Patent application number | Description | Published |
20090279375 | VOLTAGE DOWN CONVERTER FOR HIGH SPEED MEMORY - A voltage down converter (VDC) applicable to high-speed memory devices. The VDC includes a steady driver and active driver along with at least one additional transistor. The steady driver and active driver are coupled by a transistor switch during device start-up to provide fast ramp-up to operating voltage and current. After start-up, the steady driver and active drive function to maintain a steady operating voltage and current. An additional transistor is digitally controlled to drive up operating voltage and current upon issuance of an active command representing read, write, and/or refresh of memory. In this manner, the additional transistor provides fast compensation for fluctuations in operating voltage and current brought on by activity in the memory array. | 11-12-2009 |
20100135092 | CIRCUIT AND METHOD FOR TESTING MULTI-DEVICE SYSTEMS - A method and system for high speed testing of memories in a multi-device system, where individual devices of the multi-device system are arranged in a serial interconnected configuration. High speed testing is achieved by first writing test pattern data to the memory banks of each device of the multi-device system, followed by local test read-out and comparison of the data in each device. Each device generates local result data representing the absence or presence of a failed bit position in the device. Serial test circuitry in each device compares the local result data with global result data from a previous device. The test circuitry compresses this result of this comparison and provides it to the next device as an updated global result data. Hence, the updated global result data will represent the local result data of all the previous devices. | 06-03-2010 |
20100182838 | FLASH MEMORY DEVICE WITH DATA OUTPUT CONTROL - An apparatus, system, and computer-implemented method for controlling data transfer between a plurality of serial data link interfaces and a plurality of memory banks in a semiconductor memory is disclosed. In one example, a flash memory device with multiple links and memory banks, where the links are independent of the banks, is disclosed. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices. In addition, a virtual multiple link configuration is described wherein a single link is used to emulate multiple links. | 07-22-2010 |
20100268874 | METHOD OF CONFIGURING NON-VOLATILE MEMORY FOR A HYBRID DISK DRIVE - A system, method and machine-readable medium are provided to configure a non-volatile memory (NVM) including a plurality of NVM modules, in a system having a hard disk drive (HDD) and an operating system (O/S). In response to a user selection of a hybrid drive mode for the NVM, the plurality of NVM modules are ranked according to speed performance. Boot portions of the O/S are copied to a highly ranked NVM module, or a plurality of highly ranked NVM modules, and the HDD and the highly ranked NVM modules are assigned as a logical hybrid drive of the computer system. Ranking each of the plurality of NVM modules can include carrying out a speed performance test. This approach can provide hybrid disk performance using conventional hardware, or enhance performance of an existing hybrid drive, while taking into account relative performance of available NVM modules. | 10-21-2010 |
20100297812 | METHOD FOR STACKING SERIALLY-CONNECTED INTEGRATED CIRCUITS AND MULTI-CHIP DEVICE MADE FROM SAME - A multi-chip device and method of stacking a plurality substantially identical chips to produce the device are provided. The multi-chip device, or circuit, includes at least one through-chip via providing a parallel connection between signal pads from at least two chips, and at least one through-chip via providing a serial or daisy chain connection between signal pads from at least two chips. Common connection signal pads are arranged symmetrically about a center line of the chip with respect to duplicate common signal pads. Input signal pads are symmetrically disposed about the center line of the chip with respect to corresponding output signal pads. The chips in the stack are alternating flipped versions of the substantially identical chip to provide for this arrangement. At least one serial connection is provided between signal pads of stacked and flipped chips when more than two chips are stacked. | 11-25-2010 |
20100327923 | BRIDGING DEVICE HAVING A FREQUENCY CONFIGURABLE CLOCK DOMAIN - A composite memory device including discrete memory devices and a bridge device for controlling the discrete memory devices. A configurable clock controller receives a system clock and generates a memory clock having a frequency that is a predetermined ratio of the system clock. The system clock frequency is dynamically variable between a maximum and a minimum value, and the ratio of the memory clock frequency relative to the system clock frequency is set by loading a frequency register with a Frequency Divide Ratio (FDR) code any time during operation of the composite memory device. In response to the FDR code, the configurable clock controller changes the memory clock frequency. | 12-30-2010 |
