Patent application number | Description | Published |
20080223434 | SOLAR CELL AND PROCESS FOR PRODUCING THE SAME - The present invention provides a solar cell that is useful for industry and has high photoelectric conversion efficiency and a method of manufacturing the same. A solar cell according to an aspect of the invention includes: a substrate; a buffer layer that is formed on the substrate and is composed of a group-III nitride semiconductor; and a group-III nitride semiconductor layer (p-type layer/an n-type layer) that has a p-n junction therein and is formed on the buffer layer. At least one of the buffer layer and the group-III nitride semiconductor layer having the p-n junction therein has a compound semiconductor layer formed by a sputtering method. | 09-18-2008 |
20080303054 | APPARATUS FOR PRODUCING GROUP-III NITRIDE SEMICONDUCTOR LAYER, METHOD OF PRODUCING GROUP-III NITRIDE SEMICONDUCTOR LAYER, METHOD OF PRODUCING GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE THEREOF, AND LAMP THEREOF - An apparatus for producing a group-III nitride semiconductor layer which forms a group-III nitride semiconductor layer on a substrate by a sputtering method, the apparatus including: a first plasma-generating region where a target containing a group-III element is disposed and the target is sputtered to generate material particles formed of a material contained in the target; and a second plasma generating region where the substrate is disposed and nitrogen-containing plasma is generated. The first plasma-generating region and the second plasma-generating region are provided inside a chamber, and the first plasma-generating region and the second plasma-generating region are separated by a shielding wall which has an opening part from which the material particles are supplied onto the substrate. Also disclosed are a method of producing a group-III nitride semiconductor layer, a method of producing a group-III nitride semiconductor light-emitting device, and a lamp thereof. | 12-11-2008 |
20090114942 | APPARATUS FOR MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR LAYER, METHOD OF MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR LAYER, GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - The present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer having high crystallinity. An embodiment of the present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer on a substrate | 05-07-2009 |
20090142870 | MANUFACTURING METHOD OF GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a manufacturing method of a group III nitride semiconductor light-emitting device, including a lamination step of forming a plurality of lamination films including a group III nitride semiconductor on a substrate, in which a substrate on which is formed a foundation layer including a monocrystalline group III nitride semiconductor is used as the substrate, and lamination films are formed on the foundation layer by a sputtering method, with the substrate including the foundation layer and a target made from a group III metal or an alloy including a group III metal being placed in a sputtering chamber. | 06-04-2009 |
20090205707 | SOLAR CELL AND METHOD FOR PRODUCING THE SAME - The object of the present invention is to provide a solar cell which is industrially beneficial and has high light conversion efficiency; and a method for producing a solar cell; and the present invention provides a solar cell comprising a substrate, a power generation layer for converting received light into electrical power, a translucent electrode, and another electrode, when light travels through each member from a first surface thereof, a surface opposite to the first surface is defined as a second surface, the power generation layer is formed at a second surface side of the substrate, the translucent electrode is formed on one surface of the power generation layer, and another electrode is formed on the other surface of the power generation layer, wherein the translucent electrode comprises hexagonal In | 08-20-2009 |
20090206361 | GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR PRODUCING THE SAME, AND LAMP THEREOF - A group III nitride semiconductor light emitting device with a double sided electrode structure which has a low driving voltage as well as excellent light emission efficiency is provided, and the group III nitride semiconductor light emitting device includes at least an impurity layer | 08-20-2009 |
20090283795 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, AND LAMP - Provided is a method for producing a group III nitride semiconductor light emitting device capable of producing a group III nitride semiconductor light emitting device with excellent light emitting properties with excellent productivity; a group III nitride semiconductor light emitting device; and a lamp. | 11-19-2009 |
20090315046 | GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - The present invention provides a group-III nitride compound semiconductor light-emitting device having high productivity and good emission characteristics, a method of manufacturing a group-III nitride compound semiconductor light-emitting device, and a lamp. A method of manufacturing a group-III nitride compound semiconductor light-emitting device includes a step of forming on a substrate 11 a semiconductor layer made of a group-III nitride compound semiconductor including Ga as a group-III element using a sputtering method. The substrate 11 and a sputtering target are arranged so as to face each other, and a gap between the substrate 11 and the sputtering target is in the range of 20 to 100 mm. In addition, when the semiconductor layer is formed by the sputtering method, a bias of more than 0.1 W/cm | 12-24-2009 |
20100006430 | SPUTTERING DEPOSITION APPARATUS AND BACKING PLATE FOR USE IN SPUTTERING DEPOSITION APPARATUS - A backing plate for use in a sputtering deposition apparatus being capable of stably holding Ga, and a sputtering deposition apparatus which is equipped with the backing plate are provided. Such a backing plate for use in a sputtering deposition apparatus is a backing plate for holding a target material which contains Ga, and at least a contact surface of which coming into contact with the target material is constituted from an easily wettable material having a contact angle to Ga in a liquid state of not more than 90°. | 01-14-2010 |
20100051980 | METHOD FOR MANUFACTURING GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - A method for manufacturing a Group III nitride semiconductor light-emitting device according to the present invention, comprising forming, on a substrate, a semiconductor layer comprised of a Group III nitride compound semiconductor containing Ga as a Group III element by a sputtering method, wherein during the formation of the semiconductor layer, sputtering is performed under the condition where at least the surface layer of a sputtering target comprised of Ga is liquefied. | 03-04-2010 |
