Patent application number | Description | Published |
20100025372 | PLASMA PROCESSING METHOD AND APPARATUS - In a plasma processing method, a conductor of an electrostatic chuck (ESC) and an electrode are electrically grounded prior to starting the plasma processing. A DC voltage with a polarity is applied to the conductor at a first time point after loading a substrate on the electrode. Then, the electrode is switched from an electrically grounded state to an electrically floating state at a second time point. A RF power is then applied to the electrode at a third time point. The application of the RF power is stopped at a fourth time point after a specified time has lapsed from the third time point. Then, the electrode is switched from the electrically floating state to the electrically grounded state at a fifth time point. Thereafter, the application of the DC voltage is stopped and the conductor is restored to a ground potential at a sixth time point. | 02-04-2010 |
20100041240 | FOCUS RING, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A focus ring of a ring shape is disposed to surround a target substrate on a lower electrode on which the target substrate is mounted in a process chamber. The process chamber receives the target substrate and subjects the received target substrate to a plasma process. At the point of time when the focus ring is first used for the plasma process, a distance between a lower side of an edge portion of the target substrate and a portion of the focus ring facing the lower side of the edge portion of the target substrate is set to be equal to or greater than about 0.4 mm. | 02-18-2010 |
20100181294 | FOCUS RING HEATING METHOD, PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, AND COMPUTER-READABLE STORAGE MEDIUM - A plasma etching apparatus includes a vacuum processing chamber; a lower electrode, i.e., a mounting table for mounting the substrate, provided in the vacuum processing chamber; an upper electrode provided to face the lower electrode; a gas supply unit for supplying a processing gas to the vacuum processing chamber; a high frequency power supply unit for supplying a high frequency power to the lower electrode; and a focus ring provided on the lower electrode to surround a periphery of the substrate. In a method for performing a plasma etching on a substrate by using the plasma etching apparatus, a plasma is generated in the vacuum processing chamber to perform the plasma etching on the substrate by using the plasma after the focus ring is heated by supplying a high frequency power from the high frequency power supply unit to the lower electrode under a condition that no plasma is generated. | 07-22-2010 |
20110240224 | SUBSTRATE PROCESSING APPARATUS - Disclosed is a substrate processing apparatus capable of suppressing generation of plasma in the space between a moving electrode and an end wall at one side of a cylindrical chamber. The substrate processing apparatus includes a cylindrical chamber to receive a wafer, a shower head movable along a central axis of the chamber inside the chamber, a susceptor opposing the shower head in the chamber, and a flexible bellows connecting the shower head to a cover of the chamber, wherein a high frequency power is applied to a processing space presented between the shower head and the susceptor, processing gas is introduced into the processing space, the shower head and the side wall of the chamber are non-contact to each other, and a bypass member is installed electrically connecting the shower head and the cover or the side wall of the chamber. | 10-06-2011 |
20110303643 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - The substrate processing apparatus includes a susceptor, which is connected to a high frequency power source and on which a substrate is held, an upper electrode plate facing the susceptor, and a processing space PS formed between the susceptor and the upper electrode, to perform a plasma etching process on the wafer by using plasma. The substrate processing apparatus includes a dielectric plate which covers a surface of the upper electrode plate, the surface of which faces the processing space PS, the upper electrode plate is divided into an inner electrode facing a center portion of the wafer and an outer electrode facing a circumferential portion of the wafer, the inner electrode and the outer electrode are electrically insulated from each other, and a second variable DC power source applies a positive DC voltage to the inner electrode and the outer electrode is electrically grounded. | 12-15-2011 |
20110318934 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed | 12-29-2011 |
20140048210 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed | 02-20-2014 |
20150144266 | SUBSTRATE PROCESSING APPARATUS - The substrate processing apparatus includes a lower electrode on which a substrate is capable of being held, a high frequency power source electrically connected to the lower electrode, an upper electrode facing the lower electrode, a plasma processing space being formed between the lower electrode and the upper electrode, wherein the upper electrode includes an inner upper electrode facing a center portion of the lower electrode and an outer upper electrode facing a circumferential portion of the lower electrode, the inner electrode and the outer electrode being electrically insulated from each other, a first direct current power source electrically connected to the inner upper electrode to apply a positive direct current voltage, and a dielectric member covering a bottom surface of the upper electrode, the dielectric member facing the lower electrode with the plasma processing space in-between. | 05-28-2015 |