20110002171 | MEMORY WITH OUTPUT CONTROL - An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one example, a flash memory device may have multiple serial data links, multiple memory banks and control input ports that enable the memory device to transfer the serial data to a serial data output port of the memory device. In another example, a flash memory device may have a single serial data link, a single memory bank, a serial data input port, a control input port for receiving output enable signals. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices. | 01-06-2011 |
20110016236 | APPARATUS AND METHOD FOR PRODUCING IDENTIFIERS REGARDLESS OF MIXED DEVICE TYPE IN A SERIAL INTERCONNECTION - A plurality of memory devices of mixed type (e.g., DRAMs, SRAMs, MRAMs, and NAND-, NOR- and AND-type Flash memories) is serially interconnected. Each device has device type information on its device type. A specific device type (DT) and a device identifier (ID) contained in a serial input (SI) as a packet are fed to one device of the serial interconnection. The device determines whether the fed DT matches the DT of the device. In a case of match, a calculator included in the device performs calculation to generate an ID accompanying the fed DT for another device and the fed ID is latched in a register of the device. In a case of no match, the ID generation is skipped and no ID is generated for another device. The DT is combined with the generated or the received ID depending on the device type match determination. The combined DT and ID is as a packet transferred to a next device. Such a device type match determination and ID generation or skip are performed in all devices of the serial interconnection. With reference to device type provided to the interconnected devices, IDs are sequentially generated. The SI containing the DT, the ID and an ID generation command is transmitted in a packet basis to a next device. A memory controller can recognize the total number of one DT, in response to the ID received from the last device. In a case of a “don't care” DT is provided to the interconnected devices, IDs are sequentially generated and the total number of the interconnected devices is recognized, regardless of the differences in DTs of the devices. | 01-20-2011 |
20110131445 | Apparatus and Method of PAGE Program Operation for Memory Devices with Mirror Back-Up of Data - An apparatus and method of page program operation is provided. When performing a page program operation with a selected memory device, a memory controller loads the data into the page buffer of one selected memory device and also into the page buffer of another selected memory device in order to store a back-up copy of the data. In the event that the data is not successfully programmed into the memory cells of the one selected memory device, then the memory controller recovers the data from the page buffer of the other memory device. Since a copy of the data is stored in the page buffer of the other memory device, the memory controller does not need to locally store the data in its data storage elements. | 06-02-2011 |
20110153974 | SYSTEM AND METHOD OF OPERATING MEMORY DEVICES OF MIXED TYPE - A memory system architecture is provided in which a memory controller controls memory devices in a serial interconnection configuration. The memory controller has an output port for sending memory commands and an input port for receiving memory responses for those memory commands requisitioning such responses. Each memory device includes a memory, such as, for example, NAND-type flash memory, NOR-type flash memory, random access memory and static random access memory. Each memory command is specific to the memory type of a target memory device. A data path for the memory commands and the memory responses is provided by the interconnection. A given memory command traverses memory devices in order to reach its intended memory device of the serial interconnection configuration. Upon its receipt, the intended memory device executes the given memory command and, if appropriate, sends a memory response to a next memory device. The memory response is transferred to the memory controller. | 06-23-2011 |
