Patent application number | Description | Published |
20080237665 | Semiconductor device and electronic device - The present invention relates to a semiconductor device which includes a photoelectric conversion layer; an amplifier circuit amplifying an output current of the photoelectric conversion layer and including two thin film transistors; a first terminal supplying a high-potential power supply voltage; a second terminal supplying a low-potential power supply voltage; an electrode electrically connecting the two thin film transistors and the photoelectric conversion layer; a first wiring electrically connecting the first terminal and a first thin film transistor which is one of the two thin film transistors; and a second wiring electrically connecting the second terminal and a second thin film transistor which is the other of the two thin film transistors. In the semiconductor device, the value of voltage drop of the first wiring and the second wiring are increased by bending the first wiring and the second wiring. | 10-02-2008 |
20090027372 | PHOTOELECTRIC CONVERSION DEVICE AND ELECTRONIC DEVICE HAVING THE SAME - A plurality of transistors in which ratios of a channel length L to a channel width W, α=W/L, are different from each other is provided in parallel as output side transistors | 01-29-2009 |
20090230292 | PROTECTION CIRCUIT AND PHOTOELECTRIC CONVERSION DEVICE - A protection circuit and a photoelectric conversion device are provided, each of which includes a first wiring, a second wiring, a first switch, a second switch, a capacitor, and a comparing circuit configured to generate a signal corresponding to a potential of the first wiring and a potential of the second wiring, and supply the signal to the first switch and the second switch. The first wiring is electrically connected to a first terminal of the first switch, and the second wiring is electrically connected to a first terminal of the second switch. A second terminal of the first switch is electrically connected to a first electrode of the capacitor, and a second terminal of the second switch is electrically connected to a second electrode of the capacitor. | 09-17-2009 |
20090231021 | Semiconductor Device - An element is protected without hampering an actual operation in the case where overvoltage that might damage the element is applied. A semiconductor device includes a first potential supply terminal | 09-17-2009 |
20090261444 | SEMICONDUCTOR DEVICE - A wiring electrically connected to a terminal to which a high power supply potential is applied and a wiring electrically connected to a terminal to which a low power supply potential is applied are formed adjacent to each other and are formed so as to surround the integrated circuit. Thus, wiring resistance can be added between the terminals and the integrated circuit and capacitance can be added between the two wirings. Even if overvoltage is applied to the terminals due to ESD or the like, the energy of the overvoltage is consumed by the wiring resistance and the added capacitor, so that damage of the integrated circuit can be suppressed. | 10-22-2009 |
20090289174 | PHOTOELECTRIC CONVERSION DEVICE, DRIVING METHOD THEREOF, AND ELECTRONIC DEVICE PROVIDED WITH THE SAME - Objects are to accumulate electric charge in a capacitor so that light intensity can be detected even when the amount of incident light is small, and to operate a photoelectric conversion device without increasing the number of elements such as a constant current source or a switch. The photoelectric conversion device includes a photoelectric conversion circuit, a capacitor, and a comparator for comparing a potential of one electrode of the capacitor with a second potential. The photoelectric conversion circuit includes a photoelectric conversion element and an amplifier circuit for amplifying an output current from the photoelectric conversion element In the capacitor, a first potential is supplied through a first switch, and charging or discharging is performed through a second switch in accordance with the current amplified by the amplifier circuit. | 11-26-2009 |
20090310265 | SEMICONDUCTOR DEVICE - The resistance of an integrated circuit against ESD (electrostatic discharge) is improved without disturbing improvement of the performance and reduction of size of the integrated circuit. A protection circuit is interposed between an input and output terminals. When ESD is generated, the input and output terminals are short-circuited by the protection circuit, so that overvoltage application to the circuit is prevented. The circuit is electrically connected to the input and output terminals by a connection wiring. The circuit has a plurality of electrical connection portions between the circuit and the connection wiring, and the connection wiring is formed such that the wiring resistance between the input or output terminal and each of the connection portions is the same. Accordingly, if ESD is generated, voltage application on only one of the connection portions is prevented, whereby the possibility that the circuit will be broken by ESD is decreased. | 12-17-2009 |
20090321869 | SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - A semiconductor device has a structure including the first semiconductor region | 12-31-2009 |
