Patent application number | Description | Published |
20110049695 | Semiconductor Device and Method of Forming Pre-Molded Semiconductor Die Having Bumps Embedded in Encapsulant - A semiconductor wafer contains a plurality of semiconductor die. A plurality of bumps is formed on the semiconductor wafer. The bumps are electrically connected to contact pads on an active surface of the die. The bumps can also be pillars or stud bumps. A first encapsulant is deposited over the bumps. The semiconductor wafer is singulated to separate the die by cutting channels partially through the wafer and back grinding the wafer down to the channels. A second encapsulant is deposited over the die. A first interconnect structure is formed over a first surface of the second encapsulant. The first interconnect structure is electrically connected to the bumps. A second interconnect structure is formed over a second surface of the second encapsulant. Secondary semiconductor components can be stacked over the second interconnect structure. A third encapsulant is deposited over the stacked secondary components and second interconnect structure. | 03-03-2011 |
20110068444 | Semiconductor Device and Method of Forming Open Cavity in TSV Interposer to Contain Semiconductor Die in WLCSMP - A semiconductor device is made by mounting a semiconductor wafer to a temporary carrier. A plurality of TSV is formed through the wafer. A cavity is formed partially through the wafer. A first semiconductor die is mounted to a second semiconductor die. The first and second die are mounted to the wafer such that the first die is disposed over the wafer and electrically connected to the TSV and the second die is disposed within the cavity. An encapsulant is deposited over the wafer and first and second die. A portion of the encapsulant is removed to expose a first surface of the first die. A portion of the wafer is removed to expose the TSV and a surface of the second die. The remaining portion of the wafer operates as a TSV interposer for the first and second die. An interconnect structure is formed over the TSV interposer. | 03-24-2011 |
20110068459 | Semiconductor Device and Method of Forming Interposer with Opening to Contain Semiconductor Die - A semiconductor device has an interposer mounted over a carrier. The interposer includes TSV formed either prior to or after mounting to the carrier. An opening is formed in the interposer. The interposer can have two-level stepped portions with a first vertical conduction path through a first stepped portion and second vertical conduction path through a second stepped portion. A first and second semiconductor die are mounted over the interposer. The second die is disposed within the opening of the interposer. A discrete semiconductor component can be mounted over the interposer. A conductive via can be formed through the second die or encapsulant. An encapsulant is deposited over the first and second die and interposer. A portion of the interposer can be removed to that the encapsulant forms around a side of the semiconductor device. An interconnect structure is formed over the interposer and second die. | 03-24-2011 |
20110186977 | Semiconductor Device and Method of Forming Thin Profile WLCSP with Vertical Interconnect over Package Footprint - A semiconductor wafer has a plurality of first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. The active surface of the first semiconductor die is oriented toward an active surface of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die. A portion of a back surface of the second semiconductor die opposite the active surface is removed. Conductive pillars are formed around the second semiconductor die. TSVs can be formed through the first semiconductor die. An interconnect structure is formed over the back surface of the second semiconductor die, encapsulant, and conductive pillars. The interconnect structure is electrically connected to the conductive pillars. A portion of a back surface of the first semiconductor die opposite the active surface is removed. A heat sink or shielding layer can be formed over the back surface of the first semiconductor die. | 08-04-2011 |
20110278707 | Semiconductor Device and Method of Forming Prefabricated Multi-Die Leadframe for Electrical Interconnect of Stacked Semiconductor Die - A prefabricated multi-die leadframe having a plurality of contact pads is mounted over a temporary carrier. A first semiconductor die is mounted over the carrier between the contact pads of the leadframe. A second semiconductor die is mounted over the contact pads of the leadframe and over the first die. An encapsulant is deposited over the leadframe and first and second die. The carrier is removed. A first interconnect structure is formed over the leadframe and the first die and a first surface of the encapsulant. A channel is cut through the encapsulant and leadframe to separate the contact pads. A plurality of conductive vias can be formed through the encapsulant. A second interconnect structure is formed over a second surface of the encapsulant opposite the first surface of the encapsulant. The second interconnect structure is electrically connected to the conductive vias. | 11-17-2011 |