20110154137 | DATA CHANNEL TEST APPARATUS AND METHOD THEREOF - A system includes a plurality of devices that are connected in series and a controller that communicates with the devices. Each of the devices has a plurality of input ports and corresponding output ports. The outputs of one device and the inputs of a next device are interconnected. The controller is coupled to the first device and the last device of the series-connection. The controller applies a test pattern to the plurality of input ports at the first device connected in series, by the controller. Each data channel defines a data path between corresponding pairs of input and output ports of the first and last devices. A data channel is enabled if the test pattern is detected at its corresponding output port. | 06-23-2011 |
20110163423 | METHOD FOR STACKING SERIALLY-CONNECTED INTEGRATED CIRCUITS AND MULTI-CHIP DEVICE MADE FROM SAME - A multi-chip device and method of stacking a plurality substantially identical chips to produce the device are provided. The multi-chip device, or circuit, includes at least one through-chip via providing a parallel connection between signal pads from at least two chips, and at least one through-chip via providing a serial or daisy chain connection between signal pads from at least two chips. Common connection signal pads are arranged symmetrically about a center line of the chip with respect to duplicate common signal pads. Input signal pads are symmetrically disposed about the center line of the chip with respect to corresponding output signal pads. The chips in the stack are alternating flipped versions of the substantially identical chip to provide for this arrangement. At least one serial connection is provided between signal pads of stacked and flipped chips when more than two chips are stacked. | 07-07-2011 |
20110185086 | APPARATUS AND METHOD FOR PRODUCING DEVICE IDENTIFIERS FOR SERIALLY INTERCONNECTED DEVICES OF MIXED TYPE - A plurality of memory devices of mixed type (e.g., DRAMs, SRAMs, MRAMs and NAND-, NOR- and AND-type Flash memories) are serially interconnected. Each device has device type information on its device type. A specific device type (DT) and a device identifier (ID) contained in a serial input (SI) are fed to one device of the serial interconnection. The device determines whether the fed DT matches the DT of the device. In a case of match, a calculator included in the device performs calculation to generate an ID for another device and the fed ID is latched in a register of the device. The generated ID is transferred to another device of the serial interconnection. In a case of no match, the ID generation is skipped and no ID is generated for another device. Such a device type match determination and ID generation or skip are performed in all devices of the serial interconnection. In cases of different device types being separately provided to the interconnected devices, sequential IDs are generated in each of the different device types and also the total number of each device type are recognized. In a case of a “don't care” code is provided to the interconnected devices, sequential IDs are generated and also, the total number of the interconnected devices is recognized, regardless of the type differences. | 07-28-2011 |
20110194351 | SOURCE SIDE ASYMMETRICAL PRECHARGE PROGRAMMING SCHEME - A method for programming NAND flash cells to minimize program stress while allowing for random page programming operations. The method includes asymmetrically precharging a NAND string from a positively biased source line while the bitline is decoupled from the NAND string, followed by the application of a programming voltage to the selected memory cell, and then followed by the application of bitline data. After asymmetrical precharging and application of the programming voltage, all the selected memory cells will be set to a program inhibit state as they will be decoupled from the other memory cells in their respective NAND strings, and their channels will be locally boosted to a voltage effective for inhibiting programming. A VSS biased bitline will discharge the locally boosted channel to VSS, thereby allowing programming of the selected memory cell to occur. A VDD biased bitline will have no effect on the precharged NAND string, thereby maintaining a program inhibited state of that selected memory cell. | 08-11-2011 |
20110194365 | BRIDGE DEVICE ARCHITECTURE FOR CONNECTING DISCRETE MEMORY DEVICES TO A SYSTEM - Bridge device architecture for connecting discrete memory devices is disclosed. A bridge device is used in conjunction with a composite memory device including at least one discrete memory device. The bridge device comprises a local control interface connected to the at least one discrete memory device, a local input/output interface connected to the at least one discrete memory device, and a global input/output interface interposed between the local control interface and the local input/output interface. The global input/output interface receives and provides global memory control signals and also receives and provides write data to and read data from the at least one discrete memory device. | 08-11-2011 |
