Patent application number | Description | Published |
20080199818 | Vertical heat processing apparatus and heat processing method using the vertical heat processing apparatus - The present invention is a vertical heat processing apparatus comprising: a heat processing furnace having a furnace opening; a lid member for closing the furnace opening of the heat processing furnace; a first substrate holder and a second substrate holder, each of which is capable of holding a plurality of substrates in a tier-like manner and of being alternately placed on the lid member through a heat retention tube; an elevating mechanism that vertically moves the lid member to load one of the substrate holders into the heat processing furnace, and to unload the one of the substrate holders from the heat processing furnace; a holder table configured to be placed thereon the other of the substrate holders for transfer of the substrates, when the one of the substrate holders is in the heat processing furnace; and a holder conveying mechanism configured to convey the respective substrate holders between the holder table and the heat retention tube; wherein the holder table is provided with a holder gripping mechanism for gripping the substrate holder to prevent turnover thereof. | 08-21-2008 |
20090092940 | Processing system for process object and thermal processing method for process object - To provide a processing system for a process object capable of preventing a transport arm mechanism from being thermally damaged, so as to effectively perform a transport operation of the process object. A processing system | 04-09-2009 |
20090101472 | Workpiece transfer mechanism, workpiece transfer method and workpiece processing system - A workpiece transfer mechanism | 04-23-2009 |
20100098517 | PROCESSING APPARATUS AND PROCESSING METHOD - A processing apparatus including: a carry-in area into which a container containing substrates to be processed is carried, the container having a flange part on an upper part thereof and an opening in a front surface thereof, with a lid being detachably fixed to the opening; a transfer area whose atmosphere is maintained differently from an atmosphere of the carry-in area; a partition wall separating the carry-in area and transfer area; a through-hole formed in the partition wall; a door configured to open and close the through-hole; and a table on which the container can be placed in the carry-in area. After the container has been placed and then held on the table, the container is brought into contact with the through-hole, the door and the lid are opened, and the substrates to be processed in the container are conveyed to the transfer area so as to process the substrates. | 04-22-2010 |
20120315114 | SUBSTRATE CONVEYING CONTAINER OPENING/CLOSING DEVICE, LID OPENING/CLOSING DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS - A substrate conveying container opening/closing device includes an elevator carriage provided in a substrate transfer area and configured to be moved up and down by an elevator mechanism, a cover member for opening and closing an opening of a wall, a seal member for sealing a gap between the cover member and the periphery of the opening, a lid detaching/attaching mechanism provided in the cover member and configured to detach and attach the lid, a guide unit provided in the elevator carriage and configured to guide the cover member upward so that the cover member can advance from a retracting position toward the wall, a guideway provided in the wall to extend in a direction perpendicular to a seal surface of the opening, and a rotating body provided in the cover member and configured to roll downward along the guideway as the elevator carriage is moved downward. | 12-13-2012 |
Patent application number | Description | Published |
20120094011 | FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD - A film deposition apparatus includes a partitioning member that forms, in a chamber, a film deposition space including a turntable on which a substrate is placed, a first reactive gas supplying portion for supplying a first reactive gas toward the turntable, and a second reactive gas supplying portion for supplying a second reactive gas toward the turntable. The partitioning member is fabricated with material superior to material forming the chamber in corrosion resistance. The film deposition apparatus includes a pressure measurement portion that measures a pressure of the film deposition space, and a pressure measurement portion that measures a pressure of a space outside the film deposition space, so that the pressure of the space outside the film deposition space is kept slightly higher than the pressure of the film deposition space based on the pressure measurements. | 04-19-2012 |
