Patent application number | Description | Published |
20100120231 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device according to the present invention includes the following step: a step (S | 05-13-2010 |
20100216268 | MANUFACTURING METHOD OF A SEMICONDUCTOR ELEMENT - A method of manufacturing a semiconductor element of good characteristics at a reduced manufacturing cost is provided. The manufacturing method of the semiconductor element includes a GaN-containing semiconductor layer forming step, an electrode layer forming step, a step of forming an Al film on the GaN-containing semiconductor layer, a step of forming a mask layer made of a material of which etching rate is smaller than that of a material of the Al film, a step of forming a ridge portion using the mask layer as a mask, a step of retreating a position of a side wall of the Al film with respect to a position of a side wall of the mask layer, a step of forming, on the side surface of the ridge portion and the top surface of the mask layer, a protective film made of a material of which etching rate is smaller than that of the material forming the Al film, and a step of removing the Al film and thereby removing the mask layer and a portion of the protective film formed on the top surface of the mask layer. | 08-26-2010 |
20110012160 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device | 01-20-2011 |
20110042706 | AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs | 02-24-2011 |
20110049542 | AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs - The present invention makes available Al | 03-03-2011 |
20110062466 | AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs | 03-17-2011 |
20110129997 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device according to the present invention includes the following step: a step (S | 06-02-2011 |
20130017671 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes the steps of: preparing a substrate having a region that at least includes one main surface thereof and that is made of single-crystal silicon carbide; forming an active layer on the one main surface; grinding a region including the other main surface of the substrate opposite to the one main surface; removing a damaged layer formed in the step of grinding the region including the other main surface; and forming a backside electrode in contact with the main surface exposed by the removal of the damaged layer. The one main surface has an off angle of not less than 50° and not more than 65° relative to a {0001} plane. | 01-17-2013 |
20130143398 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a MOSFET includes the steps of: preparing a substrate made of silicon carbide; forming a drain electrode making ohmic contact with the substrate; and forming a backside pad electrode on and in contact with the drain electrode. The drain electrode formed in the step of forming the drain electrode is made of an alloy containing Ti and Si. Further, the backside pad electrode formed is maintained at a temperature of 300° C. or smaller until completion of the MOSFET. Accordingly, the manufacturing process can be efficient while achieving excellent adhesion between the electrodes. | 06-06-2013 |
20140004696 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | 01-02-2014 |