20100006848 | SEMICONDUCTOR DEVICE - To improve the performance of a protection circuit including a diode formed using a semiconductor film. A protection circuit is inserted between two input/output terminals. The protection circuit includes a diode which is formed over an insulating surface and is formed using a semiconductor film. Contact holes for connecting an n-type impurity region and a p-type impurity region of the diode to a first conductive film in the protection circuit are distributed over the entire impurity regions. Further, contact holes for connecting the first conductive film and a second conductive film in the protection circuit are dispersively formed over the semiconductor film. By forming the contact holes in this manner wiring resistance between the diode and a terminal can be reduced and the entire semiconductor film of the diode can be effectively serve as a rectifier element. | 01-14-2010 |
20100073406 | Display Device, and Driving Method and Electronic Apparatus of the Display Device - The present invention provides a driving method of a display device for expressing gray scales with n bits (n is an integer) by dividing one frame into a plurality of subframes. By this driving method, pseudo contours which occur in displaying images by a time gray scale method can be reduced. | 03-25-2010 |
20100202090 | PROTECTION CIRCUIT, SEMICONDUCTOR DEVICE, PHOTOELECTRIC CONVERSION DEVICE, AND ELECTRONIC DEVICE - It is an object to provide a protection circuit and a semiconductor device to which a countermeasure against ESD is applied. The protection circuit includes a signal line electrically connected to an integrated circuit; a first diode provided between the signal line and a first power supply line; a second diode provided in parallel to the first diode; and a third diode provided between the first power supply line and a second power supply line. The first diode is a diode formed by diode-connecting a transistor, and the second diode is a diode having a PIN junction or a PN junction. The protection circuit is particularly effective when applied to a semiconductor device manufactured using a thin film transistor. | 08-12-2010 |
20100244029 | SEMICONDUCTOR DEVICE - The threshold voltage is shifted in a negative or positive direction in some cases by an unspecified factor in a manufacturing process of the thin film transistor. If the amount of shift from 0 V is large, driving voltage is increased, which results in an increase in power consumption of a semiconductor device. Thus, a resin layer having good flatness is formed as a first protective insulating film covering the oxide semiconductor layer, and then a second protective insulating film is formed by a sputtering method or a plasma CVD method under a low power condition over the resin layer. Further, in order to adjust the threshold voltage to a desired value, gate electrodes are provided over and below an oxide semiconductor layer. | 09-30-2010 |
20100245219 | DISPLAY DEVICE AND DRIVING METHOD OF DISPLAY DEVICE - One feature of the present invention includes first to third steps of holding a voltage, corresponding to a difference between a voltage applied to a first power supply line and a threshold voltage of a first transistor, between both electrodes of first and second storage capacitors; holding a voltage, corresponding to a difference between a voltage applied to the first power supply line and a gate-source voltage of the first transistor, which is necessary to supply a light-emitting element with a current equivalent to a video signal current inputted into a signal line, between both the electrodes of the second storage capacitor; and applying a voltage based on the voltage held in the first and second storage capacitors in the first and second steps to a gate electrode of the first transistor; therefore, a current is supplied to the light-emitting element through the first transistor. | 09-30-2010 |
20100277671 | Display Device - A cooling device is provided, where an LED backlight can be efficiently cooled in order to suppress display unevenness caused by heat generated from the LED backlight. In addition, a display device including the cooling device is also provided. A display device is provided, where the LED backlight can be cooled by arranging a coolant pipe on a back surface side of the LED backlight and supplying a coolant to a coolant pipe. Further, a display device is provided, where cooling efficiency of the LED backlight can be more improved by arranging a thermal conductor between the LED backlight and the cooling device. | 11-04-2010 |
20100328916 | SEMICONDUCTOR DEVICE - A protection circuit used for a semiconductor device is made to effectively function and the semiconductor device is prevented from being damaged by a surge. A semiconductor device includes a terminal electrode, a protection circuit, an integrated circuit, and a wiring electrically connecting the terminal electrode, the protection circuit, and the integrated circuit. The protection circuit is provided between the terminal electrode and the integrated circuit. The terminal electrode, the protection circuit, and the integrated circuit are connected to one another without causing the wiring to branch. It is possible to reduce the damage to the semiconductor device caused by electrostatic discharge. It is also possible to reduce faults in the semiconductor device. | 12-30-2010 |