20110291249 | Semiconductor Device and Method of Forming Conductive Posts and Heat Sink Over Semiconductor Die Using Leadframe - A semiconductor device has a prefabricated multi-die leadframe with a base and integrated raised die paddle and a plurality of bodies extending from the base. A thermal interface layer is formed over a back surface of a semiconductor die or top surface of the raised die paddle. The semiconductor die is mounted over the raised die paddle between the bodies of the leadframe with the TIM disposed between the die and raised die paddle. An encapsulant is deposited over the leadframe and semiconductor die. Vias can be formed in the encapsulant. An interconnect structure is formed over the leadframe, semiconductor die, and encapsulant, including into the vias. The base is removed to separate the bodies from the raised die paddle. The raised die paddle provides heat dissipation for the semiconductor die. The bodies are electrically connected to the interconnect structure. The bodies operate as conductive posts for electrical interconnect. | 12-01-2011 |
20120119388 | Semiconductor Device and Method of Forming Interposer Frame Electrically Connected to Embedded Semiconductor Die - A semiconductor device has an interposer frame mounted over a carrier. A semiconductor die has an active surface and bumps formed over the active surface. The semiconductor die can be mounted within a die opening of the interposer frame or over the interposer frame. Stacked semiconductor die can also be mounted within the die opening of the interposer frame or over the interposer frame. Bond wires or bumps are formed between the semiconductor die and interposer frame. An encapsulant is deposited over the interposer frame and semiconductor die. An interconnect structure is formed over the encapsulant and bumps of the first semiconductor die. An electronic component, such as a discrete passive device, semiconductor die, or stacked semiconductor die, is mounted over the semiconductor die and interposer frame. The electronic component has an I/O count less than an I/O count of the semiconductor die. | 05-17-2012 |
20120153467 | Semiconductor Device and Method of Forming Thin Profile WLCSP with Vertical Interconnect over Package Footprint - A semiconductor wafer has a plurality of first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. The active surface of the first semiconductor die is oriented toward an active surface of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die. A portion of a back surface of the second semiconductor die opposite the active surface is removed. Conductive pillars are formed around the second semiconductor die. TSVs can be formed through the first semiconductor die. An interconnect structure is formed over the back surface of the second semiconductor die, encapsulant, and conductive pillars. The interconnect structure is electrically connected to the conductive pillars. A portion of a back surface of the first semiconductor die opposite the active surface is removed. A heat sink or shielding layer can be formed over the back surface of the first semiconductor die. | 06-21-2012 |
20120153505 | Semiconductor Device and Method of Forming Thin Profile WLCSP with Vertical Interconnect over Package Footprint - A semiconductor wafer has a plurality of first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. The active surface of the first semiconductor die is oriented toward an active surface of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die. A portion of a back surface of the second semiconductor die opposite the active surface is removed. Conductive pillars are formed around the second semiconductor die. TSVs can be formed through the first semiconductor die. An interconnect structure is formed over the back surface of the second semiconductor die, encapsulant, and conductive pillars. The interconnect structure is electrically connected to the conductive pillars. A portion of a back surface of the first semiconductor die opposite the active surface is removed. A heat sink or shielding layer can be formed over the back surface of the first semiconductor die. | 06-21-2012 |
