a minute amount of adventitious impurities that infiltrate into the semiconductor interface from the insulating film or from an outside through the insulating film becomes a source or a breakdown point of a leakage current, which deteriorates a breakdown voltage. A semiconductor device includes: an n | 01-06-2011 |
20110278599 | SILICON CARBIDE SEMICONDUCTOR DEVICE - A SiC semiconductor device capable of increasing a switching speed without destroying a gate insulating film. In addition, in a SiC-MOSFET including an n-type semiconductor substrate formed of SiC, a p-type semiconductor layer is entirely or partially provided on an upper surface of a p-type well layer that has a largest area of the transverse plane among a plurality of p-type well layers provided in an n-type drift layer and is arranged on an outermost periphery immediately below a gate electrode pad. It is preferable that a concentration of an impurity contained in the p-type semiconductor layer be larger than that of the p-type well layer. | 11-17-2011 |
20120009801 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - In a silicon carbide MOSFET, interface state generated at an interface between a silicon carbide layer and a gate insulating film cannot be reduced sufficiently, and mobility of a carrier is decreased. To solve this problem, a silicon carbide semiconductor device according to this invention includes a substrate introduction step of introducing a substrate, which includes a silicon carbide layer on which a gate insulating film is formed, in a furnace, and a heating step of heating the furnace having the substrate introduced therein while introducing nitrogen monoxide and nitrogen therein, wherein, in the heating step, nitrogen is reacted to nitride an interface between the gate insulating film and the silicon carbide layer. | 01-12-2012 |
20120074508 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device less prone to cause a reaction between a metal material for interconnection and an electrode or the like connected to a semiconductor region during the high-temperature operation thereof and less prone to be strained during the high-temperature operation thereof. The power semiconductor device can be an SiC power device or the like in which a first metal layer containing at least one selected from the group consisting of Pt, Ti, Mo, W and Ta is formed on a source electrode formed on the semiconductor region, such as a source region or the like. A second metal layer containing at least one selected from the group consisting of Mo, W and Cu is formed on the first metal layer. A third metal layer containing at least one selected from the group consisting of Pt, Mo and W is formed on the second metal layer. | 03-29-2012 |
20130020587 | POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes a semiconductor substrate of a first conductivity type, a drift layer of the first conductivity type which is formed on a first main surface of the semiconductor substrate, a second well region of a second conductivity type which is formed to surround a cell region of the drift layer, and a source pad for electrically connecting the second well regions and a source region of the cell region through a first well contact hole provided to penetrate a gate insulating film on the second well region, a second well contact hole provided to penetrate a field insulating film on the second well region and a source contact hole. | 01-24-2013 |
20130126906 | SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR, SILICON CARBIDE BULK SUBSTRATE FOR EPITAXIAL GROWTH AND MANUFACTURING METHOD THEREFOR AND HEAT TREATMENT APPARATUS - A method is provided in order to manufacture a silicon carbide epitaxial wafer whose surface flatness is very good and has a very low density of carrot defects and triangular defects arising after epitaxial growth. The silicon carbide epitaxial wafer is manufactured by a first step of annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from <0001> face, in a reducing gas atmosphere at a first temperature T | 05-23-2013 |
20130153900 | SEMICONDUCTOR DEVICE - A semiconductor device capable of rapidly and accurately sensing the information regarding the temperature of a semiconductor transistor contained therein. A MOSFET includes a plurality of cells, and includes a main cell group including a cell for supplying a current to a load among the plurality of cells, and a sense cell group including a cell for sensing temperature information regarding the temperature of the MOSFET thereamong. The main cell group and the sense cell group have different temperature characteristics showing changes in electrical characteristics to changes in temperature. A temperature sensing circuit senses the temperature of the MOSFET based on, for example, a value of a main current flowing through the main cell group and a value of a sense current flowing through the sense cell group. | 06-20-2013 |
20130285140 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A trench-gate type semiconductor device that can prevent breakdown of a gate insulating film caused by a displacement current flowing into a protective diffusion layer at a portion of a trench underlying a gate electrode at a turn-off time and simultaneously improves a current density by narrowing a cell pitch. The semiconductor device includes a gate electrode embedded into a trench penetrating a base region. The gate electrode is disposed into a lattice shape in a planar view, and a protective diffusion layer is formed in a drift layer at the portion underlying thereof. At least one of blocks divided by the gate electrode is a protective contact region on which the trench is entirely formed. A protective contact for connecting the protective diffusion layer at a bottom portion of the trench and a source electrode is disposed on the protective contact region. | 10-31-2013 |
20140001472 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME | 01-02-2014 |