20110068334 | SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device which consumes low power and has high reliability and tolerance for electrostatic discharge. The semiconductor device includes, over a first substrate, a pixel portion and a driver circuit portion both of which have a thin film transistor having an oxide semiconductor layer. The semiconductor device further possesses a second substrate to which a first counter electrode layer and a second counter electrode layer are provided, and a liquid crystal layer is interposed between the first and second substrates. The first and second counter electrode layers are provided over the pixel portion and the driver circuit portion, respectively, and the second counter electrode layer has the same potential as the first counter electrode layer. | 03-24-2011 |
20110084265 | LIGHT-EMITTING DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME - An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other. | 04-14-2011 |
20110085104 | LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME - An object is to provide a liquid crystal display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The liquid crystal display device includes a plurality of pixels each including a thin film transistor and a pixel electrode. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The pixel electrode and the oxide semiconductor layer overlap with each other. | 04-14-2011 |
20110090416 | LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME - A liquid crystal display device is provided in which the aperture ratio can be increased in a pixel including a thin film transistor in which an oxide semiconductor is used. In the liquid crystal display device, the thin film transistor including a gate electrode, a gate insulating layer and an oxide semiconductor layer which are provided so as to overlap with the gate electrode, and a source electrode and a drain electrode which overlap part of the oxide semiconductor layer is provided between a signal line and a pixel electrode which are provided in a pixel portion. The off-current of the thin film transistor is 1×10 | 04-21-2011 |
20110122164 | Display Device and Driving Method and Electronic Apparatus of the Display Device - To reduce a pseudo contour which occurs when displaying by a time gray scale method. When gradation is expressed with an n bit, bits each of which is shown by a binary of the gray scales are divided into three bit groups, and one frame is divided into two subframe groups. Then, a (0 | 05-26-2011 |
20110175670 | SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - To suppress variation of a signal in a semiconductor device. By suppressing the variation, formation of a stripe pattern in displaying an image on a semiconductor device can be suppressed, for example. A distance between two adjacent signal lines which go into a floating state in different periods (G | 07-21-2011 |
20110181631 | DISPLAY DEVICE AND DRIVING METHOD THEREOF - A pixel is divided into m (m is an integer of m≧2) sub-pixels, and an area ratio of an s-th (s is an integer of 1 to m) sub-pixel is to be 2 | 07-28-2011 |
20110216876 | PULSE SIGNAL OUTPUT CIRCUIT AND SHIFT REGISTER - An object is to provide a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit. A pulse signal output circuit according to one embodiment of the disclosed invention includes first to tenth transistors. The ratio W/L of the channel width W to the channel length L of the first transistor and W/L of the third transistor are each larger than W/L of the sixth transistor. W/L of the fifth transistor is larger than W/L of the sixth transistor. W/L of the fifth transistor is equal to W/L of the seventh transistor. W/L of the third transistor is larger than W/L of the fourth transistor. With such a structure, a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit can be provided. | 09-08-2011 |
20110269060 | Photomask - A photomask is provided, with which the roundness of a corner portion of a resist mask can be reduced in a photolithography step. Further, a method for manufacturing a semiconductor device with less variation is provided. A photomask includes an auxiliary pattern at a corner portion of a light-blocking portion, and (k+1) sides (k is a natural number of 3 or more) form k obtuse angles in the auxiliary pattern. Alternatively, a photomask includes an auxiliary pattern at a corner portion of a light-blocking portion, and the auxiliary pattern includes a zigzag curve. | 11-03-2011 |
20120001881 | DRIVING METHOD OF LIQUID CRYSTAL DISPLAY DEVICE - An object is to provide a driving method of a liquid crystal display device with a low power consumption and a high image quality. A pixel includes a liquid crystal element and a transistor which controls supply of an image signal to the liquid crystal element. The transistor includes, in a channel formation region, a semiconductor which has a wider band gap than a silicon semiconductor and has a lower intrinsic carrier density than silicon, and has an extremely low off-state current. In inversion driving of pixels, image signals having opposite polarities are input to a pair of signal lines between which a pixel electrode is disposed. By employing such a structure, the quality of the displayed image can be increased even in the absence of a capacitor in the pixel. | 01-05-2012 |