20120168916 | Semiconductor Device and Method of Forming Open Cavity in TSV Interposer to Contain Semiconductor Die in WLCSMP - A semiconductor device is made by mounting a semiconductor wafer to a temporary carrier. A plurality of TSV is formed through the wafer. A cavity is formed partially through the wafer. A first semiconductor die is mounted to a second semiconductor die. The first and second die are mounted to the wafer such that the first die is disposed over the wafer and electrically connected to the TSV and the second die is disposed within the cavity. An encapsulant is deposited over the wafer and first and second die. A portion of the encapsulant is removed to expose a first surface of the first die. A portion of the wafer is removed to expose the TSV and a surface of the second die. The remaining portion of the wafer operates as a TSV interposer for the first and second die. An interconnect structure is formed over the TSV interposer. | 07-05-2012 |
20120292745 | Semiconductor Device and Method of Forming 3D Semiconductor Package with Semiconductor Die Stacked Over Semiconductor Wafer - A semiconductor device has a substrate and plurality of first semiconductor die having conductive vias formed through the first semiconductor die mounted with an active surface oriented toward the substrate. An interconnect structure, such as bumps or conductive pillars, is formed over the substrate between the first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. The second semiconductor die is electrically connected through the interconnect structure to the substrate and through the conductive vias to the first semiconductor die. An underfill material is deposited between the first semiconductor die and substrate. Discrete electronic components can be mounted to the substrate. A heat spreader or shielding layer is mounted over the first and second semiconductor die and substrate. Alternatively, an encapsulant is formed over the die and substrate and conductive vias or bumps are formed in the encapsulant electrically connected to the first die. | 11-22-2012 |
20130001762 | Semiconductor Device and Method of Using Leadframe Bodies to Form Openings Through Encapsulant for Vertical Interconnect of Semiconductor Die - A semiconductor device has a leadframe with a plurality of bodies extending from the base plate. A first semiconductor die is mounted to the base plate of the leadframe between the bodies. An encapsulant is deposited over the first semiconductor die and base plate and around the bodies of the leadframe. A portion of the encapsulant over the bodies of the leadframe is removed to form first openings in the encapsulant that expose the bodies. An interconnect structure is formed over the encapsulant and extending into the first openings to the bodies of the leadframe. The leadframe and bodies are removed to form second openings in the encapsulant corresponding to space previously occupied by the bodies to expose the interconnect structure. A second semiconductor die is mounted over the first semiconductor die with bumps extending into the second openings of the encapsulant to electrically connect to the interconnect structure. | 01-03-2013 |
20130087898 | Semiconductor Device and Method of Forming Prefabricated Multi-Die Leadframe for Electrical Interconnect of Stacked Semiconductor Die - A prefabricated multi-die leadframe having a plurality of contact pads is mounted over a temporary carrier. A first semiconductor die is mounted over the carrier between the contact pads of the leadframe. A second semiconductor die is mounted over the contact pads of the leadframe and over the first die. An encapsulant is deposited over the leadframe and first and second die. The carrier is removed. A first interconnect structure is formed over the leadframe and the first die and a first surface of the encapsulant. A channel is cut through the encapsulant and leadframe to separate the contact pads. A plurality of conductive vias can be formed through the encapsulant. A second interconnect structure is formed over a second surface of the encapsulant opposite the first surface of the encapsulant. The second interconnect structure is electrically connected to the conductive vias. | 04-11-2013 |
20130099378 | Semiconductor Device and Method of Forming Interposer Frame Electrically Connected to Embedded Semiconductor Die - A semiconductor device has an interposer frame mounted over a carrier. A semiconductor die has an active surface and bumps formed over the active surface. The semiconductor die can be mounted within a die opening of the interposer frame or over the interposer frame. Stacked semiconductor die can also be mounted within the die opening of the interposer frame or over the interposer frame. Bond wires or bumps are formed between the semiconductor die and interposer frame. An encapsulant is deposited over the interposer frame and semiconductor die. An interconnect structure is formed over the encapsulant and bumps of the first semiconductor die. An electronic component, such as a discrete passive device, semiconductor die, or stacked semiconductor die, is mounted over the semiconductor die and interposer frame. The electronic component has an I/O count less than an I/O count of the semiconductor die. | 04-25-2013 |