20110255339 | METHOD AND SYSTEM FOR ACCESSING A FLASH MEMORY DEVICE - An apparatus, system, and computer-implemented method for controlling data transfer between a plurality of serial data link interfaces and a plurality of memory banks in a semiconductor memory is disclosed. In one example, a flash memory device with multiple links and memory banks, where the links are independent of the banks, is disclosed. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices. In addition, a virtual multiple link configuration is described wherein a single link is used to emulate multiple links. | 10-20-2011 |
20110258366 | STATUS INDICATION IN A SYSTEM HAVING A PLURALITY OF MEMORY DEVICES - Status indication in a system having a plurality of memory devices is disclosed. A memory device in the system includes a plurality of data pins for connection to a data bus. The memory device also includes a status pin for connection to a status line that is independent from the data bus. The memory device also includes first circuitry for generating, upon completion of a memory operation having a first duration, a strobe pulse of a second duration much shorter than the first duration. The strobe pulse provides an indication of the completion of the memory operation. The memory device also includes second circuitry for outputting the strobe pulse onto the status line via the status pin. | 10-20-2011 |
20110261613 | PHASE CHANGE MEMORY ARRAY BLOCKS WITH ALTERNATE SELECTION - A phase change memory is disclosed. The phase change memory has a plurality of block units. The block units are alternately selected. The alternate block unit selection suppresses peak current ground bouncing on sub-wordline and connected ground line through sub-wordline driver transistor. An alternate bitline selection avoids adjacent cell heating interference in the selected block unit. | 10-27-2011 |
20120020168 | POWER SUPPLIES IN FLASH MEMORY DEVICES AND SYSTEMS - Power supplies in flash memory devices are disclosed. A first section of a flash memory device includes non-volatile memory for storing data. A second section of the flash memory device includes at least first and second pumping circuits. The first pumping circuit receives a first voltage and produces, at an output of the first pumping circuit, a second voltage at a second voltage level that is higher than the first voltage level. The second pumping circuit has an input coupled to the first pumping circuit output for cooperatively employing the first pumping circuit to pump up from a voltage greater than the first voltage to produce a third voltage at a third voltage level that is higher than the second voltage level. | 01-26-2012 |
20120023286 | APPARATUS AND METHOD OF PAGE PROGRAM OPERATION FOR MEMORY DEVICES WITH MIRROR BACK-UP OF DATA - An apparatus and method of page program operation is provided. When performing a page program operation with a selected memory device, a memory controller loads the data into the page buffer of one selected memory device and also into the page buffer of another selected memory device in order to store a back-up copy of the data. In the event that the data is not successfully programmed into the memory cells of the one selected memory device, then the memory controller recovers the data from the page buffer of the other memory device. Since a copy of the data is stored in the page buffer of the other memory device, the memory controller does not need to locally store the data in its data storage elements. | 01-26-2012 |
20120069693 | DYNAMIC RANDOM ACCESS MEMORY AND BOOSTED VOLTAGE PRODUCER THEREFOR - A dynamic random access memory (DRAM) is selectively operable in a sleep mode and another mode. The DRAM has data storage cells that are refreshed in the refresh mode. A boosted voltage is provided for the operation of the DRAM. A boosted voltage provider includes a group of charge pump circuits that are selectively activated by a pump control circuit based on a refresh time for refreshing data in the DRAM cells in the sleep mode. | 03-22-2012 |
20120134194 | BRIDGE DEVICE ARCHITECTURE FOR CONNECTING DISCRETE MEMORY DEVICES TO A SYSTEM - A bridge device architecture for connecting discrete memory devices. The bridge device is used in conjunction with a composite memory device including at least one discrete memory device. The bridge device includes a local control interface for connecting to the at least one discrete memory device, a local input/output interface for connecting to the at least one discrete memory device, and a global input/output interface. The global input/output interface receives and provides global memory control signals and also receives and provides write data to and read data from the at least one discrete memory device. | 05-31-2012 |
