Patent application number | Description | Published |
20080258172 | INSULATED GATE BIPOLAR TRANSISTOR WITH BUILT-IN FREEWHEELING DIODE - An insulated gate bipolar transistor includes a first main electrode on a first main surface and in contact with a base region of an insulated gate transistor at the first main surface, a first semiconductor layer of a first conductivity type on a second main surface, a second semiconductor layer of a second conductivity type on the second main surface and vertically aligned with a region of the first main electrode in contact with the base region, and a second main electrode formed on the first and second semiconductor layers. An interface between the second main electrode and each of the first and second semiconductor layers is parallel to the first main surface, a distance between the first main surface and the interface is equal to 200 μm or smaller, and a thickness of each of the first and second semiconductor layers is equal to 2 μm or smaller. | 10-23-2008 |
20120016067 | RESIN COMPOSITION FOR SOLAR CELL-SEALING MATERIAL - To achieve improvement in initial conversion efficiency of solar cell modules, inhibition of deterioration in transparency of a resin, inhibition of degradation in adhesive properties with respect to a protective member over time, and inhibition of degradation in conversion efficiency. A resin composition for solar cell-sealing material according to the present invention includes an ethylene copolymer, and further includes at least one of: (i) a compound represented by the following general formula (1); (ii) a calcined product of the (i); (iii) a compound represented by the following general formula (2); and (iv) a calcined product of the (iii). The (i) has an average plate surface diameter of 0.01 to 0.9 μm and a refractive index of 1.45 to 1.55, and the (iii) has an average plate surface diameter of 0.02 to 0.9 μm and a refractive index of 1.48 to 1.6. | 01-19-2012 |
20120187087 | ETCHING SOLUTION COMPOSITION FOR METAL THIN FILM CONSISTING PRIMARILY OF COPPER - The problem of the present invention is to provide an etching solution composition that can etch with high accuracy a metal-laminated film pattern comprising thin films of copper and a copper alloy, can form an excellent pattern shape, and has practically excellent and stable characteristics with long solution life, and to provide an etching method using such etching solution composition. The present invention relates to an etching method for etching a metal-laminated film having a layer consisting of copper and a layer consisting of a copper alloy containing copper, using an etching solution composition comprising phosphoric acid, nitric acid, acetic acid and water, as well as to said etching solution composition. | 07-26-2012 |
20140360715 | RAIL COOLING METHOD - A rail cooling method includes: calculating, based on a relation between temperatures and an amount of warp of the rail cooled to ambient temperature after the forced cooling, the temperatures including a cooling start temperature of the head, a cooling end temperature of the head, a cooling start temperature of the foot and a cooling end temperature of the foot, a target value or a target value range for each of the temperatures so that the amount of warp of the rail at ambient temperature falls within a permissive range; and setting a cooling condition in accordance with the target value or the target value range to perform the forced cooling on the head and the foot. | 12-11-2014 |
20150021836 | RAIL HEAT TREATMENT DEVICE AND RAIL HEAT TREATMENT METHOD - A rail heat treatment device includes a cooling header, an oscillation mechanism, and a control system including: a storage unit that stores therein at least information required for a oscillation control; and a control unit that obtains a permissible range of required cooling time for a rail that satisfies a permissible range of hardness of the rail based on a correlation expression representing a correlation between the cooling time for the rail with the cooling header and the hardness of the rail after cooling, controls a stroke and a speed of relative reciprocation of the rail and the cooling header based on the permissible range of the required cooling time, and causes the oscillation mechanism to perform the relative reciprocation of the rail and the cooling header by the stroke and at the speed. | 01-22-2015 |
20150027599 | RAIL COOLING METHOD AND RAIL COOLING DEVICE - A rail cooling method for forcibly cooling a rail by jetting a coolant includes jetting the coolant to a foot back part of the rail from a porous plate nozzle in which a nozzle hole at an end in a width direction is smaller than a nozzle hole at a central part in the width direction and causes a cooling capacity for the end in the width direction of the underside of the base of the rail to be lower than a cooling capacity for the central part in the width direction of the underside of the base of the rail. | 01-29-2015 |
20150082611 | RAIL RESTRAINING METHOD AND RAIL RESTRAINING DEVICE - A rail restraining method for restraining a hot-rolled rail in an upright position at a time of forced cooling of a head portion and a foot portion of the rail includes defining a predetermined position within 2 meters from each of both end faces of the rail along a longitudinal direction of the rail as a first restraining position, defining a predetermined position 3 to 10 meters from the first restraining position in a direction toward center of the rail along the longitudinal direction of the rail as a second restraining position at the time of forced cooling, and restraining displacement of the rail in a vertical direction at the first restraining position and the second restraining position by a restraining force F (kN) that satisfies following Expression (1): | 03-26-2015 |
20160042754 | METAL MEMBER FOR MAGNETIC STORAGE MEDIUM AND MAGNETIC STORAGE MEDIUM - A metal member for magnetic storage medium includes an aluminum alloy substrate, and a nonmagnetic layer formed on at least one surface of the aluminum alloy substrate, and the nonmagnetic layer comprises a Ni—Cu—P based alloy containing 5 mass % to 50 mass % Cu and 100 ppm to 1000 ppm Pb. | 02-11-2016 |