20140077232 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device capable of suppressing time variation of a threshold voltage and a method of manufacturing the same. A semiconductor device according to the present invention comprises a drift layer formed on a semiconductor substrate, first well regions formed in a surface layer of the drift layer, being apart from one another, a gate insulating film formed, extending on the drift layer and each of the first well regions, a gate electrode selectively formed on the gate insulating film, a source contact hole penetrating through the gate insulating film and reaching the inside of each of the first well regions, and a residual compressive stress layer formed on at least a side surface of the source contact hole, in which a compressive stress remains. | 03-20-2014 |
20140191251 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - It is expected that both reduction of the resistance of a source region and reduction of a leakage current in a gate oxide film be achieved in an MOSFET in a silicon carbide semiconductor device. A leakage current to occur in a gate oxide film of the MOSFET is suppressed by reducing roughness at an interface between a source region and the gate oxide film. If an impurity concentration is to become high at a surface portion of the source region, the gate oxide film is formed by dry oxidation or CVD process. If the gate oxide film is formed by wet oxidation, the impurity concentration at the surface portion of the source region is controlled at a low level. | 07-10-2014 |
20140299888 | SILICON CARBIDE SEMICONDUCTOR DEVICE - A SiC semiconductor device capable of increasing a switching speed without destroying a gate insulating film. In addition, in a SiC-MOSFET including an n-type semiconductor substrate formed of SiC, a p-type semiconductor layer is entirely or partially provided on an upper surface of a p-type well layer that has a largest area of the transverse plane among a plurality of p-type well layers provided in an n-type drift layer and is arranged on an outermost periphery immediately below a gate electrode pad. It is preferable that a concentration of an impurity contained in the p-type semiconductor layer be larger than that of the p-type well layer. | 10-09-2014 |
20150060882 | SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon carbide semiconductor device includes: a drift layer of the a first conduction type; a guard ring region of a second conduction type formed in annular form in a portion of one surface of the drift layer; a field insulating film formed on the one surface of the drift layer and surrounding the guard ring region; a Schottky electrode covering the guard ring region and the drift layer exposed inside the guard ring region and having an outer peripheral end existing on the field insulating film; and a surface electrode pad on the Schottky electrode, wherein an outer peripheral end of the surface electrode pad comes into contact with the field insulating film over the outer peripheral end of the Schottky electrode. | 03-05-2015 |
20150108564 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A source region of a MOSFET includes: a source contact region connected to a source pad; a source extension region adjacent to a channel region in a well region; and a source resistance control region arranged between the source extension region and the source contact region. The source resistance control region is different in an impurity concentration from the source extension region and the source contact region. These three regions are connected in series between the source pad and the channel region in the well region. | 04-23-2015 |
20150236012 | SEMICONDUCTOR DEVICE - In a semiconductor device having a built-in Schottky barrier diode as a reflux diode, a maximum unipolar current is increased in a reflux state and a leakage current is reduced in an OFF state. A Schottky electrode is provided in at least a part of a surface between adjacent well regions of a second conductivity type disposed on a surface layer side of a drift layer of a first conductivity type, and an impurity concentration of a first conductivity type in a first region provided in a lower part of the Schottky electrode and provided between the adjacent well regions is set to be higher than a first impurity concentration of a first conductivity type in the drift layer and to be lower than a second impurity concentration of a second conductivity type in the well region. | 08-20-2015 |
20150236119 | SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A silicon-carbide semiconductor device that relaxes field intensity in a gate insulating film, and that has a low ON-resistance. The silicon-carbide semiconductor device includes: an n-type silicon-carbide substrate; a drift layer formed on a topside of the n-type silicon-carbide substrate; a trench formed in the drift layer and that includes therein a gate insulating film and a gate electrode; a p-type high-concentration well region formed parallel to the trench with a spacing therefrom and that has a depth larger than that of the trench; and a p-type body region formed to have a depth that gradually increases when nearing from a position upward from the bottom end of the trench by approximately the thickness of the gate insulating film at the bottom of the trench toward the lower end of the p-type high-concentration well region. | 08-20-2015 |
20150333126 | SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - It is an object of the present invention to provide a silicon carbide semiconductor device that reduces an influence of an off-angle of a silicon carbide substrate on characteristics of the semiconductor device and achieves improved operational stability and reduced resistance. In a trench-gate silicon carbide MOSFET semiconductor device formed on the silicon carbide semiconductor substrate having the off-angle, a low-channel doped region is provided on a first sidewall surface side of the trench in a well region, and a high-channel doped region having an effective acceptor concentration lower than that of the low-channel doped region is provided on a second sidewall surface side of the trench in the well region. | 11-19-2015 |
