Hyoung-Sub
Hyoung-Sub Kim, Seoul KR
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20110017990 | Thin-film transistor and method of manufacturing the same - Example embodiments relate to thin-film transistors (TFT) and methods for fabricating the same. A thin-film transistor according to example embodiments may include a gate, a gate insulation layer, a channel layer including a first oxide semiconductor layer and a second oxide semiconductor layer, and a source and drain on opposite sides of the channel layer. The first oxide semiconductor layer may have relatively large crystal grains compared to the second oxide semiconductor layer. | 01-27-2011 |
Hyoung-Sub Kim, Seongnam-Si KR
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20150099344 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a method of manufacturing a semiconductor device. The method includes forming a sacrificial film as part of a process of forming a semiconductor device. The sacrificial film has a relatively high etch selectivity with respect to other materials of the semiconductor device so as to reduce loss of etching masks and improve the quality of a components (e.g., buried contacts) of the semiconductor device. | 04-09-2015 |
20150132943 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a method of manufacturing a semiconductor device. The method includes forming isolated contact filling portions and an etch control portion, the isolated contact filling portions filling contact holes defined in a support layer and are spaced apart from each other in a first direction and a second direction perpendicular to the first direction and the etch control layer surrounding the isolated contact filling portions, forming an interconnection layer on the isolated contact filling portions and the etch control portion, and forming interconnection patterns by photo-etching the interconnection layer, the isolated contact patterns, and the etch control portion, the interconnection patterns being relatively narrow in the first direction and relatively wide in the second direction. | 05-14-2015 |
Hyoung-Sub Kim, Seongnamg-Si KR
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20150132942 | METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES HAVING BURIED CONTACTS AND RELATED SEMICONDUCTOR DEVICES - Provided is a method of manufacturing a semiconductor device. The method includes: forming bit line structures spaced apart from each other by first groove disposed in first direction, extending in first direction, and spaced apart from each other in second direction perpendicular to first direction, on substrate in which word line is buried; forming multilayer spacer on both sidewalls of bit line structure; forming sacrificial layer to fill first groove; forming second grooves spaced apart from each other in first direction and second direction, by patterning sacrificial layer; etching outermost spacer of multilayer spacer located in second groove; forming first supplementary spacer in second groove; forming insulating layer to fill second groove; and forming third grooves spaced apart from each other in first direction and second direction, on both sides of first supplementary spacer, by removing sacrificial layer and insulating layer. | 05-14-2015 |
Hyoung-Sub Shim, Seoul KR
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20140216919 | METHOD AND APPARATUS FOR FABRICATING GRAPHENE USING A PLURALITY OF LIGHT SOURCES - A method of fabricating graphene using a plurality of light sources, and an apparatus for fabricating graphene are provided. The apparatus for fabricating graphene includes a first light source configured to irradiate a graphite oxide layer on a substrate, a second light source configured to further irradiate the irradiated graphite oxide layer, and a control unit configured to control an order of irradiation from the first light source and the second light source. | 08-07-2014 |
20140220258 | METHOD OF FABRICATING GRAPHENE USING A PLURALITY OF LIGHT SOURCES - A method of fabricating graphene using a plurality of light sources is provided. The method includes irradiating a graphite oxide layer on a substrate with light from a first light source, and irradiating the irradiated graphite oxide layer with light from a second light source. | 08-07-2014 |
20140220289 | OPTICAL DISK USED FOR FABRICATING GRAPHENE AND METHOD OF MANUFACTURING THE SAME - An optical disk for fabricating graphene, a multilayered plate for fabricating graphene, and a method of manufacturing the optical disk or multilayered plate are provided. The optical disk includes a thermoplastic polymer substrate with a reflection layer for reflecting incident light, and a graphite oxide layer applied on the thermoplastic polymer substrate. The method of manufacturing a disk for fabricating graphene involves: obtaining a thermoplastic polymer substrate with a reflection layer for reflecting incident light; and applying a graphite oxide layer on the thermoplastic polymer substrate. | 08-07-2014 |
20140220290 | DISK FOR FABRICATING GRAPHENE AND METHOD OF MANUFACTURING THE SAME - A disk used for fabricating graphene, a multilayered plate, and a method of manufacturing the same are provided. The disk includes a thermoplastic polymer substrate with a reflection layer disposed on one side of the thermoplastic polymer substrate; and a graphite oxide layer provided on the thermoplastic polymer substrate. The method of manufacturing a disk for fabricating graphene involves: obtaining a thermoplastic polymer substrate with a reflection layer disposed on one side thereof; and applying a graphite oxide layer on the thermoplastic polymer substrate. | 08-07-2014 |