Patent application number | Description | Published |
20090184760 | Driver IC with HV-isolation, especially hybrid electric vehicle motor drive concept - An automotive drive system for a high voltage electric motor comprises a microcontroller and ECU powered by a low voltage (12 volt) bus net which controls the drives of a high voltage inverter powered by a 100 volt or higher source, which, in turn, drives the motor. To provide good electrical insulation between the low voltage and high voltage systems, the low voltage control signals are produced by a low voltage signal transmitter chip which has a small integral antenna which wirelessly communicates with the antenna of a high voltage driver IC which drives the power devices of the high voltage inverter. The two IC chips are separated by a suitable isolation distance and may be bare chips, individually packaged chips or co-packed chips. Plural control IC chips and driver IC chips can communicate with one another for adverse control functions, including “smart” functions. | 07-23-2009 |
20090243764 | Gate-driver IC with HV-isolation, especially hybrid electric vehicle motor drive concept - An automotive drive system for a high voltage electric motor comprises a microcontroller and ECU powered by a low voltage (12 volt) bus net which controls the drives of a high voltage inverter powered by a 100 volt or higher source, which, in turn, drives the motor. To provide good electrical insulation between the low voltage and high voltage systems, the low voltage control signals are produced by a low voltage signal input chip which has a bottom electrode which produces a control potential responsive to the ECU output and a high voltage driver IC which drives the power devices of the high voltage inverter. The high voltage driver IC has a top electrode which drives the high voltage IC function. The bottom electrode of the LV input chip is coupled to the top electrode of the high voltage driver IC through an insulation layer, defining a capacitive coupler which defines an isolation barrier between the low voltage net and the high voltage system insulation. The two ICs may be bare chips, individually packaged chips or co-packed chips. Plural control IC chips and driver IC chips can communicate with one another for diverse control functions, including “smart” functions. | 10-01-2009 |
20090279220 | SEMICONDUCTOR DEVICE PACKAGE WITH INTERNAL DEVICE PROTECTION - An integral impedence is formed on or within a lead frame pin of a semiconductor package and receives a connection from an electrode of a semiconductor die within the package to eliminate the need for adjustment and protective impedences external of the package. The impedence comprises passives such as resistors, capacitors, diodes or inductors which modify the performance of the package for new semiconductor device characteristics. The impedences may have positive or negative temperature coefficients and are in close thermal communication with the semiconductor die. | 11-12-2009 |
20110316086 | Wafer Scale Package for High Power Devices - A semiconductor device package is formed of DBC in which thinned MOSgated and/or diode die are soldered to the bottom of an etched depression in the upper conductive layer. A via in the insulation layer of the DBC is filled with a conductive material to form a resistive shunt. Plural packages may be formed in a DBC card and may be separated individually or in clusters. The individual packages arc mounted in various arrays on a support DBC board and heat sink. Integrated circuits may be mounted on the assembly and connected to the die for control of the die conduction. | 12-29-2011 |
20120001316 | Package for High Power Devices - A semiconductor device package is formed of DBC in which thinned MOSgated and/or diode die are soldered to the bottom of an etched depression in the upper conductive layer. A via in the insulation layer of the DBC is filled with a conductive material to form a resistive shunt. Plural packages may be formed in a DBC card and may be separated individually or in clusters. The individual packages are mounted in various arrays on a support DBC board and heat sink. Integrated circuits may be mounted on the assembly and connected to the die for control of the die conduction. | 01-05-2012 |
20120248564 | Dual Compartment Semiconductor Package with Temperature Sensor - According to an exemplary embodiment, a dual compartment semiconductor package includes a conductive clip having first and second compartments. The first compartment is electrically and mechanically connected to a top surface of the first die. The second compartment electrically and mechanically connected to a top surface of a second die. The dual compartment semiconductor package also includes a groove formed between the first and second compartments, the groove preventing contact between the first and second dies. The dual compartment package electrically connects the top surface of the first die to the top surface of the second die. The first die can include an insulated-gate bipolar transistor (IGBT) and the second die can include a diode. A temperature sensor can be situated adjacent to, over, or within the groove for measuring a temperature of the dual compartment semiconductor package. | 10-04-2012 |
