Patent application number | Description | Published |
20090109469 | OFFICE MACHINE AND FAX RECEIVING MODE SWITCH METHOD THEREOF - A fax receiving mode switch method of an office machine connecting with at least one host device, via a network and communicating with an external fax machine, is provided with: requesting a response to the at least one host device; and switching a mode of the office machine based on whether there is any response from the at least one host device. | 04-30-2009 |
20110096920 | Apparatus and method for data communication - The present invention relates to a data communication method and apparatus comprising a noise information memory for storing noise information to indicate a degree of noise on a current communication line and capable of performing communications in a plurality of communication modes. The method and apparatus further comprising a mode memory for storing the plurality of communication modes in response to the degree of noise, and a mode change control unit for reading current noise information from the noise information memory and selecting the communication mode corresponding to the current degree of noise from the mode memory, and changing the current communication mode into the selected communication mode. The present invention provides an apparatus and a method for highly reliable data communication with simplified construction. | 04-28-2011 |
20120081739 | Method of performing operation in image forming apparatus and image forming apparatus for performing the method - A method of performing an operation in an image forming apparatus by using a workform which defines one or more workflows indicating one or more operations to be performed with respect to input data includes: receiving identification information of a user of the image forming apparatus; with respect to a workform selected by the user from among one or more workforms pre-existing in the image forming apparatus, determining whether there exists a workform which is redefined corresponding to the received identification information; and if it is determined that there exists the redefined workform, performing an operation according to the workform which is redefined corresponding to the identification information. | 04-05-2012 |
20140118794 | FAX MACHINE AND METHOD OF PERFORMING HANDSHAKING PROCESS BASED ON T.30 PROTOCOL - A method of performing handshaking between fax machines on the basis of T.30 protocol includes transmitting information on a first data rate selected to transmit a fax document to a receiving-side fax machine, transmitting a plurality of frames including bit strings predefined to test data transmission/reception at the first data rate prior to transmitting the fax document to the receiving-side fax machine, and receiving a message informing success or failure of the test. The transmitting of the frames includes determining a time duration of the transmitting the frames based on at least one of a TCF flag value and the first data rate. | 05-01-2014 |
Patent application number | Description | Published |
20090242870 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided. | 10-01-2009 |
20090291519 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided. | 11-26-2009 |
20100216272 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided. | 08-26-2010 |
20120037881 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer. | 02-16-2012 |
20120142134 | METHOD OF FABRICATING LIGHT EMITTING DIODE - Exemplary embodiments of the present invention relate to a method of fabricating a light emitting diode (LED). According to an exemplary embodiment of the present invention, the method includes growing a first GaN-based semiconductor layer on a substrate at a first temperature by supplying a chamber with a nitride source gas and a first metal source gas, stopping the supply of the first metal source gas and maintaining the first temperature for a first time period after stopping the supply of the first metal source gas, decreasing the temperature of the substrate to the a second temperature after the first time period elapses, growing an active layer of the first GaN-based semiconductor layer at the second temperature by supplying the chamber with a second metal source gas. | 06-07-2012 |
20130099201 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer. | 04-25-2013 |
20130256630 | NEAR UV LIGHT EMITTING DEVICE - Disclosed herein is an ultraviolet (UV) light emitting device. The light emitting device includes an n-type contact layer including a GaN layer; a p-type contact layer including a GaN layer; and an active layer of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, the active area configured to emit near ultraviolet light at wavelengths of | 10-03-2013 |
20140167086 | EPITAXIAL LAYER WAFER HAVING VOID FOR SEPARATING GROWTH SUBSTRATE THEREFROM AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME - An epitaxial wafer having a void for separation of a substrate and a semiconductor device fabricated using the same. The epitaxial wafer includes a substrate, a mask pattern disposed on the substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern. The epitaxial layer includes a void disposed on the masking region. | 06-19-2014 |
20140197454 | PHOTO DETECTION DEVICE - TA photo detection device, including a substrate, a band-pass filter layer formed over the substrate, a light absorption layer formed over the band-pass filter layer, a Schottky layer formed on a portion of the light absorption layer, a first electrode layer formed on a portion of the Schottky layer, and a second electrode layer formed on the light absorption layer and spaced apart from the Schottky layer. | 07-17-2014 |
20150041760 | NEAR UV LIGHT EMITTING DEVICE - Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, and at least one electron control layer disposed between the n-type contact layer and the active area. Each of the n-type contact layer and the p-type contact layer includes an AlInGaN or AlGaN layer, and the electron control layer is formed of AlInGaN or AlGaN. In addition, the electron control layer contains a larger amount of Al than adjacent layers to obstruct flow of electrons moving into the active area. Accordingly, electron mobility is deteriorated, thereby improving recombination rate of electrons and holes in the active area. | 02-12-2015 |