20120132965 | Photoelectric Conversion Device And Electronic Device Having The Same - A plurality of transistors in which ratios of a channel length L to a channel width W, α=W/L, are different from each other is provided in parallel as output side transistors | 05-31-2012 |
20120154456 | DISPLAY DEVICE, DRIVING METHOD OF DISPLAY DEVICE, AND ELECTRONIC APPLIANCE - A semiconductor device including a plurality of pixels over a substrate and a display medium including an electronic ink over the substrate, in which at least one pixel of the plurality of pixels comprises first and second subpixels each of which comprises a transistor that comprises an oxide semiconductor including indium, and in which one image of at least one of the plurality of pixels is displayed by a plurality of signals, is provided. | 06-21-2012 |
20120194749 | DISPLAY DEVICE AND METHOD FOR DRIVING THE SAME - It is an object to provide a display device in which a problem of light leakage from a liquid crystal element in black display is reduced or overcome and the contrast is improved. It is another object to provide a pixel circuit having a function to control a lighting state of a backlight based on each pixel. These objects are achieved by turning off a light-emitting element in display of a black gray scale, and by providing a light-emitting element in each pixel and providing, in a pixel circuit, a function to individually control lighting and non-lighting of the light-emitting element depending on a gray scale to perform display. When a backlight is provided in each pixel, a light-emitting element that is a backlight is turned off when a black gray scale is displayed, whereby reduction in contrast due to light leakage from a liquid crystal element can be prevented. | 08-02-2012 |
20120211749 | SEMICONDUCTOR DEVICE - To improve the performance of a protection circuit including a diode formed using a semiconductor film. A protection circuit is inserted between two input/output terminals. The protection circuit includes a diode which is formed over an insulating surface and is formed using a semiconductor film. Contact holes for connecting an n-type impurity region and a p-type impurity region of the diode to a first conductive film in the protection circuit are distributed over the entire impurity regions. Further, contact holes for connecting the first conductive film and a second conductive film in the protection circuit are dispersively formed over the semiconductor film. By forming the contact holes in this manner, wiring resistance between the diode and a terminal can be reduced and the entire semiconductor film of the diode can be effectively serve as a rectifier element. | 08-23-2012 |
20130021239 | DISPLAY DEVICE - A display device includes a display panel including a plurality of pixels, a shutter panel including a driver circuit, a liquid crystal, and light-transmitting electrodes provided in a striped manner, and a positional data detector configured to detect a positional data of a viewer. The shutter panel is provided over a display surface side of the display panel, a width of one of the light-transmitting electrodes in the shutter panel is smaller than that of one of the plurality of pixels, and the driver circuit in the shutter panel is configured to selectively output signals for forming a parallax barrier to the light-transmitting electrodes. The parallax barrier is capable of changing its shape in accordance with the detected positional data. | 01-24-2013 |
20130250529 | PULSE SIGNAL OUTPUT CIRCUIT AND SHIFT REGISTER - An object is to provide a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit. A pulse signal output circuit according to one embodiment of the disclosed invention includes first to tenth transistors. The ratio W/L of the channel width W to the channel length L of the first transistor and W/L of the third transistor are each larger than W/L of the sixth transistor. W/L of the fifth transistor is larger than W/L of the sixth transistor. W/L of the fifth transistor is equal to W/L of the seventh transistor. W/L of the third transistor is larger than W/L of the fourth transistor. With such a structure, a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit can be provided. | 09-26-2013 |
20130292679 | Light-Emitting Display Device And Electronic Device Including The Same - An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other. | 11-07-2013 |
20140034954 | SEMICONDUCTOR DEVICE - To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor where a dielectric film is provided between a pair of electrodes, an insulating film provided over the light-transmitting semiconductor film, and a light-transmitting conductive film provided over the insulating film. In the capacitor, a metal oxide film containing at least indium (In) or zinc (Zn) and formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the light-transmitting conductive film serves as the other electrode, and the insulating film provided over the light-transmitting semiconductor film serves as the dielectric film. | 02-06-2014 |
20140070209 | SEMICONDUCTOR DEVICE - A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant. | 03-13-2014 |
