Patent application number | Description | Published |
20080224168 | Intride-based semiconductor light emitting diode and method of manufacturing the same - A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer. | 09-18-2008 |
20080286894 | GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DIODE AND PROCESS FOR PREPARING THE SAME - A process for preparing a gallium nitride based semiconductor light emitting diode includes the step of: providing a substrate for growing a gallium nitride based semiconductor material; forming a lower clad layer on the substrate using a first conductive gallium nitride based semiconductor material; forming an active layer on the lower conductive clad layer using an undoped gallium nitride based semiconductor material; forming an upper clad layer on the active layer using a second conductive gallium nitride based semiconductor material; removing at least a portion of the upper clad layer and active layer at a predetermined region so as to expose the corresponding portion of the lower clad layer; and forming, on the upper surface of the upper clad layer, an ohmic contact forming layer made of In | 11-20-2008 |
20100193823 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate. | 08-05-2010 |
20110084305 | NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DIODE - A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer. | 04-14-2011 |
20110193060 | NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DIODE - A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer. | 08-11-2011 |
20110248240 | GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DIODE - The present invention provides a gallium nitride based semiconductor light emitting diode having high transparency, and at the same time, capable of improving contact resistance between a p-type GaN layer and electrode. These objects can be accomplished by forming, on an upper part of a upper clad layer made of p-GaN, an ohmic contact forming layer using MIO, ZIO and CIO (In | 10-13-2011 |