Hiroyoshi Noguchi
Hiroyoshi Noguchi, Singapore SG
Patent application number | Description | Published |
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20120074410 | FUSED BITHIOPHENE-VINYLENE POLYMERS - A polymer comprising repeating units A and optionally repeating units B wherein Z=S, Se, N—R and O; W is at each occurrence independently a monocyclic or polycylic moiety optionally substituted with 1-4 R | 03-29-2012 |
20120217482 | SEMICONDUCTOR MATERIALS PREPARED FROM DITHIENYLVINYLENE COPOLYMERS - Disclosed are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic π-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as improved solution-processability and low annealing temperature. | 08-30-2012 |
20120277391 | SEMICONDUCTOR MATERIALS BASED ON DITHIENOPYRIDONE COPOLYMERS - The present invention provides a polymer comprising a unit of formula | 11-01-2012 |
20120277404 | SEMICONDUCTOR MATERIALS BASED ON DIKETOPIPERIDINOPIPERIDINE COPOLYMERS - The present invention provides a polymer comprising a unit of formula | 11-01-2012 |
20120296058 | SEMICONDUCTOR MATERIALS BASED ON THIENOTHIOPHENE-2,5-DIONE OLIGOMERS AND POLYMERS - The present invention provides a polymer comprising a unit of formula | 11-22-2012 |
20130144065 | SEMICONDUCTOR MATERIALS PREPARED FROM BRIDGED BITHIAZOLE COPOLYMERS - The present invention provides semiconducting compounds, oligomers and polymers of formula wherein A | 06-06-2013 |
20140142265 | DITHIENOPHTHALIMIDE SEMICONDUCTOR POLYMERS - The invention concerns apolymer of the formula (I): wherein: M1 is an optionally substituted dithienophthalimide formula (II): wherein: X is N or C—R, wherein R is H or a C | 05-22-2014 |
Hiroyoshi Noguchi, Nishinomiya JP
Patent application number | Description | Published |
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20150126751 | PHENACENE COMPOUNDS FOR ORGANIC ELECTRONICS - Phenacene compounds of formula (I) are disclosed. All the variables in the formula are the same as defined in the description. A thin film semiconductor comprising the above compounds, and a field effect transistor device, a photovoltaic device, an organic light emitting diode device and a unipolar or complementary circuit device comprising the thin film are also disclosed. | 05-07-2015 |
Hiroyoshi Noguchi, Singapore JP
Patent application number | Description | Published |
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20150162546 | SEMICONDUCTOR MATERIALS PREPARED FROM BRIDGED BITHIAZOLE COMPOLYERS - The present invention provides semiconducting compounds, oligomers and polymers of formula | 06-11-2015 |