20120262100 | Bondwireless Power Module with Three-Dimensional Current Routing - According to an exemplary embodiment, a bondwireless power module includes a common output pad coupling an emitter/anode node of a high side device to a collector/cathode node of a low side device. The bondwireless power module also includes a high side conductive clip connecting a collector of the high side device to a cathode of the high side device, and causing current to traverse through the high side conductive clip to another high side conductive clip in another power module. The bondwireless power module further includes a low side conductive clip connecting an emitter of the low side device to an anode of the low side device, and causing current to traverse through the low side conductive clip to another low side conductive clip in the another power module. The bondwireless power module can be a motor drive inverter module. | 10-18-2012 |
20120275121 | Power Module with Press-Fit Clamps - According to an exemplary embodiment, a bondwireless power module residing on a top surface of a substrate includes at least one input power pad providing power to the module and at least one output current pad providing output current from the module. At least one press-fit input power clamp engages a top side of the at least one input power pad, and engages a bottom surface of the substrate. Also, at least one press-fit output current clamp engages a top side of the at least one output current pad, and engages the bottom surface of the substrate. The at least one press-fit input power clamp can include at least one top prong and at least one bottom prong. Furthermore, the at least one bottom prong can press the input power pad into the at least one top prong. | 11-01-2012 |
20120314372 | Power Semiconductor Package with Double-Sided Cooling - According to an exemplary embodiment, a power semiconductor package includes a power module having a plurality of power devices. Each of the plurality of power devices can be a power switch. The power semiconductor package also includes a double-sided heat sink with a top side in contact with a plurality of power device top surfaces and a bottom side in contact with a bottom surface of the power module. The power semiconductor package can include at least one fastening clamp pressing the top side and the bottom side of the double-sided heat sink into the power module. The double-sided heat sink can also include a water-cooling element. | 12-13-2012 |
20130015495 | Stacked Half-Bridge Power Module - According to an exemplary embodiment, a stacked half-bridge power module includes a high side device having a high side power terminal coupled to a high side substrate and a low side device having a low side power terminal coupled to a low side substrate. The high side and low side devices are stacked on opposite sides of a common conductive interface. The common conductive interface electrically, mechanically, and thermally couples a high side output terminal of the high side device to a low side output terminal of the low side device. The high side device and the low side device can each include an insulated-gate bipolar transistor (IGBT) in parallel with a diode. | 01-17-2013 |
20130119907 | Power Module with Current Routing - According to an exemplary embodiment, a bondwireless power module includes a common output pad coupling an emitter/anode node of a high side device to a collector/cathode node of a low side device. The bondwireless power module also includes a high side conductive clip connecting a collector of the high side device to a cathode of the high side device, and causing current to traverse through the high side conductive clip to another high side conductive clip in another power module. The bondwireless power module further includes a low side conductive clip connecting an emitter of the low side device to an anode of the low side device, and causing current to traverse through the low side conductive clip to another low side conductive clip in the another power module. The bondwireless power module can be a motor drive inverter module. | 05-16-2013 |