20120170395 | Data Flow Control in Multiple Independent Port - A system includes a memory controller and a plurality of memory devices connected in-series that communicate with the memory controller. Each of the memory devices has multiple independent serial ports for receiving and transmitting data. The memory controller a device address (DA) or ID number for designating a device that executes a command. Data contained in the command sent by the memory controller is captured by an individual link control circuit, in response to internally generated clock with appropriate latencies. The captured data is written into a corresponding memory bank. The data stored in one of a plurality of memory banks of one memory device is read in accordance with the addresses issued by the memory controller. The read data is propagated from the memory device through the series-connected memory devices to the memory controller. | 07-05-2012 |
20120176118 | VOLTAGE DOWN CONVERTER FOR HIGH SPEED MEMORY - A voltage down converter (VDC) applicable to high-speed memory devices. The VDC includes a steady driver and active driver along with at least one additional transistor. The steady driver and active driver are coupled by a transistor switch during device start-up to provide fast ramp-up to operating voltage and current. After start-up, the steady driver and active drive function to maintain a steady operating voltage and current. An additional transistor is digitally controlled to drive up operating voltage and current upon issuance of an active command representing read, write, and/or refresh of memory. In this manner, the additional transistor provides fast compensation for fluctuations in operating voltage and current brought on by activity in the memory array. | 07-12-2012 |
20120215974 | MEMORY WITH OUTPUT CONTROL - An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one example, a flash memory device may have multiple serial data links, multiple memory banks and control input ports that enable the memory device to transfer the serial data to a serial data output port of the memory device. In another example, a flash memory device may have a single serial data link, a single memory bank, a serial data input port, a control input port for receiving output enable signals. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices. | 08-23-2012 |
20120262986 | SOURCE SIDE ASYMMETRICAL PRECHARGE PROGRAMMING SCHEME - A method for programming NAND flash cells to minimize program stress while allowing for random page programming operations. The method includes asymmetrically precharging a NAND string from a positively biased source line while the bitline is decoupled from the NAND string, followed by the application of a programming voltage to the selected memory cell, and then followed by the application of bitline data. After asymmetrical precharging and application of the programming voltage, all the selected memory cells will be set to a program inhibit state as they will be decoupled from the other memory cells in their respective NAND strings, and their channels will be locally boosted to a voltage effective for inhibiting programming. A VSS biased bitline will discharge the locally boosted channel to VSS, thereby allowing programming of the selected memory cell to occur. | 10-18-2012 |
20120320674 | MULTI-LEVEL CELL ACCESS BUFFER WITH DUAL FUNCTION - An access buffer, such as page buffer, for writing to non-volatile memory, such as Flash, using a two-stage MLC (multi-level cell) operation is provided. The access buffer has a first latch for temporarily storing the data to be written. A second latch is provided for reading data from the memory as part of the two-stage write operation. The second latch has an inverter that participates in the latching function when reading from the memory. The same inverter is used to produce a complement of an input signal being written to the first latch with the result that a double ended input is used to write to the first latch. | 12-20-2012 |
20130021844 | PHASE CHANGE MEMORY WITH DOUBLE WRITE DRIVERS - A Phase Change Memory (PCM) having double write drivers. A PCM apparatus includes a memory array having a bitline with a first end and a second end for accessing a PCM cell coupled to the bitline between the first end and the second end of the bitline, a first write driver and a second write driver coupled to the first end of the bitline and the second end of the bitline respectively for simultaneously supplying current to the PCM cell when writing to the PCM cell, and a sense amplifier coupled to the second end of the bitline for sensing a resistance of the PCM cell when reading from the PCM cell. Embodiments of the present invention provide apparatuses, methods, and systems having reduced writing current requirements. | 01-24-2013 |
