Patent application number | Description | Published |
20080265334 | SEMICONDUCTOR DEVICE CAPABLE OF AVOIDING LATCHUP BREAKDOWN RESULTING FROM NEGATIVE VARIATION OF FLOATING OFFSET VOLTAGE - A semiconductor device is provided which is capable of avoiding malfunction and latchup breakdown resulting from negative variation of high-voltage-side floating offset voltage (VS). In the upper surface of an n-type impurity region, a p | 10-30-2008 |
20080272440 | SEMICONDUCTOR DEVICE CAPABLE OF AVOIDING LATCHUP BREAKDOWN RESULTING FROM NEGATIVE VARIATION OF FLOATING OFFSET VOLTAGE - A semiconductor device is provided which is capable of avoiding malfunction and latchup breakdown resulting from negative variation of high-voltage-side floating offset voltage (VS). In the upper surface of an n-type impurity region, a p | 11-06-2008 |
20110018028 | SEMICONDUCTOR DEVICE - A horizontal semiconductor device having multiple unit semiconductor elements, each of said unit semiconductor element formed by an IGBT including: a semiconductor substrate of a first conductivity type; a semiconductor region of a second conductivity type formed on the semiconductor substrate; a collector layer of the first conductivity type formed within the semiconductor region; a ring-shaped base layer of the first conductivity type formed within the semiconductor region such that the base layer is off said collector layer but surrounds said collector layer; and a ring-shaped first emitter layer of the second conductivity type formed in said base layer, wherein movement of carriers between the first emitter layer and the collector layer is controlled in a channel region formed in the base layer, and the unit semiconductor elements are disposed adjacent to each other. | 01-27-2011 |
20120080744 | SEMICONDUCTOR DEVICE - A semiconductor device has a semiconductor substrate having an upper main surface and a lower main surface. The semiconductor substrate includes a drain layer, a main base region, an underpad base region and a source region. The semiconductor device includes a first main electrode connected to the main base regions and the source region and not connected to the underpad base region, a gate electrode opposed to a channel region in the main base region interposed between the drain layer and the source region with a gate insulating film provided therebetween, a conductive gate pad opposed to an exposed surface of the underpad base region in the upper main surface with an insulating layer interposed therebetween and the conductive gate pad is connected to the gate electrode, and a second main electrode connected to the lower main surface. | 04-05-2012 |
20130248926 | SEMICONDUCTOR DEVICE - A horizontal semiconductor device having multiple unit semiconductor elements, each of said unit semiconductor element formed by an IGBT including: a semiconductor substrate of a first conductivity type; a semiconductor region of a second conductivity type formed on the semiconductor substrate; a collector layer of the first conductivity type formed within the semiconductor region; a ring-shaped base layer of the first conductivity type formed within the semiconductor region such that the base layer is off said collector layer but surrounds said collector layer; and a ring-shaped first emitter layer of the second conductivity type formed in said base layer, wherein movement of carriers between the first emitter layer and the collector layer is controlled in a channel region formed in the base layer, and the unit semiconductor elements are disposed adjacent to each other. | 09-26-2013 |