Patent application number | Description | Published |
20080254606 | Method of Manufacturing Semiconductor Device - Provided is a method of manufacturing a semiconductor device in which properties of photoresist through a lithography process are changed to form a dummy structure, and the structure is applied to a process of forming a gate electrode. The method includes the steps of: forming a buffer layer on the top of a semiconductor substrate; applying an inorganic photoresist on the buffer layer, and forming a photoresist pattern using a lithography process; thermally treating the photoresist pattern using a predetermined gas; uniformly depositing an insulating layer on the thermally treated structure, and etching the deposited layer by the deposited thickness in order to expose the thermally treated photoresist pattern; depositing an insulating layer on the etched structure, and etching the deposited insulating layer to expose the thermally treated photoresist pattern; removing the exposed photoresist pattern using an etching process; forming a gate oxide layer in the portion in which the photoresist pattern is removed; and forming a gate electrode on the gate oxide layer. Accordingly, in forming a structure for manufacturing a nano-sized device, the properties of the layer formed by a lithography process are improved through thermal treatment, and thus the structure used to manufacture various devices can be easily formed. | 10-16-2008 |
20090152596 | SEMICONDUCTOR FET SENSOR AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure. | 06-18-2009 |
20090152597 | BIOSENSOR AND METHOD OF MANUFACTURING THE SAME - Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor. | 06-18-2009 |
20090152598 | BIOSENSOR USING SILICON NANOWIRE AND METHOD OF MANUFACTURING THE SAME - Provided are a biosensor using a silicon nanowire and a method of manufacturing the same. The silicon nanowire can be formed to have a shape, in which identical patterns are continuously repeated, to enlarge an area in which probe molecules are fixed to the silicon nanowire, thereby increasing detection sensitivity. In addition, the detection sensitivity can be easily adjusted by adjusting a gap between the identical patterns of the silicon nanowire depending on characteristics of target molecules, without adjusting a line width of the silicon nanowire in the conventional art. Further, the gap between the identical patterns of the silicon nanowire can be adjusted depending on characteristics of the target molecule to differentiate detection sensitivities, thereby simultaneously detecting various detection sensitivities. | 06-18-2009 |
20100072081 | GAS TREATING APPARATUS AND METHOD - Provided is a gas treating apparatus. The gas treating apparatus includes a storage chamber having a top wall, a bottom wall facing the top wall, and a sidewall connecting the top wall to the bottom wall, a gas collecting unit provided in the storage chamber and storing ionized gas, and an electromagnetic field generator converting a moving direction of the ionized gas. The electromagnetic generator includes at least one of a magnetic field generator generating a magnetic field in the storage chamber and an electric field generator generating an electric field in the storage chamber. | 03-25-2010 |
20100155264 | GAS STORAGE STRUCTURE AND GAS STORAGE APPARATUS INCLUDING THE SAME - Provided are a gas storage structure and a gas storage apparatus including the gas storage structure. The gas storage structure includes a gas storage part including an opening thereon and an entrance control part disposed on the opening and including a gate. | 06-24-2010 |
20100224068 | GAS ADSORPTION MEDIUM AND GAS ADSOPRTION PUMP APPARATUS USING THE SAME - A gas adsorption medium and an adsorption pump apparatus having the same are provided. The gas adsorption medium includes a multi-layered structure of which the layers formed of a material are spaced apart from each other, wherein an ion valence of the material is variable and the material includes extra electrons not participating in a chemical bond, and the adsorption pump apparatus includes the gas adsorption medium as described above. The gas adsorption medium can secure a large surface area by securing a space between the layers so that efficiency of the gas adsorption ability can be enhanced. | 09-09-2010 |
20100270530 | SEMICONDUCTOR NANOWIRE SENSOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a biosensor device is provided. The method involves forming a silicon nanowire channel with a line width of several nanometers to several tens of nanometers using a typical photolithography process, and using the channel to manufacture a semiconductor nanowire sensor device. The method includes etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the second conductivity-type channel on the second conductivity-type pad. | 10-28-2010 |
