Patent application number | Description | Published |
20100173768 | METHOD OF FORMING ALUMINUM OXYNITRIDE MATERIAL AND BODIES FORMED BY SUCH METHODS - Methods of forming aluminum oxynitride (AlON) materials include sintering green bodies comprising aluminum orthophosphate or another sacrificial material therein. Such green bodies may comprise aluminum, oxygen, and nitrogen in addition to the aluminum orthophosphate. For example, the green bodies may include a mixture of aluminum oxide, aluminum nitride, and aluminum orthophosphate or another sacrificial material. Additional methods of forming aluminum oxynitride (AlON) materials include sintering a green body including a sacrificial material therein, using the sacrificial material to form pores in the green body during sintering, and infiltrating the pores formed in the green body with a liquid infiltrant during sintering. Bodies are formed using such methods. | 07-08-2010 |
20100248930 | COMPOSITE MATERIALS AND BODIES INCLUDING SILICON CARBIDE AND TITANIUM DIBORIDE AND METHODS OF FORMING SAME - Methods of forming composite materials include coating particles of titanium dioxide with a substance including boron (e.g., boron carbide) and a substance including carbon, and reacting the titanium dioxide with the substance including boron and the substance including carbon to form titanium diboride. The methods may be used to form ceramic composite bodies and materials, such as, for example, a ceramic composite body or material including silicon carbide and titanium diboride. Such bodies and materials may be used as armor bodies and armor materials. Such methods may include forming a green body and sintering the green body to a desirable final density. Green bodies formed in accordance with such methods may include particles comprising titanium dioxide and a coating at least partially covering exterior surfaces thereof, the coating comprising a substance including boron (e.g., boron carbide) and a substance including carbon. | 09-30-2010 |
20110011254 | METHODS OF PRODUCING ARMOR SYSTEMS, AND ARMOR SYSTEMS PRODUCED USING SUCH METHODS - An armor system and method involves providing a core material and a stream of atomized coating material that comprises a liquid fraction and a solid fraction. An initial layer is deposited on the core material by positioning the core material in the stream of atomized coating material wherein the solid fraction of the stream of atomized coating material is less than the liquid fraction of the stream of atomized coating material on a weight basis. An outer layer is then deposited on the initial layer by positioning the core material in the stream of atomized coating material wherein the solid fraction of the stream of atomized coating material is greater than the liquid fraction of the stream of atomized coating material on a weight basis. | 01-20-2011 |
20110017056 | ARMOR SYSTEMS INCLUDING COATED CORE MATERIALS - An armor system and method involves providing a core material and a stream of atomized coating material that comprises a liquid fraction and a solid fraction. An initial layer is deposited on the core material by positioning the core material in the stream of atomized coating material wherein the solid fraction of the stream of atomized coating material is less than the liquid fraction of the stream of atomized coating material on a weight basis. An outer layer is then deposited on the initial layer by positioning the core material in the stream of atomized coating material wherein the solid fraction of the stream of atomized coating material is greater than the liquid fraction of the stream of atomized coating material on a weight basis. | 01-27-2011 |
20110020538 | METHODS OF COATING CORE MATERIALS FOR PRODUCTION OF ARMOR SYSTEMS - An armor system and method involves providing a core material and a stream of atomized coating material that comprises a liquid fraction and a solid fraction. An initial layer is deposited on the core material by positioning the core material in the stream of atomized coating material wherein the solid fraction of the stream of atomized coating material is less than the liquid fraction of the stream of atomized coating material on a weight basis. An outer layer is then deposited on the initial layer by positioning the core material in the stream of atomized coating material wherein the solid fraction of the stream of atomized coating material is greater than the liquid fraction of the stream of atomized coating material on a weight basis. | 01-27-2011 |
20110290101 | SEQUENTIAL INJECTION GAS GUNS FOR ACCELERATING PROJECTILES - Gas guns and methods for accelerating projectiles through such gas guns are described. More particularly, gas guns having a first injection port located proximate a breech end of a barrel and a second injection port located longitudinally between the first injection port and a muzzle end of the barrel are described. Additionally, modular gas guns that include a plurality of modules are described, wherein each module may include a barrel segment having one or more longitudinally spaced injection ports. Also, methods of accelerating a projectile through a gas gun, such as injecting a first pressurized gas into a barrel through a first injection port to accelerate the projectile and propel the projectile down the barrel past a second injection port and injecting a second pressurized gas into the barrel through the second injection port after passage of the projectile and to further accelerate the projectile are described. | 12-01-2011 |
20120125726 | DISSIPATIVE STRUCTURES AND RELATED METHODS - Dissipative structures include at least one panel and a cell structure disposed adjacent to the at least one panel having interconnected cells. A deformable material, which may comprise at least one hydrogel, is disposed within at least one interconnected cell proximate to the at least one panel. Dissipative structures may also include a cell structure having interconnected cells formed by wall elements. The wall elements may include a mesh formed by overlapping fibers having apertures formed therebetween. The apertures may form passageways between the interconnected cells. Methods of dissipating a force include disposing at least one hydrogel in a cell structure proximate to at least one panel, applying a force to the at least one panel, and forcing at least a portion of the at least one hydrogel through apertures formed in the cell structure. | 05-24-2012 |
