Patent application number | Description | Published |
20110084340 | Voids in STI Regions for Forming Bulk FinFETs - An integrated circuit structure includes a substrate; two insulation regions over the substrate, with one of the two insulation regions including a void therein; and a first semiconductor strip between and adjoining the two insulation regions. The first semiconductor strip includes a top portion forming a fin over top surfaces of the two insulation regions. | 04-14-2011 |
20110095372 | Forming Inter-Device STI Regions and Intra-Device STI Regions Using Different Dielectric Materials - An integrated circuit structure includes a substrate having a first portion in a first device region and a second portion in a second device region; and two insulation regions in the first device region and over the substrate. The two insulation regions include a first dielectric material having a first k value. A semiconductor strip is between and adjoining the two insulation regions, with a top portion of the semiconductor strip forming a semiconductor fin over top surfaces of the two insulation regions. An additional insulation region is in the second device region and over the substrate. The additional insulation region includes a second dielectric material having a second k value greater than the first k value. | 04-28-2011 |
20110097889 | STI Shape Near Fin Bottom of Si Fin in Bulk FinFET - A method of forming an integrated circuit structure includes providing a semiconductor substrate including a top surface; forming a first insulation region and a second insulation region in the semiconductor substrate; and recessing the first insulation region and the second insulation region. Top surfaces of remaining portions of the first insulation region and the second insulation region are flat surfaces or divot surfaces. A portion of the semiconductor substrate between and adjoining removed portions of the first insulation region and the second insulation region forms a fin. | 04-28-2011 |
20110298049 | CMOS Device with Raised Source and Drain Regions - A semiconductor structure includes a semiconductor substrate comprising a PMOS region and an NMOS region; a PMOS device in the PMOS region; and an NMOS device in the NMOS region. The PMOS device includes a first gate stack on the semiconductor substrate; a first offset spacer on a sidewall of the first gate stack; a stressor in the semiconductor substrate and adjacent to the first offset spacer; and a first raised source/drain extension region on the stressor and adjoining the first offset spacer, wherein the first raised source/drain extension region has a higher p-type dopant concentration than the stressor. The NMOS device in the NMOS region includes a second gate stack on the semiconductor substrate; a second offset spacer on a sidewall of the second gate stack; a second raised source/drain extension region on the semiconductor substrate and adjoining the second offset spacer; and a deep source/drain region adjoining the second raised source/drain extension region, wherein the deep source/drain region is free from stressors formed in the semiconductor substrate. | 12-08-2011 |
20130277757 | Voids in STI Regions for Forming Bulk FinFETs - An integrated circuit structure includes a substrate; two insulation regions over the substrate, with one of the two insulation regions including a void therein; and a first semiconductor strip between and adjoining the two insulation regions. The first semiconductor strip includes a top portion forming a fin over top surfaces of the two insulation regions. | 10-24-2013 |
20140004682 | Forming Inter-Device STI Regions and Intra-Device STI Regions Using Different Dielectric Materials | 01-02-2014 |
Patent application number | Description | Published |
20090235210 | ORIENTATION OPTIMIZATION METHOD OF 2-PIN LOGIC CELL - In an orientation optimization, at least one signal chain path starting from a signal source and passing through a series of M 2-pin logic cells is located according to a netlist. An output of the Nth 2-pin logic cell in the series of M 2-pin logic cells, where N09-17-2009 | |
20110093828 | Pin-out Designation Method for Package-Board Codesign - A pin out designation method for package board codesign having steps of defining pin characteristics and requirements, generating multiple pin patterns, pin blocks construction and grouping and pin blocks floorplanning. Designers may use an EDA tool to generate multiple pin patterns, use the pin patterns to construct multiple pin blocks, group the pin blocks around four sides of a chip and adjusts the pin blocks into a minimized package size of the chip. | 04-21-2011 |
20150067632 | EFFICIENT ANALOG LAYOUT PROTOTYPING BY LAYOUT REUSE WITH ROUTING PRESERVATION - A computer implemented method for routing preservation is presented. The method includes decomposing, using the computer, a geometric relationship between a first module, a second module, and a routing path of a source layout, when the computer is invoked to route the solution path. The method further includes disposing, using the computer, the routing path in a solution layout in accordance with the geometric relationship. The solution layout is not defined by a scaling of the source layout. | 03-05-2015 |
Patent application number | Description | Published |
