Patent application number | Description | Published |
20100210064 | METHOD FOR MANUFACTURING CIS-BASED THIN FILM SOLAR CELL - In order to manufacture a CIS-based thin film solar cell that can achieve high photoelectric conversion efficiency by adding an alkali element to a light absorbing layer easily and with good controllability, a backside electrode layer ( | 08-19-2010 |
20100267190 | LAMINATED STRUCTURE FOR CIS BASED SOLAR CELL, AND INTEGRATED STRUCTURE AND MANUFACTURING METHOD FOR CIS BASED THIN-FILM SOLAR CELL - This invention aims to provide a laminated structure and an integrated structure of a high production efficiency for a CIS based thin-film solar cell, which can produce a high-resistance buffer layer of the CIS based thin-film solar cell efficiently on a series of production lines and which needs no treatment of wastes or the like, and a manufacturing method for the structures. The CIS based thin-film solar cell includes a back electrode, a p-type CIS based light absorbing layer, a high-resistance buffer layer and an n-type transparent conductive film laminated in this order. The high-resistance buffer layer and the n-type transparent conductive film are formed of thin films of a zinc oxide group. The buffer layer contacts the p-type CIS based light absorbing layer directly, and has a resistivity of 500 Ω·cm or higher. | 10-21-2010 |
20100311202 | PROCESS FOR PRODUCING LIGHT ABSORBING LAYER IN CIS BASED THIN-FILM SOLAR CELL - A treatment object containing any one of Cu/Ga, Cu/In and Cu—Ga/In is held in a heated state at a temperature T | 12-09-2010 |
20110011451 | INTEGRATED STRUCTURE OF CIS BASED SOLAR CELL - In an integrated structure of a CIS based thin film solar cell obtained by stacking an light absorbing layer, a high-resistance buffer layer, and a window layer in that order, a first buffer layer adjoining the light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), a second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, a third buffer layer is formed to cover the end face exposed by forming an interconnect pattern in the light absorbing layer, the first buffer layer, and the second buffer layer and the top end surface of the second buffer layer, and the third buffer layer is made of a zinc oxide-based thin film. | 01-20-2011 |
20110018089 | STACK STRUCTURE AND INTEGRATED STRUCTURE OF CIS BASED SOLAR CELL - In a stack structure of a CIS based thin film solar cell obtained by stacking a p-type CIS light absorbing layer, a buffer layer, and an n-type transparent conductive film in that order, the buffer layer has a stack structure of two or more layers including first and second buffer layers, the first buffer layer adjoining the p-type light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), the second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, the first buffer layer has a thickness equal to or smaller than 20 nm, and the second buffer layer has a thickness equal to or larger than 100 nm | 01-27-2011 |
20110067755 | METHOD FOR MANUFACTURING CIS-BASED THIN FILM SOLAR CELL - A method of manufacturing a CIS-based thin film solar cell that achieves high photoelectric conversion efficiency comprises: forming a backside electrode layer on a substrate; forming a p-type CIS-based light absorbing layer thereon; and further forming an n-type transparent and electrically conductive film. The above-mentioned forming a p-type CIS-based light absorbing layer comprises: forming a metal precursor film ( | 03-24-2011 |
20120118384 | CIS-BASED THIN FILM SOLAR CELL - In order to provide a CIS-based thin film solar cell having high photoelectric conversion efficiency, this CIS-based thin film solar cell is laminated in order of a high distortion point glass substrate ( | 05-17-2012 |
20120258562 | METHOD OF PRODUCTION OF CIS-BASED THIN FILM SOLAR CELL - A method of production of a CIS-based thin film solar cell comprises the steps of forming an alkali control layer on a high strain point glass substrate, forming a back surface electrode layer on the alkali control layer, forming a CIS-based light absorption layer on the back surface electrode layer, and forming an n-type transparent conductive film on the CIS-based light absorption layer, wherein the alkali control layer is formed to a thickness which allows heat diffusion of the alkali metal which is contained in the high strain point glass substrate to the CIS-based light absorption layer and, furthermore, the CIS-based light absorption layer has an alkali metal added to it from the outside in addition to heat diffusion from the high strain point glass substrate. | 10-11-2012 |
20130074925 | THIN FILM SOLAR CELL - Disclosed is a thin-film solar cell which has a high photoelectric conversion efficiency and is provided with a substrate ( | 03-28-2013 |