20150357415 | INSULATED GATE SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - An insulated gate silicon carbide semiconductor device includes: a drift layer of a first conductivity type on a silicon carbide substrate of 4H type with a {0001} plane having an off-angle of more than 0° as a main surface; a first base region; a source region; a trench; a gate insulating film; a protective diffusion layer; and a second base region. The trench sidewall surface in contact with the second base region is a surface having a trench off-angle of more than 0° in a <0001> direction with respect to a plane parallel to the <0001> direction. The insulated gate silicon carbide semiconductor device can relieve an electric field of a gate insulating film and suppress an increase in on-resistance and provide a method for manufacturing the same. | 12-10-2015 |
20150380494 | SEMICONDUCTOR DEVICE - A semiconductor device capable of reducing ON-resistance changes with temperature, including a semiconductor substrate of a first conductivity type, a drift layer of the first conductivity type formed on the semiconductor substrate, a first well region of a second conductivity type formed in the front surface of the drift layer, a second well region of the second conductivity type formed in the front surface of the drift layer, and a gate structure that is formed on the front surface of the drift layer and forms a channel in the first well region and a channel in the second well region. A channel resistance of the channel formed in the first well region has a temperature characteristic that the channel resistance decreases with increasing temperature and a channel resistance of the channel formed in the second well region has a temperature characteristic that the channel resistance increases with increasing temperature. | 12-31-2015 |
Patent application number | Description | Published |
20150293444 | Photosensitive Resin Composition, Resist Laminate, And Articles Obtained By Curing Same (5) - The purpose of the present invention is to provide the following: a photosensitive epoxy resin composition that, via photolithography, can form a high-resolution, low-stress image that has vertical side walls and resists moisture and heat, and/or a resist laminate using said photosensitive epoxy resin composition; and an article or articles obtained by curing said photosensitive epoxy resin composition and/or resist laminate. The present invention is a photosensitive resin composition containing the following: an epoxy resin (A), a polyol compound (B) having a specific structure, a cationic-polymerization photoinitiator (C), a silane compound (D) containing an epoxy group, and a reactive epoxy monomer (E) having a specific structure. The epoxy resin (A) contains the phenol derivative represented by formula (1), an epoxy resin (a) obtained via a reaction with epihalohydrin, and an epoxy resin (b) that can be represented by formula (2). | 10-15-2015 |
20150293448 | Photosensitive Resin Composition, Resist Laminate, And Cured Product (1) Thereof - The purpose of the present invention is to provide: a photosensitive epoxy resin composition and/or a resist laminate of said resin composition that makes it possible to use photolithography to form an image having a vertical sidewall shape and fine resolution, low stress, and heat/humidity resistance; and a cured product of said resin composition and said resist laminate. The present invention is a photosensitive resin composition comprising: (A) an epoxy resin; (B) a polyol compound having a specific structure; (C) a photocationic polymerization initiator; and (D) an epoxy group-containing silane compound. The epoxy resin (A) comprises: an epoxy resin (a) obtained by reacting a phenol derivative that is represented by formula (1) with an epihalohydrin; and an epoxy resin (b) that is represented by formula (2). | 10-15-2015 |
20150301450 | Photosensitive Resin Composition, Resist Laminate, And Cured Product (2) Thereof - The purpose of the present invention is to provide: a photosensitive epoxy resin composition and/or a resist laminate of said resin composition that makes it possible to use photolithography to form an image having a vertical sidewall shape and fine resolution, low stress, and heat/humidity resistance; and a cured product of said resin composition and said resist laminate. The present invention is a photosensitive resin composition comprising: (A) an epoxy resin; (B) a polyphenol compound having a specific structure; (C) a photocationic polymerization initiator; and (D) an epoxy group-containing silane compound. The epoxy resin (A) comprises: an epoxy resin (a) obtained by reacting a phenol derivative that is represented by formula (1) with an epihalohydrin; and an epoxy resin (b) that is represented by formula (2). | 10-22-2015 |
20150309409 | Photosensitive Resin Composition, Resist Laminate, And Articles Obtained By Curing Same (7) - The purpose of the present invention is to provide the following: a photosensitive epoxy resin composition that, via photolithography, can form a high-resolution, low-stress image that has vertical side walls and resists moisture and heat, and/or a resist laminate using said photosensitive epoxy resin composition; and an article or articles obtained by curing said photosensitive epoxy resin composition and/or resist laminate. The present invention is a photosensitive resin composition containing the following: an epoxy resin (A), a polyhydric phenol compound (B) having a specific structure, a cationic-polymerization photoinitiator (C), a silane compound (D) containing an epoxy group, and a reactive epoxy monomer (E) having a specific structure. The epoxy resin (A) contains the phenol derivative represented by formula (1), an epoxy resin (a) obtained via a reaction with epihalohydrin, and an epoxy resin (b) that can be represented by formula (2). The reactive epoxy monomer (E) is a bisphenol epoxy resin. | 10-29-2015 |