20130140684 | Semiconductor Device Assembly Utilizing a DBC Substrate - A semiconductor device package is formed of DBC in which thinned MOSgated and/or diode die are soldered to the bottom of an etched depression in the upper conductive layer. A via in the insulation layer of the DBC is filled with a conductive material to form a resistive shunt. Plural packages may be formed in a DBC card and may be separated individually or in clusters. The individual packages are mounted in various arrays on a support DBC board and heat sink. Integrated circuits may be mounted on the assembly and connected to the die for control of the die conduction. | 06-06-2013 |
20130147016 | Semiconductor Package Having Internal Shunt and Solder Stop Dimples - A semiconductor device package is formed of DBC in which thinned MOSgated and/or diode die are soldered to the bottom of an etched depression in the upper conductive layer. A via in the insulation layer of the DBC is filled with a conductive material to form a resistive shunt. Plural packages may be formed in a DBC card and may be separated individually or in clusters. The individual packages are mounted in various arrays on a support DBC board and heat sink. Integrated circuits may be mounted on the assembly and connected to the die for control of the die conduction. | 06-13-2013 |
20140048923 | Semiconductor Package for High Power Devices - A semiconductor device package is formed of DBC in which thinned MOSgated and/or diode die are soldered to the bottom of an etched depression in the upper conductive layer. A via in the insulation layer of the DBC is filled with a conductive material to form a resistive shunt. Plural packages may be formed in a DBC card and may be separated individually or in clusters. The individual packages are mounted in various arrays on a support DBC board and heat sink. Integrated circuits may be mounted on the assembly and connected to the die for control of the die conduction. | 02-20-2014 |
20140131709 | Semiconductor Package with Temperature Sensor - According to an exemplary embodiment, a dual compartment semiconductor package includes a conductive clip having first and second compartments. The first compartment is electrically and mechanically connected to a top surface of the first die. The second compartment electrically and mechanically connected to a top surface of a second die. The dual compartment semiconductor package also includes a groove formed between the first and second compartments, the groove preventing contact between the first and second dies. The dual compartment package electrically connects the top surface of the first die to the top surface of the second die. The first die can include an insulated-gate bipolar transistor (IGBT) and the second die can include a diode. A temperature sensor can be situated adjacent to, over, or within the groove for measuring a temperature of the dual compartment semiconductor package. | 05-15-2014 |
20140131767 | Dual Compartment Semiconductor Package - According to an exemplary embodiment, a dual compartment semiconductor package includes a conductive clip having first and second compartments. The first compartment is electrically and mechanically connected to a top surface of the first die. The second compartment electrically and mechanically connected to a top surface of a second die. The dual compartment semiconductor package also includes a groove formed between the first and second compartments, the groove preventing contact between the first and second dies. The dual compartment package electrically connects the top surface of the first die to the top surface of the second die. The first die can include an insulated-gate bipolar transistor (IGBT) and the second die can include a diode. A temperature sensor can be situated adjacent to, over, or within the groove for measuring a temperature of the dual compartment semiconductor package. | 05-15-2014 |
20150035120 | Wafer Scale Package for High Power Devices - A semiconductor device package is formed of DBC in which thinned MOSgated and/or diode die are soldered to the bottom of an etched depression in the upper conductive layer. A via in the insulation layer of the DBC is filled with a conductive material to form a resistive shunt. Plural packages may be formed in a DBC card and may be separated individually or in clusters. The individual packages arc mounted in various arrays on a support DBC board and heat sink. Integrated circuits may be mounted on the assembly and connected to the die for control of the die conduction. | 02-05-2015 |
Patent application number | Description | Published |