20120174758 | COMPOSITE ARMOR, ARMOR SYSTEM AND VEHICLE INCLUDING ARMOR SYSTEM - Composite armor panels are disclosed. Each panel comprises a plurality of functional layers comprising at least an outermost layer, an intermediate layer and a base layer. An armor system incorporating armor panels is also disclosed. Armor panels are mounted on carriages movably secured to adjacent rails of a rail system. Each panel may be moved on its associated rail and into partially overlapping relationship with another panel on an adjacent rail for protection against incoming ordnance from various directions. The rail system may be configured as at least a part of a ring, and be disposed about a hatch on a vehicle. Vehicles including an armor system are also disclosed. | 07-12-2012 |
20120180630 | LAMINATE ARMOR AND RELATED METHODS - Laminate armor and methods of manufacturing laminate armor are disclosed. Specifically, laminate armor plates comprising a commercially pure titanium layer and a titanium alloy layer bonded to the commercially pure titanium outer layer are disclosed, wherein an average thickness of the titanium alloy inner layer is about four times an average thickness of the commercially pure titanium outer layer. In use, the titanium alloy layer is positioned facing an area to be protected. Additionally, roll-bonding methods for manufacturing laminate armor plates are disclosed. | 07-19-2012 |
Patent application number | Description | Published |
20100078899 | ADJUSTABLE THERMAL CONTACT BETWEEN AN ELECTROSTATIC CHUCK AND A HOT EDGE RING BY CLOCKING A COUPLING RING - A clockable device for use with an electrostatic chuck configured to hold a substrate in a plasma environment is disclosed. The clockable device comprises a first portion of the electrostatic chuck having at least one face with variable thermal contact areas located thereon. A second portion of the electrostatic chuck has at least one face with variable thermal contact areas located thereon. The at least one face of the second portion is configured to be placed in thermal contact with the at least one face of the first portion to control a thermal gradient across a face of the substrate. | 04-01-2010 |
20110137446 | PLASMA PROCESSING SYSTEM CONTROL BASED ON RF VOLTAGE - A method for controlling a plasma processing system using wafer bias information derived from RF voltage information is proposed. The RF voltage is processed via an analog or digital methodology to obtain peak voltage information at least for each of the fundamental frequencies and the broadband frequency. The peak voltage information is then employed to derive the wafer bias information to serve as a feedback or control signal to hardware/software of the plasma processing system. | 06-09-2011 |
20130014371 | METHODS OF DECHUCKING AND SYSTEM THEREOFAANM Povolny; Henry S.AACI NewarkAAST CAAACO USAAGP Povolny; Henry S. Newark CA US - A method for dechucking a substrate from an electrostatic chuck (ESC) in a plasma processing system is provided. The method includes flowing a first gas into a plasma chamber. The method also includes flowing a second gas to a backside of the substrate to create a high pressure buildup of the second gas under the backside. The method further includes reducing a flow of the second gas such that at least a portion is trapped under the substrate backside. The method yet also includes pumping out the plasma chamber to increase a pressure differential between a first pressure that exists under the backside of the substrate and a second pressure that exists in a region above the substrate, wherein the pressure differential enables the substrate to be lifted from the ESC. The method yet also includes removing the substrate from the ESC. | 01-17-2013 |
20130345847 | ARRANGEMENT FOR PLASMA PROCESSING SYSTEM CONTROL BASED ON RF VOLTAGE - An arrangement for controlling a plasma processing system is provided. The arrangement includes an RF sensing mechanism for obtaining an RF voltage signal. The arrangement also includes a high impedance arrangement coupled to the RF sensing mechanism to facilitate acquisition of the signal while reducing perturbation of RF power driving a plasma in the plasma processing system. The arrangement further includes a signal processing arrangement configured for receiving the signal, processing the signal in a digital domain to obtain peak voltage information for a fundamental frequency and a broadband frequency of the signal, deriving wafer bias information from the peak voltage information, and applying signal to a transfer function to obtain a transfer function output. The arrangement moreover includes an ESC power supply subsystem configured to receive the transfer function output as a feedback signal to control the plasma processing system. | 12-26-2013 |
20150187614 | EDGE SEAL FOR LOWER ELECTRODE ASSEMBLY - A lower electrode assembly useful for supporting a semiconductor substrate in a plasma processing chamber includes a temperature controlled lower base plate, an upper plate, a mounting groove surrounding a bond layer and an edge seal comprising a ring compressed in the groove. A gas source supplies inert gas to the groove and maintains the inert gas at a pressure of 100 mTorr to 100 Torr in the groove. | 07-02-2015 |
20150332894 | Arrangement For Plasma Processing System Control Based On RF Voltage - An arrangement for controlling a plasma processing system is provided. The arrangement includes an RF sensing mechanism for obtaining an RF voltage signal. The arrangement also includes a voltage probe coupled to the RF sensing mechanism to facilitate acquisition of the signal while reducing perturbation of RF power driving a plasma in the plasma processing system. The arrangement further includes a signal processing arrangement configured for receiving the signal, split the voltage signals into a plurality of channels, convert the signals into a plurality of direct current (DC) signals, convert the DC signals into digital signals and process the digital signal in a digital domain to generate a transfer function output. The arrangement moreover includes an ESC power supply subsystem configured to receive the transfer function output as a feedback signal to control the plasma processing system. | 11-19-2015 |