20130042813 | FILM DEPOSITION APPARATUS - A film deposition apparatus includes a turntable including plural substrate placing areas in the circumferential direction; a gas nozzle provided to extend from an inner edge to an outer edge of the substrate placing area; a gas evacuation port provided outside of an outer edge of the turntable and downstream in a rotational direction of the turntable with respect to the gas nozzle for evacuating the gas; and a regulation member including a wall portion provided between the gas nozzle and the gas evacuation port for isolating the gas nozzle and the gas evacuation port at least at a part between the inner edge to the outer edge of the substrate placing area while having a space extending from the inner edge to the outer edge of the substrate placing area when a substrate is placed on the substrate placing area. | 02-21-2013 |
20130059415 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD AND STORAGE MEDIUM - A film deposition apparatus includes a turntable having a substrate mounting area, a first plasma gas supplying part, a second plasma supplying part, a first plasma gas generating part to convert the first plasma generating gas to first plasma, and a second plasma generating part provided away from the first plasma generating part in a circumferential direction and to convert the second plasma generating gas to second plasma. The first plasma generating part includes an antenna facing the turntable so as to convert the first plasma generating gas to the first plasma, and a grounded Faraday shield between the antenna and an area where a plasma process is performed, and to include plural slits respectively extending in directions perpendicular to the antenna and arranged along an antenna extending direction to prevent an electric field from passing toward the substrate and to pass a magnetic field toward the substrate. | 03-07-2013 |
20130149467 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE RECORDING MEDIUM - A film deposition apparatus includes a vacuum chamber into which first and second gases are sequentially supplied for a plural times, a rotation table including a first surface having a receiving area and rotating the receiving area inside the vacuum chamber, a first part supplying the first gas to a first region, a second part supplying the second gas to a second region separated from the first region in a peripheral direction of the rotation table via a separation region, a plasma gas part supplying a plasma generation gas into a plasma region inside the vacuum chamber, an antenna facing the first surface of the rotation table and generating plasma from the plasma generation gas inside a plasma space by inductive coupling, and a faraday shield being grounded and provided between the antenna and the plasma space and including slits aligned in a direction perpendicularly intersecting the antenna. | 06-13-2013 |
20130276705 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a vacuum chamber; a turntable rotatably provided in the vacuum chamber, on which a circular substrate is to be mounted, and provided with a circular concave portion at a front surface having a larger diameter than that of the substrate, and a circular substrate mounting portion provided in the concave portion having a diameter smaller than that of the concave portion and the substrate at a position higher than a bottom portion of the concave portion, the center of the substrate mounting portion being off center with respect to the center of the concave portion toward an outer peripheral portion side of the turntable; a process gas supplying unit which supplies a process gas to the substrate; and a vacuum evacuation mechanism which evacuates the vacuum chamber. | 10-24-2013 |
Patent application number | Description | Published |
20110300719 | FILM FORMATION METHOD AND FILM FORMATION APPARATUS - When an object to be processed is transferred into a process chamber capable of keeping a vacuum and an interior of the process chamber is kept in a vacuum state, the film formation method includes performing forming a first ZrO film on the object to be processed by supplying a zirconium material and an oxidizing agent in the order listed above into the process chamber and forming a second ZrO film doped with Si on the object to be processed by supplying the zirconium material, a silicon material, and the oxidizing agent in the order listed above into the process chamber, in such a way that a number of times the forming the first ZrO film is performed and a number of times the forming the second ZrO film is performed are adjusted, respectively, to form a zirconia-based film having a predetermined film thickness while controlling a Si concentration in the film. | 12-08-2011 |
20120067846 | Liquid Processing Method, Recording Medium Having Recorded Program for Executing Liquid Processing Method Therein and Liquid Processing Apparatus - Disclosed is a method for processing a substrate including a first process and a second process. The first process comprises supporting the substrate formed with a titanium-containing film on its front surface and rear surface by a support unit which is rotatably installed; rotating the substrate along with the support unit; and supplying a first processing liquid containing hydrofluoric acid to the rear surface of the substrate thereby processing the rear surface of the substrate with the first processing liquid. The second process comprises supplying a second processing liquid containing ammonia hydrogen peroxide mixture to the rear surface of the substrate after the first process is completed, thereby processing the rear surface of the substrate with the second processing liquid. | 03-22-2012 |
