Patent application number | Description | Published |
20090114245 | IN-SITU CHAMBER CLEANING METHOD - An in-situ chamber cleaning method is performed in a chamber having a gas-distributing member, wherein the gas-distributing member comprises a plurality of apertures. A cleaning gas flow is provided through some of the apertures into the chamber while no cleaning gas flow is provided through the remaining apertures. The cleaning gas flow is ionized such that ionized cleaning gas radicals are used to clean the chamber. | 05-07-2009 |
20100024840 | CHAMBER PLASMA-CLEANING PROCESS SCHEME - A method for plasma-cleaning a chamber in a process tool is described. A substrate is placed on a chuck in a process chamber having a set of contaminants therein. A plasma process is executed in the process chamber to transfer the set of contaminants to the top surface of the substrate. The substrate, having the set of contaminants thereon, is removed from the process chamber. | 02-04-2010 |
20100273318 | SUBSTRATE PRETREATMENT FOR SUBSEQUENT HIGH TEMPERATURE GROUP III DEPOSITIONS - Embodiments of the present invention relate to apparatus and method for pretreatment of substrates for manufacturing devices such as light emitting diodes (LEDs) or laser diodes (LDs). One embodiment of the present invention comprises pre-treating the aluminum oxide containing substrate by exposing a surface of the aluminum oxide containing substrate to a pretreatment gas mixture, wherein the pretreatment gas mixture comprises ammonia (NH | 10-28-2010 |
20100279020 | METHOD OF FORMING IN-SITU PRE-GaN DEPOSITION LAYER IN HVPE - A method and apparatus is provided for preparing a substrate for forming electronic devices incorporating III/V compound semiconductors. Elemental halogen gases, hydrogen halide gases, or other halogen or halide gases, are contacted with liquid or solid group III metals to form precursors which are reacted with nitrogen sources to deposit a nitride buffer layer on the substrate. The buffer layer, which may be a transition layer, may incorporate more than one group III metal, and may be deposited with amorphous or crystalline morphology. An amorphous layer may be partially or fully recrystallized by thermal treatment. Instead of a layer, a plurality of discrete nucleation sites may be formed, whose size, density, and distribution may be controlled. The nitrogen source may include reactive nitrogen compounds as well as active nitrogen from a remote plasma source. The composition of the buffer or transition layer may also vary with depth according to a desired profile. | 11-04-2010 |
20110012109 | METHOD OF FORMING A GROUP III-NITRIDE CRYSTALLINE FILM ON A PATTERNED SUBSTRATE BY HYDRIDE VAPOR PHASE EPITAXY (HVPE) - A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group III-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group III-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation. | 01-20-2011 |
20110140071 | NANO-SPHERICAL GROUP III-NITRIDE MATERIALS - Nano-spherical group III-nitride materials and methods of forming nano-spherical group III-nitride materials are described. Also described is a 1-dimensional LED or similar device formed from a single nano-rod of a nano-spherical group III-nitride material. | 06-16-2011 |
20110263111 | GROUP III-NITRIDE N-TYPE DOPING - Group III-nitride N-type doping techniques are described. | 10-27-2011 |
20120156863 | SUBSTRATE PRETREATMENT FOR SUBSEQUENT HIGH TEMPERATURE GROUP III DEPOSITIONS - Embodiments of the present invention relate to apparatus and method for pretreatment of substrates for manufacturing devices such as light emitting diodes (LEDs) or laser diodes (LDs). One embodiment of the present invention comprises pretreating the aluminum oxide containing substrate by exposing a surface of the aluminum oxide containing substrate to a pretreatment gas mixture, wherein the pretreatment gas mixture comprises ammonia (NH | 06-21-2012 |
20120235116 | LIGHT EMITTING DIODE WITH ENHANCED QUANTUM EFFICIENCY AND METHOD OF FABRICATION - One embodiment of a quantum well structure comprises an active region including active layers that comprise quantum wells and barrier layers wherein some or all of the active layers are p type doped. P type doping some or all of the active layers improves the quantum efficiency of III-V compound semiconductor light emitting diodes by locating the position of the P-N junction in the active region of the device thereby enabling the dominant radiative recombination to occur within the active region. In one embodiment, the quantum well structure is fabricated in a cluster tool having a hydride vapor phase epitaxial (HVPE) deposition chamber with a eutectic source alloy. In one embodiment, the indium gallium nitride (InGaN) layer and the magnesium doped gallium nitride (Mg—GaN) or magnesium doped aluminum gallium nitride (Mg—AlGaN) layer are grown in separate chambers by a cluster tool to avoid indium and magnesium cross contamination. Doping of group III-nitrides by hydride vapor phase epitaxy using group III-metal eutectics is also described. In one embodiment, a source is provided for HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the source including a liquid phase mechanical (eutectic) mixture with a group III species. In one embodiment, a method is provided for performing HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the method including using a liquid phase mechanical (eutectic) mixture with a group III species. | 09-20-2012 |
20120291698 | METHODS FOR IMPROVED GROWTH OF GROUP III NITRIDE SEMICONDUCTOR COMPOUNDS - Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off. | 11-22-2012 |
20120295418 | METHODS FOR IMPROVED GROWTH OF GROUP III NITRIDE BUFFER LAYERS - Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN). | 11-22-2012 |
20120295428 | METHODS FOR PRETREATMENT OF GROUP III-NITRIDE DEPOSITIONS - Embodiments of the present disclosure relate to methods for pretreatment of substrates and group III-nitride layers for manufacturing devices such as light emitting diodes (LEDs), laser diodes (LDs) or power electronic devices. One embodiment of the present disclosure provides a method including providing one or more substrates having an aluminum containing surface in a processing chamber and exposing a surface of each of the one or more substrates having an aluminum containing surface to a pretreatment gas mixture to form a pretreated surface. The pretreatment gas mixture includes ammonia (NH | 11-22-2012 |
20130320353 | METHOD OF FORMING A GROUP III-NITRIDE CRYSTALLINE FILM ON A PATTERNED SUBSTRATE BY HYDRIDE VAPOR PHASE EPITAXY (HVPE) - A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group III-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group III-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation. | 12-05-2013 |