Patent application number | Description | Published |
20150206939 | EPITAXY IN SEMICONDUCTOR STRUCTURE AND MENUFACUTING METHOD OF THE SAME - The present disclosure provides a semiconductor structure having an insulating layer positioning on a substrate; a semiconductor fin partially located in the insulating layer; and a metal gate over the semiconductor fin and the insulating layer. The semiconductor fin includes a first region including a first lattice constant and a second region in proximity to the metal gate, including a second lattice constant. At least one dislocation is located only in the second region of the semiconductor fin. The present disclosure provides a method for manufacturing a semiconductor structure, including forming a gate over a first semiconductor layer, removing a portion of the first semiconductor layer in proximity to a sidewall of the gate and obtaining a recess, and forming a second semiconductor layer in the recess. At least one dislocation is in-situ formed in the second semiconductor layer without extending to the first semiconductor layer. | 07-23-2015 |
20150221509 | IN-SITU STRAINING EPITAXIAL PROCESS - A method includes forming a recess in a semiconductor substrate, the recess being adjacent to a gate stack, performing an epitaxial growth process within the recess to form a straining region, and forming a defect within the straining region in-situ with the epitaxial growth process. | 08-06-2015 |
20150255578 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a gate structure located on a substrate and a raised source/drain region adjacent to the gate structure. The raised source/drain region includes: a first epitaxial-grown doped layer of the raised source/drain region in contact with the substrate; a second epitaxial-grown doped layer on the first epitaxial-grown doped layer and including a same dopant species as the first epitaxial-grown doped layer, wherein the second epitaxial-grown doped layer includes a higher dopant concentration than the first epitaxial-grown doped layer and interfacing the gate structure by using a predetermined distance; and a third epitaxial-grown doped layer on the second epitaxial-grown doped layer and including the same dopant species as the first epitaxial-grown doped layer, wherein the third epitaxial-grown doped layer includes a higher dopant concentration than the second epitaxial-grown doped layer. | 09-10-2015 |
20150255601 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF - The present disclosure provides a semiconductor structure includes a substrate and an epitaxy region that is partially disposed in the substrate. A doping concentration of the epitaxy region increases from a bottom portion to a top portion of the epitaxy region. The present disclosure also provides a method for manufacturing the semiconductor structure, including forming a recess in a substrate; forming an epitaxy region in the recess; and in situ doping the epitaxy region to form a doping concentration profile increasing from a bottom portion to a top portion of the epitaxy region. | 09-10-2015 |