20140078440 | SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device which consumes low power and has high reliability and tolerance for electrostatic discharge. The semiconductor device includes, over a first substrate, a pixel portion and a driver circuit portion both of which have a thin film transistor having an oxide semiconductor layer. The semiconductor device further possesses a second substrate to which a first counter electrode layer and a second counter electrode layer are provided, and a liquid crystal layer is interposed between the first and second substrates. The first and second counter electrode layers are provided over the pixel portion and the driver circuit portion, respectively, and the second counter electrode layer has the same potential as the first counter electrode layer. | 03-20-2014 |
20140104262 | LIQUID CRYSTAL DISPLAY DEVICE AND DRIVING METHOD THEREOF - In a video voltage comparator circuit, an average of first video voltages applied to pixel electrodes of pixels in the second-half rows in a k-th frame period (k is a natural number) is compared with an average of second video voltages applied to pixel electrodes of pixels in the first-half rows in a (k+1)th frame period for each row. In an overdrive voltage switching circuit, when a difference obtained from the comparison in the video voltage comparator circuit is greater than or equal to a threshold value, the overdrive voltage in the (k+1)th frame period is switched to a first overdrive voltage, and when the difference obtained from the comparison in the video voltage comparator circuit is less than the threshold value, the overdrive voltage in the (k+1)th frame period is switched to a second overdrive voltage lower than the first overdrive voltage. | 04-17-2014 |
20140152712 | DISPLAY DEVICE AND DRIVING METHOD OF DISPLAY DEVICE - It is an object of the present invention to reduce a cause of pseudo contour when display is performed with a time gray scale method. According to the present invention, one pixel is divided into m sub-pixels so that an area ratio of each sub-pixel becomes 2 | 06-05-2014 |
20140175432 | SEMICONDUCTOR DEVICE - A semiconductor device includes a transistor including an insulating film, an oxide semiconductor film, a gate electrode overlapping with the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film; a capacitor including a first light-transmitting conductive film over the insulating film, a dielectric film over the first light-transmitting conductive film, and a second light-transmitting conductive film over the dielectric film; an oxide insulating film over the pair of electrodes of the transistor; and a nitride insulating film over the oxide insulating film. The dielectric film is the nitride insulating film, the oxide insulating film has a first opening over one of the pair of electrodes, the nitride insulating film has a second opening over the one of the pair of electrodes, and the second opening is on an inner side than the first opening. | 06-26-2014 |
20140240631 | DISPLAY DEVICE AND ELECTRONIC DEVICE - Transistors each include a gate electrode, a gate insulating layer over the gate electrode, an oxide semiconductor layer over the gate insulating layer, and a source electrode and a drain electrode over the oxide semiconductor layer. A driver circuit portion includes first to third wirings formed in the same step as the gate electrode, fourth to sixth wirings formed in the same step as the source electrode and the drain electrode, a seventh wiring formed in the same step as a pixel electrode, a first region where the second wiring intersects with the fifth wiring, and a second region where the third wiring intersects with the sixth wiring. The first wiring is connected to the fourth wiring through the seventh wiring. A distance between the wirings in the second region is longer than that in the first region. | 08-28-2014 |
20140301045 | PULSE SIGNAL OUTPUT CIRCUIT AND SHIFT REGISTER - An object is to provide a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit. A pulse signal output circuit according to one embodiment of the disclosed invention includes first to tenth transistors. The ratio W/L of the channel width W to the channel length L of the first transistor and W/L of the third transistor are each larger than W/L of the sixth transistor. W/L of the fifth transistor is larger than W/L of the sixth transistor. W/L of the fifth transistor is equal to W/L of the seventh transistor. W/L of the third transistor is larger than W/L of the fourth transistor. With such a structure, a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit can be provided. | 10-09-2014 |
20140306241 | Light-Emitting Device - In a light-emitting device where reflective electrodes are regularly arranged, occurrence of interference fringes due to reflection of light reflected by the reflective electrode is inhibited. A surface of the reflective electrode of a light-emitting element is provided with a plurality of depressions. The shapes of the plurality of depressions are different from each other and do not have rotational symmetry. Irregularity of the surface shape of the reflective electrode is increased, which inhibits interference of light reflected by the reflective electrode. To form the plurality of depressions in the surface of the reflective electrode, for example, a surface of an insulating layer that is a base of the reflective electrode is made uneven. Reflecting the surface shape of the insulating layer, the reflective electrode has an uneven surface. | 10-16-2014 |