20110068405 | FIN FIELD EFFECT TRANSISTOR - An exemplary structure for the fin field effect transistor comprises a substrate comprising a major surface; a plurality of fin structures protruding from the major surface of the substrate, wherein each fin structure comprises an upper portion and a lower portion separated at a transition location at where the sidewall of the fin structure is at an angle of 85 degrees to the major surface of the substrate, wherein the upper portion has sidewalls that are substantially perpendicular to the major surface of the substrate and a top surface having a first width, wherein the lower portion has tapered sidewalls on opposite sides of the upper portion and a base having a second width larger than the first width; and a plurality of isolation structures between the fin structures, wherein each isolation structure extends from the major surface of the substrate to a point above the transition location. | 03-24-2011 |
20110233679 | INTEGRATED CIRCUIT INCLUDING FINFETS AND METHODS FOR FORMING THE SAME - An integrated circuit including a plurality of Fin field effect transistors (FINFETs) is provided. The integrated circuit includes a plurality of fin-channel bodies over a substrate. The fin-channel bodies include a first fin-channel body and a second fin-channel body. A gate structure is disposed over the fin-channel bodies. At least one first source/drain (S/D) region of a first FINFET is adjacent the first fin-channel body. At least one second source/drain (S/D) region of a second FINFET is adjacent the second fin-channel body. The at least one first S/D region is electrically coupled with the at least one second S/D region. The at least one first and second S/D regions are substantially free from including any fin structure. | 09-29-2011 |
20120009690 | IN-SITU SPECTROMETRY - The present disclosure provides a system for in-situ spectrometry. The system includes a wafer-cleaning machine that cleans a surface of a semiconductor wafer using a cleaning solution. The system also includes a spectrometry machine that is coupled to the wafer-cleaning machine. The spectrometry machine receives a portion of the cleaning solution from the wafer-cleaning machine. The portion of the cleaning solution collects particles from the wafer during the cleaning. The spectrometry machine is operable to analyze a particle composition of a portion of the wafer based on the portion of the cleaning solution, while the wafer remains in the wafer-cleaning machine during the particle composition analysis. | 01-12-2012 |
20120091538 | FINFET AND METHOD OF FABRICATING THE SAME - The disclosure relates to a fin field effect transistor (FinFET). An exemplary structure for a FinFET comprises a substrate comprising a top surface; a first insulation region and a second insulation region over the substrate top surface comprising tapered top surfaces; a fin of the substrate extending above the substrate top surface between the first and second insulation regions, wherein the fin comprises a recessed portion having a top surface lower than the tapered top surfaces of the first and second insulation regions, wherein the fin comprises a non-recessed portion having a top surface higher than the tapered top surfaces; and a gate stack over the non-recessed portion of the fin. | 04-19-2012 |
20130062669 | SILICIDE FORMATION AND ASSOCIATED DEVICES - Improved silicide formation and associated devices are disclosed. An exemplary method includes providing a semiconductor material having spaced source and drain regions therein, forming a gate structure interposed between the source and drain regions, performing a gate replacement process on the gate structure to form a metal gate electrode therein, forming a hard mask layer over the metal gate electrode, forming silicide layers on the respective source and drain regions in the semiconductor material, removing the hard mask layer to expose the metal gate electrode, and forming source and drain contacts, each source and drain contact being conductively coupled to a respective one of the silicide layers. | 03-14-2013 |
20130228865 | FIN FIELD EFFECT TRANSISTOR - A FinFET is described, the FinFET includes a substrate including a top surface and a first insulation region and a second insulation region over the substrate top surface comprising tapered top surfaces. The FinFET further includes a fin of the substrate extending above the substrate top surface between the first and second insulation regions, wherein the fin includes a recessed portion having a top surface lower than the tapered top surfaces of the first and second insulation regions, wherein the fin includes a non-recessed portion having a top surface higher than the tapered top surfaces. The FinFET further includes a gate stack over the non-recessed portion of the fin. | 09-05-2013 |
20130280899 | SILICIDE FORMATION AND ASSOCIATED DEVICES - Improved silicide formation and associated devices are disclosed. An exemplary method includes providing a semiconductor material having spaced source and drain regions therein, forming a gate structure interposed between the source and drain regions, performing a gate replacement process on the gate structure to form a metal gate electrode therein, forming a hard mask layer over the metal gate electrode, forming silicide layers on the respective source and drain regions in the semiconductor material, removing the hard mask layer to expose the metal gate electrode, and forming source and drain contacts, each source and drain contact being conductively coupled to a respective one of the silicide layers. | 10-24-2013 |
