Patent application number | Description | Published |
20120187282 | IMAGE SENSOR WITH ANTI-REFLECTION LAYER AND METHOD OF MANUFACTURING THE SAME - An image sensor the image sensor comprising an absorption layer disposed on a silicon substrate, the absorption layer having at least one of SiGe or Ge, and an antireflection layer disposed directly thereon. | 07-26-2012 |
20120205769 | BACK SIDE ILLUMINATED IMAGE SENSOR WITH REDUCED SIDEWALL-INDUCED LEAKAGE - Provided is an image sensor device. The image sensor device includes having a front side, a back side, and a sidewall connecting the front and back sides. The image sensor device includes a plurality of radiation-sensing regions disposed in the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers and extends beyond the sidewall of the substrate. The image sensor device includes a bonding pad that is spaced apart from the sidewall of the substrate. The bonding pad is electrically coupled to one of the interconnect layers of the interconnect structure. | 08-16-2012 |
20130037890 | MULTIPLE GATE DIELECTRIC STRUCTURES AND METHODS OF FORMING THE SAME - The present disclosure provides for multiple gate dielectric semiconductor structures and methods of forming such structures. In one embodiment, a method of forming a semiconductor structure includes providing a substrate including a pixel array region, an input/output (I/O) region, and a core region. The method further includes forming a first gate dielectric layer over the pixel array region, forming a second gate dielectric layer over the I/O region, and forming a third gate dielectric layer over the core region, wherein the first gate dielectric layer, the second gate dielectric layer, and the third gate dielectric layer are each formed to be comprised of a different material and to have a different thickness. | 02-14-2013 |
20130320420 | CMOS Image Sensors and Methods for Forming the Same - A device includes a diode, which includes a first, a second, and a third doped region in a semiconductor substrate. The first doped region is of a first conductivity type, and has a first impurity concentration. The second doped region is of the first conductivity type, and has a second impurity concentration lower than the first impurity concentration. The second doped region encircles the first doped region. The third doped region is of a second conductivity type opposite the first conductivity type, wherein the third doped region overlaps a portion of the first doped region and a portion of the second doped region. | 12-05-2013 |
20130341692 | Novel [N] Profile in Si-Ox Interface for CMOS Image Sensor Performance Improvement - A semiconductor device including first and second isolation regions supported by a substrate, a first array well supported by the first isolation region, the first array well having a first field implant layer embedded therein, the first field implant layer surrounding a first shallow trench isolation region, a second array well supported by the second isolation region, the second array well supporting a doped region and a drain and having a second field implant layer embedded therein, the second field implant layer surrounding a second shallow trench isolation region, a stack of photodiodes disposed in the substrate between the first and second isolation regions, and a gate oxide formed over an uppermost photodiode of the stack of the photodiodes, the gate oxide and a silicon of the uppermost photodiode forming an interface, a nitrogen concentration at the interface offset from a peak nitrogen concentration. | 12-26-2013 |
20140248734 | CMOS Image Sensors and Methods for Forming the Same - A method includes forming a first implantation mask comprising a first opening, implanting a first portion of a semiconductor substrate through the first opening to form a first doped region, forming a second implantation mask comprising a second opening, and implanting a second portion of the semiconductor substrate to form a second doped region. The first portion of the semiconductor substrate is encircled by the second portion of the semiconductor substrate. A surface layer of the semiconductor substrate is implanted to form a third doped region of an opposite conductivity type than the first and the second doped regions. The third doped region forms a diode with the first and the second doped regions. | 09-04-2014 |
20150028403 | Semiconductor Switching Device Separated by Device Isolation - A device including a gate structure formed over a semiconductor substrate, the gate structure having extensions, a device isolation structure formed into the semiconductor substrate adjacent the gate structure, wherein the extensions are over a portion of the device isolation structure, and source/drain regions on both sides of the gate structure, the source/drain regions being formed in a gap in the device isolation structure and being partially enclosed by the extensions of the gate structure. | 01-29-2015 |
20150041945 | PICKUP DEVICE STRUCTURE WITHIN A DEVICE ISOLATION REGION - A device includes a device isolation region formed into a semiconductor substrate, a doped pickup region formed into the device isolation region, a dummy gate structure that includes at least one structure that partially surrounds the doped pickup region, and a via connected to the doped pickup region. | 02-12-2015 |