Patent application number | Description | Published |
20100182833 | MEMORY AND BOUNDARY SEARCHING METHOD THEREOF - A memory and a boundary searching method thereof are provided therein. When searching a boundary of a threshold voltage distribution of the memory, data errors resulted from tail bits of the memory would be corrected. Therefore, a sensing window could be broader, and the boundary of the threshold voltage distribution could be determined precisely. | 07-22-2010 |
20100226180 | MEMORY ARRAY AND METHOD OF OPERATING A MEMORY - A memory array is described, including memory cells with source and drain doped regions, and global bit lines coupled to the doped regions via select transistors. The connections of the select transistors are configured such that the respective loading capacitances of two global bit lines respectively coupled to the source and the drain of a memory cell to be read do not vary with the memory cell to be read. | 09-09-2010 |
20110085383 | CURRENT SINK SYSTEM FOR SOURCE SIDE SENSING - Source-side sensing techniques described herein determine the data value stored in a memory cell based on the difference in current between the read current from the source terminal of the memory cell and a sink current drawn from the read current. The sink current is drawn in response to the magnitude of a reference current provided by a reference current source such as a reference cell. | 04-14-2011 |
20110085384 | CURRENT SINK SYSTEM FOR SOURCE-SIDE SENSING - Source-side sensing techniques described herein determine the data value stored in a memory cell based on the difference in current between the read current from the source terminal of the memory cell and a sink current drawn from the read current. The sink current is drawn in response to the magnitude of a reference current provided by a reference current source such as a reference cell. | 04-14-2011 |
20110157986 | MEMORY AND OPERATING METHOD THEREOF - A memory and an operating method thereof are provided therein. When searching a boundary of a threshold voltage distribution of the memory, data errors resulted from tail bits of the memory would be corrected. Therefore, a sensing window could be broader, and the boundary of the threshold voltage distribution could be determined precisely. | 06-30-2011 |
20110216601 | CURRENT SINK SYSTEM BASED ON SAMPLE AND HOLD FOR SOURCE SIDE SENSING - Source-side sensing techniques described herein determine the data value stored in a memory cell based on the difference in current between the read current from the source terminal of the memory cell and a sink current drawn from the read current. The sink current is drawn in response to a magnitude of an operating voltage between first and second nodes. During a first time interval, the operating voltage is set in response to a magnitude of the reference current using a feedback path. During a second time interval following the first time interval, the operating voltage is held independent of the feedback path. The data value stored in the memory cell is determined based on a difference in current between the read current and the sink current during the second time interval. | 09-08-2011 |
20110267881 | MEMORY ARRAY - A memory array is shown, including memory cells with source and drain doped regions, and global bit lines coupled to the doped regions via select transistors. The connections of the select transistors are configured such that the respective loading capacitances of two global bit lines respectively coupled to the source and the drain of a memory cell to be read do not vary with the memory cell to be read. | 11-03-2011 |
20120033518 | CURRENT SINK SYSTEM FOR SOURCE-SIDE SENSING - Source-side sensing techniques described herein determine the data value stored in a memory cell based on the difference in current between the read current from the source terminal of the memory cell and a sink current drawn from the read current. The sink current is drawn in response to the magnitude of a reference current provided by a reference current source such as a reference cell. | 02-09-2012 |
20130058181 | MEMORY WITH TEMPERATURE COMPENSATION - A memory element in which the temperature coefficient of a memory cell substantially matches the temperature coefficient of a reference cell and tuning either the temperature coefficient of a memory cell to substantially match the temperature coefficient of the reference cell provides for improved precision of sensing or reading memory element states, particularly so as to minimize the affect of temperature variations on reading and sensing states. | 03-07-2013 |
20140026011 | Memory with Dynamic Error Detection and Correction - A dynamic error correcting table can be embedded on an integrated circuit memory device. The error correcting table includes entries which are created for data when an error is detected and corrected during a read of the data. During subsequent reads, without intervening write or refresh operations, the entry in the table can be used to correct the error by merging the corrected bit with the data output from the array before it is applied to the ECC logic. | 01-23-2014 |
20140266105 | LOW DROP OUT REGULATOR AND CURRENT TRIMMING DEVICE - A regulator comprises an amplifier, a bias circuit, and a current trimming circuit. The bias circuit is coupled to the amplifier and supplies a first bias current to the amplifier in a first mode of a system including the regulator. The current trimming circuit is coupled to the bias circuit to adjust the first bias current. | 09-18-2014 |