Patent application number | Description | Published |
20080224251 | Optimal Rasterization for Maskless Lithography - A lithographic system is provided in which an extent of overlap between pattern sections is adjusted in order to match a size of a pattern section to a size of a repeating portion of the pattern to be formed. | 09-18-2008 |
20080226990 | Apertured Window for Enabling Flexible Illumination Overfill of Patterning Devices - A dark border region may be integrated with a window covering a patterning device, such that light from an active area of the patterning device passes through the dark border region, while excess light is removed from the system by the dark border region. The dark border region may be, for example and without limitation, a light-absorbing material, a wedged light reflective coating that reflects light out of the lithography system, or an interference grating that causes destructive interference in unwanted light to remove the unwanted light from the system. The dark border region may overlap a similar dark border region located on the surface of on the patterning device to optimize a width of the total dark border region without sacrificing excessive valuable real-estate area on the surface of the patterning device or compromising alignment tolerance levels of the lithography system. | 09-18-2008 |
20090303450 | Particle Detection on Patterning Devices with Arbitrary Patterns - A detection system for detecting particle contamination in a lithographic apparatus includes an illumination system that directs a radiation beam onto a section of a surface of a patterning device to generate at least first and second components of patterned radiation. A first detector is configured to detect the first component. A filter is configured to adaptively change the second component based on the detected first component, and a second detector is configured to detect the filtered second component. An imaging device generates an image corresponding to the detected second filtered component, and the image indicates an approximate location of a particle on the surface of the patterning device. | 12-10-2009 |