Patent application number | Description | Published |
20120121218 | PHOTONICS CHIP AND OPTICAL APPARATUS INCLUDING THE SAME - Provided are a photonics chip and an optical apparatus including the same. The chip may include a substrate, an optical waveguide, an optical coupler, and a plurality of alignment units. The optical waveguide is formed on the substrate. The optical coupler is formed at the optical waveguide. The alignment units align an optical connector which fixes at least one optical fiber coupled to the optical coupler, on the substrate. | 05-17-2012 |
20120126357 | LIGHT DETECTION DEVICES AND METHODS OF MANUFACTURING THE SAME - Provided are light detection devices and methods of manufacturing the same. The light detection device includes a first conductive pattern on a surface of a substrate, an insulating pattern on the substrate and having an opening exposing at least a portion of the first conductive pattern, a light absorbing layer filling the opening of the insulating pattern and having a top surface disposed at a level substantially higher than a top surface of the insulating pattern, a second conductive pattern on the light absorbing layer, and connecting terminals electrically connected to the first and second conductive patterns, respectively. | 05-24-2012 |
20120148244 | OPTICAL NETWORK STRUCTURES FOR MULTI-CORE CENTRAL PROCESSOR UNIT - Provided is an optical network structure. To configure an optical network structure between hundreds or more of cores in a CPU, intersection between waveguides does not occur, and thus, the optical network structure enables two-way communication between all the cores without an optical switch disposed in an intersection point. The present invention enables a single chip optical network using a silicon photonics optical element, and a CPU chip configured with hundreds or thousands of cores can be developed. | 06-14-2012 |
20120156369 | METHOD OF FORMING OPTICAL COUPLER - Provided are methods of forming an optical coupler. The method includes forming a first waveguide and an in-plane tapered layer on a silicon layer, forming a mask with first and second openings. The first opening is formed between the in-plane tapered layer and the second opening, and the second opening extends from the first opening with a gradually narrowing width. Thereafter, a planar waveguide and a three-dimensional tapered layer are simultaneously formed in the first and second openings, respectively. The planar waveguide has a substantially uniform thickness, and the three-dimensional tapered layer has a thickness gradually increasing with a decrease of the width thereof. | 06-21-2012 |
20120263411 | OPTICAL CONNECTOR AND OPTICAL DEVICE HAVING THE SAME - Provided are an optical connector capable of improving optical alignment efficiency and an optical device having the same. The connector may include a body having a top surface and a bottom surface facing each other, through holes penetrating the body to connect the top and bottom surfaces, and alignment keys provided on at least side surface of the body to be parallel to the through holes. | 10-18-2012 |
20130136396 | GRATING COUPLER - Disclosed is a grating coupler which includes an optical waveguide transferring an optical signal; and a diffraction grating formed on the optical waveguide. The diffraction grating includes protrusions continuously formed and the protrusions have different heights. | 05-30-2013 |
20130149806 | METHODS OF FORMING PHOTO DETECTORS - Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide. | 06-13-2013 |
20130153533 | METHOD FOR TUNING WAVELENGTH OF OPTICAL DEVICE USING REFRACTIVE INDEX QUASI-PHASE CHANGE AND ETCHING - Methods for tuning a wavelength of an optical device are provided. According to the method, a core pattern may be formed on a substrate, a dielectric layer may be formed to cover the core pattern, and the dielectric layer may be thermally treated to increase a refractive index of the dielectric layer. The dielectric layer may include a silicon oxynitride layer. | 06-20-2013 |
20130156057 | SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME - The inventive concept provides semiconductor laser devices and methods of fabricating the same. According to the method, a silicon-crystalline germanium layer for emitting a laser may be formed in a selected region by a selective epitaxial growth (SEG) method. Thus, surface roughness of both ends of a Fabry Perot cavity formed of the silicon-crystalline germanium layer may be reduced or minimized, and a cutting process and a polishing process may be omitted in the method of fabricating the semiconductor laser device. | 06-20-2013 |
20130156369 | RING RESONATORS HAVING Si AND/OR SiN WAVEGUIDES - Provided is a ring resonator including first and second waveguides disposed spaced apart from each other, on a substrate, and at least one channel including at least one ring waveguide arranged in a row between the first and second waveguides. The first and second waveguides and the ring waveguide may be formed of silicon, a width of the ring waveguide may range from 0.7 μm to 1.5 μm, a height of the ring waveguide may range from 150 nm to 300 nm, and a space between the first and second waveguides and the ring waveguide most adjacent thereto may range from 250 nm to 1 mm. | 06-20-2013 |
20130156370 | OPTICAL COUPLING DEVICES AND SILICON PHOTONICS CHIPS HAVING THE SAME - Provided are optical coupling devices and silicon photonics chips having the same. the optical coupling device may include a lower layer having a first region and a second region, a first core layer disposed on the lower layer, the first core layer including first and second waveguides disposed on the first and second regions, respectively, a clad layer covering the first waveguide, and a second core layer interposed between the clad layer and the lower layer to cover the second waveguide. The second waveguide has a width decreasing with increasing distance from the first region and a vertical thickness greater than that of the first waveguide. | 06-20-2013 |
