Patent application number | Description | Published |
20120142159 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - Methods for fabricating a semiconductor device are provided wherein, in an embodiment, the method includes the steps of forming a gate electrode on a semiconductor substrate, forming a trench by recessing the semiconductor substrate in the vicinity of the gate electrode, doping an anti-diffusion ion into a portion of the semiconductor substrate in the trench, and growing an impurity-doped epitaxial layer on the semiconductor substrate doped with the anti-diffusion ion. | 06-07-2012 |
20120269498 | UNIT FOR SUPPORTING A SUBSTRATE AND APPARATUS FOR TREATING A SUBSTRATE WITH THE UNIT - A substrate treatment apparatus and a supporting unit are provided. The substrate treatment apparatus includes a chamber in which a substrate is processed; a supporting unit that is disposed in the chamber and is configured to support the substrate; and a heating member that is configured to apply heat to the substrate supported by the supporting unit. The supporting unit includes a plate; a plurality of supporting pins upwardly protruding from the plate; and at least one auxiliary pin upwardly protruding from the plate. A distance between a central point of the plate and the at least one auxiliary pin is different from a distance between the central point of the plate and the supporting pins. | 10-25-2012 |
20120299154 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEBICE - A semiconductor device having an improved negative bias temperature instability lifetime characteristic is manufactured by forming a first insulating layer on a substrate, performing a first nitridation on the first insulating layer to form a second insulating layer, and sequentially performing a first and second anneal on the second insulating layer to form a third insulating layer, wherein the second anneal is performed at a higher temperature and with a different gas than the first anneal. A second nitridation is performed on the third insulating layer to form a fourth insulating layer, and a sequential third and fourth anneal on the fourth insulating layer forms a fifth insulating layer. The third anneal is performed at a higher temperature than the first anneal, and the fourth anneal is performed at a higher temperature than the second anneal and with a different gas than the third anneal. | 11-29-2012 |
20150147861 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING SURFACE TREATMENT AND SEMICONDUCTOR DEVICE MANUFACTURED BY THE METHOD - A method of manufacturing a semiconductor device includes forming a first plurality of recessed regions in a substrate, the substrate having a protruded active region between the first plurality of recessed regions and the protruded active region having an upper surface and a sidewall, forming a device isolation film in the first plurality of recessed regions, the device isolation film exposing the upper surface and an upper portion of the sidewall of the protruded active region, and performing a first plasma treatment on the exposed surface of the protruded active region, wherein the plasma treatment is performed using a plasma gas containing at least one of an inert gas and a hydrogen gas in a temperature of less than or equal to about 700. | 05-28-2015 |
20160049312 | PLASMA TREATING APPARATUS, SUBSTRATE TREATING METHOD, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A substrate treating method may be performed by a plasma treating apparatus. The substrate treating method may include: providing a substrate on a platform in a lower portion of an inner space of a process chamber; directing a first process gas upward from a first nozzle formed at an inner wall of the process chamber into an upper portion of the inner space, the first process gas being an inert gas and wherein the first nozzle is an obliquely upward-oriented nozzle structured to direct the first process gas upward; directing a second process gas downward from a second nozzle formed at a inner wall of the process chamber into a lower portion of the inner space, the second process gas being hydrogen gas and wherein the second nozzle is an obliquely downward-oriented nozzle structured to direct the second process gas downward; and applying a microwave to the upper portion of the inner space to excite the first process gas and the second process gas into plasma, and then processing the substrate. | 02-18-2016 |
20160086943 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate, an isolation layer on the substrate, and at least one active fin on the substrate. The isolation layer includes a first surface opposite a second surface. The first surface is contiguous with the substrate. The at least one active fin protrudes from the substrate and includes a first region having a side wall above the second surface of the isolation layer and a second region on the first region. The second region has an upper surface. The first region has a first width contiguous with the second surface of the isolation layer and a second width contiguous with the second region. The second width is 60% or greater than the first width (e.g., 60% to 100%). | 03-24-2016 |
20160122536 | CHEMICAL RESISTANT POLYMER RESIN COMPOSITION FOR VEHICLE OVERHEAD CONSOLE - A chemical resistant polymer resin composition for an overhead console includes a polyester resin including a residue of a dicarboxylic acid component containing terephthalic acid and a residue of a diol component containing 5 to 60 mol % of isosorbide, 5 to 80 mol % of cyclohexanedimethanol, and a residual amount of other diol compounds; polycarbonate; and an unsaturated nitrile-aromatic vinyl-alkylacrylate graft copolymer based on the total weight of the polyester resin, polycarbonate, and unsaturated nitrile-aromatic vinyl-alkylacrylate graft copolymer. The composition further includes 0.1 to 10 parts by weight of a weather resistant additive, based on 100 parts by weight of the polyester resin, polycarbonate, and unsaturated nitrile-aromatic vinyl-alkylacrylate graft copolymer. | 05-05-2016 |
20160122537 | CHEMICAL RESISTANT POLYMER COMPOSITION FOR A CENTER FASCIA - A chemical resistant polymer composition for a center fascia includes a resin composition consisting of 10 to 20% by weight of a polyester copolymer containing a residue of a dicarboxylic acid component containing terephthalic acid and a residue of a diol component containing dianhydrohexitoll; 15 to 25% by weight of polytrimethyleneterephthalate; 10 to 20% by weight of one or more copolymers selected from the group consisting of an unsaturated nitrile-diene-based rubber-aromatic vinyl graft copolymer, an alkylmethacrylate-diene-based rubber-aromatic vinyl graft copolymer, and an alkylmethacrylate-silicone/alkylacrylate graft copolymer; and 50 to 65% by weight of polycarbonate based on the weight of the resin composition. The polymer composition further comprises 0.1 to 10 parts by weight of a phosphite-based antioxidant, based on 100 parts by weight of the resin composition. | 05-05-2016 |