20100065855 | METHOD OF MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, GROUP-III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND LAMP - The object of the present invention is to provide a method of manufacturing a Group-III nitride semiconductor light-emitting device that is highly productive and that enables production of a device having excellent light-emitting properties; a Group-III nitride semiconductor light-emitting device; and a lamp using the light emitting device. The present invention provides a method of manufacturing a Group-III nitride semiconductor light-emitting device, comprising the steps of: activating a gas including a Group-V element and a metal material with plasma, thereby reacting the gas with the metal material; forming on a substrate an intermediate layer that is made of a Group-III nitride compound; and stacking an n-type semiconductor layer that is made of a Group-III nitride semiconductor, a light-emitting layer, and a p-type semiconductor layer, sequentially on the intermediate layer, wherein the Group-V element is nitrogen, the gas fraction of nitrogen in the gas is within a range of more than 20% to less than 99% during forming of the intermediate layer, and the intermediate layer is formed into a single crystal structure. | 03-18-2010 |
20100148150 | GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A Group III nitride compound semiconductor light emitting device is provided which has: an n-type semiconductor layer ( | 06-17-2010 |
20100200874 | PHOSPHOR, METHOD FOR PRODUCING THE SAME AND LIGHT-EMITTING DEVICE USING THE SAME - The invention is a phosphor which includes a phosphor material having a composition represented by a general formula: M(0) | 08-12-2010 |
20100213476 | GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - The present invention provides a group-III nitride compound semiconductor light-emitting device having high productivity and good emission characteristics, a method of manufacturing a group-III nitride compound semiconductor light-emitting device, and a lamp. The method of manufacturing a group-III nitride compound semiconductor light-emitting device includes: a pre-process of performing plasma processing on a substrate ( | 08-26-2010 |
20100219445 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND LAMP - A buffer layer | 09-02-2010 |
20100244040 | GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer ( | 09-30-2010 |
20100244086 | METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - A method for manufacturing a Group III nitride semiconductor of the present invention, comprising a sputtering step for disposing a substrate and a target in a chamber and forming a Mg-doped Group III nitride semiconductor on the substrate by a reactive sputtering method, wherein the sputtering step includes respective substeps of: a film formation step for forming a semiconductor thin film while doping with Mg; and a plasma treatment step for applying an inert gas plasma treatment to the semiconductor thin film that has been formed in the film formation step, and the Group III nitride semiconductor is formed by laminating the semiconductor thin film through alternate repetitions of the film formation step and the plasma treatment step. | 09-30-2010 |
20100261308 | SOLAR CELL AND PROCESS FOR PRODUCING THE SAME - The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer. | 10-14-2010 |
20100327311 | GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND PRODUCTION METHOD THEREOF, AND LAMP - There are provided a group III nitride semiconductor light emitting device which is constituted of a substrate, an intermediate layer formed thereon having a favorable level of orientation properties, and a group III nitride semiconductor formed thereon having a favorable level of crystallinity, and having excellent levels of light emitting properties and productivity; a production method thereof; and a lamp,
| 12-30-2010 |
20110001163 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - A method for producing a group III nitride semiconductor light-emitting device including: an intermediate layer formation step in which an intermediate layer containing group III nitride is formed on a substrate by sputtering, and a laminate semiconductor formation step in which an n-type semiconductor layer having a base layer, a light-emitting layer, and a p-type semiconductor layer are laminated on the intermediate layer in this order, wherein the method includes a pretreatment step in which the intermediate layer is treated using plasma between the intermediate layer formation step and the laminate semiconductor formation step, and a formation step for the base layer which is included in the laminate semiconductor formation step is a step for laminating the base layer by sputtering. | 01-06-2011 |
20110018022 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light-emitting device of the present invention includes: a substrate ( | 01-27-2011 |
20110062479 | METHOD OF MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - Provided are a method of manufacturing a group-III nitride semiconductor light-emitting device in which a light-emitting device excellent in the internal quantum efficiency and the light extraction efficiency can be obtained, a group-III nitride semiconductor light-emitting device and a lamp. Included are an epitaxial step of forming a semiconductor layer ( | 03-17-2011 |
20110084307 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer ( | 04-14-2011 |
20110101391 | GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND LAMP - A Group III nitride semiconductor device of the present invention is obtained by laminating at least a buffer layer ( | 05-05-2011 |
20110235309 | ILLUMINATION DEVICE FOR DISPLAY DEVICE, AND DISPLAY DEVICE - An illumination device for a display device, which is formed from a substrate and a plurality of white light-emitting devices disposed on top of the substrate, and can be used as a backlight for a liquid crystal display panel, wherein the white light-emitting devices have a light source and a phosphor that is excited by the light source and emits light, and a fluorescent material with a composition represented by a general formula: M(0) | 09-29-2011 |
20110284919 | METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LAYER, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - A method for manufacturing a Group III nitride semiconductor layer according to the present invention includes a sputtering step of disposing a substrate and a target containing a Group III element in a chamber, introducing a gas for formation of a plasma in the chamber and forming a Group III nitride semiconductor layer added with Si as a dopant on the substrate by a reactive sputtering method, wherein a Si hydride is added in the gas for formation of a plasma. | 11-24-2011 |
20120086027 | GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer ( | 04-12-2012 |
20130154141 | PHOSPHOR, METHOD FOR PRODUCING THE SAME AND LIGHT-EMITTING DEVICE USING THE SAME - A method for providing a phosphor, including a kneading step in which a raw material is kneaded to provide a raw material mixture; a sintering step in which the raw material mixture is sintered; and a heat treatment step in which the sintered raw material mixture is heat-treated, wherein the raw material includes at least one or more M-containing materials selected from MSi | 06-20-2013 |