Patent application number | Description | Published |
20100030873 | NETWORK MEDIA CHANNELS - A system, including: a first network coupled to at least a first server and a second server; the first server comprising: storage configured to store media data, and a network media channel manager configured to send and receive the media data according to one or more network media channels; a publishing client coupled to the first server, the publishing client configured to publish the media data using a first network media channel selected from the one or more network media channels. | 02-04-2010 |
20100138228 | REGIONAL ATTRIBUTE DETERMINATION METHOD, REGIONAL ATTRIBUTE DETERMINATION DEVICE, AND REGIONAL ATTRIBUTE DETERMINATION PROGRAM - In a regional attribute determination method for determining a regional attribute representing an attribute of people gathering in each region, user information including the locations and attributes of a number of users is acquired from a number of portable information terminal devices used by the number of users, the acquired user information of the number of users is stored in a user information storage part, and the regional attribute is determined on the basis of the user information of the number of users stored in the user information storage part. | 06-03-2010 |
20130110822 | Indicating Location Status | 05-02-2013 |
20130151552 | REDUCING REDIRECTS - Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for modifying search results. In one aspect, a method includes receiving data that specify a set of responsive resources for a search request that was submitted by a user device. A determination is made that a resource request for a particular resource from the set of responsive resources will cause the user device to be redirected to a different resource than the particular resource. In response to the determination a reference to the different resource is inserted into a search result for the particular resource. The search result for the particular resource is provided to the user device, where the search result includes the reference to the different resource. | 06-13-2013 |
20140101136 | TRANSCODING AND SERVING RESOURCES - Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for transcoding and providing resources. A query is received. A resource is generated, and the resource, when processed by a client device, causes the client device to perform various operations. The operations include displaying a search result having an associated landing page and detecting user interaction with the search result. The operations include, in response to detecting user interaction with the search result, displaying a first portion of the landing page that is embedded within the resource and requesting, over a network, a second portion of the landing page. The operations include receiving the second portion of the landing page, and loading the second portion of the landing page. The generated resource is provided in response to the query. | 04-10-2014 |
20140108510 | UTILIZING PUBLISHING AND SUBSCRIBING CLIENTS IN NETWORK MEDIA CHANNELS - Utilizing publishing and subscribing clients in network media channels having a first network coupled to at least a first server and a second server. The first server includes storage configured to store media data, and a network media channel manager configured to send and receive the media data according to one or more network media channels. The first server is also coupled to a publishing client, which is configured to publish the media data using a first network media channel selected from the one or more network media channels, and a subscribing client in a local network external to a first network. The subscribing client subscribes and accesses the media data using a second network media channel selected from the one or more network media channels. One or more network media channels include at least one local channel that is limited to the local network so that only the subscribing client can present to the local channel. | 04-17-2014 |
20150154300 | TRANSCODING AND SERVING RESOURCES - Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for transcoding and providing resources. A query is received. A resource is generated, and the resource, when processed by a client device, causes the client device to perform various operations. The operations include displaying a search result having an associated landing page and detecting user interaction with the search result. The operations include, in response to detecting user interaction with the search result, displaying a first portion of the landing page that is embedded within the resource and requesting, over a network, a second portion of the landing page. The operations include receiving the second portion of the landing page, and loading the second portion of the landing page. The generated resource is provided in response to the query. | 06-04-2015 |
20150161267 | Deduplication in Search Results - Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for identifying a plurality of search results that will be provided in response to a search query received from a user device. Two or more of the search results may reference at least two different resources that are responsive to the search query. It may be determined that the user device will be served a same set of content in response to user interaction with each of the two or more search results. In response to the determination, a replacement search result may be generated, including a reference to a resource serving the same set of content. In response to receiving the search query, a search page may be presented that includes the replacement search result and does not include at least one of the two or more identified search results. | 06-11-2015 |