20140339553 | SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - To suppress variation of a signal in a semiconductor device. By suppressing the variation, formation of a stripe pattern in displaying an image on a semiconductor device can be suppressed, for example. A distance between two adjacent signal lines which go into a floating state in different periods (G1) is longer than a distance between two adjacent signal lines which go into a floating state in the same period (G0, G2). Consequently, variation in potential of a signal line due to capacitive coupling can be suppressed. For example, in the case where the signal line is a source signal line in an active matrix display device, formation of a stripe pattern in a displayed image can be suppressed. | 11-20-2014 |
20140361959 | DISPLAY DEVICE - In a display element such as an organic EL element, deterioration progresses due to light emission, and emission luminance is lowered even if the same voltage is applied to the display element. Therefore, use over time causes variations in luminance of each pixel, thereby a so-called “image burn-in” phenomenon occurs. Given this factor, the invention provides a display device which can reduce the difference in deterioration of a display element in each pixel and suppress variations in light emission of a display element in a pixel. It is prevented that only a specific pixel has a long accumulated lighting time. For that purpose, a gray scale of a display pattern is changed to prevent the difference in deterioration of display element in pixels from increasing. Alternatively, a specific display pattern is prevented from being fixedly displayed in a specific region. Further alternatively, a pixel lagging behind in deterioration is deteriorated so that the accumulated lighting time of pixels is equal to each other. | 12-11-2014 |
20140374754 | SEMICONDUCTOR DEVICE - A protection circuit used for a semiconductor device is made to effectively function and the semiconductor device is prevented from being damaged by a surge. A semiconductor device includes a terminal electrode, a protection circuit, an integrated circuit, and a wiring electrically connecting the terminal electrode, the protection circuit, and the integrated circuit. The protection circuit is provided between the terminal electrode and the integrated circuit. The terminal electrode, the protection circuit, and the integrated circuit are connected to one another without causing the wiring to branch. It is possible to reduce the damage to the semiconductor device caused by electrostatic discharge. It is also possible to reduce faults in the semiconductor device. | 12-25-2014 |
20150034831 | IMAGING DEVICE AND OPERATION METHOD THEREOF - Provided is an imaging device that can correct an output value of a pixel circuit. The imaging device includes a pixel circuit, a current detection circuit, an A/D converter, one or more memory circuit portions, and an arithmetic circuit portion. The pixel circuit includes a transistor, a charge accumulation portion, and a light-receiving element. The memory circuit portion includes a first look-up table, a second look-up table, and a region where image data output from the arithmetic circuit portion is stored. The first look-up table stores data of potentials of the charge accumulation portion, which depends on the intensity of light. The second look-up table stores output data of the transistor, which depends on the potentials of the charge accumulation portion. | 02-05-2015 |
20150042545 | DISPLAY DEVICE AND DRIVING METHOD THEREOF - A pixel is divided into m (m is an integer of m≧2) sub-pixels, and an area ratio of an s-th (s is an integer of 1 to m) sub-pixel is to be 2 | 02-12-2015 |
20150053979 | DISPLAY DEVICE, DRIVING METHOD OF DISPLAY DEVICE, AND ELECTRONIC APPLIANCE - A semiconductor device including a plurality of pixels over a substrate and a display medium including an electronic ink over the substrate, in which at least one pixel of the plurality of pixels comprises first and second subpixels each of which comprises a transistor that comprises an oxide semiconductor including indium, and in which one image of at least one of the plurality of pixels is displayed by a plurality of signals, is provided. | 02-26-2015 |
20150060845 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first and a second conductive films over an insulating surface; a first insulating film over the insulating surface and the first and the second conductive films; a semiconductor film overlapping with the first conductive film with the first insulating film provided therebetween; a third conductive film in contact with the semiconductor film; a fourth conductive film in contact with the semiconductor film and overlapping with the second conductive film with the first insulating film provided therebetween; a second insulating film including a thick region and a thin region, over the semiconductor film and the third and the fourth conductive films; a fifth conductive film overlapping with the semiconductor film with the second insulating film provided therebetween; and a sixth conductive film overlapping with the fourth conductive film over the thin region of the second insulating film. | 03-05-2015 |