20100283031 | BIOSENSOR USING NANODOT AND METHOD OF MANUFACTURING THE SAME - A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost. | 11-11-2010 |
20100314609 | NANOWIRE MEMORY - Provided is a nanowire memory including a source and a drain corresponding to the source, and a nano channel formed to connect the source to the drain. Here, the nano channel includes a nanowire electrically connecting the source to the drain according to voltages of the source and drain, and a nanodot formed on the nanowire and having a plurality of potentials capturing charges. Thus, the nanowire memory has a simple structure, thereby simplifying a process. It can generate multi current levels by adjusting several energy states using gates, operate as a volatile or non-volatile memory by adjusting the gates and the energy level, and include another gate configured to adjust the energy level, resulting in formation of a hybrid structure of volatile and non-volatile memories. | 12-16-2010 |
20110008247 | METHOD FOR SELECTIVELY STORING GAS BY CONTROLLING GAS STORAGE SPACE OF GAS STORAGE MEDIUM - Provided is a gas storage method of a gas storage medium having a multilayer structure in which crystalline structures are stacked to be spaced from each other, including selectively storing gas by relatively controlling a space between the crystalline structures or a lattice distance between crystals of each crystalline structure with respect to the van der Waals diameter of gas which is to be stored. According to the gas storage method, it is possible to selectively store gas. | 01-13-2011 |
20110132543 | BRUSH TYPE PLASMA SURFACE TREATMENT APPARATUS - A brush type plasma surface treatment apparatus is provided. The brush type plasma surface treatment apparatus includes a frame for plasma generation units, a plurality of plasma generation units arranged in an array at the lower edge of the frame, a gas supply hole installed on one side of an upper edge of the frame and supplying a gas to the plurality of plasma generation units, and a power supply unit installed on the other side of the upper edge of the frame and supplying power to the plurality of plasma generation units. | 06-09-2011 |
20110139637 | METHOD AND APPARATUS FOR MEASURING ISOELECTRIC POINT USING FIELD EFFECT TRANSISTOR - Provided are a method and apparatus for measuring an isoelectric point using a field effect transistor. The method includes providing a field effect transistor including a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes, providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes, providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes, and determining as the isoelectric point of the field effect transistor or a material disposed on the field effect transistor using a difference between the first and second current values. | 06-16-2011 |
20110165557 | APPARATUS AND METHOD FOR DETECTING BIOMOLECULES - Provided are an apparatus and method for detecting biomolecules. The apparatus includes a FET having a substrate, a source electrode, a drain electrode, a channel region between the source and drain electrodes, and probe molecules fixed to the channel region, wherein the source and drain electrodes are separated on the substrate, a microfluid supplier selectively supplying one of a reference buffer solution of low ionic concentration and a reaction solution of high ionic concentration containing target molecules, to the channel region of the FET to which the probe molecules are fixed, and a biomolecule detector detecting the target molecules by measuring a first current value of the channel region of the FET, and a second current value of the channel region of the FET to which the target molecules and the probe molecules that bind to each other in the reaction solution of high ionic concentration are fixed. | 07-07-2011 |
20110193052 | THREE-DIMENSIONAL NANODEVICES INCLUDING NANOSTRUCTURES - Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused. In particular, since 3D nanostructures have mechanical and electrical characteristics, 3D nanodevices including new 3D nanostructures can be provided using nano-electro-mechanical systems (NEMS). Also, a single electron device, a spin device, or a single electron transistor (SET)-field effect transistor (FET) hybrid device can be formed using a simple process unlike in planar devices. | 08-11-2011 |
