Huesken
Dieter Huesken, Freiburg I. Br. DE
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20150238515 | ORGANIC COMPOSITIONS TO TREAT KRAS-RELATED DISEASES - The present disclosure relates to RNAi agents useful in methods of treating KRAS-related diseases such as a proliferative disease, including without limitation a solid or liquid cancer, adenocarcinoma, colorectal cancer, advanced and/or metastatic colorectal cancer, colon cancer, lung, non-small cell lung cancer and lung adenocarcinoma, acute myelogenous lung, bladder, brain, breast, cervical, endometrial, gastric, head and neck, kidney, leukemia, myelodysplastic syndrome, myeloid leukemia, liver, melanoma, ovarian, pancreatic, prostate, testicular, thyroid cancers, and cardio-facio-cutaneous (CFC) syndrome and Noonan syndrome, and similar and related diseases, using a therapeutically effective amount of a RNAi agent to KRAS. | 08-27-2015 |
Holger Huesken, Munich DE
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20130092977 | POWER SEMICONDUCTOR DIODE, IGBT, AND METHOD FOR MANUFACTURING THEREOF - A power semiconductor diode is provided. The power semiconductor diode includes a semiconductor substrate having a first emitter region of a first conductivity type, a second emitter region of a second conductivity type, and a drift region of the first conductivity type arranged between the first emitter region and the second emitter region. The drift region forms a pn-junction with the second emitter region. A first emitter metallization is in contact with the first emitter region. The first emitter region includes a first doping region of the first conductivity type and a second doping region of the first conductivity type. The first doping region forms an ohmic contact with the first emitter metallization, and the second doping region forms a non-ohmic contact with the first emitter metallization. A second emitter metallization is in contact with the second emitter region. | 04-18-2013 |
20150162406 | Semiconductor Device with Recombination Region - A semiconductor device includes a pn junction between a drift zone and a charge-carrier transfer region in a semiconductor body. An access channel provides a permanent charge carrier path connecting the drift zone with a recombination region through a separation region between the drift zone and the recombination region. The access channel adjusts a plasma density in the drift zone and the recombination region. | 06-11-2015 |
Holger Huesken, Muenchen DE
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20140319578 | Insulated Gate Bipolar Transistor - A semiconductor body of an IGBT includes: a first base region of a second conductivity type; a source region of a first conductivity type different from the second conductivity type and forming a first pn-junction with the first base region; a drift region of the first conductivity type and forming a second pn-junction with the first base region; a collector region of the second conductivity type; at least one trench filled with a gate electrode and having a first trench portion of a first width and a second trench portion of a second width, the second width being different from the first width; and a field stop region having the first conductivity type and located between the drift region and the collector region. The field stop region includes a plurality of buried regions having the second conductivity type. | 10-30-2014 |
20150028383 | Power MOS Transistor with Integrated Gate-Resistor - A transistor device comprises: at least one individual transistor cell arranged in a transistor cell field on a semiconductor body, each individual transistor cell comprising a gate electrode; a gate contact, electrically coupled to the gate electrodes of the transistor cells and configured to switch on the at least one transistor cell by providing a gate current in a first direction and configured to switch off the at least one transistor cell by providing a gate current in a second direction, the second direction being opposite to the first direction; at least one gate-resistor structure monolithically integrated in the transistor device, the gate-resistor structure providing a first resistance for the gate current when the gate current flows in the first direction, and providing a second resistance for the gate current, which is different from the first resistance, when the gate current flows in the second direction. | 01-29-2015 |
20150228744 | TRANSISTOR DEVICE WITH INTEGRATED GATE-RESISTOR - A transistor device includes an individual transistor cell arranged in a transistor cell field on a semiconductor body, the individual transistor cell having a gate electrode. The transistor device further includes a gate contact, electrically coupled to the gate electrode and configured to switch on the individual transistor cell by providing a gate current in a first direction and configured to switch off the individual transistor cell by providing a gate current in a second direction, the second direction being opposite to the first direction. The transistor device also includes a gate-resistor structure monolithically integrated in the transistor device. The gate-resistor structure provides a first resistance for the gate current when the gate current flows in the first direction, and provides a second resistance for the gate current, which is different from the first resistance, when the gate current flows in the second direction. | 08-13-2015 |
Holger Huesken, Munchen DE
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20150028456 | Semiconductor Device, a Semiconductor Wafer Structure, and a Method for Forming a Semiconductor Wafer Structure - Embodiments relate to a semiconductor device, a semiconductor wafer structure, and a method for manufacturing or forming a semiconductor wafer structure. The semiconductor device includes a semiconductor substrate with a first region having a first conductivity type and a second region having a second conductivity type. The semiconductor device further includes an oxide structure with interrupted areas and a metal layer structure being in contact with the second region at least at the interrupted areas of the oxide. | 01-29-2015 |