20130266963 | ASSAY FOR DETECTING NEUTRALIZING AUTOANTIBODIES TO BIOLOGIC THERAPY - The present invention provides assays for detecting and measuring the presence or level of neutralizing and non-neutralizing autoantibodies to biologics such as anti-TNFα drug therapeutics in a sample. The present invention is useful for monitoring the formation of neutralizing and/or non-neutralizing anti-drug antibodies over time while a subject is on biologic therapy. The present invention is also useful for predicting and/or determining the cross-reactivity of neutralizing anti-drug antibodies in a subject's sample with alternative biologic therapies. As such, the present invention provides information for guiding treatment decisions for those subjects receiving therapy with a biologic agent and improves the accuracy of optimizing therapy, reducing toxicity, and/or monitoring the efficacy of therapeutic treatment to biologic therapy. | 10-10-2013 |
20130295685 | MOBILITY SHIFT ASSAYS FOR DETECTING ANTI-TNF ALPHA DRUGS AND AUTOANTIBODIES - The present invention provides assays for detecting and measuring the presence or level of anti-TNFα drugs and/or the autoantibodies to anti-TNFα drugs in a sample. The present invention is useful for optimizing therapy and monitoring patients receiving anti-TNFα drug therapeutics to detect the presence or level of autoantibodies against the drug. The present invention also provides methods for selecting therapy, optimizing therapy, and/or reducing toxicity in subjects receiving anti-TNFα drugs for the treatment of TNFα-mediated disease or disorders. | 11-07-2013 |
20130344621 | METHODS FOR DETERMINING ANTI-DRUG ANTIBODY ISOTYPES - The present invention provides assay methods for the determination of one or more anti-drug antibody (ADA) isotypes in a sample. As a non-limiting example, the assays of the present invention are particularly useful for determining different ADA isotypes in samples from ADA-positive patients receiving an anti-TNFα drug such as REMICADE™ (infliximab) or HUMIRA™ (adalimumab). The present invention also provides methods for optimizing therapy and/or reducing toxicity in subjects receiving TNFα inhibitors for the treatment of TNFα-mediated disease or disorders. | 12-26-2013 |
20140045276 | ASSAYS FOR DETECTING AUTOANTIBODIES TO ANTI-TNFALPHA DRUGS - The present invention provides assays for detecting and measuring the presence or level of autoantibodies to anti-TNFα drug therapeutics in a sample. The present invention is useful for optimizing therapy and monitoring patients receiving anti-TNFα drug therapeutics to detect the presence or level of autoantibodies against the drug. The present invention also provides methods for selecting therapy, optimizing therapy, and/or reducing toxicity in subjects receiving anti-TNFα drugs for the treatment of TNFα-mediated disease or disorders. | 02-13-2014 |
20140051184 | MOBILITY SHIFT ASSAYS FOR DETECTING ANTI-TNF ALPHA DRUGS AND AUTOANTIBODIES THERETO - The present invention provides assays for detecting and measuring the presence or level anti-TNFα drugs and/or the autoantibodies to anti-TNFα drugs in a sample. The present invention is useful for optimizing therapy and monitoring patients receiving anti-TNFα drug therapeutics to detect the presence or level of autoantibodies against the drug. The present invention also provides methods for selecting therapy, optimizing therapy, and/or reducing toxicity in subjects receiving anti-TNFα drugs for the treatment of TNFα-mediated disease or disorders. | 02-20-2014 |
20140141983 | METHODS OF DISEASE ACTIVITY PROFILING FOR PERSONALIZED THERAPY MANAGEMENT - The present invention provides methods for personalized therapeutic management of a disease in order to optimize therapy and/or monitor therapeutic efficacy. In particular, the present invention comprises measuring an array of one or a plurality of biomarkers at a plurality of time points over the course of therapy with a therapeutic agent to determine a mucosal healing index for selecting therapy, optimizing therapy, reducing toxicity, and/or monitoring the efficacy of therapeutic treatment. In certain instances, the therapeutic agent is a TNFα inhibitor for the treatment of a TNFα-mediated disease or disorder. | 05-22-2014 |
20140186973 | ASSAYS FOR DETECTING NEUTRALIZING AUTOANTIBODIES TO BIOLOGIC THERAPY - The present invention provides assays for detecting and measuring the presence or level of neutralizing and non-neutralizing autoantibodies to biologics such as anti-TNFα drug therapeutics in a sample. The present invention is useful for monitoring the formation of neutralizing and/or non-neutralizing anti-drug antibodies over time while a subject is on biologic therapy. The present invention is also useful for predicting and/or determining the cross-reactivity of neutralizing anti-drug antibodies in a subject's sample with alternative biologic therapies. As such, the present invention provides information for guiding treatment decisions for those subjects receiving therapy with a biologic agent and improves the accuracy of optimizing therapy, reducing toxicity, and/or monitoring the efficacy of therapeutic treatment to biologic therapy. | 07-03-2014 |