20110194976 | DETECTION DEVICE AND SYSTEM - A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET. | 08-11-2011 |
20110212612 | MEMORY DEVICES INCLUDING DIELECTRIC THIN FILM AND METHOD OF MANUFACTURING THE SAME - A memory device including a dielectric thin film having a plurality of dielectric layers and a method of manufacturing the same are provided. The memory device includes: a bottom electrode; at least one dielectric thin film disposed on the bottom electrode and having a plurality of dielectric layers with different charge trap densities from each other; and an top electrode disposed on the dielectric thin film. Therefore, a memory device, which can be readily manufactured by a simple process and can be highly integrated using its simple structure, can be provided. | 09-01-2011 |
20120015467 | BIOSENSOR USING NANODOT AND METHOD OF MANUFACTURING THE SAME - A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost. | 01-19-2012 |
20120125768 | DISSOLVED OXYGEN MEASUREMENT SYSTEM - Provided is a dissolved oxygen measurement system. The dissolved oxygen measurement system includes a hydrogen storage device storing hydrogen, a first hydrogen fuel cell in which the hydrogen stored in the hydrogen storage device and water supplied from the outside in real time react with each other to generate first electricity energy, a water storage tank storing the water supplied from the outside, a second hydrogen fuel cell in which the water supplied from the water storage tank and the hydrogen stored in the hydrogen storage device react with each other to generate second electricity energy, and a control unit analyzing a difference between the first electricity energy and the second electricity energy. | 05-24-2012 |
20120129682 | METHOD OF FABRICATING NANOWIRE POROUS MEDIUM AND NANOWIRE POROUS MEDIUM FABRICATED BY THE SAME - Provided is a method of fabricating of a nanowire porous medium and a medium formed by the method. In this method, water and organic solvent are mixed and stirred to form a large amount of bubbles, and the bubbles are used such that porosity can be formed more easily and in a more amount. Therefore, the nanowire porous medium can be fabricated more easily and simply. Also, in the nanowire porous medium according to the inventive concept, absorption capacity is increased by containing nanowires, and flexibility and durability are increased by containing a polymer. | 05-24-2012 |
20120143121 | CHITOSAN SPREADING SYSTEM USING LOW TEMPERATURE ATMOSPHERIC PRESSURE PLASMA - Provided is a chitosan spreading system using low temperature atmospheric pressure plasma. The system includes a dielectric tube of hollow cylindrical shape including a gas inlet supplied with a carrier gas and a plasma outlet spraying low temperature atmospheric pressure plasma generated therein, a first electrode provided in the dielectric tube, an power supply unit configured to apply an electric power to the first electrode, a carrier gas supply unit configured to supply a carrier gas into the gas inlet of the dielectric tube, and a chitosan supply unit configured to supply chitosan into the low temperature atmospheric pressure plasma generated in the dielectric tube | 06-07-2012 |
20130075326 | FILTER FABRICATION METHOD AND THE FILTER FORMED THEREBY - Provided are a filter fabrication method and the filter formed thereby. In this method, a three-dimensional graphene polymer complex filter can be easily fabricated. By forming various patterns at a surface of a collector, patterns can be simply formed at a surface of a filter. This provides advantages at control of pressure difference which can be one of the very important factors necessary for designing and fabricating a filter. Since the filter includes graphene particles homogeneously combined to the polymer nanofiber, the filter can represent a superior antibiosis. | 03-28-2013 |
20130149532 | FIBER FABRICATION METHOD AND THE FIBER FABRICATED THEREBY - Provided are fiber fabrication method and the fiber fabricated thereby. In this method, different monomer solutions are electrospun through nozzles whose outlets are stuck to each other and simultaneously interfacially polymerized to form a polymer fiber without a complicated process of preparing a polymer solution. Therefore, a polymer fiber can be simply prepared. | 06-13-2013 |
20130153545 | PLASMA JET ASSEMBLY AND PLASMA BRUSH INCLUDING THE SAME - Plasma jet assemblies are provided. A plasma jet assembly may include: a tube through which a gas flows; a power source providing a high frequency power exciting the gas in plasma state; a power electrode applying the high frequency power to the gas; and a plasma control unit removing arc discharge of a plasma gas generated in the tube by the high frequency power applied to the power electrode. | 06-20-2013 |
