Patent application number | Description | Published |
20080217790 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device having a vertical conductive structure which includes a first inter-layer insulating film; a second inter-layer insulating film formed on the first inter-layer insulating film; a lower-layer contact plug which passes through the first inter-layer insulating film and the second inter-layer insulating film, wherein in the lower-layer contact plug, the outer diameter of the upper surface is smaller than the outer diameter at the boundary position between the first inter-layer insulating film and the second inter-layer insulating film; a third inter-layer insulating film formed on the second inter-layer insulating film; and an upper-layer contact plug which passes through the third inter-layer insulating film on the lower-layer contact plug, and is electrically connected to the lower-layer contact plug. Typically, a wiring line, which is insulated from the lower-layer contact plug and the upper-layer contact plug, is formed between the second inter-layer insulating film and the third inter-layer insulating film. | 09-11-2008 |
20110189828 | Method for forming silicon layer and method for manufacturing semiconductor device - A silicon layer is formed on a silicon substrate by an epitaxial growth, and, then a surface of the silicon layer is oxidized. The surface of the silicon layer is cleaned, to remove foreign material generated on the surface of the silicon layer during the epitaxial growth. | 08-04-2011 |
20120100678 | METHOD FOR FORMING SEMICONDUCTOR DEVICE - A method of forming a semiconductor device includes the following processes. A first interlayer insulating film is formed over a cell transistor and a peripheral transistor. A cell contact hole is formed in the first interlayer insulating film, the cell contact hole reaching the cell transistor. A lower contact plug is formed at a bottom of the cell contact hole. A peripheral contact hole is formed in the first interlayer insulating film, the peripheral contact hole reaching the peripheral transistor. A first peripheral contact plug is simultaneously formed in the peripheral contact hole and an upper contact plug in the cell contact hole, the upper contact plug being disposed on the lower contact plug. | 04-26-2012 |
20120153436 | SEMICONDUCTOR DEVICE AND DATA PROCESSING SYSTEM USING THE SAME - Capacitance blocks (first block and second block) respectively formed on two different adjacent common pad electrodes are electrically connected in series through an upper electrode. A distance between two adjacent capacitance blocks connected in series through an upper electrode film for the upper electrode corresponds to a distance between opposing lower electrodes disposed in an outermost perimeter of each capacitance block, and is two or less times than a total film thickness of the upper electrode film embedded between the two adjacent capacitance blocks. | 06-21-2012 |
20120161281 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE CAPABLE OF SUPPRESSING PEELING OF LOWER ELECTRODE OF CAPACITOR - A method of manufacturing a semiconductor device includes: forming a core insulating film that includes first openings, on a semiconductor substrate; forming cylindrical lower electrodes that cover sides of the first openings with a conductive film; forming a support film that covers at least an upper surface of the core insulating film between the lower electrodes; forming a mask film in which an outside of a region where at least the lower electrodes are formed is removed, by using the support film; and performing isotropic etching on the core insulating film so as to leave the core insulating film at a part of an area between the lower electrodes, after the mask film is formed. | 06-28-2012 |
20150333117 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - One semiconductor device includes lower electrodes arranged in rows along first and second directions parallel to the surface of a semiconductor substrate and extending in a third direction perpendicular to the surface of the substrate, a first support film arranged on the upper end of the lower electrodes and having first openings, a second support film arranged in the middle of the lower electrodes in the third direction, and having second openings aligned in a plane in the same pattern as the first openings, a capacitance insulating film covering the surface of the lower electrodes, and upper electrodes covering the surface of the capacitance insulating film. A portion of each of eight lower electrodes contained in two lower electrode unit groups adjacent in the first direction are collectively positioned inside of the first and second openings. A lower electrode unit group is four lower electrodes adjacent in the second direction. | 11-19-2015 |
Patent application number | Description | Published |
20090130848 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCTION THEREOF - A semiconductor device having a silicon substrate, an element isolating film, an active region, a gate electrode provided via a gate insulating film, a diffusion layer provided on the active region on opposite sides of the gate electrode, an interlayer insulating film, and a plug filled in a hole formed on the interlayer insulating film, wherein the semiconductor device further has a contact forming region surrounded by the element isolating film, and a conductive layer formed on the contact forming region, the gate electrode extends so as to overlap with a portion of the contact forming region and is connected to the conductive layer at the overlapping portion, and the plug contacts the conductive layer at another portion of the contact forming region and is electrically connected to the gate electrode via the conductive layer. | 05-21-2009 |
20100197097 | MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE - To provide a manufacturing method of a semiconductor memory device, the method including forming contact plugs to be connected to a drain region or a source region of each of transistors, by using a SAC line technique of selectively etching an insulation layer that covers each of the transistors by using a mask having a line-shaped opening provided across the contact plugs. Each of the transistors constituting a sense amplifier that amplifies a potential difference between bit lines is a ring-gate transistor. | 08-05-2010 |
20120132972 | SEMICONDUCTOR STORAGE DEVICE - A semiconductor storage device with active regions formed in the shape of a band in a substrate; a plurality of word lines arranged at equal intervals that intersect the active regions; cell contacts that includes first cell contacts in the active regions in the center portions in a longitudinal direction, and second cell contacts at both ends in the longitudinal direction; bit line contacts on the first cell contacts; bit lines that pass over the bit line contacts; storage node contacts on the second cell contacts; storage node contact pads on the storage node contacts; and storage capacitors on the storage node contact pads. The center positions of the storage node contacts are offset from the center positions of the second cell contacts. The center positions of the storage node contact pads are offset from the center positions of the storage node contacts. | 05-31-2012 |