20140048772 | LOW-VOLTAGE HIGH-GAIN HIGH-SPEED GERMANIUM PHOTO DETECTOR AND METHOD OF FABRICATING THE SAME - Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires. | 02-20-2014 |
20140086531 | OPTICAL FILTER HAVING SINGLE REFLECTING TOTAL INTERNAL REFLECTION ECHELLE GRATING FILTER AND OPTICAL WAVEGUIDE DEVICE INCLUDING THE SAME - An optical filter of the inventive concept includes a slab waveguide disposed on a substrate, an input guide gate and an output guide gate spaced apart from each other in the slab waveguide, and an echelle grating filter disposed in the slab waveguide. The echelle grating filter has curvature and extends in a first direction. The echelle grating filter has gratings of sawtooth shape on one surface thereof. Light inputted through the input guide gate is totally reflected at the echelle grating filter by one reflecting process. | 03-27-2014 |
20140105235 | SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING THE SAME - Provided are a semiconductor laser and a method of manufacturing the same. The method includes: providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate. | 04-17-2014 |
20140169389 | OPTICAL RECEIVER MODULE USING WAVELENGTH DIVISION MULTIPLEXING TYPE - An optical receiver module includes a demultiplexer, an optical device including a right-angled mirror reflecting individual optical signals transmitted from the demultiplexer and a plurality of lenses receiving the reflected optical signals, and a plurality of photodetectors spaced apart from the plurality of lenses by a predetermined distance. The plurality of photodetectors converts the individual optical signals into electrical signals. The optical device and the demultiplexer are formed into a united structure. A distance between the lenses is equal to a distance between the photodetectors. | 06-19-2014 |
20140169729 | WAVEGUIDE WITH REDUCED PHASE ERROR AND PHOTONICS DEVICE INCLUDING THE SAME - Provided are a waveguide with a reduced phase error and a photonics device including the same. The waveguide structure may include a lower clad, a core pattern with at least one bending region, on the lower clad, a beam deflecting pattern on the core pattern, and an upper clad covering the core pattern provided with the beam deflecting pattern. The beam deflecting pattern may be formed of a material, whose refractive index may be higher than that of the upper clad and may be lower than or equivalent to that of the core pattern, and the beam deflecting pattern has an increasing and decreasing width or an oscillating width, when measured along the bending region. | 06-19-2014 |
20140178069 | OPTICAL RECEIVER MODULE - An optical receiver module may include a demultiplexer routing a plurality of multiplexed optical signals to different optical paths depending on their wavelengths, a photodetector provided spaced apart from the demultiplexer to convert the optical signals into electric signals, respectively, a pre-amplifier electrically connected to the photodetector to amplify intensities of the electric signals, a flexible printed circuit board including a first electrode layer, which is electrically connected to the pre-amplifier to transmit the electric signals to the external circuit, and a second electrode layer configured to supply a ground potential. The flexible printed circuit board are provided not to have any via hole between the first and second electrode layers. | 06-26-2014 |
20140241662 | OPTICAL DEVICE MODULE AND OPTICAL COMMUNICATION NETWORK SYSTEM USING THE SAME - An optical device module includes a substrate, an interlayer insulating layer on the substrate, an optical waveguide on the interlayer insulating layer, an optical device on the optical waveguide, and a prism disposed between the optical device and the optical waveguide. The prism has a refractive index greater than a refractive index of the optical waveguide. | 08-28-2014 |
20140346532 | OPTICAL INPUT/OUTPUT DEVICE, OPTICAL ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method. | 11-27-2014 |
20140348194 | VCSEL AND MANUFACTURING METHOD OF THE SAME - Provided is a vertical-cavity surface-emitting laser (VCSEL). The VCSEL includes a silicon substrate, a lower reflective layer disposed on the silicon substrate, a light generation laser disposed on the lower reflective layer, and an upper reflective layer disposed on the light generation layer. The lower reflective layer, the light generation layer, and the upper reflective layer may include a III-V semiconductor light source-active layer monolithically integrated on a first impurity layer by wafer bonding. | 11-27-2014 |
20150030282 | OPTICAL DEVICE AND MANUFACTURING METHOD THEREOF - Provided is an optical device including a first optical waveguide on one side of a substrate; a laser separated from the first optical waveguide and disposed on the other side of the substrate; and a first coupled waveguide between the laser and the first optical waveguide. The laser may be monolithically integrated on the substrate. | 01-29-2015 |
20150078708 | OPTICAL COUPLER HAVING SELF-FOCUSING REGION AND ARRYED-WAVEGUIDE GRATING STRUCTURE INCLUDING THE SAME - Provided are an optical coupler and an arrayed-waveguide grating structure including the same. The coupler includes a lower clad layer, a core comprising a slab waveguide region disposed on one side of the lower clad layer and a ridge waveguide region disposed on the other side of the lower clad layer, and an upper clad disposed on the core, wherein the ridge waveguide region comprises a self-focusing region configured to focus an optical signal provided form the slab waveguide region and thus to prevent scattering of the optical signal. | 03-19-2015 |