Patent application number | Description | Published |
20120104350 | VARIABLE RESISTANCE NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A step of forming, on a substrate ( | 05-03-2012 |
20120199805 | NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - Provided are a nonvolatile memory device which can suppress non-uniformity in initial breakdown voltages among nonvolatile memory elements and prevent reduction of yield, and a manufacturing method thereof. The nonvolatile memory device includes a nonvolatile memory element ( | 08-09-2012 |
20120292588 | NONVOLATILE MEMORY DEVICE - A nonvolatile memory device including: a strip-shaped first electrode line ( | 11-22-2012 |
20130037777 | NON-VOLATILE STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME - A variable resistance non-volatile storage device includes: a first line which includes a barrier metal layer and a main layer, and fills an inside of a line trench formed in a first interlayer insulating layer; a first electrode covering a top surface of the first line and comprising a precious metal; memory cell holes formed in a second interlayer insulating layer; a variable resistance layer formed in the memory cell holes and connected to the first electrode; and second lines covering the variable resistance layer and the memory cell holes, wherein in an area near the memory cell holes, the main layer is covered with the barrier metal layer and the first electrode in an arbitrary widthwise cross section of the first line. | 02-14-2013 |
20130043490 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE DEVICE - The semiconductor device | 02-21-2013 |
20130112935 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY DEVICE, AND MANUFACTURING METHOD FOR THE SAME - A nonvolatile memory element according to the present invention includes a first metal line; a plug formed on the first metal line and connected to the first metal line; a stacked structure including a first electrode, a second electrode, and a variable resistance layer, the stacked structure being formed on a plug which is connected to the first electrode; a second metal line formed on the stacked structure and directly connected to the second electrode; and a side wall protective layer which covers the side wall of the stacked structure and has an insulating property and an oxygen barrier property, wherein part of a lower surface of the second metal line is located under an upper surface of the stacked structure. | 05-09-2013 |
20130122651 | MANUFACTURING METHOD OF NON-VOLATILE MEMORY DEVICE - Each of the step of forming a first variable resistance layer ( | 05-16-2013 |
20130224931 | NONVOLATILE MEMORY DEVICE MANUFACTURING METHOD - A method of manufacturing a nonvolatile memory device that is a variable resistance nonvolatile memory device, which has good consistency with a dual damascene process that is suitable for the formation of fine copper lines and which enables large capacity and high integration. This method includes: forming a variable resistance element, a contact hole and a line groove; and forming a current steering layer of a bidirectional diode element above interlayer insulating layers and a variable resistance layer to cover the line groove without covering a bottom surface of the contact hole. | 08-29-2013 |