Patent application number | Description | Published |
20130177037 | SEMICONDUCTOR INTEGRATED DEVICE AND METHOD FOR PRODUCING THE SAME - A semiconductor integrated device includes a light-emitting portion including a first lower mesa, a first lower buried layer provided on a side surface of the first lower mesa, a first upper mesa provided above the first lower mesa, and a first upper buried layer provided on a side surface of the first upper mesa; and an optical modulator portion including a second lower mesa, a second lower buried layer provided on a side surface of the second lower mesa, a second upper mesa provided above the second lower mesa, and a second upper buried layer provided on a side surface of the second upper mesa. The first and second lower mesas include first and second core layers optically coupled to each other. The first and second lower buried layers are composed of a semi-insulating semiconductor. The first and second upper buried layers are composed of a resin material. | 07-11-2013 |
20130322808 | SEMICONDUCTOR MACH-ZEHNDER MODULATOR AND METHOD FOR MANUFACTURING SEMICONDUCTOR MACH-ZEHNDER MODULATORS - A semiconductor Mach-Zehnder modulator includes a substrate having a main surface including first, second and third regions sequentially arranged along a direction; a waveguide mesa including first and second waveguide arms provided on the second region, first and second optical couplers provided on the first and third regions, respectively; a first semiconductor protective layer provided on side surfaces of the first and second waveguide arms; a buried layer provided on side surfaces of the waveguide mesa and on the main surface, the buried layer including a material having a dielectric constant lower than that of the first protective layer; and first and second upper electrodes provided on the first and second waveguide arms, respectively. The first and second optical couplers are connected to the first and second waveguide arms. Above the second region, the buried layer is provided on the first protective layer. | 12-05-2013 |
20140021160 | METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE - A method for manufacturing an optical semiconductor device includes the steps of preparing a substrate product including a semiconductor layer, a mesa structure, and a protective layer; forming a buried layer composed of a resin on the substrate product; forming a first opening in the buried layer on the mesa structure; forming a second opening in the buried layer on the semiconductor layer; exposing the mesa structure and the semiconductor layer by etching the protective layer; forming a first electrode in the first opening; and forming a second electrode in the second opening. The step of forming the second opening includes a first etching step including etching the buried layer using a first resist mask for forming a recess and a second etching step including etching the buried layer using a second resist mask having an opening pattern which has an opening width not smaller than that of the recess. | 01-23-2014 |
20140070351 | METHOD FOR MANUFACTURING OPTICAL WAVEGUIDE RECEIVER AND OPTICAL WAVEGUIDE RECEIVER - A method for manufacturing an optical waveguide receiver includes the steps of growing first and second stacked semiconductor layer sections, the second stacked semiconductor layer section including a core layer and a cladding layer; forming a first mask including first and second portions; etching the first and second stacked semiconductor layer sections by using the first mask, the first and second stacked semiconductor layer sections covered with the first portion being etched in a mesa structure, the second stacked semiconductor layer section covered with the second portion being etched in a terrace-shaped structure; removing the second portion from the first mask with the first portion left; selectively etching the cladding layer until exposing a surface of the core layer; and sequentially forming a first metal layer, an insulating film, and a second metal layer on the core layer exposed in the step of selectively etching the cladding layer. | 03-13-2014 |
20140116983 | METHOD FOR PRODUCING OPTICAL SEMICONDUCTOR DEVICE - A method for producing an optical semiconductor device includes the steps of determining a wafer size to make a section arrangement including a plurality of sections in each of which the optical semiconductor device including a semiconductor mesa is formed; obtaining an in-plane distribution of a thickness of a resin layer on a wafer; obtaining a correlation between a thickness of a resin layer and a trench width; forming a trench width map using the in-plane distribution of the thickness and the correlation; preparing an epitaxial substrate by forming a stacked semiconductor layer; forming, on the epitaxial substrate, a mask based on the trench width map; forming a trench structure including the semiconductor mesa by etching the stacked semiconductor layer using the mask; forming a resin layer on the trench structure; and forming an opening on the semiconductor mesa by etching the resin layer. | 05-01-2014 |
20140246746 | OPTICAL-TO-ELECTRICAL CONVERTER UNIT AND SEMICONDUCTOR LIGHT-RECEIVING DEVICE - An optical-to-electrical converter unit includes a substrate having front and back surfaces; an optical waveguide unit; and an optical-to-electrical converter. The optical-to-electrical converter includes a light-receiving element optically coupled to the optical waveguide unit; a capacitance element including first and second conductive layers and an insulating layer disposed between the first and second conducive layers; an electrode pad electrically connected to the light-receiving element; a back electrode formed on the back surface of the substrate; and a via electrode extending from the front surface to the back surface of the substrate. The optical waveguide unit, the light-receiving element, the capacitance element, and the electrode pad are formed on the front surface. The first conductive layer of the capacitance element is electrically connected to the light-receiving element and the electrode pad. The second conductive layer of the capacitance element is electrically connected to the back electrode through the via electrode. | 09-04-2014 |
20140254998 | SEMICONDUCTOR OPTICAL WAVEGUIDE DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor optical waveguide device includes a substrate having a first area and a second area, and first, second, and semiconductor mesas on the substrate. The first semiconductor mesa includes a cladding layer and a first mesa portion on the second area, the first mesa portion including first and second portions. The second semiconductor mesa includes an intermediate layer, a first core layer, and first and second mesa portions on the first and second area, respectively. The third semiconductor mesa includes a second core layer, and first and second mesa portions having a greater width than that of the second semiconductor mesa. The first portion of the first semiconductor mesa has a substantially the same width as the second mesa portion of the second semiconductor mesa. The first core layer is optically coupled to the second core layer through the intermediate layer disposed between the first and second core layers. | 09-11-2014 |