20130105970 | Semiconductor Device and Method of Forming Conductive Posts and Heat Sink Over Semiconductor Die Using Leadframe | 05-02-2013 |
20130249104 | Semiconductor Device and Method of Forming Conductive Layer Over Metal Substrate for Electrical Interconnect of Semiconductor Die - A semiconductor device has a substrate with a cavity. A conductive layer is formed within the cavity and over the substrate outside the cavity. A plurality of indentations can be formed in a surface of the substrate opposite the cavity for stress relief. A first semiconductor die is mounted within the cavity. A plurality of conductive vias can be formed through the first semiconductor die. An insulating layer is disposed between the first semiconductor die and substrate with the first conductive layer embedded within the first insulating layer. An encapsulant is deposited over the first semiconductor die and substrate. An interconnect structure is formed over the encapsulant. The interconnect structure is electrically connected to the first semiconductor die and first conductive layer. The substrate is removed to expose the first conductive layer. A second semiconductor die is mounted to the conductive layer over the first semiconductor die. | 09-26-2013 |
20130299974 | Semiconductor Device and Method of Forming Open Cavity in TSV Interposer to Contain Semiconductor Die in WLCSMP - A semiconductor device is made by mounting a semiconductor wafer to a temporary carrier. A plurality of TSV is formed through the wafer. A cavity is formed partially through the wafer. A first semiconductor die is mounted to a second semiconductor die. The first and second die are mounted to the wafer such that the first die is disposed over the wafer and electrically connected to the TSV and the second die is disposed within the cavity. An encapsulant is deposited over the wafer and first and second die. A portion of the encapsulant is removed to expose a first surface of the first die. A portion of the wafer is removed to expose the TSV and a surface of the second die. The remaining portion of the wafer operates as a TSV interposer for the first and second die. An interconnect structure is formed over the TSV interposer. | 11-14-2013 |
20130299982 | Semiconductor Device and Method of Forming Interposer with Opening to Contain Semiconductor Die - A semiconductor device has an interposer mounted over a carrier. The interposer includes TSV formed either prior to or after mounting to the carrier. An opening is formed in the interposer. The interposer can have two-level stepped portions with a first vertical conduction path through a first stepped portion and second vertical conduction path through a second stepped portion. A first and second semiconductor die are mounted over the interposer. The second die is disposed within the opening of the interposer. A discrete semiconductor component can be mounted over the interposer. A conductive via can be formed through the second die or encapsulant. An encapsulant is deposited over the first and second die and interposer. A portion of the interposer can be removed to that the encapsulant forms around a side of the semiconductor device. An interconnect structure is formed over the interposer and second die. | 11-14-2013 |
20140175639 | Semiconductor Device and Method of Simultaneous Molding and Thermalcompression Bonding - A semiconductor device has a semiconductor die disposed over a substrate. The semiconductor die and substrate are placed in a chase mold. An encapsulant is deposited over and between the semiconductor die and substrate simultaneous with bonding the semiconductor die to the substrate in the chase mold. The semiconductor die is bonded to the substrate using thermocompression by application of force and elevated temperature. An electrical interconnect structure, such as a bump, pillar bump, or stud bump, is formed over the semiconductor die. A flux material is deposited over the interconnect structure. A solder paste or SOP is deposited over a conductive layer of the substrate. The flux material and SOP provide temporary bond between the semiconductor die and substrate. The interconnect structure is bonded to the SOP. Alternatively, the interconnect structure can be bonded directly to the conductive layer of the substrate, with or without the flux material. | 06-26-2014 |