Patent application number | Description | Published |
20080237863 | Semiconductor device and manufacturing method of semiconductor device - A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided. | 10-02-2008 |
20100167529 | Method for Manufacturing Semiconductor Device - An embodiment of the present invention provides a method for manufacturing a semiconductor device. This method comprises: forming a seed film at least on an inner face of a recessed portion of a substrate; forming a protection film on the seed film, the protection film being made of a material that is more easily oxidized than a material forming the seed film; heat-treating the protection film; exposing at least part of the seed film by removing at least part of the heat-treated protection film; forming a plating film on the seed film through electrolytic plating to be buried in the recessed portion, by supplying current to the seed film that is at least partially exposed; and removing the plating film except for a portion buried in the recessed portion. | 07-01-2010 |
20100244256 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes an interlayer insulating film formed above a semiconductor substrate. The interlayer insulating film has a concave portion. A barrier metal layer is formed along a bottom and a sidewall of the concave portion. The barrier metal layer has a first portion provided along the sidewall of the concave portion and a second portion provided along the bottom of the concave portion. A metal wiring layer is formed in the concave portion via the barrier metal layer. The first portion of the barrier metal layer is composed of a titanium nitride layer whose titanium content is more than 50 at %, and the second portion of the barrier metal layer is composed of a titanium nitride layer whose titanium content is relatively larger than the titanium content of the first portion or of a Ti layer. | 09-30-2010 |
20120306081 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - According to one embodiment, a semiconductor device includes an interconnect provided on a first interlayer insulating film covering a semiconductor substrate in which an element is formed, a cap layer provided on the upper surface of the interconnect, and a barrier film provided between the interconnect and a second interlayer insulating film covering the interconnect. The interconnect includes a high-melting-point conductive layer, and the width of the interconnect is smaller than the width of the cap layer. The barrier film includes a compound of a contained element in the high-melting-point conductive layer. | 12-06-2012 |
Patent application number | Description | Published |
20080261398 | Semiconductor device having oxidized metal film and manufacture method of the same - A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film. | 10-23-2008 |
20080299766 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device, includes forming a first dielectric film above a substrate, forming an opening in the first dielectric film, forming a catalytic characteristic film using at least one of a metal having catalytic characteristics and a conductive oxide having catalytic characteristics as its material on sidewalls and at a bottom of the opening, depositing a conductive material film using a conductive material in the opening in which the catalytic characteristic film is formed on the sidewalls and at the bottom, removing the catalytic characteristic film formed on the sidewalls of the opening, and forming a second dielectric film above the first dielectric film and the conductive material film after the removing. | 12-04-2008 |
20090014882 | SEMICONDUCTOR DEVICE - A semiconductor device includes an effective wire formed above a substrate in a multilayer interconnection structure and having a first electrode pad in a top layer; a first reinforcing material formed in the multilayer interconnection structure like surrounding the effective wire; a protective film configured to protect a final surface of the multilayer interconnection structure; and a second reinforcing material formed at a position in contact with the protective film and also between an area in which the effective wire is formed and a chip area end, the second reinforcing material being constituted by a film pattern whose Young's modulus is larger than that of a conductor constituting the first electrode pad and that of a conductor constituting the first reinforcing material. | 01-15-2009 |
20120152168 | SEMICONDUCTOR DEVICE HAVING OXIDIZED METAL FILM AND MANUFACTURE METHOD OF THE SAME - A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film. | 06-21-2012 |
Patent application number | Description | Published |
20090101217 | Flow-Rate Controller, and Regulator Unit and Valve Unit Used for the Same - A highly versatile flow-rate controller that is easy to handle and a regulator unit and a valve unit used for the same are provided. The flow-rate controller includes a regulator unit having a regulator and a first pressure sensor, a valve unit having a second pressure sensor and a flow-rate control valve, and an orifice unit that is connected to the regulator unit and the valve unit in a detachable manner and that has a fluid channel and an orifice that connect to the regulator unit and the valve unit. | 04-23-2009 |
20100001221 | Flow-rate control valve - The present invention provides a flow-rate control valve that allows for manufacturing cost reduction and has a compact size with improved ease of maintenance. The flow-rate control valve includes a lower casing provided with a channel that leads a liquid and a fluid and with a valve seat, a valve body that controls, in conjunction with the valve seat, the flow rate of the liquid and the fluid that pass through the channel, a reciprocating drive part that moves the valve body closer to or away from the valve seat, and an upper casing that houses the reciprocating drive part. | 01-07-2010 |
20120036942 | STRAIGHT TUBE ULTRASONIC FLOW METER - Provided is a straight tube ultrasonic flow meter capable eliminating error causes in the ultrasonic wave measurement, and having further improved measurement accuracy. A straight tube ultrasonic flow meter ( | 02-16-2012 |
20140203545 | FLUID DEVICE UNIT - Either the base part | 07-24-2014 |
20150323081 | SHUT-OFF VALVE - There is provided a shut-off valve including: a valve body part having a valve body surface; a valve seat part provided around an inlet, and having a valve seat surface disposed at a position opposite to the valve body surface; and a moving mechanism that is connected to the valve body part, and moves the valve body part in a direction of an axis to switch to either a shut-off state or a circulation state, wherein the valve seat part has an endless inner peripheral side projection and an endless outer peripheral side projection that project from the valve seat surface toward the valve body surface along the axis, and the valve body part has a diaphragm forming the valve body surface, and an elastic member disposed on a back surface of the diaphragm. | 11-12-2015 |