Patent application number | Description | Published |
20100018849 | Removal of Trace Arsenic Impurities from Triethylphosphate (TEPO) - A method of removing trace levels of arsenic-containing impurities from raw triethylphosphate (TEPO) is disclosed. The method uses adsorption, or adsorption followed by a flash distillation. The method comprises contacting raw triethylphosphate (TEPO) with an adsorbent which selectively adsorbs the arsenic-containing impurities in the raw triethylphosphate (TEPO). The adsorbent is a base promoted alumina containing adsorbent represented by a formula: Z | 01-28-2010 |
20110262642 | Process for Producing Silicon and Oxide Films from Organoaminosilane Precursors - A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas: | 10-27-2011 |
20120128897 | Organoaminosilane Precursors and Methods for Depositing Films Comprising Same - Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I: | 05-24-2012 |
20120148745 | Aminovinylsilane for CVD and ALD SiO2 Films - This invention related to method to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of:
| 06-14-2012 |
20130078392 | HALOGENATED ORGANOAMINOSILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME - Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I: | 03-28-2013 |
20130330937 | Process for Producing Silicon and Oxide Films from Organoaminosilane Precursors - A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas: | 12-12-2013 |
20140030448 | NON-OXYGEN CONTAINING SILICON-BASED FILMS AND METHODS OF FORMING THE SAME - Disclosed herein are non-oxygen containing silicon-based films, and methods for forming the same. The non-oxygen silicon-based films contain >50 atomic % of silicon. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 51 to 100, y is 0 to 49, and z is 0 to 50 atomic weight (wt.) percent (%) as measured by XPS. In one embodiment, the non-oxygen silicon-based films were deposited using at least one organosilicon precursor having at least two SiH | 01-30-2014 |
20150024608 | Organoaminodisilane Precursors and Methods for Depositing Films Comprising Same - Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: | 01-22-2015 |