20150144874 | UV LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - A UV light emitting diode and a method of fabricating the same are provided. The light emitting diode includes an active area between an n-type nitride-based semiconductor layer and a p-type nitride-based semiconductor layer, wherein the active area includes a plurality of barrier layers containing Al, a plurality of well layers containing Al and alternately arranged with the barrier layer, and at least one conditioning layer. Each conditioning layer is placed between the well layer and the barrier layer adjacent to the well layer and is formed of a binary nitride semiconductor. The design of the conditioning layer can reduce stress of the active area while allowing uniform control of the composition of the well layers and/or the barrier layers. | 05-28-2015 |
20150221822 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the super lattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer. | 08-06-2015 |
20150295132 | EPITAXIAL LAYER WAFER HAVING VOID FOR SEPARATING GROWTH SUBSTRATE THEREFROM AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME - An epitaxial wafer includes a growth substrate, a mask pattern disposed on the growth substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern and including a first void disposed on the masking region. The first void includes a lower void disposed between a lower surface of the epitaxial layer and the masking region, and an upper void extending from the lower void into the epitaxial layer, the lower void having a greater width than the upper void. | 10-15-2015 |
20150333218 | UV LIGHT EMITTING DEVICE - A UV light emitting device includes: an n-type contact layer including an AlGaN layer or an AlInGaN layer; a p-type contact layer including a AlGaN layer or an AlInGaN layer; and an active layer of a multi-quantum well structure placed between the n-type contact layer and the p-type contact layer. The active area of the multi-quantum well structure includes barrier layers and well layers. The well layers include electrons and holes present according to probability distributions thereof. The barrier layers are formed of AlInGaN or AlGaN and have an Al content of 10% to 30%. At least one of the barrier layers disposed between the well layers has a smaller thickness than of the well layers and at least one of the barrier layers placed between the well layers has a thickness and a band gap preventing electrons and holes injected into and confined in a well layer adjacent to the barrier layer from spreading into another adjacent well layer. | 11-19-2015 |
20150364319 | METHOD OF FABRICATING A NITRIDE SUBSTRATE - A method of fabricating a nitride substrate including preparing a growth substrate and disposing a sacrificial layer on the growth substrate. The sacrificial layer includes a nitride horizontal etching layer including an indium-based nitride and an upper nitride sacrificial layer formed on the nitride horizontal etching layer. The method of fabricating the nitride substrate also includes horizontally etching the nitride horizontal etching layer, forming at least one etching hole at least partially through the upper nitride sacrificial layer such that the at least one etching hole expands in the nitride horizontal etching layer in a horizontal direction during horizontal etching of the nitride horizontal etching layer, forming a nitride epitaxial layer on the upper nitride sacrificial layer by hydride vapor phase epitaxy (HVPE) and separating the nitride epitaxial layer from the growth substrate at the nitride horizontal etching layer. | 12-17-2015 |
Patent application number | Description | Published |
20140085060 | GATEWAY APPARATUS, WIRELESS COMMUNICATION PROVIDING METHOD THEREOF, AND NETWORK SYSTEM - A gateway apparatus for wireless communication is provided. The gateway apparatus includes an interface to which a plurality of electronic devices within a first range connect wirelessly, and a controller configured to provide a communication connection using a frequency band to each of the plurality of electronic devices so that each of the electronic devices connected to the interface is enabled for wireless communication, to split the frequency band into a plurality of bands respectively corresponding to the plurality of electronic devices connected to the interface when it is determined that communication interference occurs between the electronic devices, and to allocate the split bands to the respective electronic devices to control the electronic devices to perform communications through the split bands. | 03-27-2014 |
20140179276 | SERVICE PROVIDING TERMINAL CONNECTION METHOD AND APPARATUS - A method and apparatuses for device control performed by a first device to control services provided by a service providing device is provided. The method includes connecting, through out-of-band communication, to a second device that includes identification information related to the service providing device, receiving, through the out-of-band communication, the identification information related to the service providing device from the second device, executing at least one application related to the identification information, and connecting, through in-band communication, to the service providing device using the identification information, and controlling, from the first device, services provided by the service providing device. | 06-26-2014 |
20140181335 | METHOD AND SYSTEM FOR COMMUNICATION BETWEEN DEVICES - A method and a system in which a second device provides a service along with an external device via a first device is provided. The method includes, when a service connection to at least one external device has failed, searching for the first device that will relay service data for the external device, transmitting a relay request signal to the first device, and transmitting the service data for the external device to the first device, wherein the transmitted service data is converted by the first device, and wherein the converted service data is provided to the external device. | 06-26-2014 |
Patent application number | Description | Published |
20150028760 | LED LUMINAIRE - A light-emitting diode (LED) luminaire includes a light-emitting part, a rectification unit configured to perform full-wave rectification of an alternating current (AC) voltage to supply a first drive voltage to the light-emitting part, a power factor compensation unit configured to be charged with the first drive voltage during a charge period and supply a second drive voltage to the light-emitting part during a compensation period, and an LED drive controller configured to determine a voltage level of the first drive voltage or the second drive voltage and control sequential driving of the first LED group to the n | 01-29-2015 |
