Patent application number | Description | Published |
20090278744 | PHASED ARRAY ANTENNA - There is provided a phased array antenna having variable phase shifters constituted by using a variable dielectric-constant dielectric substance whose dielectric constant varies according to an applied electric field, which antenna can dispense with a DC blocking element that causes mismatch, and reduce deformation of the beam shape even when beam tilt occurs, in the case where the variable phase shifters are divided into those for right-side tilt and those for left-side tilt and the phase shift amounts thereof are independently controlled. | 11-12-2009 |
20100078606 | PROCESS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL, AND GROUP-III ELEMENT NITRIDE CRYSTAL - A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel. | 04-01-2010 |
20100192839 | PROCESS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL AND APPARATUS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL - A group III element nitride single crystal is grown on a template immersed in a raw material liquid retained in a crucible and containing a group III material and one of an alkali metal and an alkali earth metal. The raw material liquid remaining after the growth of the single crystal is cooled and solidified, and by feeding a hydroxyl group-containing solution into the crucible, the solidified raw material is removed from around the template, and thus the group III element nitride single crystal is taken out from inside the solidified raw material. The template is disposed at a position away from the bottom of the crucible. | 08-05-2010 |
20100213576 | METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL SUBSTRATE, GROUP III NITRIDE CRYSTAL SUBSTRATE, AND SEMICONDUCTOR DEVICE USING GROUP III NITRIDE CRYSTAL SUBSTRATE - Disclosed is a method for producing a group III nitride crystal substrate. A group III nitride crystal is formed by a growth method using a flux. The group III nitride crystal substrate is heat treated at a temperature equal to or higher than the lowest temperature at which the flux contained inside the group III nitride crystal substrate through intrusion into the crystal during the crystal formation can be discharged to outside the group III nitride crystal substrate, and equal to or lower than the highest temperature at which the surface of the group III nitride crystal substrate is not decomposed. | 08-26-2010 |
20110012070 | GROUP-III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL - A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel. | 01-20-2011 |
20110228276 | NITROGEN OXIDE SENSING ELEMENT, NITROGEN OXIDE SENSOR, NITROGEN OXIDE CONCENTRATION DETERMINATION DEVICE USING SAME, AND METHOD FOR DETERMINING NITROGEN OXIDE CONCENTRATION - The nitrogen oxide sensing element of the present invention is such that a sensing film ( | 09-22-2011 |
20120168695 | GROUP-III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL - A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel. | 07-05-2012 |
20130125618 | NITRIC OXIDE DETECTION ELEMENT - Provided is a nitric oxide detection element which is capable of measuring a trace amount of NO gas contained in a gas in a scale of several ppb and of which the time degradation in performance is suppressed. The nitric oxide detection element includes at a surface thereof: a dye having a porphyrin skeleton and containing divalent cobalt as a central metal; and a radical scavenger. The nitric oxide detection element includes a substrate | 05-23-2013 |
20130137184 | NITRIC OXIDE DETECTION ELEMENT AND PROCESS FOR PRODUCING SAME - Provided are a nitric oxide detection element capable of detecting NO gas contained in a mixed gas at a high speed even when the amount thereof is a super trace amount of ten and several parts per billion; and a process for producing the element. In a nitric oxide detection element having a substrate | 05-30-2013 |
20140030549 | GROUP III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL - A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel. | 01-30-2014 |
Patent application number | Description | Published |
20130238182 | METHOD OF CONTROLLING TRAVEL WITHIN TRAVEL SYSTEM FOR UNMANNED VEHICLE AND TRAVEL SYSTEM FOR UNMANNED VEHICLE - Topographical data for a work location is created and information on a new travel route is generated. Next, a work location including the new travel route is constructed on the basis of the created topographical data. Then, the information on the new travel route generated is provided to the vehicle, the vehicle is made to travel along said new travel route in accordance with temporary travel control data, and actual topographical data for the new travel route is acquired. Next, the aforementioned temporary travel control data is corrected on the basis of the acquired actual topographical data for the new travel route. After that, the unmanned vehicle is made to travel in accordance with the corrected travel control data. | 09-12-2013 |
20130325208 | DRIVING SYSTEM OF UNMANNED VEHICLE AND DRIVING PATH GENERATION METHOD - Based on initial position information on an instructed fixed switch-back point and position information on a loading point, a relative positional relationship between the loading point and the switch-back point is generated. If the position of the loading point moves, then based on position information on the position- moved loading point, information on a direction of an unmanned vehicle at the loading point and information on a relative positional relationship, a new switch-back point is set at a position where the relative positional relationship can be maintained. When the initial position of the switch-back point is instructed, then on the basis of the initial position information on the switch-back point, a driving path leading to the loading point via the instructed switch-back point is generated and, when the position of the loading point moves, a driving path leading to the position-moved loading point via the new switch-back point is generated. | 12-05-2013 |