Patent application number | Description | Published |
20080258147 | SEMICONDUCTOR DEVICE FORMING METHOD - In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed. | 10-23-2008 |
20090021684 | LIQUID-CRYSTAL DISPLAY DEVICE - Techniques are provided for unifying steps of sealing material so that the yield and the reliability of a liquid-crystal display device become high. A starting film of scanning lines is patterned so that prismatic dummy wirings | 01-22-2009 |
20090072235 | ELECTRONIC DEVICE HAVING LIQUID CRYSTAL DISPLAY DEVICE - A display device of the present invention includes a first substrate and a second substrate opposed to each other, a liquid crystal interposed between the first substrate and the second substrate, an active matrix circuit and a driving circuit each comprising a thin film transistor formed over the first substrate, a resin layer formed over the active matrix circuit and the driving circuit, a spacer formed over the active matrix circuit, a sealing material formed over the driving circuit, and a filler included in the sealing material and in contact with the resin layer. | 03-19-2009 |
20090072238 | INSULATED GATE FIELD EFFECT SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME - An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion implantation with the gate electrode as a mask to form a pair of impurity regions. The gate electrode is then anodic oxidized to form an oxide film enclosing the electrode. With the oxide film as a mask, highly doped regions are formed by ion implantation in order to define lightly doped regions between the highly doped regions and the channel region located therebetween. | 03-19-2009 |
20090101910 | Thin-film transistor - A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking lay r and a gate insulator of the transistor. | 04-23-2009 |
20090152631 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal, and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film. The metal silicide layer may be obtained otherwise by tightly adhering a metal coating to the exposed source and drain regions using an insulator formed into an approximately triangular shape, preferably 1 μm or less in width, and allowing the metal to react with silicon. | 06-18-2009 |
20090207332 | INTEGRAL-TYPE LIQUID CRYSTAL PANEL WITH IMAGE SENSOR FUNCTION - A display device using a novel semiconductor device, which includes a pixel matrix, an image sensor, and a peripheral circuit for driving those, that is, which has both a camera function and a display function, and is made intelligent, is provided and a method of manufacturing the same is also provided. One pixel includes a semiconductor device for display and a semiconductor for light reception, that is, one pixel includes semiconductor devices (insulated gate-type field effect semiconductor device) for controlling both display and light reception, so that the display device having a picture reading function is made miniaturized and compact. | 08-20-2009 |
20090231527 | Liquid Crystal Display Apparatus Containing Image Sensor and Process for Producing the Same - A liquid crystal display apparatus containing an image sensor, which comprises a liquid crystal display part comprising an active matrix circuit, a peripheral driver circuit for driving the active matrix circuit, and a sensor part, integrated on one substrate, wherein the sensor part is sealed and protected with a sealing part and a counter substrate. | 09-17-2009 |
20100041187 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film. The metal silicide layer may be obtained otherwise by tightly adhering a metal coating to the exposed source and drain regions using an insulator formed into an approximately triangular shape, preferably 1 μm or less in width, and allowing the metal to react with silicon. | 02-18-2010 |
20100044714 | DISPLAY DEVICE - The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode. | 02-25-2010 |
20100081247 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film an a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter. | 04-01-2010 |
20100157188 | LIQUID CRYSTAL DISPLAY PANEL - A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted from spacers in the sealing member is concentrated on the laminated spacer portion, whereby destruction of a thin-film transistor of the peripheral driver circuits can be prevented caused by the pressure from the sealing portion. | 06-24-2010 |
20100321357 | Image Sensor and Image Sensor Integrated Type Active Matrix Type Display Device - To fabricate an active matrix type display device integrated with an image sensor at a low cost and without complicating process, an image sensor laminated with TFT and a light receiving unit is formed on a light receiving matrix, a display matrix is arranged with TFT and pixel electrodes on a matrix and formed with an electrode layer functioning as a black matrix, a lower electrode of the light receiving unit is formed by a starting film the same as that of the black matrix, a terminal for fixing potential of an upper electrode is formed by starting films the same as those of a signal line, the electrode layer or pixel electrodes and the terminals function also as shield electrodes for a side face of the light receiving unit since potential thereof is fixed. | 12-23-2010 |
20110001192 | Method of Fabricating Semiconductor Device - Method of fabricating thin-film transistors in which contact with connecting electrodes becomes reliable. When contact holes are formed, the bottom insulating layer is subjected to a wet etching process, thus producing undercuttings inside the contact holes. In order to remove the undercuttings, a light etching process is carried out to widen the contact holes. Thus, tapering section are obtained, and the covering of connection wiring is improved. | 01-06-2011 |
20110032462 | Liquid Crystal Display Apparatus Containing Image Sensor and Process for Producing the Same - A liquid crystal display apparatus containing an image sensor, which comprises a liquid crystal display part comprising an active matrix circuit, a peripheral driver circuit for driving the active matrix circuit, and a sensor part, integrated on one substrate, wherein the sensor part is sealed and protected with a sealing part and a counter substrate. | 02-10-2011 |
20110100688 | Electro-Optical Device and Method of Manufacturing the Same - In a liquid crystal display device, gate lines and common lines are first concurrently formed, and after an interlayer film is formed, a pixel electrode, common electrodes, and source lines are formed at the same time. By this, a electrode pattern can be made simple and manufacturing steps are simplified. Further, wiring lines and electrode disposed in the layer closest to a liquid crystal layer are made the pixel electrode, common electrodes and source lines, and the shapes thereof are made simple. | 05-05-2011 |
20110121325 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME - There are disclosed TFTs having improved reliability. An interlayer dielectric film forming the TFTs is made of a silicon nitride film. Other interlayer dielectric films are also made of silicon nitride. The stresses inside the silicon nitride films forming these interlayer dielectric films are set between −5×10 | 05-26-2011 |
20110163315 | DISPLAY DEVICE - The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode. | 07-07-2011 |
20110278584 | Liquid Crystal Display Panel - A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted from spacers in the sealing member is concentrated on the laminated spacer portion, whereby destruction of a thin-film transistor of the peripheral driver circuits can be prevented caused by the pressure from the sealing portion. | 11-17-2011 |
20120068266 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor having low leak current and high mobility are obtained in the same time in a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter. | 03-22-2012 |
20120168880 | Method of Fabricating Semiconductor Device - Method of fabricating thin-film transistors in which contact with connecting electrodes becomes reliable. When contact holes are formed, the bottom insulating layer is subjected to a wet etching process, thus producing undercuttings inside the contact holes. In order to remove the undercuttings, a light etching process is carried out to widen the contact holes. Thus, tapering section are obtained, and the covering of connection wiring is improved. | 07-05-2012 |
20120305927 | DISPLAY DEVICE - The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the o electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode. | 12-06-2012 |