Patent application number | Description | Published |
20090005475 | RESIN COMPOSITION - Moldings made with a polyester resin which comprises a cyclic compound represented by a following formula | 01-01-2009 |
20090311820 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer | 12-17-2009 |
20090315134 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer | 12-24-2009 |
20090317932 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer | 12-24-2009 |
20090325246 | PROCESS FOR PRODUCTION OF BETAINE - According to the present invention, by using 4-halogeno-3-hydroxybutanamide as a substrate in quaternary amination reaction with trialkylamine which is an important step in betaine (such as carnitine) preparation processes, it becomes possible to reduce the production of crotonic acid derivatives (the major by-product) greatly compared to conventional processes. Consequently, it becomes possible to prepare a betaine, such as carnitine, at a high yield. | 12-31-2009 |
20100025569 | SOLID-STATE IMAGING DEVICE, METHOD OF PRODUCING THE SAME, AND IMAGING DEVICE - A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films. | 02-04-2010 |
20100032785 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from a rear-surface side. The thickness of the silicon layer 4 is 10 μm or less. | 02-11-2010 |
20100059715 | RESIN COMPOSITION, SHAPED ARTICLE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE - A resin composition that has high mechanical strength properties, has superior chemical characteristics such as chemical resistance and heat resistance, has high degree of freedom of product design, and has a structure considering the impact on environment is provided at low cost. The resin composition composed of a polyamide resin contains a cotton fiber as a natural fiber. The additive amount of the cotton fiber is preferably 1 wt % to 25 wt % both inclusive. The polyamide resin is polyamide 11 using castor oil as a raw material of plant origin. The average fiber diameter of the cotton fiber is 100 μm or less. The polyamide resin and the cotton fiber are melted and kneaded, and then hot-formed, and thereby a shaped article containing a plant fiber can be fabricated. In addition to the cotton fiber, a plant fiber such as a hemp fiber, a bamboo fiber, and wood powder and a biofiber such as a silk fiber may be applied. | 03-11-2010 |
20100194717 | ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE - The present invention provides an organic electroluminescence display device including an organic electroluminescence element which includes a transparent electrode, a counter electrode, and an organic compound layer provided between the transparent electrode and the counter electrode, the organic compound layer including a light emitting layer, and a fine particle-containing layer positioned in the optical path of light emitted from the light emitting layer and adjacent to the transparent electrode, wherein the fine particle-containing layer contain an organic resin material having a refractive index equal to or lower than the refractive index of the transparent electrode, and fine particles having a refractive index higher than the refractive index of the organic resin material and a weight average particle diameter of 0.5 μm to 5 μm, and the fine particle-containing layer has a thickness of 2 μm to 10 μm. | 08-05-2010 |
20110102620 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, CAMERA, AND ELECTRONIC DEVICE - A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode. | 05-05-2011 |
20110250717 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer | 10-13-2011 |
20110269258 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a solid-state imaging device in which: photo sensor portions are formed in a silicon layer over a substrate, a first conductivity type region being included in the photo sensor portions and a second conductivity type region being formed in the silicon layer implanted from a rear-surface of the solid-state imaging device by ion implantation; a wiring portion is formed above the silicon layer; and a supporting substrate is bonded to the wiring portion, wherein, the solid-state imaging device is configured for receiving incident light via the rear-surface of the solid-state imaging device. | 11-03-2011 |
20120104479 | SOLID-STATE IMAGING DEVICE, METHOD OF PRODUCING THE SAME, AND IMAGING DEVICE - A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films. | 05-03-2012 |
20120135559 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a solid-state imaging device including: forming photo sensor portions in a silicon substrate; forming a wiring portion above said silicon substrate; bonding another substrate onto said wiring portion; removing said substrate in response to performing the bonding of the another substrate onto the wiring portion; and sequentially forming an anti-reflective coating on the silicon substrate, a color filter on the anti-reflective coating, and an on-chip lens. | 05-31-2012 |
20130083544 | LIGHT DIFFUSION FILM FOR LED LIGHTING - Provided is a light diffusion film for LED lighting that achieves a balance between concealment and light-utilization efficiency. The light diffusion film for LED lighting includes a sheet of substrate, an internal scattering layer and a surface shaping layer. The internal scattering layer contains a binder and particles; the mean particle diameter A of the particles is from 0.5 μm to 5.0 μm; the refractive index difference between the particles and the binder is from more than 0 to 0.15; and the content of the particles is from 10 parts by mass to 120 parts by mass with respect to 100 parts by mass of the binder. | 04-04-2013 |
20130182156 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - There is provided a solid-state imaging device which includes a focus detection pixel that has a light shielding film, which is formed on a light receiving surface of a photoelectric conversion portion and shields light in a part of the light receiving surface, performs pupil division and photoelectric conversion of a received light flux and acquires a phase difference detection signal, where the light shielding film is formed avoiding a gate electrode of a reading gate portion to read a signal charge from the photoelectric conversion portion. | 07-18-2013 |
20130316489 | SOLID-STATE IMAGING DEVICE - A MOS solid-state imaging device is provided in which withstand voltage and 1/f noise of a MOS transistor are improved. | 11-28-2013 |
20150041871 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, CAMERA, AND ELECTRONIC DEVICE - A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode. | 02-12-2015 |
20150069478 | SOLID-STATE IMAGING DEVICE - A MOS solid-state imaging device is provided in which withstand voltage and 1/f noise of a MOS transistor are improved. | 03-12-2015 |