20140175640 | Semiconductor Device and Method of Bonding Semiconductor Die to Substrate in Reconstituted Wafer Form - A semiconductor device has a plurality of semiconductor die disposed over a carrier. An electrical interconnect, such as a stud bump, is formed over the semiconductor die. The stud bumps are trimmed to a uniform height. A substrate includes a bump over the substrate. The electrical interconnect of the semiconductor die is bonded to the bumps of the substrate while the semiconductor die is disposed over the carrier. An underfill material is deposited between the semiconductor die and substrate. Alternatively, an encapsulant is deposited over the semiconductor die and substrate using a chase mold. The bonding of stud bumps of the semiconductor die to bumps of the substrate is performed using gang reflow or thermocompression while the semiconductor die are in reconstituted wafer form and attached to the carrier to provide a high throughput of the flipchip type interconnect to the substrate. | 06-26-2014 |
20140175661 | Semiconductor Device and Method of Making Bumpless Flipchip Interconnect Structures - A semiconductor device includes a substrate with contact pads. A mask is disposed over the substrate. Aluminum-wettable conductive paste is printed over the contact pads of the substrate. A semiconductor die is disposed over the aluminum-wettable conductive paste. The aluminum-wettable conductive paste is reflowed to form an interconnect structure over the contact pads of the substrate. The contact pads include aluminum. Contact pads of the semiconductor die are disposed over the aluminum-wettable conductive paste. The aluminum-wettable conductive paste is reflowed to form an interconnect structure between the contact pads of the semiconductor die and the contact pads of the substrate. The interconnect structure is formed directly on the contact pads of the substrate and semiconductor die. The contact pads of the semiconductor die are etched prior to reflowing the aluminum-wettable conductive paste. An epoxy pre-dot to maintain a separation between the semiconductor die and substrate. | 06-26-2014 |
20140295618 | Methods of Manufacturing Flip Chip Semiconductor Packages Using Double-Sided Thermal Compression Bonding - Methods of producing a semiconductor package using dual-sided thermal compression bonding includes providing a substrate having an upper surface and a lower surface. A first device having a first surface and a second surface can be provided along with a second device having a third surface and a fourth surface. The first surface of the first device can be coupled to the upper surface of the substrate while the third surface of the second device can be coupled to the lower surface of the substrate, the coupling occurring simultaneously to produce the semiconductor package. | 10-02-2014 |
20140361423 | Semiconductor Device and Method of Using Leadframe Bodies to Form Openings Through Encapsulant for Vertical Interconnect of Semiconductor Die - A semiconductor device has a leadframe with a plurality of bodies extending from the base plate. A first semiconductor die is mounted to the base plate of the leadframe between the bodies. An encapsulant is deposited over the first semiconductor die and base plate and around the bodies of the leadframe. A portion of the encapsulant over the bodies of the leadframe is removed to form first openings in the encapsulant that expose the bodies. An interconnect structure is formed over the encapsulant and extending into the first openings to the bodies of the leadframe. The leadframe and bodies are removed to form second openings in the encapsulant corresponding to space previously occupied by the bodies to expose the interconnect structure. A second semiconductor die is mounted over the first semiconductor die with bumps extending into the second openings of the encapsulant to electrically connect to the interconnect structure. | 12-11-2014 |
20140367848 | Semiconductor Device and Method of Making an Embedded Wafer Level Ball Grid Array (EWLB) Package on Package (POP) Device With a Slotted Metal Carrier Interposer - A semiconductor device has a semiconductor die. The semiconductor die is disposed over a conductive substrate. An encapsulant is deposited over the semiconductor die. A first interconnect structure is formed over the encapsulant. An opening is formed through the substrate to isolate a portion of the substrate electrically connected to the first interconnect structure. A bump is formed over the first interconnect structure. Conductive vias are formed through the encapsulant and electrically connected to the portion of the substrate. A plurality of bumps is formed over the semiconductor die. A first conductive layer is formed over the encapsulant. A first insulating layer is formed over the first conductive layer. A second conductive layer is formed over the first insulating layer and first conductive layer. A second insulating layer is formed over the first insulating layer and second conductive layer. Protrusions extend above the substrate. | 12-18-2014 |