20130042024 | APPARATUS AND METHOD FOR PRODUCING IDS FOR INTERCONNECTED DEVICES OF MIXED TYPE - A plurality of memory devices of mixed type (e.g., DRAMs, SRAMs, MRAMs and NAND-, NOR- and AND-type Flash memories) having associated device type information is serially interconnected. A serial input (SI) containing a device type (DT) and a device identifier (ID) is fed to one device of the serial interconnection. Upon a match between the fed DT matches the DT of the device, the fed ID is latched in a register of the device and an ID for another device is generated, which is then transferred to the next device in the serial interconnection. Otherwise, ID generation is skipped. These steps are performed in all devices. Thus, sequential IDs are generated for the different device types and also the total number of each device type is recognized. If the fed DT is “don't care”, sequential IDs are generated for all devices and the total number of the devices is recognized. | 02-14-2013 |
20130046921 | METHOD OF CONFIGURING NON-VOLATILE MEMORY FOR A HYBRID DISK DRIVE - A system, method and machine-readable medium are provided to configure a non-volatile memory (NVM) including a plurality of NVM modules, in a system having a hard disk drive (HDD) and an operating system (O/S). In response to a user selection of a hybrid drive mode for the NVM, the plurality of NVM modules are ranked according to speed performance. Boot portions of the O/S are copied to a highly ranked NVM module, or a plurality of highly ranked NVM modules, and the HDD and the highly ranked NVM modules are assigned as a logical hybrid drive of the computer system. Ranking each of the plurality of NVM modules can include carrying out a speed performance test. This approach can provide hybrid disk performance using conventional hardware, or enhance performance of an existing hybrid drive, while taking into account relative performance of available NVM modules. | 02-21-2013 |
20130068509 | METHOD AND APPARATUS FOR CONNECTING INLAID CHIP INTO PRINTED CIRCUIT BOARD - A method and apparatus for mounting microchips | 03-21-2013 |
20130070540 | VOLTAGE REGULATION FOR 3D PACKAGES AND METHOD OF MANUFACTURING SAME - Disclosed herein are structures and related processes for effectively regulating power among slave chips in a 3D memory multichip package that employs TSVs for interlevel chip connections. The disclosed techniques employ individual voltage regulators on one or more of the slave chips for accurate level control of internal voltages, for example, word line driver voltage (VPP), back bias voltage (VBB), data line voltage (VDL), and bit line pre-charge voltage/cell plate voltage (VBLP/VPL). Employing regulators on one or more of the slave chips not only allows for precise regulation of power levels during typical memory stack operation, but also provides tolerance in small variations in power levels caused, for example, by manufacturing process variations. Moreover, less chip real estate is used as compared to techniques that provide complete power generators on each chip of a multichip stack. | 03-21-2013 |
20130073754 | APPARATUS AND METHOD FOR ESTABLISHING DEVICE IDENTIFIERS FOR SERIALLY INTERCONNECTED DEVICES - A method or apparatus operates a multitude of devices in a serial interconnection configuration to establish a device identifier (ID) for each device. An input signal is transmitted through a serial interconnection to a first device using inputs that are also used by the first device to input other information thereto (e.g., data, commands, control signals). A generating circuit generates a device ID in response to the input signal. A transfer circuit then transfers an output signal associated with the device ID to a second device through a serial output of the first device. The serial output is also used by the first device to output other information (e.g., signals, data) to another device in the serial interconnection configuration. | 03-21-2013 |
20130141858 | CPU WITH STACKED MEMORY - A multi-chip package has a substrate with electrical contacts for connection to an external device. A CPU die is disposed on the substrate and is in communication with the substrate. The CPU die has a plurality of processor cores occupying a first area of the CPU die, and an SRAM cache occupying a second area of the CPU die. A DRAM cache is disposed on the CPU die and is in communication with the CPU die. The DRAM cache has a plurality of stacked DRAM die. The plurality of stacked DRAM dies are substantially aligned with the second area of the CPU die, and substantially do not overlap the first area of the CPU die. A multi-chip package having a DRAM cache disposed on the substrate and a CPU die disposed on the DRAM cache is also disclosed. | 06-06-2013 |