20120077322 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND ADSORPTION SITE BLOCKING ATOMIC LAYER DEPOSITION METHOD - To provide a dielectric film having good crystallinity while suppressing an influence of the size effects and preventing the dielectric film from being divided by an Al-doped layer although there is provided the Al-doped layer for improving the leakage characteristics in the dielectric film of a capacitor, the dielectric film has at least one Al-doped layer, and an area density of Al atoms in one layer of the Al-doped layer is smaller than 1.4E+14′ atoms/cm | 03-29-2012 |
20120219710 | METHOD OF FORMING TITANIUM NITRIDE FILM, APPARATUS FOR FORMING TITANIUM NITRIDE FILM, AND PROGRAM - According to the method of forming a titanium nitride film, first, an inside of a reaction pipe accommodating a semiconductor wafer is heated up to 200° C. to 350° C. by using a temperature increasing heater. Then, the titanium nitride film is formed on the semiconductor wafer by supplying a film forming gas including a titanium raw material into the reaction pipe. Methylcyclopentadienyl tris(dimethylamino)titanium that does not include a chlorine atom and includes titanium is used as the titanium raw material. | 08-30-2012 |
20120244721 | FILM FORMING METHOD, FILM FORMING APPARATUS, AND STORAGE MEDIUM - A method of forming a dielectric film including a zirconium oxide film includes: forming a zirconium oxide film on a substrate to be processed by supplying a zirconium material and an oxidant, the zirconium material including a Zr compound which includes a cyclopentadienyl ring in a structure, and forming a titanium oxide film on the zirconium oxide film by supplying a titanium material and an oxidant, the titanium material including a Ti compound which includes a cyclopentadienyl ring in a structure. | 09-27-2012 |
20120309163 | METHOD OF FORMING TITANIUM OXIDE FILM HAVING RUTILE CRYSTALLINE STRUCTURE - The invention provides a method of forming a titanium oxide film having a rutile crystalline structure that has high permittivity. The titanium oxide film having a rutile crystalline structure is produced by forming an amorphous titanium oxide film on an amorphous zirconium oxide film using methyl cyclopentadienyl tris(dimethylamino)titanium as a titanium precursor by an ALD method, and crystallizing the amorphous titanium oxide film by annealing at a temperature of 300° C. or higher. | 12-06-2012 |
20130200491 | METHOD OF MANUFACTURING CAPACITOR, CAPACITOR AND METHOD OF FORMING DIELECTRIC FILM FOR USE IN CAPACITOR - Provided are a method of manufacturing a capacitor capable of achieving a high dielectric constant property and a low leakage current, a capacitor, and a method of forming a dielectric film used in the capacitor. The capacitor is fabricated by forming a lower electrode layer on a substrate; forming a first TiO | 08-08-2013 |
20140295082 | DRIVING METHOD OF VERTICAL HEAT TREATMENT APPARATUS, STORAGE MEDIUM AND VERTICAL HEAT TREATMENT APPARATUS - A driving method of a vertical heat treatment apparatus having a vertical reaction container with a heating part installed includes: performing a process of loading wafers by a substrate holder support to the reaction container; performing a film forming process of storing a first gas at a storage unit and pressurizing the first gas, and alternatively performing a step of supplying the first gas to the vacuum atmosphere reaction container and a step of supplying the second gas to the reaction container; subsequently performing a purge process of unloading the substrate holder support and supplying a purge gas into the reaction container to forcibly peel off a thin film attached to the reaction container; and while the purge process is performed, performing a process of repeating storing the purge gas at the storage unit, pressurizing the gas and discharging the gas into the reaction container. | 10-02-2014 |
20150259796 | FILM FORMING METHOD, FILM FORMING APPARATUS AND STORAGE MEDIUM - A method of forming a thin film containing a doping element in a vacuum atmosphere, which includes: supplying a source gas into a processing vessel being under the vacuum atmosphere through a source gas supply unit such that a source of the source gas is adsorbed onto a substrate in the processing vessel; repeating, a plurality of times, a sequence of operations of supplying a doping gas containing the doping element into the processing vessel through a doping gas supply unit, followed by sealing the doping gas inside the processing vessel, followed by vacuum-exhausting the processing vessel; supplying a reaction gas into the processing vessel through a reaction gas supply unit such that the reaction gas reacts with the source to produce a reaction product; and replacing an internal atmosphere of the processing vessel, the replacing being performed between the operations. | 09-17-2015 |