Patent application number | Description | Published |
20080299415 | Sputtering Target, Thin Film for Optical Information Recording Medium and Process for Producing the Same - A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying A | 12-04-2008 |
20090139859 | Chromic Oxide Powder for Sputtering Target, and Sputtering Target Manufactured from such Chromic Oxide Powder - Provided is chromic oxide powder for a sputtering target comprised of chromic oxide wherein sulfur is 100 wtppm or less. This sputtering target contains chromic oxide of 5 molar % or higher or chromic oxide, wherein the sulfur content in the sputtering target is 100 wtppm or less, and the purity excluding gas components of moisture, carbon, nitrogen and sulfur is 99.95 wt % or higher. The chromic oxide powder for a sputtering target is able to increase the purity of the chromic oxide itself as well as increase the sintered density upon manufacturing a sputtering target. As a result of manufacturing a sputtering target using this chromic oxide powder, the crystal grains are refined, and provided is a uniform and dense sputtering target that does not generate cracks. | 06-04-2009 |
20100167000 | Sputtering Target, Thin Film for Optical Information Recording Medium and Process for Producing the Same - A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying A | 07-01-2010 |
20100240521 | Sputtering Target, Thin Film for Optical Information Recording Medium and Process for Producing the Same - A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying A | 09-23-2010 |
20100276276 | Thin Film Mainly Comprising Titanium Oxide, Sintered Sputtering Target Suitable for Producing Thin Film Mainly Comprising Titanium Oxide, and Method of Producing Thin Film Mainly Comprising Titanium Oxide - Provided is a thin film mainly comprising titanium oxide, wherein the thin film comprises components of Ti, Ag and O and contains 29.6 at % or more and 34.0 at % or less of Ti, 0.003 at % or more and 7.4 at % or less of Ag, and oxygen as the remainder thereof, and O/(2Ti+0.5Ag) as a ratio of oxygen to metals is 0.97 or more. This invention aims to provide a thin film mainly comprising titanium oxide having a high refractive index and a low extinction coefficient, a sintered sputtering target mainly comprising titanium oxide suitable for producing the thin film, and a method of producing a thin film mainly comprising titanium oxide. This invention also aims to provide a thin film that has superior transmittance, minimally deteriorates in reflectance, and is useful as an interference film or a protective film for an optical information recording medium. It is also possible to apply this film to a glass substrate; that is, which can be used as a heat reflective film, an antireflective film, and an interference filter. | 11-04-2010 |
20110036710 | Ge-Cr Alloy Sputtering Target - A Ge—Cr alloy sputtering target containing 5 to 50 at % of Cr and having a relative density of 95% or more, and a manufacturing method of such a Ge—Cr alloy sputtering target wherein Cr powder having a minus sieve of 75 μm or less, and Ge powder having a minus sieve of 250 μm or less and having a BET specific surface area of 0.4 m | 02-17-2011 |
20110278511 | Thin Film Comprising Titanium Oxide as Main Component and Sintered Compact Sputternig Target Comprising Titanium Oxide as Main Component - A thin film comprising titanium oxide as its main component, wherein the thin film includes titanium, oxygen and copper, content of Ti is 29.0 at % or higher and 34.0 at % or less and content of Cu is 0.003 at % or higher and 7.7 at % or less with remainder being oxygen and unavoidable impurities, and ratio of oxygen component to metal components, O/(2Ti+0.5Cu), is 0.96 or higher. This invention aims to obtain a thin film comprising titanium oxide as its main component with a high refractive index and low extinction coefficient and a sintered compact sputtering target comprising titanium oxide as its main component which is suitable for producing the foregoing thin film, to obtain a thin film with superior transmittance and low reflectance and which is effective as an interference film or protective film of an optical information recording medium, and to obtain a thin film that can be applied to a glass substrate; that is, a thin film that can be used as a heat ray reflective film, antireflection film, and interference filter. | 11-17-2011 |
20120024192 | Sputtering Target of Sintered Ti-Nb Based Oxide, Thin Film of Ti-Nb Based Oxide, and Method of Producing the Thin Film - Provided is a sputtering target of sintered Ti—Nb based oxide, wherein the sputtering target consists of titanium (Ti), niobium (Nb), and remainder being oxygen and unavoidable impurities, and the atomic ratio of Ti and Nb is 0.39≦(Nb/(Ti+Nb))≦0.79. The sputtering target of sintered Ti—Nb based oxide has a high refractive index and a low extinction coefficient. Also provided is a thin film of Ti—Nb based oxide obtained by using the foregoing target, which enables high-rate deposition. The thin film has superior transmittance, is subject to minimal reduction and variation of reflectivity, and is useful as an interference film or a protective film of an optical information recording medium, or as a part of a constituent layer of an optical recording medium. The thin film can also be applied to a glass substrate; that is, it can be used as a heat reflecting film, an antireflection film, or an interference filter. | 02-02-2012 |