20130188422 | METHOD AND SYSTEM FOR ACCESSING A FLASH MEMORY DEVICE - An apparatus, system, and computer-implemented method for controlling data transfer between a plurality of serial data link interfaces and a plurality of memory banks in a semiconductor memory is disclosed. In one example, a flash memory device with multiple links and memory banks, where the links are independent of the banks, is disclosed. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices. In addition, a virtual multiple link configuration is described wherein a single link is used to emulate multiple links. | 07-25-2013 |
20130229874 | MEMORY WITH OUTPUT CONTROL - An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one example, a flash memory device may have multiple serial data links, multiple memory banks and control input ports that enable the memory device to transfer the serial data to a serial data output port of the memory device. In another example, a flash memory device may have a single serial data link, a single memory bank, a serial data input port, a control input port for receiving output enable signals. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices. | 09-05-2013 |
20130243137 | MEMORY CONTROLLER WITH FLEXIBLE DATA ALIGNMENT TO CLOCK - A system includes a memory controller and a plurality of memory devices that are connected in-series to the memory controller. The system operation is synchronous with clock that is provided in a fashion of source synchronous clock structure. The source synchronous clock structure includes a PLL (Phase-Locked Loop) that reshapes an incoming clock and a reshaped clock is provided. The PLL provides a shifted clock in phase of 90°. The phase-shifted clock and data are transmitted from the first device to the second device. Clock phase shift provides a center-edge clock with data to be transmitted. The devices are assigned with unique IDs. The least significant bit of the ID number of the last device is used for determination of clock alignment: edge- or center-aligned clock with data produced by the memory controller. | 09-19-2013 |
20130318287 | BRIDGING DEVICE HAVING A FREQUENCY CONFIGURABLE CLOCK DOMAIN - A composite memory device including discrete memory devices and a bridge device for controlling the discrete memory devices. A configurable clock controller receives a system clock and generates a memory clock having a frequency that is a predetermined ratio of the system clock. The system clock frequency is dynamically variable between a maximum and a minimum value, and the ratio of the memory clock frequency relative to the system clock frequency is set by loading a frequency register with a Frequency Divide Ratio (FDR) code any time during operation of the composite memory device. In response to the FDR code, the configurable clock controller changes the memory clock frequency. | 11-28-2013 |
20130336055 | PHASE CHANGE MEMORY WORD LINE DRIVER - A method for improving sub-word line response comprises generating a variable substrate bias determined by at least one user parameter. The variable substrate bias is applied to a sub-word line driver in a selected sub-block of a memory. A voltage disturbance on a sub-word line in communication with the sub-word line driver is minimized by modifying a variable substrate bias of the sub-word line driver to change a transconductance of the sub-word line driver thereby. | 12-19-2013 |
20130343142 | DYNAMIC RANDOM ACCESS MEMORY AND BOOSTED VOLTAGE PRODUCER THEREFOR - A dynamic random access memory (DRAM) is selectively operable in a sleep mode and another mode. The DRAM has data storage cells that are refreshed in the refresh mode. A boosted voltage is provided for the operation of the DRAM. A boosted voltage provider includes a group of charge pump circuits that are selectively activated by a pump control circuit based on a refresh time for refreshing data in the DRAM cells in the sleep mode. | 12-26-2013 |
20140019705 | BRIDGING DEVICE HAVING A CONFIGURABLE VIRTUAL PAGE SIZE - A composite memory device including discrete memory devices and a bridge device for controlling the discrete memory devices. The bridge device has memory organized as banks, where each bank is configured to have a virtual page size that is less than the maximum physical size of the page buffer. Therefore only a segment of data corresponding to the virtual page size stored in the page buffer is transferred to the bank. The virtual page size of the banks is provided in a virtual page size (VPS) configuration command having an ordered structure where the position of VPS data fields containing VPS configuration codes in the command correspond to different banks which are ordered from a least significant bank to a most significant bank. The VPS configuration command is variable in size, and includes only the VPS configuration codes for the highest significant bank being configured and the lower significant banks. | 01-16-2014 |