20140001574 | IMPROVED SILICIDE FORMATION AND ASSOCIATED DEVICES | 01-02-2014 |
20140179077 | METHOD OF FORMING SEMICONDUCTOR DEVICE INCLUDING SILICIDE LAYERS - A method includes forming a gate structure on a semiconductor material region, wherein the gate structure includes spacer elements abutting a gate electrode layer. The gate electrode layer is etched to provide a recess. A hard mask layer is formed over the gate electrode layer in the recess. Silicide layers are then formed on a source region and a drain region disposed in the semiconductor material region, while the hard mask is disposed over the gate electrode layer. A source contact and a drain contact is then provided, each source and drain contact being conductively coupled to a respective one of the silicide layers. | 06-26-2014 |
20140327091 | FIN FIELD EFFECT TRANSISTOR - A fin field effect transistor including a first insulation region and a second insulation region over a top surface of a substrate. The first insulation region includes tapered top surfaces, and the second insulation region includes tapered top surfaces. The fin field effect transistor further includes a fin extending above the top surface between the first insulation region and the second insulation region. The fin includes a first portion having a top surface below the tapered top surfaces of the first insulation region. The fin includes a second portion having a top surface above the tapered top surfaces of the first insulation region. | 11-06-2014 |
Patent application number | Description | Published |
20120153437 | ESD PROTECTION STRUCTURE FOR 3D IC - An electrostatic discharge (ESD) protection structure for a 3D IC is provided. The ESD protection structure includes a first active layer, a through-silicon via (TSV) device and a second active layer. The TSV is disposed in the first active layer, and the second active layer is stacked with the first active layer. The second active layer includes a substrate and an ESD protection device, wherein the ESD protection device having a doping area embedded in the substrate, and the ESD protection device electrically connects the TSV device. | 06-21-2012 |
20130169355 | Integrated Circuit Device - An integrated circuit device includes: a first chip including a first substrate and a main circuit formed on said first chip; a second chip stacked on the first substrate and including a second substrate that is independent from the first substrate, and a protective circuit for protecting the main circuit; and a conductive channel unit extending from the protective circuit and electrically connected to the main circuit. | 07-04-2013 |
20140175632 | THREE-DIMENSIONAL INTEGRATED CIRCUIT - A three-dimensional integrated circuit, including a first adhesive bonding layer, a first chip, a second chip, and an inter-stratum thermal pad, is provided. The first adhesive bonding layer has a first surface and a second surface opposite to each other. The first chip is disposed on the first surface of the first adhesive bonding layer. The first chip includes a hot zone. The second chip is disposed on the second surface of the first adhesive bonding layer. The inter-stratum thermal pad is embedded in the first adhesive bonding layer and faces to the hot zone. | 06-26-2014 |
Patent application number | Description | Published |
20140293524 | EJECTING APPARATUS AND ELECTRONIC DEVICE EMPLOYING THE EJECTING APPARATUS - An electronic device comprises a main body, a plurality of I/O interfaces, and an ejecting apparatus. The ejecting apparatus is mounted on the main body and comprises an enclosure, a supporting member received in the enclosure, a carrier secured on the supporting member to support the I/O interfaces, a first driving unit, and a second driving unit. The first driving unit drives the carrier to slide along a first direction, and the second driving unit drives the carrier to slide along a second direction opposite to the first direction. When the I/O interfaces are exposed out of the enclosure, the first force is larger than the second force. When the carrier is operated to slide to a position where the second force is larger than the first force, the I/O interfaces are driven to be received in the enclosure. | 10-02-2014 |
20140368996 | PIVOT MECHANISM OF FOLDABLE ELECTRONIC DEVICE - A pivot mechanism rotatably coupes a cover to a base of a foldable electronic device. The pivot mechanism includes a connector, a first rotation assembly, and a second rotation assembly. The first rotation assembly is rotatably coupled to the base and fixedly attached to the connector. The second rotation assembly is fixedly coupled to the cover and rotatably coupled to the connector. The first rotation assembly rotates relative to the base and the second rotation assembly remains fixed relative to the connector as the cover is rotated open to a first angle,. The second rotation assembly rotates relative to the connector as the cover is rotated further to a second angle. | 12-18-2014 |