Patent application number | Description | Published |
20090285034 | LATENCY COUNTER, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME, AND DATA PROCESSING SYSTEM - To provide a latency counter capable of increasing the signal quality of outputted internal commands. There is provided a point-shift FIFO circuit controlled by count values of a counter circuit. The point-shift FIFO circuit includes: a first wired-OR circuit that combines outputs of first latch circuits; a second wired-OR circuit that combines outputs of second latch circuits; a gate circuit that combines outputs of the first and second wired-OR circuits; and reset circuits that reset the first and second wired-OR circuits, respectively, based on the count value of the counter circuit. According to the present invention, as compared to a case that outputs of all the latch circuits are wired-OR connected, output loads are more reduced. Thus, a high signal quality can be obtained. | 11-19-2009 |
20090285048 | COUNTER CIRCUIT, LATENCY COUNTER, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME, AND DATA PROCESSING SYSTEM - To provide a counter circuit capable of accurately counting a high-frequency signal in which hazard or the like is easily generated. There are provided: a frequency dividing circuit that generates first and second frequency dividing clocks, which differ in phase to each other, based on a clock signal; a first counter that counts the first frequency dividing clock; a second counter that synchronizes with the second frequency dividing clock to fetch a count value of the first counter; and a selection circuit that exclusively selects count values of the first and second counters. According to the present invention, a relation of the count values between the first and second counters is kept always constant, and thus, even when hazard occurs, the count values are only made to jump and the count values do not fluctuate. | 11-19-2009 |
20090289677 | DEVICE - A device in which a clock generation circuit is connected to a counter circuit for controlling operation timing of a DLL circuit or the like, and the counter circuit is intermittently operated by intermittently supplying a clock signal to the counter circuit from the clock generation circuit. | 11-26-2009 |
20100207680 | IMPEDANCE CONTROL CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - To include two counter circuits that change impedances of two replica circuits, respectively, and an impedance adjustment control circuit that controls the counter circuits to update count values of the counter circuits. The impedance adjustment control circuit controls one of the counter circuits to finish updating the count value of the counter circuit in response to a change of the impedance of the corresponding replica circuit from a state of being lower than an impedance of an external resistor to a state of being higher than the impedance of the external resistor, and controls the other counter circuit to finish updating the count value of the other counter circuit in response to a change of the impedance of the other replica circuit from a state of being higher than the impedance of the former replica circuit to a state of being lower than the impedance of the former replica circuit. With this configuration, the adjust errors generated in the replica circuits are canceled. | 08-19-2010 |
20100208535 | SEMICONDUCTOR MEMORY DEVICE, MEMORY MODULE INCLUDING THE SAME, AND DATA PROCESSING SYSTEM - To provide a semiconductor device including a skew detecting circuit activated in a write leveling mode, and an ODT control circuit that activates a terminating resistance circuit connected to a data strobe terminal by using an ODT signal. The ODT control circuit includes counters that delay the ODT signal, activates the terminating resistance circuit by using the ODT signal having passed the counters in a normal operation mode, and activates the terminating resistance circuit by using the ODT signal having bypassed the counters in the write leveling mode. With this configuration, in the write leveling mode, a write leveling operation can be performed quickly without waiting for latency of the ODT signal. | 08-19-2010 |
20100302893 | SEMICONDUCTOR MEMORY DEVICE, MEMORY CONTROLLER THAT CONTROLS THE SAME, AND INFORMATION PROCESSING SYSTEM - To include a power-down control circuit that suspends an operation of a predetermined internal circuit in response to a power-down command, and an external terminal to which a selection signal is input from outside simultaneously with issuance of a power-down command. The power-down control circuit suspends an operation of a DLL circuit when the selection signal is at a low level, and continues an operation of the DLL circuit when the selection signal is at a high level. According to the present invention, by using the selection signal input simultaneously with a power-down command, mode selection can be made on-the-fly. | 12-02-2010 |
20110279157 | DEVICE - A device in which a clock generation circuit is connected to a counter circuit for controlling operation timing of a DLL circuit or the like, and the counter circuit is intermittently operated by intermittently supplying a clock signal to the counter circuit from the clock generation circuit. | 11-17-2011 |
20120124436 | SEMICONDUCTOR MEMORY DEVICE PERFORMING PARALLEL TEST OPERATION - A semiconductor memory device includes: first test circuits each of which operates in a first test mode in which the first test circuit receives a plurality of comparison result signals each indicating a comparison result of storage contents of a plurality of memory cells included in a memory cell array in parallel and generates a first output signal by converting the comparison result signals into serial signals or a second test mode in which the first test circuit generates a second output signal by compressing the data amount of the plurality of comparison result signals. Each of the first test circuits outputs the first and second output signals to a common bus. | 05-17-2012 |