20140071781 | VOLTAGE DOWN CONVERTER FOR HIGH SPEED MEMORY - A voltage down converter (VDC) applicable to high-speed memory devices. The VDC includes a steady driver and active driver along with at least one additional transistor. The steady driver and active driver are coupled by a transistor switch during device start-up to provide fast ramp-up to operating voltage and current. After start-up, the steady driver and active drive function to maintain a steady operating voltage and current. An additional transistor is digitally controlled to drive up operating voltage and current upon issuance of an active command representing read, write, and/or refresh of memory. In this manner, the additional transistor provides fast compensation for fluctuations in operating voltage and current brought on by activity in the memory array. | 03-13-2014 |
20140132318 | PLL LOCKING CONTROL IN DAISY CHAINED MEMORY SYSTEM - A method, system and apparatus to provide a solution of PLL locking issue in the daisy chained memory system. A first embodiment uses consecutive PLL on based on locking status of backward device on the daisy chained memory system with no requirement of PLL locking status checking pin. A second embodiment uses Flow through PLL control with a locking status pin either using an existing pin or a separated pin. A third embodiment uses a relocking control mechanism to detect PLL relocking from the device. A fourth variation uses flag signal generation to send to the controller. | 05-15-2014 |
20140133242 | MEMORY WITH OUTPUT CONTROL - An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one example, a flash memory device may have multiple serial data links, multiple memory banks and control input ports that enable the memory device to transfer the serial data to a serial data output port of the memory device. In another example, a flash memory device may have a single serial data link, a single memory bank, a serial data input port, a control input port for receiving output enable signals. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices. | 05-15-2014 |
20140321226 | DYNAMIC RANDOM ACCESS MEMORY AND BOOSTED VOLTAGE PRODUCER THEREFOR - A dynamic random access memory (DRAM) is selectively operable in a sleep mode and another mode. The DRAM has data storage cells that are refreshed in the refresh mode. A boosted voltage is provided for the operation of the DRAM. A boosted voltage provider includes a group of charge pump circuits that are selectively activated by a pump control circuit based on a refresh time for refreshing data in the DRAM cells in the sleep mode. | 10-30-2014 |
20140325178 | SYSTEM HAVING ONE OR MORE MEMORY DEVICES - A system having serially connected memory devices in a ring topology organization to realize high speed performance. The memory devices have dynamically configurable data widths such that the system can operate with up to a maximum common number of active data pads to maximize performance, or to operate with a single active data pad to minimize power consumption. Therefore the system can include a mix of memory devices having different data widths. The memory devices are dynamically configurable through the issuance of a single command propagated serially through all the memory devices from the memory controller in a broadcast operation. Robust operation of the system is ensured by implementing a data output inhibit algorithm, which prevents valid data from being provided to the memory controller when read output control signal is received out of its proper sequence. | 10-30-2014 |
20150049543 | PHASE CHANGE MEMORY WORD LINE DRIVER - A method for improving sub-word line response comprises generating a variable substrate bias determined by at least one user parameter. The variable substrate bias is applied to a sub-word line driver in a selected sub-block of a memory. A voltage disturbance on a sub-word line in communication with the sub-word line driver is minimized by modifying a variable substrate bias of the sub-word line driver to change a transconductance of the sub-word line driver thereby. | 02-19-2015 |
20150082072 | MEMORY CONTROLLER WITH FLEXIBLE DATA ALIGNMENT TO CLOCK - A system includes a memory controller and a plurality of memory devices that are connected in-series to the memory controller. The system operation is synchronous with clock that is provided in a fashion of source synchronous clock structure. The source synchronous clock structure includes a PLL (Phase-Locked Loop) that reshapes an incoming clock and a reshaped clock is provided. The PLL provides a shifted clock in phase of 90°. The phase-shifted clock and data are transmitted from the first device to the second device. Clock phase shift provides a center-edge clock with data to be transmitted. The devices are assigned with unique IDs. The least significant bit of the ID number of the last device is used for determination of clock alignment: edge- or center-aligned clock with data produced by the memory controller. | 03-19-2015 |