20120043509 | Indium Oxide Sintered Compact, Indium Oxide Transparent Conductive Film, and Manufacturing Method of Indium Oxide Transparent Conductive Film - An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 mΩ·cm or less. This invention aims to provide an indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film. | 02-23-2012 |
20120103804 | Oxide Sintered Compact, Its Production Method, and Raw Material Powder for Producing Oxide Sintered Compact - An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering. | 05-03-2012 |
20120192763 | Thin Film Comprising Titanium Oxide as Main Component and Sintered Compact Sputtering Target Comprising Titanium Oxide as Main Component - A thin film comprising titanium oxide as its main component includes titanium, oxygen and copper, content of Ti is 29.0 to 34.0 at % and content of Cu is 0.003 to 7.7 at % or less with remainder being oxygen and unavoidable impurities. A ratio of oxygen component to metal components, O/(2Ti+0.5Cu), is 0.96 or higher. The thin film has a high refractive index and low extinction coefficient. A sintered compact sputtering target suitable for producing the foregoing thin film is also provided and can be used to obtain a thin film with superior transmittance and low reflectance and which is effective as an interference film or protective film of an optical information recording medium, and to obtain a thin film that can be applied to a glass substrate; that is, a thin film that can be used as a heat ray reflective film, antireflection film, and interference filter. | 08-02-2012 |
20120196076 | Thin Film Comprising Titanium Oxide as Main Component and Sintered Compact Sputtering Target Comprising Titanium Oxide as Main Component - A thin film comprising titanium oxide as its main component includes titanium, oxygen and copper, content of Ti is 29.0 to 34.0 at % and content of Cu is 0.003 to 7.7 at % or less with remainder being oxygen and unavoidable impurities. A ratio of oxygen component to metal components, O/(2 Ti+0.5 Cu), is 0.96 or higher. The thin film has a high refractive index and low extinction coefficient. A sintered compact sputtering target suitable for producing the foregoing thin film is also provided and can be used to obtain a thin film with superior transmittance and low reflectance and which is effective as an interference film or protective film of an optical information recording medium, and to obtain a thin film that can be applied to a glass substrate; that is, a thin film that can be used as a heat ray reflective film, antireflection film, and interference filter. | 08-02-2012 |
20120199796 | Sintered Compact of Indium Oxide System, and Transparent Conductive Film of Indium Oxide System - A sintered indium oxide comprising niobium as an additive, wherein the ratio of the number of niobium atoms relative to the total number of atoms of all metal elements contained in the sintered compact is within a range of 1 to 4%, the relative density is 98% or higher, and the bulk resistance is 0.9 mΩ·cm or less. Provided are a sintered compact of indium oxide system and a transparent conductive film of indium oxide system, which have characteristics of high transmittance in the short wavelength and long wavelength ranges since the carrier concentration is not too high even though the resistivity thereof is low. | 08-09-2012 |
20120205242 | Cu-In-Ga-Se QUATERNARY ALLOY SPUTTERING TARGET - A quaternary alloy sputtering target made of copper (Cu), indium (In), gallium (Ga) and selenium (Se), wherein the Cu—In—Ga—Se sputtering target has a composition that is represented by a composition formula of CuIn | 08-16-2012 |
20120286219 | SPUTTERING TARGET, SEMICONDUCTING COMPOUND FILM, SOLAR CELL COMPRISING SEMICONDUCTING COMPOUND FILM, AND METHOD OF PRODUCING SEMICONDUCTING COMPOUND FILM - The present invention provides a sputtering target which comprises an alkali metal, a Ib group element, a IIIb group element, and a VIb group element, and has a chalcopyrite crystal structure. Provided is a sputtering target comprising Ib-IIIb-VIb group elements and having a chalcopyrite crystal structure, which is suitable for producing, via a single sputtering process, a light-absorbing layer comprising the Ib-IIIb-VIb group elements and having the chalcopyrite crystal structure. | 11-15-2012 |
20130098760 | SPUTTERING TARGET FOR MAGNETIC RECORDING FILM, AND PROCESS FOR PRODUCING SAME - Provided is a sputtering target containing SiO | 04-25-2013 |
20130134038 | Ferromagnetic Material Sputtering Target - A ferromagnetic material sputtering target which is a sintered compact sputtering target made of a metal having Co as its main component, and nonmetallic inorganic material particles, wherein a plurality of metal phases having different saturated magnetization exist, and the nonmetallic inorganic material particles are dispersed in the respective metal phases. By increasing the pass-through flux of the sputtering target, it is possible to obtain a stable discharge. Moreover, it is also possible to obtain a ferromagnetic material sputtering target capable of obtaining a stable discharge in a magnetron sputtering device and which has a low generation of particles during sputtering. Thus, this invention aims to provide a ferromagnetic material sputtering target for use in the deposition of a magnetic thin film of a magnetic recording medium, and particularly of a magnetic recording layer of a hard disk adopting the perpendicular magnetic recording system. | 05-30-2013 |
20130168241 | Cu-In-Ga-Se QUATERNARY ALLOY SPUTTERING TARGET - A quaternary alloy sputtering target composed of copper (Cu), indium (In), gallium (Ga) and selenium (Se), wherein a composition ratio of the respective elements is represented by a formula of Cu | 07-04-2013 |