20150084541 | LED DIMMER, LED LIGHTING DEVICE COMPRISING SAME, AND METHOD FOR CONTROLLING DIMMING OF LED LIGHTING DEVICE - A light-emitting diode (LED) dimmer for an LED lighting device, including a power switch, a drive voltage supply, and a LED light-emitting unit. Operating zones of the LED lighting device are changed in accordance with the switching of the power switch, and a dimming level for a next operating zone is determined on the basis of the dimming level and time while the power switch was on during the previous operating period. | 03-26-2015 |
20150245427 | LED DRIVING APPARATUS AND DRIVING METHOD FOR CONTINUOUSLY DRIVING LED - Disclosed herein are a light emitting diode (LED) driving apparatus and driving method for continuously driving an LED. According to the present invention, an LED driving apparatus and driving method for continuously driving an LED capable of compensating for a light output of an LED lighting using an energy chargeable and dischargeable element and/or circuit are proposed. | 08-27-2015 |
20150305098 | LED DRIVING CIRCUIT FOR CONTINUOUSLY DRIVING LED, LED LIGHTING DEVICE COMPRISING SAME AND DRIVING METHOD - An exemplary embodiment discloses a light-emitting diode (LED) driving circuit including an LED driving module configured to provide a first driving voltage to an LED light emitting module including a first LED group to an n-th LED group, n is an integer which is equal to or larger than 2, and sequentially drive the first LED group to the n-th LED group depending on a voltage level of the first driving voltage and a second driving voltage providing module configured to store some of the first driving voltage and selectively provide a second driving voltage to some of the LED groups other than at least the first LED group to an m-th LED group among the LED groups in a V | 10-22-2015 |
Patent application number | Description | Published |
20140252371 | HETEROJUNCTION TRANSISTOR AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention disclose a heterojunction transistor having a normally off characteristic using a gate recess structure and a method of fabricating the same. The heterojunction transistor may include a substrate, a channel layer disposed on the substrate and made of a first nitride-based semiconductor having a first energy bandgap, a first barrier layer disposed on the channel layer and made of a second nitride-based semiconductor having a second energy bandgap different from the first energy bandgap, a gate electrode disposed in a gate control region of the first barrier layer, and a second barrier layer disposed in gate non-control regions of the first barrier layer and separated from the first barrier layer. | 09-11-2014 |
20140362603 | LIGHT SOURCE MODULE AND BACKLIGHT UNIT HAVING THE SAME - Disclosed is a light source module capable of realizing a slim structure and providing excellent luminous efficiency. The light source module includes a circuit board, a light emitting diode chip mounted on the circuit board by flip-chip bonding or surface mount technology (SMT), a wavelength conversion layer disposed on the light emitting diode chip, and a reflector covering an upper surface and at least one of side surfaces of the light emitting diode chip. | 12-11-2014 |
20150060905 | LIGHT SOURCE MODULE AND MANUFACTURING METHOD THEREOF, AND BACKLIGHT UNIT - A light source module includes a circuit board, light emitting diode chips mounted on the circuit board by flip-chip bonding or a surface mounting technology (SMT), and a diffusor covering the circuit board and the light emitting diode chips. | 03-05-2015 |
20150062966 | LIGHT SOURCE MODULE AND BACKLIGHT UNIT HAVING THE SAME - A light source module includes a circuit board, board pads disposed on the circuit board, and a light emitting diode chip disposed on the board pads. The light emitting diode chip includes a substrate and a semiconductor stacking part disposed between the substrate and the circuit board, and the substrate includes an inclined part disposed at an upper portion thereof and a discharging part disposed at one side surface thereof. | 03-05-2015 |
20150069418 | METHOD FOR SEPARATING EPITAXIAL LAYERS AND GROWTH SUBSTRATES, AND SEMICONDUCTOR DEVICE USING SAME - The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness. | 03-12-2015 |
20150069444 | LIGHT EMITTING DIODE - A light emitting diode and a method of fabricating the same, the light emitting diode including a substrate, a semiconductor layer formed on one surface of the substrate, and an anti-reflection element formed on the other surface of the substrate and including a nano-pattern. The anti-reflection element is interposed between the substrate and air. | 03-12-2015 |
20150085527 | LIGHT SOURCE MODULE, FABRICATION METHOD THEREFOR, AND BACKLIGHT UNIT INCLUDING THE SAME - A light source module, a fabrication method therefore, and a slim backlight unit including the same. The light source module includes a light emitting diode (LED) chip electrically connected to a substrate through a lower surface thereof, a wavelength conversion layer formed on the LED chip and enclosing at least the light exit face of the LED chip, and a reflector formed on a region of the LED chip excluding the light exit face. | 03-26-2015 |
20150325689 | III-V TRANSISTOR AND METHOD FOR MANUFACTURING SAME - Disclosed are a group III-V based transistor and a method for manufacturing same. The group III-V based transistor includes a laminated semiconductor structure having an upper surface and a lower surface and including a group III-V based semiconductor layer, and at least one 2DEG region extending from the upper surface of the laminated semiconductor structure to the lower surface thereof. A vertical-type GaN-based transistor using 2DEG can be provided by adopting the 2DEG region. | 11-12-2015 |
20150340581 | LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - A light emitting diode includes: at least one light emitting chip; a substrate including lead frames electrically connected to electrodes of the at least one light emitting chip; a lens disposed on the substrate and enclosing the at least one light emitting chip; and an oil disposed in the lens and the substrate. | 11-26-2015 |