20140291717 | METHOD FOR MANUFACTURING MACH-ZEHNDER MODULATOR, METHOD FOR MANUFACTURING OPTICAL WAVEGUIDE, AND OPTICAL WAVEGUIDE - A method for manufacturing a Mach-Zehnder modulator includes the steps of forming a stacked semiconductor layer, the stacked semiconductor layer including a first conductivity type semiconductor layer, a core layer and a second conductivity type semiconductor layer, forming a waveguide mesa, the waveguide mesa having a first portion, a second portion and a third portion arranged between the first and second portions; forming a buried region on the waveguide mesa; forming an opening in the buried region on the third portion by etching the buried region using a mask; etching the second conductivity type semiconductor layer in the third portion through the buried region as a mask; and removing the buried region after etching the second conductivity type semiconductor layer. In the step of etching the second conductivity type semiconductor layer, the buried region covers a side surface of the third portion of the waveguide mesa. | 10-02-2014 |
20140294335 | METHOD FOR MANUFACTURING SEMICONDUCTOR MODULATOR AND SEMICONDUCTOR MODULATOR - A method for manufacturing a semiconductor modulator includes the steps of preparing a substrate having a main surface including first and second areas; forming a stacked semiconductor layer on the main surface; forming an optical waveguide mesa by etching the stacked semiconductor layer using a mask, the optical waveguide mesa including an optical modulation portion; applying a resin on a top surface and a side surface of the optical waveguide mesa and on the substrate; forming a first opening in the resin on the second area of the substrate; forming an underlayer structure on the second area of the substrate in contact with the substrate; and forming a pad electrode on the underlayer structure in contact with the underlayer structure through the first opening of the resin. The underlayer structure includes an insulating layer made of a dielectric material. | 10-02-2014 |
20140335644 | METHOD FOR PRODUCING SPOT SIZE CONVERTER - A method for producing a spot size converter includes the steps of forming a first insulator mask on a stacked semiconductor layer; forming first and second terraces, and a waveguide mesa disposed between the first and second terraces by etching the stacked semiconductor layer using the first insulator mask, the first terrace having first to fourth terrace portions, the second terrace having fifth to eighth terrace portions, the waveguide mesa having first to fourth mesa portions; forming a second insulator mask including a first pattern on the first terrace portion, a second pattern on the fifth terrace portion, a third pattern on the third and fourth mesa portions, and a fourth pattern that integrally covers a region extending from the fourth terrace portion to the eighth terrace portion through the fourth mesa portion; and selectively growing a semiconductor layer by using the second insulator mask. | 11-13-2014 |
20140342491 | METHOD FOR MANUFACTURING WAVEGUIDE-TYPE SEMICONDUCTOR DEVICE - A method for manufacturing a waveguide-type semiconductor device includes the steps of forming an epitaxial structure including a waveguide mesa and a device mesa; forming a mask for selective growth on the epitaxial structure; growing a semiconductor region on an end surface of the device mesa by using the mask for selective growth, the semiconductor region including a side portion having a layer shape and a protruding wall portion; forming an ohmic electrode on a top surface of the device mesa; forming a resin layer on the device mesa and the semiconductor region; forming a resin mask having an opening on the ohmic electrode; forming an electric conductor connecting the ohmic electrode to an electrode pad, the electric conductor passing over the protruding wall portion while making contact with a surface of the resin mask; and removing the resin mask after forming the electric conductor. | 11-20-2014 |
20150023627 | METHOD FOR PRODUCING SEMICONDUCTOR OPTICAL DEVICE AND SEMICONDUCTOR OPTICAL DEVICE - A method for producing a semiconductor optical device includes the steps of forming first and second optical waveguides; forming a first resin layer on the first and the second optical waveguides; forming an opening in the first resin layer; forming a first electrode in the opening; forming a second resin layer on the first electrode and the first resin layer; forming a groove in the second resin layer on the first electrode; forming a second electrode on the second resin layer, a side surface of the groove, and the top surface of the first electrode; and forming a third electrode on the second electrode. The second and third electrodes have a region in which the second and third electrodes pass over the second optical waveguide, and, in the region, the first and second resin layers are disposed between the second electrode and the second optical waveguide. | 01-22-2015 |
20150024527 | METHOD FOR PRODUCING SPOT-SIZE CONVERTOR - A method for producing a spot-size convertor includes the steps of preparing a substrate; forming a stacked semiconductor layer including first and second core layers on the substrate; forming a mesa structure by etching the stacked semiconductor layer using a first mask, the mesa structure including a side surface and a bottom portion of the first core layer; forming a protective mask covering the side surface; etching the bottom portion using the protective mask to form a top mesa; and forming a bottom mesa by etching the second core layer using a second mask. The top mesa includes the first core layer and a portion having a mesa width gradually reduced in a first direction of a waveguide axis. The bottom mesa includes the second core layer and a portion having a mesa width gradually reduced in a second direction opposite to the first direction. | 01-22-2015 |
20150043867 | SEMICONDUCTOR OPTICAL DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE - A method for manufacturing a semiconductor optical device includes the steps of growing a stacked layer including lower and upper core layers, a first upper region including a non-doped layer, a second upper region including a p-type layer, and a cap layer; forming an upper mesa by etching the stacked layer; selectively etching the cap layer in the upper mesa on the first and second regions; forming a mask on the upper mesa in the second and third regions; and etching the upper mesa using the mask so as to form first to fourth mesa portions. The first and fourth mesa portions are formed by etching the first and second upper regions, and the second upper region and the cap layer, respectively. The second and third mesa portions are formed by etching the first and second upper regions, and the second upper region and the cap layer, respectively. | 02-12-2015 |