20130175167 | FERROMAGNETIC SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME - Provided is a ferromagnetic sputtering target having a composition containing 20 mol % or less of Cr, 5 to 30 mol % of Pt, 5 to 15 mol % of SiO | 07-11-2013 |
20130206591 | Sputtering Target for Magnetic Recording Film and Method for Producing Same - Provided is a sputtering target for a magnetic recording film containing SiO | 08-15-2013 |
20130248362 | Sputtering Target for Magnetic Recording Film and Process for Production Thereof - A sputtering target for a magnetic recording film containing SiO | 09-26-2013 |
20130292245 | FE-PT-Based Ferromagnetic Sputtering Target and Method for Producing Same - A ferromagnetic sputtering target having a composition comprising 5 to 50 mol % of Pt, 5 to 15 mol % of SiO | 11-07-2013 |
20140023868 | Sputtering Target of Sintered Ti-Nb Based Oxide, Thin Film of Ti-Nb Based Oxide, and Method of Producing The Thin Film - A sputtering target of sintered Ti—Nb based oxide is provided. The sputtering target consists of titanium (Ti), niobium (Nb), and remainder being oxygen and unavoidable impurities, and the atomic ratio of Ti and Nb is 0.39≦(Nb/(Ti+Nb))≦0.79. The sputtering target of sintered Ti—Nb based oxide has a high refractive index and a low extinction coefficient. Also provided is a thin film of Ti—Nb based oxide obtained by using the foregoing target, which enables high-rate deposition. The thin film has superior transmittance, is subject to minimal reduction and variation of reflectivity, and is useful as an interference or protective film of an optical information recording medium, or as a part of a constituent layer of an optical recording medium. The thin film can also be applied to a glass substrate; that is, it can be used as a heat reflecting or antireflection film, or an interference filter. | 01-23-2014 |
20140264197 | Indium Oxide Transparent Conductive Film - An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 mΩ·cm or less. An indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film are provided. | 09-18-2014 |
20140360870 | FERROMAGNETIC MATERIAL SPUTTERING TARGET CONTAINING CHROMIUM OXIDE - Provided is a ferromagnetic material sputtering target containing a matrix phase made of cobalt, or cobalt and chromium, or cobalt and platinum, or cobalt, chromium and platinum, and an oxide phase including at least chromium oxide, wherein the ferromagnetic material sputtering target contains one or more types among Y, Mg, and Al in a total amount of 10 wtppm or more and 3000 wtppm or less, and has a relative density of 97% or higher. The provided ferromagnetic material sputtering target containing chromium oxide can maintain high density, has uniformly pulverized oxide phase grains therein, and enables low generation of particles. | 12-11-2014 |
20140360871 | Fe-Pt-Ag-C-Based Sputtering Target Having C Grains Dispersed Therein, and Method for Producing Same - An Fe—Pt—Ag—C-based sintered compact sputtering target having a composition represented by a formula (Fe | 12-11-2014 |
20140367254 | Co-Cr-Pt-Based Sputtering Target and Method for Producing Same - A sputtering target containing, as metal components, 0.5 to 45 mol % of Cr and remainder being Co, and containing, as non-metal components, two or more types of oxides including Ti oxide, wherein a structure of the sputtering target is configured from regions where oxides including at least Ti oxide are dispersed in Co (non-Cr-based regions), and a region where oxides other than Ti oxide are dispersed in Cr or Co—Cr (Cr-based region), and the non-Cr-based regions are scattered in the Cr-based region. An object of this invention is to provide a sputtering target for forming a granular film which suppresses the formation of coarse complex oxide grains and generates fewer particles during sputtering. | 12-18-2014 |
20150014155 | Ferromagnetic Material Sputtering Target Containing Chromium Oxide - Provided is a ferromagnetic material sputtering target containing a matrix phase made of cobalt, or cobalt and chromium, or cobalt and platinum, or cobalt, chromium and platinum, and an oxide phase including at least a chromium oxide, wherein the sputtering target contains one or more types of Zr and W in a total amount of 100 wt ppm or more and 15000 wt ppm or less, and has a relative density of 97% or higher. An object of this invention is to provide a ferromagnetic material sputtering target containing chromium oxide with low generation of particles capable of maintaining high density and with uniformly pulverized oxide phase grains. | 01-15-2015 |
20150021175 | Magnetic Material Sputtering Target and Manufacturing Method for Same - A magnetic material sputtering target characterized in that, in a plane for observing the oxide in the target, oxide grains in the target have an average diameter of 1.5 μm or less, and that 60% or more of the oxide grains in the observing plane of the target have a difference between a maximum diameter and a minimum diameter of 0.4 μm or less, where the maximum diameter is a maximum distance between arbitrary two points on the periphery of an oxide grain, and the minimum diameter is a minimum distance between two parallel lines across the oxide grain. A non-magnetic grain dispersion-type magnetic material sputtering target that can inhibit abnormal discharge due to an oxide causing occurrence of particles during sputtering is obtained. | 01-22-2015 |