20130158466 | PLASMA BRUSHES - Plasma brushes are provided. The plasma brush includes a nozzle, a connector connected to a first end of the nozzle, a power electrode disposed at a portion of the nozzle, and a ground electrode disposed at a second end of the nozzle opposite to the connector. | 06-20-2013 |
20130162463 | SPACE PERCEPTION DEVICE - Disclosed is a space perception device which includes a transceiver unit transmitting and receiving a signal; a processing unit analyzing signals transmitted and received through the transceiver unit to search location information of an obstacle at a space; and a vibration unit providing a user with location information of an obstacle at a space in response to a control of the processing unit. The vibration unit includes a plurality of vibrators having different three-dimensional coordinates. | 06-27-2013 |
20130197338 | PAIN SIGNAL MEASUREMENT DEVICE AND PAIN SIGNAL MEASURING AND CONTROLLING METHOD THEREOF - Provided is a pain signal measurement device including a microprobe array inserted into a skin to measure a pain signal. The microprobe array includes a guard electrode disposed on a substrate; a plurality of microprobes penetrating the substrate and the guard electrode, electrically insulated from the guard electrode, and measuring a voltage or current of the skin into which the microprobe array is inserted; and an insulating layer disposed between the guard electrode and a guarded electrode of each of the microprobes to reduce a noise between the microprobes. A surface of the insulating layer of each of the microprobes is grounded to the guard electrode. | 08-01-2013 |
20130197344 | PHOTO-ACOUSTIC TOMOGRAPHY - The present invention relates to a photo-acoustic tomography that can acquire a functional image for an inner part of a living body through generation of a local ultrasonic wave generated by energy that is introduced from a laser light source, and to a photo-acoustic tomography using a semiconductor laser and an optical fiber power amplifying device in order to increase resolution and an image acquisition time of an image, a photo-acoustic tomography that can acquire a high-sensitive image even in a place where a penetration depth is large through energy modulation, and a high-sensitive high-speed photo-acoustic tomography that can acquire a high-speed image by placing an array-type laser light source. | 08-01-2013 |
20140050621 | BIOSENSOR AND BIOMATERIAL DETECTION APPARATUS INCLUDING THE SAME - Provided are a biosensor and a biomaterial detection apparatus including the same. The biomaterial detection apparatus comprises a light source to provide quantized photons; a substrate spaced apart from the light source; a single photonic sensor layer disposed on the substrate to sense the photons; and an adsorption layer disposed to cover the single photonic sensor layer, allow the photons to pass therethrough, and adsorb a biomaterial between the light source and the substrate. | 02-20-2014 |
20140167783 | RESONATOR AND BIOSENSOR SYSTEM INCLUDING THE SAME - Provided are a resonator and a biosensor system including the same. The resonator may have a flat plate shape to increase a filling factor of a sample, thereby improving measurement sensitivity. Also, the resonator may be miniaturized, and thus the biosensor system including the resonator may also be miniaturized. | 06-19-2014 |
20140231951 | SILICON PHOTOMULTIPLIER AND METHOD OF MANUFACTURING SILICON PHOTOMULTIPLIER - Provided is a structure of a silicon photomultiplier including an insulating layer to isolate pixels in the silicon photomultiplier and a quench resistor formed on the insulating layer to maximize the size of a light-receiving area, and a method of manufacturing the silicon photomultiplier. | 08-21-2014 |
20150061455 | VIBRATION DEVICE AND METHOD OF MANUFACTURING VIBRATION DEVICE - A vibration device including a supporting portion formed to cover both ends of a vibration region, and a method of manufacturing the vibration device are provided. The vibration device may include a lower substrate on which an insulating layer is formed, an upper substrate connected onto the insulating layer, and including a vibration region that vibrates and that is separated from the lower substrate by at least a predetermined distance, and a supporting portion formed to cover both ends of the vibration region, to support the vibration region. | 03-05-2015 |